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公开(公告)号：US06171763B2
公开(公告)日：2001-01-09
申请号：US09204651
申请日：1998-12-02
申请人： Fei Wang , Christopher F. Lyons , Khanh B. Nguyen , Scott A. Bell , Harry J. Levinson , Chih Yuh Yang
发明人： Fei Wang , Christopher F. Lyons , Khanh B. Nguyen , Scott A. Bell , Harry J. Levinson , Chih Yuh Yang
IPC分类号： G03F700
CPC分类号： H01L21/32139 , G03F7/094 , G03F7/40 , G03F7/405 , H01L21/32136
摘要： In one embodiment, the present invention relates to a method of forming a metal line, involving the steps of providing a semiconductor substrate comprising a metal layer, a silicon nitride layer over the metal layer, and an oxide layer over the silicon nitride layer; depositing an ultra-thin photoresist over the oxide layer, the ultra-thin photoresist having a thickness less than about 2,000 Å; irradiating the ultra-thin photoresist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin photoresist exposing a portion of the oxide layer; etching the exposed portion of the oxide layer exposing a portion of the silicon nitride layer; etching the exposed portion of the silicon nitride layer exposing a portion of the metal layer; and etching the exposed portion of the metal layer thereby forming the metal line.
摘要翻译： 在一个实施例中，本发明涉及一种形成金属线的方法，包括以下步骤：提供包括金属层的半导体衬底，金属层上的氮化硅层和氮化硅层上的氧化物层; 在所述氧化物层上沉积超薄光致抗蚀剂，所述超薄光致抗蚀剂具有小于约的厚度; 用波长约250nm或更小的电磁辐射照射超薄光致抗蚀剂; 显影暴露一部分氧化物层的超薄光刻胶; 蚀刻暴露出氮化硅层的一部分的氧化物层的暴露部分; 蚀刻暴露出金属层的一部分的氮化硅层的暴露部分; 并且蚀刻金属层的暴露部分从而形成金属线。
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公开(公告)号：US6020269A
公开(公告)日：2000-02-01
申请号：US203461
申请日：1998-12-02
申请人： Fei Wang , Christopher F. Lyons , Khanh B. Nguyen , Scott A. Bell , Harry J. Levinson , Chih Yuh Yang
发明人： Fei Wang , Christopher F. Lyons , Khanh B. Nguyen , Scott A. Bell , Harry J. Levinson , Chih Yuh Yang
IPC分类号： H01L21/3213 , H01L21/302
CPC分类号： H01L21/32139
摘要： In one embodiment, the present invention relates to a method of forming a metal line, involving the steps of providing a semiconductor substrate comprising a metal layer, an oxide layer over the metal layer, and a silicon nitride layer over the oxide layer; depositing an ultra-thin photoresist over the silicon nitride layer, the ultra-thin photoresist having a thickness less than about 2,000 .ANG.; irradiating the ultra-thin photoresist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin photoresist exposing a portion of the silicon nitride layer; etching the exposed portion of the silicon nitride layer exposing a portion of the oxide layer; etching the exposed portion of the oxide layer exposing a portion of the metal layer; and etching the exposed portion of the metal layer thereby forming the metal line.
摘要翻译： 在一个实施方案中，本发明涉及一种形成金属线的方法，包括以下步骤：提供包含金属层的半导体衬底，金属层上的氧化物层和氧化物层上的氮化硅层; 在氮化硅层上沉积超薄光致抗蚀剂，超薄光致抗蚀剂的厚度小于约2,000安培; 用波长约250nm或更小的电磁辐射照射超薄光致抗蚀剂; 显影暴露氮化硅层的一部分的超薄光刻胶; 蚀刻暴露出氧化物层的一部分的氮化硅层的暴露部分; 蚀刻暴露出金属层的一部分的氧化物层的暴露部分; 并且蚀刻金属层的暴露部分从而形成金属线。
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33.发明授权公开(公告)号：US07985513B2
公开(公告)日：2011-07-26
申请号：US12050383
申请日：2008-03-18
IPC分类号： G03F1/00
摘要： Fluorine-passivated reticles for use in lithography and methods for fabricating and using such reticles are provided. According to one embodiment, a method for performing photolithography comprises placing a fluorine-passivated reticle between an illumination source and a target semiconductor wafer and causing electromagnetic radiation to pass from the illumination source through the fluorine-passivated reticle to the target semiconductor wafer. In another embodiment, a fluorine-passivated reticle comprises a substrate and a patterned fluorine-passivated absorber material layer overlying the substrate. According to another embodiment, a method for fabricating a reticle for use in photolithography comprises providing a substrate and forming a fluorine-passivated absorber material layer overlying the substrate.
摘要翻译： 提供用于光刻的氟钝化的掩模版以及制造和使用这种掩模版的方法。 根据一个实施例，一种用于执行光刻的方法包括在照明源和目标半导体晶片之间放置氟钝化的掩模版，并使电磁辐射从照明源通过氟钝化掩模版到达目标半导体晶片。 在另一个实施例中，氟钝化的掩模版包括衬底和覆盖衬底的图案化的氟钝化吸收材料层。 根据另一实施例，一种用于光刻中使用的掩模版的制造方法包括提供基板并形成覆盖在基板上的氟钝化的吸收材料层。
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公开(公告)号：US07851136B2
公开(公告)日：2010-12-14
申请号：US11421327
申请日：2006-05-31
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , G03F7/0035
摘要： An integrated circuit fabrication process as described herein employs a photoresist stabilization step where patterned photoresist material is exposed to radiation having a wavelength that promotes cross-linking in the shallow surfaces of the patterned photoresist features. The patterned photoresist material is highly absorptive of the stabilizing radiation, which results in the surface cross-linking and modification of the outer surfaces of the patterned photoresist material. This modified “shell” is immune to photoresist developer, photoresist solvents, intense ion implantation, and intense etchants. The shell also enables for the resist not to deform when baked at a temperature above its glass transition temperature. For example, the photoresist stabilization technique can be used in a double exposure process such that a patterned photoresist layer remains intact during a subsequent lithographic sub-process.
摘要翻译： 如本文所述的集成电路制造方法采用光致抗蚀剂稳定步骤，其中图案化的光致抗蚀剂材料暴露于具有促进图案化光致抗蚀剂特征的浅表面中的交联的波长的辐射。 图案化的光致抗蚀剂材料对稳定辐射是高度吸收的，这导致图案化光致抗蚀剂材料的外表面的表面交联和修饰。 这种改性的“壳”对光致抗蚀剂显影剂，光致抗蚀剂溶剂，强离子注入和强蚀刻剂是免疫的。 壳体还使得当在高于其玻璃化转变温度的温度下烘烤时，抗蚀剂不会变形。 例如，光致抗蚀剂稳定技术可以用于双重曝光工艺中，使得图案化的光致抗蚀剂层在随后的光刻子过程期间保持完整。
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35.发明授权Method for removal of immersion lithography medium in immersion lithography processes 有权在浸没式光刻工艺中去除浸没式光刻介质的方法公开(公告)号：US07741012B1
公开(公告)日：2010-06-22
申请号：US10790457
申请日：2004-03-01
申请人： Adam R. Pawloski , Amr Y. Abdo , Gilles R. Amblard , Bruno M. LaFontaine , Ivan Lalovic , Harry J. Levinson , Jeffrey A. Schefske , Cyrus E. Tabery , Frank Tsai
发明人： Adam R. Pawloski , Amr Y. Abdo , Gilles R. Amblard , Bruno M. LaFontaine , Ivan Lalovic , Harry J. Levinson , Jeffrey A. Schefske , Cyrus E. Tabery , Frank Tsai
IPC分类号： G03F7/00
CPC分类号： G03F7/70341
摘要： A process for fabricating a semiconductor device, including applying an immersion lithography medium to a surface of a semiconductor wafer; exposing a material on the surface of the semiconductor wafer to electromagnetic radiation having a selected wavelength; and applying supercritical carbon dioxide to the semiconductor wafer to remove the immersion lithography medium from the surface of the semiconductor wafer. In one embodiment, the process includes recovery of the immersion lithography medium.
摘要翻译： 一种制造半导体器件的方法，包括将浸没光刻介质施加到半导体晶片的表面; 将半导体晶片表面上的材料暴露于具有选定波长的电磁辐射; 以及将超临界二氧化碳施加到所述半导体晶片以从所述半导体晶片的表面去除所述浸没式光刻介质。 在一个实施例中，该方法包括浸没式光刻介质的回收。
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36.发明申请Method for forming a high resolution resist pattern on a semiconductor wafer 有权在半导体晶片上形成高分辨率抗蚀剂图案的方法公开(公告)号：US20080233494A1
公开(公告)日：2008-09-25
申请号：US11726433
申请日：2007-03-22
IPC分类号： G03C11/00
CPC分类号： G03F7/38
摘要： In one disclosed embodiment, a method for forming a high resolution resist pattern on a semiconductor wafer involves forming a layer of resist comprising, for example a polymer matrix and a catalytic species, over a material layer formed over a semiconductor wafer; exposing the layer of resist to patterned radiation; and applying a magnetic field to the semiconductor wafer during a post exposure bake process. In one embodiment, the patterned radiation is provided by an extreme ultraviolet (EUV) light source. In other embodiments, the source of patterned radiation can be an electron beam, or ion beam, for example. In one embodiment, the polymer matrix is an organic polymer matrix such as, for example, styrene, acrylate, or methacrylate. In one embodiment, the catalytic species can be, for example, an acid, a base, or an oxidizing agent.
摘要翻译： 在一个公开的实施例中，在半导体晶片上形成高分辨率抗蚀剂图案的方法包括在半导体晶片上形成的材料层上形成包含例如聚合物基质和催化物质的抗蚀剂层; 将抗蚀剂层暴露于图案化辐射; 以及在后曝光烘烤处理期间向半导体晶片施加磁场。 在一个实施例中，图案化的辐射由极紫外（EUV）光源提供。 在其它实施例中，图案化辐射源可以是例如电子束或离子束。 在一个实施方案中，聚合物基质是有机聚合物基质，例如苯乙烯，丙烯酸酯或甲基丙烯酸酯。 在一个实施方案中，催化物质可以是例如酸，碱或氧化剂。
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37.发明授权Method and apparatus for monitoring and controlling imaging in immersion lithography systems 有权浸没光刻系统中成像监测和控制的方法和装置公开(公告)号：US07061578B2
公开(公告)日：2006-06-13
申请号：US10638927
申请日：2003-08-11
申请人： Harry J. Levinson
发明人： Harry J. Levinson
CPC分类号： G03F7/70341
摘要： A method of monitoring an immersion lithography system in which a wafer can be immersed in a liquid immersion medium for exposure by an exposure pattern. The method detects the presence of a foreign body in the immersion medium to thereby determine if the immersion medium in a state that is acceptable for exposing the wafer with the exposure pattern. Also disclosed is a monitoring and control system for an immersion lithography system.
摘要翻译： 一种监测浸没式光刻系统的方法，其中晶片可以浸在用于通过曝光图案曝光的浸液介质中。 该方法检测浸没介质中异物的存在，从而确定浸没介质是否以可曝光晶片曝光的状态。 还公开了一种用于浸没式光刻系统的监视和控制系统。
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公开(公告)号：US06627355B2
公开(公告)日：2003-09-30
申请号：US09742970
申请日：2000-12-20
IPC分类号： G03F900
摘要： The present invention provides a method of and system for reducing the absorption of light by opaque material in a photomask. The method includes providing a photomask substrate, and applying an opaque material to one side of the photomask substrate. The interface between the opaque material and photomask substrate reflects at least 80 percent of the light through the photomask.
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公开(公告)号：US06544885B1
公开(公告)日：2003-04-08
申请号：US09706498
申请日：2000-11-03
申请人： Khanh B. Nguyen , Harry J. Levinson , Christopher F. Lyons , Scott A. Bell , Fei Wang , Chih Yuh Yang
发明人： Khanh B. Nguyen , Harry J. Levinson , Christopher F. Lyons , Scott A. Bell , Fei Wang , Chih Yuh Yang
IPC分类号： H01L2358
CPC分类号： H01L21/76895 , H01L21/32139 , H01L2924/0002 , Y10S438/95 , H01L2924/00
摘要： A method of forming a conductor pattern on a base with uneven topography includes placing conductor material on the base, placing a hard mask material on the conductor material, planarizing an exposed surface of the hard mask material, and placing a layer of resist on the hard mask material. The resist is patterned and the patterned resist is used in selectively etching the hard mask material, with the hard mask material used in selectively etching the underlying conductor material. By planarizing the hard mask material prior to placing a layer of resist thereupon, uniformity of the resist coating is enhanced and depth of focus problems in exposing the resist are reduced.
摘要翻译： 在具有不平坦的地形的基底上形成导体图案的方法包括将导体材料放置在基底上，将硬掩模材料放置在导体材料上，平坦化硬掩模材料的暴露表面，以及将一层抗蚀剂放置在硬 面具材料。 抗蚀剂被图案化，并且图案化的抗蚀剂用于选择性地蚀刻硬掩模材料，其中硬掩模材料用于选择性蚀刻下面的导体材料。 通过在放置一层抗蚀剂之前对硬掩模材料进行平面化，抗蚀剂涂层的均匀性得到提高，并且降低了曝光抗蚀剂的焦点深度问题。
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公开(公告)号：US06306560B1
公开(公告)日：2001-10-23
申请号：US09204630
申请日：1998-12-02
申请人： Fei Wang , Christopher F. Lyons , Khanh B. Nguyen , Scott A. Bell , Harry J. Levinson , Chih Yuh Yang
发明人： Fei Wang , Christopher F. Lyons , Khanh B. Nguyen , Scott A. Bell , Harry J. Levinson , Chih Yuh Yang
IPC分类号： G03C500
CPC分类号： H01L21/31144 , H01L21/0274 , H01L21/0332 , H01L21/31116 , H01L21/32139
摘要： In one embodiment, the present invention relates to a method of forming a metal line, involving the steps of providing a semiconductor substrate comprising a metal layer, an oxide layer over the metal layer, and a silicon oxynitride layer over the oxide layer; depositing an ultra-thin photoresist over the silicon oxynitride layer, the ultra-thin photoresist having a thickness less than about 2,000 Å; irradiating the ultra-thin photoresist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin photoresist exposing a portion of the silicon oxynitride layer; etching the exposed portion of the silicon oxynitride layer exposing a portion of the oxide layer; etching the exposed portion of the oxide layer exposing a portion of the metal layer; and etching the exposed portion of the metal layer thereby forming the metal line.
摘要翻译： 在一个实施例中，本发明涉及一种形成金属线的方法，包括以下步骤：在氧化物层上方提供包括金属层，金属层上的氧化物层和氧氮化硅层的半导体衬底; 在所述氮氧化硅层上沉积超薄光致抗蚀剂，所述超薄光致抗蚀剂具有小于约的厚度; 用波长约250nm或更小的电磁辐射照射超薄光致抗蚀剂; 显影暴露一部分氮氧化硅层的超薄光刻胶; 蚀刻暴露氧化物层的一部分的氧氮化硅层的暴露部分; 蚀刻暴露出金属层的一部分的氧化物层的暴露部分; 并且蚀刻金属层的暴露部分从而形成金属线。
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