公开(公告)号：US12074049B2

公开(公告)日：2024-08-27

申请号：US16452462

申请日：2019-06-25

Applicant: LAM RESEARCH CORPORATION

Inventor： Eric A. Pape

IPC: H01L21/683 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/6833 ,  C23C16/4404 ,  C23C16/4409 ,  C23C16/45544 ,  C23C16/4583 ,  H01J37/32082 ,  H01J37/32477 ,  H01J37/32513 ,  H01J37/32715 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68757 ,  H01L21/68785 ,  H01J2237/334

Abstract: A substrate support for a substrate processing chamber includes a baseplate, a ceramic layer bonded to the baseplate, and a seal provided in an outer perimeter of an interface between the ceramic layer and the baseplate. The seal is arranged to seal the interface from the substrate processing chamber and includes an adhesive comprising a first material arranged in the outer perimeter of the interface between the ceramic layer and the baseplate and a ring arranged in the outer perimeter of the interface between the ceramic layer and the baseplate. The ring is removable and comprises a second material having a greater resistance to plasma erosion than the first material.

公开(公告)号：US10667379B2

公开(公告)日：2020-05-26

申请号：US15586203

申请日：2017-05-03

Applicant: Lam Research Corporation

Inventor： Yuma Ohkura ,  Darrell Ehrlich ,  Eric A. Pape

IPC: H05B3/03 ,  H05B3/06 ,  H05B3/28 ,  H05K1/11 ,  H05K3/10 ,  H05K1/02 ,  H05K1/03 ,  H05B3/26 ,  H01L21/683 ,  H01L21/67

Abstract: A substrate support for a substrate processing system includes a plurality of heating zones, a baseplate, a heating layer arranged on the baseplate, a ceramic layer arranged on the heating layer, and wiring provided through the baseplate, the heating layer, and into the ceramic layer in a first zone of the plurality of heating zones. An electrical connection is routed from the wiring in the first zone, across the ceramic layer to a second zone of the plurality of heating zones, and to a heating element in the heating layer in the second zone.

公开(公告)号：US20200075389A1

公开(公告)日：2020-03-05

申请号：US16121229

申请日：2018-09-04

Applicant: Lam Research Corporation

Inventor： Siyuan Tian ,  Eric A. Pape

IPC: H01L21/687 ,  H01L21/67

Abstract: Various embodiments include apparatuses to raise and lower substrates, as used in the semiconductor and allied industries, toward or away from a substrate-holding mechanism (e.g., such as an electrostatic chuck (ESC). In a specific embodiment, a substrate lift-mechanism includes a number of pins to position the substrate above a substrate-holding device. Mid-position sensors are respectively coupled to a corresponding pin. The mid-position sensors monitor an intermediate position of the corresponding pin between a maximum position and a minimum position. Other apparatuses and systems are disclosed.

公开(公告)号：US20200066564A1

公开(公告)日：2020-02-27

申请号：US16108416

申请日：2018-08-22

Applicant: Lam Research Corporation

Inventor： Feng Wang ,  Eric A. Pape

IPC: H01L21/683 ,  H01L21/67

Abstract: A substrate support includes: a first plate configured to support a substrate; and a second plate that is connected to the first plate. The second plate includes at least one of: an internal coolant channel configured to receive coolant; and an internal gas channel configured to receive gas. The at least one of the internal coolant channel and the internal gas channel includes one of: chamfered internal corners; and staired internal corners.

公开(公告)号：US20180374763A1

公开(公告)日：2018-12-27

申请号：US16056967

申请日：2018-08-07

Applicant: Lam Research Corporation

Inventor： Keith William Gaff ,  Tom Anderson ,  Keith Comendant ,  Ralph Jan-Pin Lu ,  Paul Robertson ,  Eric A. Pape ,  Neil Benjamin

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L22/14 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.

公开(公告)号：US10096506B2

公开(公告)日：2018-10-09

申请号：US15897669

申请日：2018-02-15

Applicant: LAM RESEARCH CORPORATION

Inventor： Tao Zhang ,  Ole Waldmann ,  Eric A. Pape

IPC: H01L21/00 ,  H01L21/683 ,  G05D23/19 ,  H01L21/67 ,  H01L21/66

Abstract: A temperature controller for a substrate processing system includes an interface configured to receive a processing temperature corresponding to a desired processing temperature of a substrate. The temperature controller includes a thermal control element controller configured to selectively control a thermal control element to adjust a temperature of a substrate support. The thermal control element controller is further configured to, prior to the substrate being loaded onto the substrate support, determine at least one of a temperature of the substrate support and a temperature of the substrate and, based on the processing temperature and the at least one of the temperature of the substrate support and the temperature of the substrate, control the thermal control element to adjust the temperature of the substrate support to a setpoint temperature that is different than the processing temperature.

公开(公告)号：US20180005857A1

公开(公告)日：2018-01-04

申请号：US15200405

申请日：2016-07-01

Applicant: Lam Research Corporation

Inventor： Tao Zhang ,  Siyuan Tian ,  Eric A. Pape ,  Jorge Jose Zaninovich

IPC: H01L21/673 ,  H01J37/32 ,  C23C16/505 ,  H01L21/683

Abstract: A temperature controller is provided and includes interfaces, a compensation controller, summers, and a second controller. An interface receives a bias power signal and a plasma signal. The bias power signal indicates a bias RF power level of a RF generator. The plasma signal indicates a plasma RF power level of another RF generator. Another interface receives a temperature signal indicating a temperature of a substrate support. The compensation controller generates a compensation value based on a bias feed-forward transfer function and the bias RF power level and another compensation value based on a plasma feed-forward transfer function and the plasma RF power level. A summer generates an error signal based on a set point and the temperature. The second controller generates a control signal based on the error signal. Another summer controls an actuator to adjust the temperature based on the compensation values and the control signal.

公开(公告)号：US20160372355A1

公开(公告)日：2016-12-22

申请号：US14860045

申请日：2015-09-21

Applicant: Lam Research Corporation

Inventor： Tao Zhang ,  Ole Waldmann ,  Eric A. Pape

IPC: H01L21/683 ,  H01L21/66 ,  H01L21/67 ,  G01K3/08

CPC classification number: H01L21/6831 ,  G05D23/1931 ,  H01L21/67109 ,  H01L21/67248 ,  H01L22/20

Abstract: A system for controlling a substrate temperature in a substrate processing system includes a substrate support device, a controller, a temperature sensor, and a thermal control element (TCE). The controller is configured to, during a first period, control the TCE to adjust the temperature of the substrate support device to a temperature value based on a temperature difference between the substrate temperature before the substrate is loaded onto the substrate support device and a desired temperature for the substrate support device. The temperature value is not equal to the desired temperature. The substrate is loaded onto the substrate support device after the first period begins and before the temperature of the substrate support device returns to the desired temperature. The controller is further configured to, during a second period following the first period, control the temperature of the substrate support device to the desired temperature for the substrate support device.

Abstract translation: 用于控制基板处理系统中的基板温度的系统包括基板支撑装置，控制器，温度传感器和热控制元件（TCE）。 控制器被配置为在第一时段期间控制TCE以基于衬底被加载到衬底支撑装置之前的衬底温度和所需温度之间的温度差来调节衬底支撑装置的温度到温度值 用于基板支撑装置。 温度值不等于所需温度。 在第一周期开始之后并且在基板支撑装置的温度恢复到所需温度之前，将基板装载到基板支撑装置上。 控制器还被配置为在第一时段之后的第二时段期间，将衬底支撑装置的温度控制到衬底支撑装置的期望温度。

公开(公告)号：US20160372352A1

公开(公告)日：2016-12-22

申请号：US14859951

申请日：2015-09-21

Applicant: Lam Research Corporation

Inventor： Benny Wu ,  Eric A. Pape ,  Keith William Gaff

IPC: H01L21/67 ,  G05B19/418 ,  G05D23/19 ,  H01L21/683

CPC classification number: H01L21/67248 ,  H01J2237/2001 ,  H01L21/324 ,  H01L21/6831 ,  H01L22/12

Abstract: A system for controlling a temperature of a wafer processing substrate includes memory that stores first data indicative of first temperature responses of at least one first thermal control element. The first data corresponds to the first temperature responses as observed when a first control parameter of the at least one first thermal control element is maintained at a first predetermined first value. A first controller receives a setpoint temperature for the wafer processing substrate and maintains the first control parameter of the at least one first thermal control element at a second value based on the received setpoint temperature. A second controller retrieves the first data from the memory, calculates second data indicative of temperature non-uniformities associated with the wafer processing substrate based on the first data and the second value, and controls a plurality of second thermal control elements based on the calculated second data.

Abstract translation: 用于控制晶片处理衬底的温度的系统包括存储器，其存储指示至少一个第一热控制元件的第一温度响应的第一数据。 第一数据对应于当至少一个第一热控制元件的第一控制参数保持在第一预定第一值时观察到的第一温度响应。 第一控制器接收晶片处理衬底的设定点温度，并且基于所接收的设定点温度将所述至少一个第一热控制元件的第一控制参数保持在第二值。 第二控制器从存储器检索第一数据，基于第一数据和第二值计算指示与晶片处理衬底相关联的温度不均匀性的第二数据，并且基于计算的第二数据控制多个第二热控元件 数据。

公开(公告)号：US20150364388A1

公开(公告)日：2015-12-17

申请号：US14307062

申请日：2014-06-17

Applicant: Lam Research Corporation

Inventor： Ole Waldmann ,  Eric A. Pape ,  Keith William Gaff ,  Harmeet Singh

IPC: H01L21/66

CPC classification number: H01L21/67109 ,  H01L21/67248 ,  H01L21/67288

Abstract: A method for auto-correction of at least one malfunctioning thermal control element among an array of thermal control elements that are independently controllable and located in a temperature control plate of a substrate support assembly which supports a semiconductor substrate during processing thereof, the method including: detecting, by a control unit including a processor, that at least one thermal control element of the array of thermal control elements is malfunctioning; deactivating, by the control unit, the at least one malfunctioning thermal control element; and modifying, by the control unit, a power level of at least one functioning thermal control element in the temperature control plate to minimize impact of the malfunctioning thermal control element on the desired temperature output at the location of the at least one malfunctioning thermal control element.

Abstract translation: 一种用于自动校正热控制元件阵列中的至少一个故障热控元件的方法，所述热控制元件阵列可独立控制并位于在其处理期间支撑半导体衬底的衬底支撑组件的温度控制板中，所述方法包括： 通过包括处理器的控制单元检测所述热控元件阵列中的至少一个热控元件是故障的; 由所述控制单元使所述至少一个故障热控制元件停用; 以及通过所述控制单元修改所述温度控制板中的至少一个功能性热控制元件的功率水平，以使所述故障热控制元件对所述至少一个故障热控制元件的位置处的所需温度输出的影响最小化 。