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31.发明授权Narrow gap cladding field enhancement for low power programming of a MRAM device 失效用于MRAM器件的低功耗编程的窄间隙包层场增强公开(公告)号：US06559511B1
公开(公告)日：2003-05-06
申请号：US10010574
申请日：2001-11-13
申请人： Nicholas D. Rizzo
发明人： Nicholas D. Rizzo
IPC分类号： H01L2982
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08
摘要： A conductive line for programming a magnetoresistive memory device which includes a metal interconnect region positioned proximate to a magnetoresistive random access memory device, wherein the metal interconnect region supplies a current which produces a magnetic field and wherein the metal interconnect region includes a metal layer with a length and a width and has a first side, a second side, a third side, and a fourth side wherein a ferromagnetic cladding region with a thickness is positioned on the first side, the second side, the third side, and the fourth side of the metal layer, and wherein the ferromagnetic cladding region positioned on the first side has a trench having a length less than the length of the metal layer and a width approximately equal to the thickness of the ferromagnetic of the magnetic cladding region. The length of the trench can be changed to adjust the magnitude of the magnetic field.
摘要翻译： 一种用于编程磁阻存储器件的导线，包括靠近磁阻随机存取存储器件的金属互连区域，其中金属互连区域提供产生磁场的电流，并且其中金属互连区域包括具有 具有第一面，第二面，第三面和第四面，其中厚度的铁磁性包层区域位于第一面，第二面，第三面和第四面的第一面，第二面，第三面和第四面 所述金属层，并且其中位于所述第一侧上的所述铁磁性包层区域具有长度小于所述金属层的长度的沟槽和大致等于所述磁性包覆区域的铁磁体的厚度的宽度。 可以改变沟槽的长度以调整磁场的大小。
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公开(公告)号：US10720572B1
公开(公告)日：2020-07-21
申请号：US16273777
申请日：2019-02-12
摘要： A memory device includes a memory stack formed on a substrate to program skyrmions within at least one layer of the stack. The skyrmions represent logic states of the memory device. The memory stack further includes a top and bottom electrode to receive electrical current from an external source and to provide the electrical current to the memory stack. A free layer stores a logic state of the skyrmions in response to the electrical current. A Dzyaloshinskii-Moriya (DM) Interaction (DMI) layer in contact with the free layer induces skyrmions in the free layer. A tunnel barrier is interactive with the DMI layer to facilitate detection of the logic state of the skyrmions in response to a read current. At least one fixed magnetic (FM) layer is positioned within the memory stack to facilitate programming of the skyrmions within the free layer in response to the electrical current.
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公开(公告)号：US07635903B2
公开(公告)日：2009-12-22
申请号：US11225973
申请日：2005-09-13
IPC分类号： H01L29/00
CPC分类号： H01L43/08 , H03B15/006
摘要： An oscillator includes at least one of: (i) a parallel array of resistors (420, 421, 422, 701, 801, 901, 902) or magnetoresistive contacts to a magnetoresistive film (120, 320); and (ii) a series array of resistors (620, 621, 702, 902) or magnetoresistive contacts to individualized areas of at least one magnetoresistive film.
摘要翻译： 振荡器包括以下至少一个：（i）电阻器（420,421,422,701,801,901,902）的并联阵列或磁阻膜（120,320）的磁阻触点; 和（ii）至少一个磁阻膜的个体化区域的一系列电阻器（620,621,702,902）或磁阻触点。
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公开(公告)号：US07605437B2
公开(公告)日：2009-10-20
申请号：US11736960
申请日：2007-04-18
IPC分类号： H01L29/82
摘要： A spin-transfer MRAM bit includes a free magnet layer positioned between a pair of spin polarizers, wherein at least one of the spin polarizers comprises an unpinned synthetic antiferromagnet (SAF). The SAF may include two antiparallel fixed magnet layers separated by a coupling layer. To improve manufacturability, the layers of the SAF may be non-symmetrical (e.g., having different thicknesses or different inherent anisotropies) to assist in achieving proper alignment during anneal. The total magnetic moment of the SAF may be greater than that of the free magnet layer.
摘要翻译： 自旋转移MRAM位包括位于一对自旋偏振器之间的自由磁体层，其中至少一个自旋偏振器包括未固化的合成反铁磁体（SAF）。 SAF可以包括由耦合层分开的两个反平行固定磁体层。 为了提高可制造性，SAF的层可以是非对称的（例如，具有不同的厚度或不同的固有各向异性），以有助于在退火期间实现适当的对准。 SAF的总磁矩可能大于自由磁体层的总磁矩。
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公开(公告)号：US07432150B2
公开(公告)日：2008-10-07
申请号：US11351610
申请日：2006-02-10
IPC分类号： H01L21/8234 , H01L21/8244
CPC分类号： H01L43/12
摘要： A method of manufacturing a magnetoelectronic device includes providing an electrically conducting material and an electrically insulating material adjacent to at least a portion of the electrically conducting material, and implanting a magnetic material into the electrically insulating material. The magnetic material increases the magnetic permeability of the electrically insulating material. The implant may be a blanket or a targeted implant.
摘要翻译： 制造磁电子器件的方法包括提供导电材料和与导电材料的至少一部分相邻的电绝缘材料，以及将磁性材料注入到电绝缘材料中。 磁性材料增加了电绝缘材料的磁导率。 植入物可以是毯子或靶向植入物。
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公开(公告)号：US07149106B2
公开(公告)日：2006-12-12
申请号：US10971741
申请日：2004-10-22
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A magnetic random access memory (“MRAM”) device can be selectively written using spin-transfer reflection mode techniques. Selectivity of a designated MRAM cell within an MRAM array is achieved by the dependence of the spin-transfer switching current on the relative angle between the magnetizations of the polarizer element and the free magnetic element in the MRAM cell. The polarizer element has a variable magnetization that can be altered in response to the application of a current, e.g., a digit line current. When the magnetization of the polarizer element is in the natural default orientation, the data in the MRAM cell is preserved. When the magnetization of the polarizer element is switched, the data in the MRAM cell can be written in response to the application of a relatively low write current.
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公开(公告)号：US06956763B2
公开(公告)日：2005-10-18
申请号：US10609288
申请日：2003-06-27
IPC分类号： G11C11/155 , G11C11/00
CPC分类号： G11C11/155
摘要： A direct write is provided for a magnetoelectronics information device that includes producing a first magnetic field with a first field magnitude in proximity to the magnetoelectronics information device at a first time (t1). Once this first magnetic field with the first magnitude is produced, a second magnetic field with a second field magnitude is produced in proximity to the magnetoelectronics information device at a second time (t2). The first magnetic field is adjusted to provide a third magnitude at a third time (t3) that is less than the first field magnitude and greater than zero, and the second magnetic field is adjusted to provide a fourth field magnitude at a fourth time (t4) that is less than the second field magnitude. This direct write is used in conjunction with other direct writes and also in combination with toggle writes to write the MRAM element without an initial read.
摘要翻译： 提供了一种用于磁电子信息设备的直接写入，其包括在第一时间（t 1> 1）处产生具有接近磁电子信息器件的第一场强的第一磁场。 一旦产生具有第一幅度的第一磁场，则在第二时间（t 2> 2）处产生具有第二磁场强度的第二磁场，靠近磁电子信息装置。 第一磁场被调整以在小于第一场幅度并大于零的第三时间（t 3/3）处提供第三幅度，并且调整第二磁场以提供第四磁场 小于第二场强的第四时间（t> 4 ）的场强。 这种直接写入与其他直接写入一起使用，并且与切换写入组合使用以写入MRAM元素而不进行初始读取。
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公开(公告)号：US06818961B1
公开(公告)日：2004-11-16
申请号：US10611789
申请日：2003-06-30
IPC分类号： H01L2982
CPC分类号： H01F10/3254 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3272 , H01F41/18 , H01F41/303 , H01L43/12
摘要： A method of fabricating a magnetoresistive tunneling junction cell comprising the steps of providing a substrate with a surface, depositing a first magnetic region (17) having a resultant magnetic moment vector onto the substrate, depositing an electrically insulating material (16) onto the first magnetic region, and depositing a second magnetic region (15) onto the electrically insulating material, wherein at least a portion of one of the first and second magnetic regions is formed by depositing said region at a nonzero deposition angle relative to a direction perpendicular to the surface of the substrate to create an induced anisotropy.
摘要翻译： 一种制造磁阻隧道结电池的方法，包括以下步骤：向衬底提供表面;将具有合成磁矩矢量的第一磁区（17）沉积到衬底上，将电绝缘材料（16）沉积到第一磁 并且将第二磁性区域（15）沉积到所述电绝缘材料上，其中所述第一和第二磁性区域中的一个的至少一部分相对于垂直于所述表面的方向以非零沉积角沉积所述区域而形成 的基底以产生诱导各向异性。
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39.发明授权Magnetoelectronics element having a magnetic layer formed of multiple sub-element layers 失效具有由多个子元件层形成的磁性层的磁电元件公开(公告)号：US06579625B1
公开(公告)日：2003-06-17
申请号：US09695467
申请日：2000-10-24
IPC分类号： G11B5127
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G11C11/16 , H01F10/32 , H01L27/222 , H01L43/08 , Y10T428/1171 , Y10T428/12465 , Y10T428/12639 , Y10T428/24942 , Y10T428/31
摘要： A magnetic layer (46) of a magnetoelectronics element (40) is provided that has a first sub-element layer (48) and a second sub-element layer (50). The first sub-element layer (48) is configured to have a first area and the second sub-element layer (50) is configured to have a second area that is less than the first area.
摘要翻译： 提供了具有第一子元件层（48）和第二子元件层（50）的磁电元件（40）的磁性层（46）。 第一子元件层（48）被配置为具有第一区域，并且第二子元件层（50）被配置为具有小于第一区域的第二区域。
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40.发明授权公开(公告)号：US06545906B1
公开(公告)日：2003-04-08
申请号：US09978859
申请日：2001-10-16
申请人： Leonid Savtchenko , Bradley N. Engel , Nicholas D. Rizzo , Mark F. Deherrera , Jason Allen Janesky
发明人： Leonid Savtchenko , Bradley N. Engel , Nicholas D. Rizzo , Mark F. Deherrera , Jason Allen Janesky
IPC分类号： G11C1100
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1675
摘要： A method to switch a scalable magnetoresistive memory cell including the steps of providing a magnetoresistive memory device sandwiched between a word line and a digit line so that current waveforms can be applied to the word and digit lines at various times to cause a magnetic field flux to rotate the effective magnetic moment vector of the device by approximately 180°. The magnetoresistive memory device includes N ferromagnetic layers that are anti-ferromagnetically coupled. N can be adjusted to change the magnetic switching volume of the device.
摘要翻译： 一种用于切换可扩展磁阻存储单元的方法，包括以下步骤：提供夹在字线和数字线之间的磁阻存储器件，使得可以在不同时间将电流波形施加到字和数字线，以使磁场通量 将器件的有效磁矩矢量旋转大约180°。 磁阻存储器件包括反铁磁耦合的N个铁磁层。 可以调节N以改变设备的磁性开关量。
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