Ion implantation apparatus
    31.
    发明授权
    Ion implantation apparatus 有权
    离子注入装置

    公开(公告)号:US07791049B2

    公开(公告)日:2010-09-07

    申请号:US12100973

    申请日:2008-04-10

    IPC分类号: H01J37/317 G21K5/04

    摘要: A beam line before incidence on a beam scanner is arranged with an injector flag Faraday cup that detects a beam current by measuring a total beam amount of an ion beam to be able to be brought in and out thereto and therefrom. When the ion beam is shut off by placing the injector flag Faraday cup on a beam trajectory line, the ion beam impinges on graphite provided at the injector flag Faraday cup. At this occasion, even when the graphite is sputtered by the ion beam, since the injector flag Faraday cup is arranged on an upstream side of the beam scanner and the ion beam is shut off by the injector flag Faraday cup, particles of the sputtered graphite do not adhere to a peripheral member of the injector flag Faraday cup.

    摘要翻译: 在光束扫描仪入射之前的光束线布置有喷射器标记法拉第杯,其通过测量离子束的总光束量来检测束流,从而能够将其输入和输出。 当通过将注射器标记法拉第杯放置在梁轨迹线上来关闭离子束时,离子束撞击在注射器标记法拉第杯处提供的石墨上。 在这种情况下,即使当石墨被离子束溅射时,由于注射器标志法拉第杯布置在射束扫描器的上游侧,并且离子束被注射器标记法拉第杯切断,溅射的石墨颗粒 不要附着在注射器标志法拉第杯的周边部件上。

    Beam processing system and beam processing method
    32.
    发明授权
    Beam processing system and beam processing method 有权
    光束处理系统和光束处理方法

    公开(公告)号:US07718980B2

    公开(公告)日:2010-05-18

    申请号:US11806128

    申请日:2007-05-30

    IPC分类号: H01J37/30

    摘要: A beam processing system is for causing a particle beam extracted from a beam generating source to pass through a mass analysis magnet device, a mass analysis slit, and a deflection scanner in the order named, thereby irradiating the particle beam onto a processing object. The mass analysis slit is installed between the mass analysis magnet device and the deflection scanner at a position where the particle beam having passed through the mass analysis magnet device converges most in a lateral direction. A first DC quadrupole electromagnet and a second DC quadrupole electromagnet are installed on an upstream side and a downstream side of the mass analysis slit, respectively.

    摘要翻译: 光束处理系统用于使从束发生源提取的粒子束按照所述顺序通过质量分析磁体装置,质量分析狭缝和偏转扫描器,从而将粒子束照射到处理对象上。 在通过质量分析用磁体装置的粒子束在横向收敛最多的位置处,将质量分析用狭缝安装在质量分析磁体装置与偏转扫描仪之间。 第一直流四极电磁体和第二直流四极电磁体分别安装在质量分析狭缝的上游侧和下游侧。

    Ion Implantation Apparatus and Method of Converging/Shaping Ion Beam Used Therefor
    33.
    发明申请
    Ion Implantation Apparatus and Method of Converging/Shaping Ion Beam Used Therefor 失效
    离子注入装置及其所用的离子束聚合/成形方法

    公开(公告)号:US20080251734A1

    公开(公告)日:2008-10-16

    申请号:US12100861

    申请日:2008-04-10

    IPC分类号: G21K1/08

    摘要: An ion implantation apparatus reciprocally scans an ion beam extracted from an ion source and passed through a mass analysis magnet apparatus and a mass analysis slit and irradiates to a wafer. The ion beam is converged and shaped by providing a first quadrupole vertical focusing electromagnet at a section of a beam line from an outlet of the mass analysis magnet apparatus before incidence of the mass analysis slit and providing a second quadrupole vertical focusing electromagnet having an effective magnetic field effect larger than that of the first quadrupole focusing electromagnet at a section of the beam line from an outlet of the mass analysis slit before incidence on the beam scanner.

    摘要翻译: 离子注入装置相互扫描从离子源提取的离子束并通过质量分析磁体装置和质量分析狭缝并照射到晶片。 通过在质量分析用狭缝入射之前从质量分析磁体装置的出口在梁线的一部分处设置第一四极杆垂直聚焦电磁体并提供具有有效磁性的第二四极杆垂直聚焦电磁体,离子束会聚并成形 在光束扫描器上入射之前,在质量分析狭缝的出口处的光束线的一部分处的第一四极聚焦电磁体的场效应大于第一四极聚焦电磁体。

    Beam processing system and beam processing method
    35.
    发明申请
    Beam processing system and beam processing method 有权
    光束处理系统和光束处理方法

    公开(公告)号:US20080067397A1

    公开(公告)日:2008-03-20

    申请号:US11806128

    申请日:2007-05-30

    IPC分类号: H01J1/50

    摘要: A beam processing system is for causing a particle beam extracted from a beam generating source to pass through a mass analysis magnet device, a mass analysis slit, and a deflection scanner in the order named, thereby irradiating the particle beam onto a processing object. The mass analysis slit is installed between the mass analysis magnet device and the deflection scanner at a position where the particle beam having passed through the mass analysis magnet device converges most in a lateral direction. A first DC quadrupole electromagnet and a second DC quadrupole electromagnet are installed on an upstream side and a downstream side of the mass analysis slit, respectively,

    摘要翻译: 光束处理系统用于使得从光束发生源提取的粒子束以所述顺序通过质量分析磁体装置,质量分析狭缝和偏转扫描器,从而将粒子束照射到处理对象上。 在通过质量分析用磁体装置的粒子束在横向收敛最多的位置处,将质量分析用狭缝安装在质量分析磁体装置与偏转扫描仪之间。 分别在质量分析狭缝的上游侧和下游侧安装第一直流四极电磁体和第二直流四极电磁体,