公开(公告)号：US20120320474A1

公开(公告)日：2012-12-20

申请号：US13527735

申请日：2012-06-20

申请人： Yoshikazu Soeno ,  Kei Hirata ,  Tsutomu Aoyama ,  Isamu Sato

发明人： Yoshikazu Soeno ,  Kei Hirata ,  Tsutomu Aoyama ,  Isamu Sato

IPC分类号： G11B5/39 ,  G11B5/17

CPC分类号： G11B5/314 ,  G11B5/3967 ,  G11B2005/0024

摘要： A microwave assisted magnetic head includes a main magnetic pole; a trailing shield, a main coil for causing the main magnetic pole to generate a perpendicular recording field, at least one secondary coil for generating an in-plane alternate-current (AC) magnetic field with a frequency in a microwave band from a magnetic recording gap between the main magnetic pole and the trailing shield, nonmagnetic films formed on magnetic recording gap facing surfaces that are defined by the main magnetic pole and the trailing shield, the main magnetic pole and the trailing shield being configured with first soil magnetic films, and second soft magnetic films formed further on the surfaces of the nonmagnetic films. The second soft magnetic films have larger anisotropy fields than the first soft magnetic films have.

摘要翻译： 微波辅助磁头包括主磁极; 后屏蔽，用于使主磁极产生垂直记录场的主线圈，至少一个次级线圈，用于产生来自磁记录的微波频带中的频率的平面内交流（AC）磁场 主磁极和后屏蔽之间的间隙，由主磁极和后屏蔽限定的磁记录间隙面对表面上形成的非磁性膜，主磁极和后屏蔽构成第一土壤磁膜，以及 第二软磁膜进一步形成在非磁性膜的表面上。 第二软磁膜具有比第一软磁膜具有更大的各向异性场。

公开(公告)号：US08582239B2

公开(公告)日：2013-11-12

申请号：US13527735

申请日：2012-06-20

申请人： Yoshikazu Soeno ,  Kei Hirata ,  Tsutomu Aoyama ,  Isamu Sato

发明人： Yoshikazu Soeno ,  Kei Hirata ,  Tsutomu Aoyama ,  Isamu Sato

IPC分类号： G11B5/31 ,  G11B5/02

CPC分类号： G11B5/314 ,  G11B5/3967 ,  G11B2005/0024

摘要： A microwave assisted magnetic head includes a main magnetic pole; a trailing shield, a main coil for causing the main magnetic pole to generate a perpendicular recording field, at least one secondary coil for generating an in-plane alternate-current (AC) magnetic field with a frequency in a microwave band from a magnetic recording gap between the main magnetic pole and the trailing shield, nonmagnetic films formed on magnetic recording gap facing surfaces that are defined by the main magnetic pole and the trailing shield, the main magnetic pole and the trailing shield being configured with first soft magnetic films, and second soft magnetic films formed further on the surfaces of the nonmagnetic films. The second soft magnetic films have larger anisotropy fields than the first soft magnetic films have.

摘要翻译： 微波辅助磁头包括主磁极; 后屏蔽，用于使主磁极产生垂直记录场的主线圈，至少一个次级线圈，用于产生来自磁记录的微波频带中的频率的平面内交流（AC）磁场 主磁极和后屏蔽之间的间隙，由主磁极和后屏蔽限定的磁记录间隙面对表面上形成的非磁性膜，主磁极和后屏蔽构成第一软磁膜，以及 第二软磁膜进一步形成在非磁性膜的表面上。 第二软磁膜具有比第一软磁膜具有更大的各向异性场。

公开(公告)号：US08559123B2

公开(公告)日：2013-10-15

申请号：US12801540

申请日：2010-06-14

申请人： Kei Hirata ,  Norikazu Ota ,  Noboru Yamanaka

发明人： Kei Hirata ,  Norikazu Ota ,  Noboru Yamanaka

IPC分类号： G11B5/09

CPC分类号： G11B5/1278 ,  B82Y10/00 ,  G11B5/743

摘要： This magnetic recording device is provided with a magnetic write head having a magnetic pole, and a magnetic recording medium having a plurality of data recording blocks. Each of the data recording blocks is formed with a plurality of write tracks, and separated, in a write track width direction, from neighboring one of the data recording blocks with a writing exudation suppression section in between. With this configuration, a magnetic mutual interference of the adjacent data recording blocks at the time of a data rewriting process is avoided even when a mutual interval of the data recording blocks is narrowed, and a good recording state is maintained in each of the data recording blocks. Therefore, it is possible to achieve an improvement in a recording density, while realizing the good and brief data rewriting process for each of the data recording blocks.

摘要翻译： 该磁记录装置设置有具有磁极的磁写头和具有多个数据记录块的磁记录介质。 每个数据记录块形成有多个写入磁道，并且在写入磁道宽度方向上与相邻的一个数据记录块之间具有写入渗出抑制部分。 利用这种配置，即使当数据记录块的相互间隔变窄时也避免了在数据重写处理时相邻的数据记录块的磁互相干扰，并且在每个数据记录中保持良好的记录状态 块。 因此，可以实现对每个数据记录块的良好且简短的数据重写处理的记录密度的提高。

公开(公告)号：US08254215B1

公开(公告)日：2012-08-28

申请号：US13282943

申请日：2011-10-27

申请人： Kosuke Tanaka ,  Susumu Aoki ,  Kei Hirata ,  Makoto Isogai

发明人： Kosuke Tanaka ,  Susumu Aoki ,  Kei Hirata ,  Makoto Isogai

IPC分类号： G11B11/00

CPC分类号： G11B5/3116 ,  G11B5/314 ,  G11B5/3163 ,  G11B5/6088 ,  G11B2005/0021

摘要： A thermally-assisted magnetic recording head includes a main pole, a waveguide, and a plasmon generator. The main pole has a front end face including first and second ends that are opposite in a track width direction. An arbitrary cross section of the main pole that passes through an arbitrary point on the front end face and is perpendicular to a medium facing surface and to the track width direction has a length in a direction perpendicular to the medium facing surface. When the arbitrary point on the front end face is located at a center of the front end face in the track width direction, the length of the arbitrary cross section is smaller than that when the arbitrary point is located at the first end and that when the arbitrary point is located at the second end.

摘要翻译： 热辅助磁记录头包括主极，波导和等离子体发生器。 主极具有包括在轨道宽度方向上相对的第一端和第二端的前端面。 主极的任意横截面，其通过前端面上的任意点并且垂直于介质相对表面和轨道宽度方向，具有与面向介质的表面垂直的方向的长度。 当前端面上的任意点位于轨道宽度方向上的前端面的中心时，任意横截面的长度小于任意点位于第一端的长度，而当 任意点位于第二端。

公开(公告)号：US08164946B2

公开(公告)日：2012-04-24

申请号：US12839947

申请日：2010-07-20

申请人： Kei Hirata

发明人： Kei Hirata

IPC分类号： G11C11/00

CPC分类号： H01F1/0081 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/025 ,  H01F10/3254 ,  H01F10/329 ,  Y10S977/933

摘要： A magnetic memory element includes a pair of electrodes, a junction layer, at least one carbon nanotube, and at least one nanowire. The at least one nanowire is made of a ferromagnetic material and extends through a hole of each the at least one carbon nanotube with both ends being electrically connected to the pair of electrodes, respectively. The junction layer is made of a non-magnetic material and disposed between one of the pair of electrodes and one end of each the at least one nanowire. The one of the pair of electrodes is made of a ferromagnetic material. Magnetization of the at least one nanowire is reversed by spin injection performed through the junction layer with the one of the pair of electrodes. When a DC bias current and a detection current having a frequency coinciding with a magnetic resonance frequency of the nanowire are applied in a superimposed manner, between the electrodes, within a range not reaching a critical current density of the magnetization reversal, the pair of electrodes have a voltage corresponding to a magnetization direction of the nanowire.

摘要翻译： 磁记忆元件包括一对电极，接合层，至少一个碳纳米管和至少一个纳米线。 所述至少一个纳米线由铁磁材料制成并且延伸穿过每个所述至少一个碳纳米管的孔，其两端分别电连接到所述一对电极。 接合层由非磁性材料制成并且设置在一对电极中的一个和每个至少一个纳米线的一端之间。 一对电极中的一个由铁磁材料制成。 至少一个纳米线的磁化通过与该对电极之一的结层进行的自旋注入反转。 当直流偏置电流和具有与纳米线的磁共振频率一致的频率的检测电流以叠加方式施加在电极之间时，在不达到磁化反转的临界电流密度的范围内，该对电极 具有与纳米线的磁化方向对应的电压。

公开(公告)号：US07876537B2

公开(公告)日：2011-01-25

申请号：US11790396

申请日：2007-04-25

申请人： Takumi Uesugi ,  Tetsuro Sasaki ,  Takeo Kagami ,  Kei Hirata

发明人： Takumi Uesugi ,  Tetsuro Sasaki ,  Takeo Kagami ,  Kei Hirata

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3983 ,  H01L27/222 ,  H01L43/08

摘要： An MR element incorporates a layered structure. The layered structure includes: a spacer layer having a first surface and a second surface that face toward opposite directions; a free layer disposed adjacent to the first surface of the spacer layer and having a direction of magnetization that changes in response to a signal magnetic field; and a pinned layer disposed adjacent to the second surface of the spacer layer and having a fixed direction of magnetization. The spacer layer is a layer at least part of which is made of a material other than a conductor, and the spacer layer intercepts the passage of currents or limits the passage of currents as compared with a layer entirely made of a conductor. The MR element further incorporates a conductive film that is disposed on the peripheral surface of the layered structure and allows conduction between the free layer and the pinned layer.

摘要翻译： MR元件结合了分层结构。 层状结构包括：具有朝向相反方向的第一表面和第二表面的间隔层; 邻近所述间隔层的第一表面设置并具有响应于信号磁场而变化的磁化方向的自由层; 以及与所述间隔层的第二表面相邻并且具有固定的磁化方向的被钉扎层。 间隔层是其至少一部分由导体以外的材料制成的层，并且与完全由导体制成的层相比，间隔层拦截电流的流动或限制电流的流动。 MR元件还包括设置在层状结构的外围表面上的导电膜，并允许自由层和钉扎层之间的导电。

公开(公告)号：US07782575B2

公开(公告)日：2010-08-24

申请号：US11698180

申请日：2007-01-26

申请人： Yoshihiro Tsuchiya ,  Kei Hirata ,  Tomohito Mizuno ,  Koji Shimazawa

发明人： Yoshihiro Tsuchiya ,  Kei Hirata ,  Tomohito Mizuno ,  Koji Shimazawa

IPC分类号： G11B5/39

CPC分类号： G11B5/59683 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996

摘要： An MR element includes: a free layer having a direction of magnetization that changes in response to a signal magnetic field; a pinned layer having a fixed direction of magnetization; and a spacer layer disposed between these layers. The spacer layer includes a first nonmagnetic metal layer and a second nonmagnetic metal layer each made of a nonmagnetic metal material, and a semiconductor layer that is made of a material containing an oxide semiconductor and that is disposed between the first and second nonmagnetic metal layers. The MR element has a resistance-area product within a range of 0.1 to 0.3Ω·μm2, and the spacer layer has a conductivity within a range of 133 to 432 S/cm.

摘要翻译： MR元件包括：具有响应于信号磁场而改变的磁化方向的自由层; 具有固定的磁化方向的钉扎层; 以及设置在这些层之间的间隔层。 间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及由含有氧化物半导体的材料制成并且设置在第一和第二非磁性金属层之间的半导体层。 MR元件的电阻面积为0.1〜0.3Ω·Ω·cm 2，间隔层的导电率为133〜432S / cm。

公开(公告)号：US20100152368A1

公开(公告)日：2010-06-17

申请号：US12067821

申请日：2006-09-21

申请人： Yoshio Hirayama ,  Kei Hirata ,  Koichi Wada ,  Kenji Shachi

发明人： Yoshio Hirayama ,  Kei Hirata ,  Koichi Wada ,  Kenji Shachi

IPC分类号： C08L47/00

CPC分类号： C08L21/00 ,  C08K3/36 ,  C08K5/548 ,  C08L9/00 ,  C08L13/00 ,  C08L15/00 ,  C08L2666/02

摘要： The present invention relates to a rubber composition comprising 100 parts by mass of a solid diene-based rubber (1), 5 to 150 parts by mass of silica (2), 0.1 to 50 parts by mass of a liquid diene-based rubber (3) which is modified with an unsaturated carboxylic acid and/or derivative thereof and has a number average molecular weight of 5000 to 100000, and further 0,1 to 50 parts by mass of an unmodified liquid diene-based rubber (4) having a number average molecular weight of 5000 to 100000 with respect to 100 parts by mass of the solid diene-based rubber (1) and/or 1.5 to 14.0 parts by mass of water (5) with respect to 100 parts by mass of silica (2), and a crosslinked product obtained by crosslinking the rubber composition.A rubber composition obtained by the present invention is improved in processability when silica is added and mixed with a diene-based rubber and is excellent in dynamic properties after crosslinking.

摘要翻译： 本发明涉及一种橡胶组合物，其包含100质量份固体二烯系橡胶（1），5〜150质量份二氧化硅（2），0.1〜50质量份液态二烯系橡胶（ 3），其用不饱和羧酸和/或其衍生物改性，数均分子量为5000〜100000，进一步为0.1〜50质量份未改性的液体二烯类橡胶（4），其具有 相对于100质量份的固体二烯系橡胶（1），数均分子量为5000〜100000，和/或相对于100质量份的二氧化硅（2）为1.5〜14.0质量份的水（5） ）和通过使橡胶组合物交联而得到的交联物。 通过本发明获得的橡胶组合物在加入二氧化硅并与二烯系橡胶混合时的加工性提高，交联后的动态性能优异。

公开(公告)号：US07679861B2

公开(公告)日：2010-03-16

申请号：US11591504

申请日：2006-11-02

申请人： Kei Hirata ,  Kiyoshi Noguchi

发明人： Kei Hirata ,  Kiyoshi Noguchi

IPC分类号： G11B5/31

CPC分类号： G11B5/3116 ,  G11B5/1278

摘要： A pole layer incorporates a track width defining portion and a wide portion. The track width defining portion has an end face that is located in the medium facing surface and that defines the track width. The maximum width of the wide portion is greater than the track width and equal to or greater than the length of the wide portion taken in the direction orthogonal to the medium facing surface. When the coil is generating no magnetic field, in the end face of the track width defining portion, there exist first and second regions in which the directions of components of magnetization orthogonal to the medium facing surface are opposite.

摘要翻译： 极层包括轨道宽度限定部分和宽部分。 轨道宽度限定部分具有位于介质面向表面中并限定轨道宽度的端面。 宽部分的最大宽度大于轨道宽度，并且等于或大于在与面向介质的表面正交的方向上拍摄的宽部分的长度。 当线圈不产生磁场时，在轨道宽度限定部分的端面中，存在第一和第二区域，其中与面向介质的表面正交的磁化分量的方向相反。

公开(公告)号：US20100053819A1

公开(公告)日：2010-03-04

申请号：US12230781

申请日：2008-09-04

申请人： Kei Hirata ,  Takayasu Kanaya ,  Kosuke Tanaka ,  Shinji Hara

发明人： Kei Hirata ,  Takayasu Kanaya ,  Kosuke Tanaka ,  Shinji Hara

IPC分类号： G11B5/33

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

摘要： The invention is devised to provide a method of manufacturing a thin film magnetic head including a magnetoresistive element having higher reading performance. In manufacturing the thin film magnetic head, after forming an MR element 15, a pair of magnetic domain controlling layers 16 are formed by stacking a buffer layer 161, a magnetic bias layer 162 and a cap layer 163 in this order on both sides, in a track-width direction, of the MR element 15 via an insulating layer 14 respectively. Then, a cap layer 17 is formed so as to cover the upper surface of the MR element 15 and connect the pair of cap-layers 163. After that, a gap adjustment layer 18 and a top shielding layer 19 are formed in order so as to cover the pair of cap layers 163 and the cap layer 17, thereby a read head section 10 is completed. In this manner, the upper surface of the magnetic bias layer 162 is in contact only with the cap-layer 17 and the cap-layer 163, which are made of a material excellent in crystal lattice compatibility with the magnetic bias layer 162. As a result, the coercive force of the magnetic bias layer 162 can be increased. What is more, roughness of the undersurface of the top shielding layer 19 can be improved because of the presence of the cap layer 17.

摘要翻译： 本发明旨在提供一种制造包括具有更高读取性能的磁阻元件的薄膜磁头的方法。 在制造薄膜磁头时，在形成MR元件15之后，通过在两侧依次层叠缓冲层161，磁偏置层162和盖层163，形成一对磁畴控制层16 分别经由绝缘层14的MR元件15的轨道宽度方向。 然后，形成盖层17，以覆盖MR元件15的上表面并连接一对盖层163.之后，依次形成间隙调整层18和顶部屏蔽层19，以便 覆盖一对盖层163和盖层17，从而完成读头部10。 以这种方式，磁偏置层162的上表面仅与盖层17和盖层163接触，盖层17和盖层163由与磁偏置层162的晶格相容性优异的材料制成。作为 结果，可以增加磁偏置层162的矫顽力。 此外，由于存在盖层17，所以可以提高顶部屏蔽层19的下表面的粗糙度。