摘要:
A magnetic field sensor comprises: a magnetic field detecting element that detects magnitude of an external magnetic field based on electric resistance of the magnetic field detecting element to sense current, the electric resistance being varied in accordance with the external magnetic field; an upper shield layer that is formed to cover the magnetic field detecting element; and a protective layer that is formed above the upper shield layer with respect to a direction of stacking. The upper shield layer includes a first portion at least part of which covers a top surface of the magnetic field detecting element, and a second portion that covers the first portion, and, the first portion has a larger absolute value of magnetostriction than the second portion.
摘要:
A magnetic field sensor comprises: a magnetic field detecting element that detects magnitude of an external magnetic field based on electric resistance of the magnetic field detecting element to sense current, the electric resistance being varied in accordance with the external magnetic field; an upper shield layer that is formed to cover the magnetic field detecting element; and a protective layer that is formed above the upper shield layer with respect to a direction of stacking. The upper shield layer includes a first portion at least part of which covers a top surface of the magnetic field detecting element, and a second portion that covers the first portion, and, the first portion has a larger absolute value of magnetostriction than the second portion.
摘要:
A magneto-resistive element includes a lower magnetic shield film and a magneto-resistive film disposed above the lower magnetic shield film. The lower magnetic shield film includes a lower shield layer and an upper shield layer. The upper shield layer is amorphous or microcrystalline, made of a NiFe or CoFe composition containing B or P, and deposited on the lower shield layer. The lower shield layer is a magnetic conductive layer which is amorphous or microcrystalline with a crystal grain size equal to or less than 20 nm.
摘要:
A magneto-resistive element includes a lower magnetic shield film and a magneto-resistive film disposed above the lower magnetic shield film. The lower magnetic shield film includes a lower shield layer and an upper shield layer. The upper shield layer is amorphous or microcrystalline, made of a NiFe or CoFe composition containing B or P, and deposited on the lower shield layer. The lower shield layer is a magnetic conductive layer which is amorphous or microcrystalline with a crystal grain size equal to or less than 20 nm.
摘要:
A microwave assisted magnetic head includes a main magnetic pole; a trailing shield, a main coil for causing the main magnetic pole to generate a perpendicular recording field, at least one secondary coil for generating an in-plane alternate-current (AC) magnetic field with a frequency in a microwave band from a magnetic recording gap between the main magnetic pole and the trailing shield, nonmagnetic films formed on magnetic recording gap facing surfaces that are defined by the main magnetic pole and the trailing shield, the main magnetic pole and the trailing shield being configured with first soft magnetic films, and second soft magnetic films formed further on the surfaces of the nonmagnetic films. The second soft magnetic films have larger anisotropy fields than the first soft magnetic films have.
摘要:
This magnetic recording device is provided with a magnetic write head having a magnetic pole, and a magnetic recording medium having a plurality of data recording blocks. Each of the data recording blocks is formed with a plurality of write tracks, and separated, in a write track width direction, from neighboring one of the data recording blocks with a writing exudation suppression section in between. With this configuration, a magnetic mutual interference of the adjacent data recording blocks at the time of a data rewriting process is avoided even when a mutual interval of the data recording blocks is narrowed, and a good recording state is maintained in each of the data recording blocks. Therefore, it is possible to achieve an improvement in a recording density, while realizing the good and brief data rewriting process for each of the data recording blocks.
摘要:
A thermally-assisted magnetic recording head includes a main pole, a waveguide, and a plasmon generator. The main pole has a front end face including first and second ends that are opposite in a track width direction. An arbitrary cross section of the main pole that passes through an arbitrary point on the front end face and is perpendicular to a medium facing surface and to the track width direction has a length in a direction perpendicular to the medium facing surface. When the arbitrary point on the front end face is located at a center of the front end face in the track width direction, the length of the arbitrary cross section is smaller than that when the arbitrary point is located at the first end and that when the arbitrary point is located at the second end.
摘要:
A magnetic memory element includes a pair of electrodes, a junction layer, at least one carbon nanotube, and at least one nanowire. The at least one nanowire is made of a ferromagnetic material and extends through a hole of each the at least one carbon nanotube with both ends being electrically connected to the pair of electrodes, respectively. The junction layer is made of a non-magnetic material and disposed between one of the pair of electrodes and one end of each the at least one nanowire. The one of the pair of electrodes is made of a ferromagnetic material. Magnetization of the at least one nanowire is reversed by spin injection performed through the junction layer with the one of the pair of electrodes. When a DC bias current and a detection current having a frequency coinciding with a magnetic resonance frequency of the nanowire are applied in a superimposed manner, between the electrodes, within a range not reaching a critical current density of the magnetization reversal, the pair of electrodes have a voltage corresponding to a magnetization direction of the nanowire.
摘要:
An MR element incorporates a layered structure. The layered structure includes: a spacer layer having a first surface and a second surface that face toward opposite directions; a free layer disposed adjacent to the first surface of the spacer layer and having a direction of magnetization that changes in response to a signal magnetic field; and a pinned layer disposed adjacent to the second surface of the spacer layer and having a fixed direction of magnetization. The spacer layer is a layer at least part of which is made of a material other than a conductor, and the spacer layer intercepts the passage of currents or limits the passage of currents as compared with a layer entirely made of a conductor. The MR element further incorporates a conductive film that is disposed on the peripheral surface of the layered structure and allows conduction between the free layer and the pinned layer.
摘要:
The present invention relates to a rubber composition comprising 100 parts by mass of a solid diene-based rubber (1), 5 to 150 parts by mass of silica (2), 0.1 to 50 parts by mass of a liquid diene-based rubber (3) which is modified with an unsaturated carboxylic acid and/or derivative thereof and has a number average molecular weight of 5000 to 100000, and further 0,1 to 50 parts by mass of an unmodified liquid diene-based rubber (4) having a number average molecular weight of 5000 to 100000 with respect to 100 parts by mass of the solid diene-based rubber (1) and/or 1.5 to 14.0 parts by mass of water (5) with respect to 100 parts by mass of silica (2), and a crosslinked product obtained by crosslinking the rubber composition.A rubber composition obtained by the present invention is improved in processability when silica is added and mixed with a diene-based rubber and is excellent in dynamic properties after crosslinking.