公开(公告)号：US06309926B1

公开(公告)日：2001-10-30

申请号：US09205211

申请日：1998-12-04

申请人： Scott A. Bell ,  Christopher F. Lyons ,  Harry J. Levinson ,  Khanh B. Nguyen ,  Fei Wang ,  Chih Yuh Yang

发明人： Scott A. Bell ,  Christopher F. Lyons ,  Harry J. Levinson ,  Khanh B. Nguyen ,  Fei Wang ,  Chih Yuh Yang

IPC分类号： H01L218242

CPC分类号： H01L27/11521 ,  H01L21/0274 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139 ,  H01L27/115

摘要： A method of forming a gate structure is provided. In the method, a nitride layer is formed on a gate material layer. An ultra-thin photoresist layer is formed on the nitride layer. The ultra-thin photoresist layer is patterned with short wavelength radiation to define a pattern for the gate. The ultra-thin photoresist layer is used as a mask during a first etch step to transfer the gate pattern to the nitride layer. The first etch step includes an etch chemistry that is selective to the nitride layer over the ultra-thin photoresist layer. The nitride layer is used as a hard mask during a second etch step to form the gate by transferring the gate pattern to the gate material layer via the second etch step.

摘要翻译： 提供一种形成栅极结构的方法。 在该方法中，在栅极材料层上形成氮化物层。 在氮化物层上形成超薄的光致抗蚀剂层。 用短波长辐射对超薄光致抗蚀剂层进行构图，以限定栅极的图案。 在第一蚀刻步骤期间，将超薄光致抗蚀剂层用作掩模，以将栅极图案转移到氮化物层。 第一蚀刻步骤包括对超薄光致抗蚀剂层上的氮化物层有选择性的蚀刻化学品。 在第二蚀刻步骤期间，氮化物层用作硬掩模，以通过经由第二蚀刻步骤将栅极图案转移到栅极材料层来形成栅极。

公开(公告)号：US06165695A

公开(公告)日：2000-12-26

申请号：US203150

申请日：1998-12-01

申请人： Chih Yuh Yang ,  Christopher F. Lyons ,  Harry J. Levinson ,  Khanh B. Nguyen ,  Fei Wang ,  Scott A. Bell

发明人： Chih Yuh Yang ,  Christopher F. Lyons ,  Harry J. Levinson ,  Khanh B. Nguyen ,  Fei Wang ,  Scott A. Bell

IPC分类号： H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  G03C5/00

CPC分类号： H01L21/31144 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/76816 ,  Y10S430/168

摘要： A method of forming a via structure is provided. In the method, a dielectric layer is formed on an anti-reflective coating (ARC) layer covering a first metal layer; and an amorphous silicon layer is formed on the dielectric layer. An ultra-thin photoresist layer is formed on the amorphous silicon layer, and the ultra-thin photoresist layer is patterned with short wavelength radiation to define a pattern for a via. The patterned ultra-thin photoresist layer is used as a mask during a first etch step to transfer the via pattern to the amorphous silicon layer. The first etch step includes an etch chemistry that is selective to the amorphous silicon layer over the ultra-thin photoresist layer and the dielectric layer. The amorphous silicon layer is employed as a hard mask during a second etch step to form a contact hole corresponding to the via pattern by etching portions of the dielectric layer.

摘要翻译： 提供一种形成通孔结构的方法。 在该方法中，在覆盖第一金属层的抗反射涂层（ARC）层上形成电介质层; 并且在该电介质层上形成非晶硅层。 在非晶硅层上形成超薄光致抗蚀剂层，并用短波长辐射对超薄光致抗蚀剂层进行构图，以限定通孔的图案。 在第一蚀刻步骤期间，将图案化超薄光致抗蚀剂层用作掩模，以将通孔图案转印到非晶硅层。 第一蚀刻步骤包括对超薄光致抗蚀剂层和介电层上的非晶硅层有选择性的蚀刻化学品。 在第二蚀刻步骤期间，非晶硅层用作硬掩模，以通过蚀刻介电层的部分形成对应于通孔图案的接触孔。

公开(公告)号：US6156658A

公开(公告)日：2000-12-05

申请号：US203774

申请日：1998-12-02

申请人： Fei Wang ,  Christopher F. Lyons ,  Khanh B. Nguyen ,  Scott A. Bell ,  Harry J. Levinson ,  Chih Yuh Yang

发明人： Fei Wang ,  Christopher F. Lyons ,  Khanh B. Nguyen ,  Scott A. Bell ,  Harry J. Levinson ,  Chih Yuh Yang

IPC分类号： H01L21/027 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/32139 ,  H01L21/0274 ,  H01L21/32136

摘要： In one embodiment, the present invention relates to a method of forming a metal line, involving the steps of providing a semiconductor substrate comprising a metal layer, an oxide layer over the metal layer, and a silicon layer over the oxide layer; depositing an ultra-thin photoresist over the silicon layer, the ultra-thin photoresist having a thickness less than about 2,000 .ANG.; irradiating the ultra-thin photoresist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin photoresist exposing a portion of the silicon layer; etching the exposed portion of the silicon layer exposing a portion of the oxide layer; etching the exposed portion of the oxide layer exposing a portion of the metal layer; and etching the exposed portion of the metal layer thereby forming the metal line.

摘要翻译： 在一个实施例中，本发明涉及一种形成金属线的方法，包括以下步骤：提供包括金属层的半导体衬底，金属层上的氧化物层和氧化物层上的硅层; 在硅层上沉积超薄光致抗蚀剂，超薄光致抗蚀剂的厚度小于约2,000安培; 用波长约250nm或更小的电磁辐射照射超薄光致抗蚀剂; 开发暴露一部分硅层的超薄光刻胶; 蚀刻暴露出氧化物层的一部分的硅层的暴露部分; 蚀刻暴露出金属层的一部分的氧化物层的暴露部分; 并且蚀刻金属层的暴露部分从而形成金属线。

公开(公告)号：US06740566B2

公开(公告)日：2004-05-25

申请号：US09398641

申请日：1999-09-17

申请人： Christopher F. Lyons ,  Scott A. Bell ,  Harry J. Levinson ,  Khanh B. Nguyen ,  Fei Wang ,  Chih Yuh Yang

发明人： Christopher F. Lyons ,  Scott A. Bell ,  Harry J. Levinson ,  Khanh B. Nguyen ,  Fei Wang ,  Chih Yuh Yang

IPC分类号： H01L2176

CPC分类号： H01L21/76224

摘要： In one embodiment, the present invention relates to a method of forming a shallow trench, involving the steps of providing a semiconductor substrate comprising a barrier oxide layer over at the semiconductor substrate and a nitride layer over the barrier oxide layer; depositing an ultra-thin photoresist over the nitride layer, the ultra-thin photoresist having a thickness of about 2,000 Å or less; patterning the ultra-thin photoresist to expose a portion of the nitride layer and to define a pattern for the shallow trench; etching the exposed portion of the nitride layer with an etchant having a nitride:photoresist selectivity of at least about 10:1 to expose a portion of the barrier oxide layer; etching the exposed portion of the barrier oxide layer to expose a portion of the semiconductor substrate; and etching the exposed portion of the semiconductor substrate to provide the shallow trench. In another embodiment, the method further involves depositing an insulating filler material into the shallow trench to provide a shallow trench isolation region.

摘要翻译： 在一个实施例中，本发明涉及一种形成浅沟槽的方法，包括以下步骤：在半导体衬底上提供包括阻挡氧化物层的半导体衬底，以及在阻挡氧化物层上方的氮化物层; 在所述氮化物层上沉积超薄光致抗蚀剂，所述超薄光致抗蚀剂具有约2,000或更小的厚度; 图案化超薄光致抗蚀剂以暴露氮化物层的一部分并且限定用于浅沟槽的图案; 用具有至少约10:1的氮化物：光致抗蚀剂选择性的蚀刻剂蚀刻氮化物层的暴露部分以暴露部分阻挡氧化物层; 蚀刻阻挡氧化物层的暴露部分以暴露半导体衬底的一部分; 并蚀刻半导体衬底的暴露部分以提供浅沟槽。 在另一个实施例中，该方法还包括将绝缘填充材料沉积到浅沟槽中以提供浅沟槽隔离区域。

公开(公告)号：US06171763B2

公开(公告)日：2001-01-09

申请号：US09204651

申请日：1998-12-02

申请人： Fei Wang ,  Christopher F. Lyons ,  Khanh B. Nguyen ,  Scott A. Bell ,  Harry J. Levinson ,  Chih Yuh Yang

发明人： Fei Wang ,  Christopher F. Lyons ,  Khanh B. Nguyen ,  Scott A. Bell ,  Harry J. Levinson ,  Chih Yuh Yang

IPC分类号： G03F700

CPC分类号： H01L21/32139 ,  G03F7/094 ,  G03F7/40 ,  G03F7/405 ,  H01L21/32136

摘要： In one embodiment, the present invention relates to a method of forming a metal line, involving the steps of providing a semiconductor substrate comprising a metal layer, a silicon nitride layer over the metal layer, and an oxide layer over the silicon nitride layer; depositing an ultra-thin photoresist over the oxide layer, the ultra-thin photoresist having a thickness less than about 2,000 Å; irradiating the ultra-thin photoresist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin photoresist exposing a portion of the oxide layer; etching the exposed portion of the oxide layer exposing a portion of the silicon nitride layer; etching the exposed portion of the silicon nitride layer exposing a portion of the metal layer; and etching the exposed portion of the metal layer thereby forming the metal line.

摘要翻译： 在一个实施例中，本发明涉及一种形成金属线的方法，包括以下步骤：提供包括金属层的半导体衬底，金属层上的氮化硅层和氮化硅层上的氧化物层; 在所述氧化物层上沉积超薄光致抗蚀剂，所述超薄光致抗蚀剂具有小于约的厚度; 用波长约250nm或更小的电磁辐射照射超薄光致抗蚀剂; 显影暴露一部分氧化物层的超薄光刻胶; 蚀刻暴露出氮化硅层的一部分的氧化物层的暴露部分; 蚀刻暴露出金属层的一部分的氮化硅层的暴露部分; 并且蚀刻金属层的暴露部分从而形成金属线。

公开(公告)号：US6020269A

公开(公告)日：2000-02-01

申请号：US203461

申请日：1998-12-02

申请人： Fei Wang ,  Christopher F. Lyons ,  Khanh B. Nguyen ,  Scott A. Bell ,  Harry J. Levinson ,  Chih Yuh Yang

发明人： Fei Wang ,  Christopher F. Lyons ,  Khanh B. Nguyen ,  Scott A. Bell ,  Harry J. Levinson ,  Chih Yuh Yang

IPC分类号： H01L21/3213 ,  H01L21/302

CPC分类号： H01L21/32139

摘要： In one embodiment, the present invention relates to a method of forming a metal line, involving the steps of providing a semiconductor substrate comprising a metal layer, an oxide layer over the metal layer, and a silicon nitride layer over the oxide layer; depositing an ultra-thin photoresist over the silicon nitride layer, the ultra-thin photoresist having a thickness less than about 2,000 .ANG.; irradiating the ultra-thin photoresist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin photoresist exposing a portion of the silicon nitride layer; etching the exposed portion of the silicon nitride layer exposing a portion of the oxide layer; etching the exposed portion of the oxide layer exposing a portion of the metal layer; and etching the exposed portion of the metal layer thereby forming the metal line.

摘要翻译： 在一个实施方案中，本发明涉及一种形成金属线的方法，包括以下步骤：提供包含金属层的半导体衬底，金属层上的氧化物层和氧化物层上的氮化硅层; 在氮化硅层上沉积超薄光致抗蚀剂，超薄光致抗蚀剂的厚度小于约2,000安培; 用波长约250nm或更小的电磁辐射照射超薄光致抗蚀剂; 显影暴露氮化硅层的一部分的超薄光刻胶; 蚀刻暴露出氧化物层的一部分的氮化硅层的暴露部分; 蚀刻暴露出金属层的一部分的氧化物层的暴露部分; 并且蚀刻金属层的暴露部分从而形成金属线。

公开(公告)号：US06544885B1

公开(公告)日：2003-04-08

申请号：US09706498

申请日：2000-11-03

申请人： Khanh B. Nguyen ,  Harry J. Levinson ,  Christopher F. Lyons ,  Scott A. Bell ,  Fei Wang ,  Chih Yuh Yang

发明人： Khanh B. Nguyen ,  Harry J. Levinson ,  Christopher F. Lyons ,  Scott A. Bell ,  Fei Wang ,  Chih Yuh Yang

IPC分类号： H01L2358

CPC分类号： H01L21/76895 ,  H01L21/32139 ,  H01L2924/0002 ,  Y10S438/95 ,  H01L2924/00

摘要： A method of forming a conductor pattern on a base with uneven topography includes placing conductor material on the base, placing a hard mask material on the conductor material, planarizing an exposed surface of the hard mask material, and placing a layer of resist on the hard mask material. The resist is patterned and the patterned resist is used in selectively etching the hard mask material, with the hard mask material used in selectively etching the underlying conductor material. By planarizing the hard mask material prior to placing a layer of resist thereupon, uniformity of the resist coating is enhanced and depth of focus problems in exposing the resist are reduced.

摘要翻译： 在具有不平坦的地形的基底上形成导体图案的方法包括将导体材料放置在基底上，将硬掩模材料放置在导体材料上，平坦化硬掩模材料的暴露表面，以及将一层抗蚀剂放置在硬 面具材料。 抗蚀剂被图案化，并且图案化的抗蚀剂用于选择性地蚀刻硬掩模材料，其中硬掩模材料用于选择性蚀刻下面的导体材料。 通过在放置一层抗蚀剂之前对硬掩模材料进行平面化，抗蚀剂涂层的均匀性得到提高，并且降低了曝光抗蚀剂的焦点深度问题。

公开(公告)号：US06306560B1

公开(公告)日：2001-10-23

申请号：US09204630

申请日：1998-12-02

申请人： Fei Wang ,  Christopher F. Lyons ,  Khanh B. Nguyen ,  Scott A. Bell ,  Harry J. Levinson ,  Chih Yuh Yang

发明人： Fei Wang ,  Christopher F. Lyons ,  Khanh B. Nguyen ,  Scott A. Bell ,  Harry J. Levinson ,  Chih Yuh Yang

IPC分类号： G03C500

CPC分类号： H01L21/31144 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/32139

摘要： In one embodiment, the present invention relates to a method of forming a metal line, involving the steps of providing a semiconductor substrate comprising a metal layer, an oxide layer over the metal layer, and a silicon oxynitride layer over the oxide layer; depositing an ultra-thin photoresist over the silicon oxynitride layer, the ultra-thin photoresist having a thickness less than about 2,000 Å; irradiating the ultra-thin photoresist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin photoresist exposing a portion of the silicon oxynitride layer; etching the exposed portion of the silicon oxynitride layer exposing a portion of the oxide layer; etching the exposed portion of the oxide layer exposing a portion of the metal layer; and etching the exposed portion of the metal layer thereby forming the metal line.

摘要翻译： 在一个实施例中，本发明涉及一种形成金属线的方法，包括以下步骤：在氧化物层上方提供包括金属层，金属层上的氧化物层和氧氮化硅层的半导体衬底; 在所述氮氧化硅层上沉积超薄光致抗蚀剂，所述超薄光致抗蚀剂具有小于约的厚度; 用波长约250nm或更小的电磁辐射照射超薄光致抗蚀剂; 显影暴露一部分氮氧化硅层的超薄光刻胶; 蚀刻暴露氧化物层的一部分的氧氮化硅层的暴露部分; 蚀刻暴露出金属层的一部分的氧化物层的暴露部分; 并且蚀刻金属层的暴露部分从而形成金属线。

公开(公告)号：US6162587A

公开(公告)日：2000-12-19

申请号：US203450

申请日：1998-12-01

申请人： Chih Yuh Yang ,  Christopher F. Lyons ,  Harry J. Levinson ,  Khanh B. Nguyen ,  Fei Wang ,  Scott A. Bell

发明人： Chih Yuh Yang ,  Christopher F. Lyons ,  Harry J. Levinson ,  Khanh B. Nguyen ,  Fei Wang ,  Scott A. Bell

IPC分类号： H01L21/027 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/768 ,  G03C5/00

CPC分类号： H01L21/76816 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/32139

摘要： A method of forming a via structure is provided. In the method, a dielectric layer is formed on an anti-reflective coating (ARC) layer covering a first metal layer; and a transition metal layer is formed on the dielectric layer. An ultra-thin photoresist layer is formed on the transition metal layer, and the ultra-thin photoresist layer is patterned with short wavelength radiation to define a pattern for a via. The patterned ultra-thin photoresist layer is used as a mask during a first etch step to transfer the via pattern to the transition metal layer. The first etch step includes an etch chemistry that is selective to the transition metal layer over the ultra-thin photoresist layer and the dielectric layer. The transition metal layer is employed as a hard mask during a second etch step to form a contact hole corresponding to the via pattern by etching portions of the dielectric layer.

公开(公告)号：US6140023A

公开(公告)日：2000-10-31

申请号：US203447

申请日：1998-12-01

申请人： Harry J. Levinson ,  Scott A. Bell ,  Christopher F. Lyons ,  Khanh B. Nguyen ,  Fei Wang ,  Chih Yuh Yang

发明人： Harry J. Levinson ,  Scott A. Bell ,  Christopher F. Lyons ,  Khanh B. Nguyen ,  Fei Wang ,  Chih Yuh Yang

IPC分类号： G03F7/075 ,  G03F7/40 ,  G03F9/00

CPC分类号： G03F7/405 ,  G03F7/075 ,  G03F7/40

摘要： A lithographic process for fabricating sub-micron features is provided. A silicon containing ultra-thin photoresist is formed on an underlayer surface to be etched. The ultra-thin photoresist layer is patterned with short wavelength radiation to define a pattern. The ultra-thin photoresist is oxidized so as to convert the silicon therein to silicon dioxide. The oxidized ultra-thin photoresist layer is used as a hard mask during an etch step to transfer the pattern to the underlayer. The etch step includes an etch chemistry that is highly selective to the underlayer over the oxidized ultra-thin photoresist layer.

摘要翻译： 提供了用于制造亚微米特征的光刻工艺。 在要蚀刻的底层表面上形成含硅的超薄光致抗蚀剂。 用短波长辐射图案化超薄光致抗蚀剂层以限定图案。 超薄光致抗蚀剂被氧化以将其中的硅转化为二氧化硅。 氧化的超薄光致抗蚀剂层在蚀刻步骤期间用作硬掩模以将图案转印到底层。 蚀刻步骤包括对氧化的超薄光致抗蚀剂层上的底层具有高选择性的蚀刻化学品。