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231 条记录 (耗时 0.029 秒)

    Data retention of ferroelectric films by controlling film composition and strain gradient for probe-based devices
    31.
    发明授权
    Data retention of ferroelectric films by controlling film composition and strain gradient for probe-based devices 有权
    通过控制基于探针的器件的膜组成和应变梯度来数据保留铁电体膜

    公开(公告)号：US08644050B2

    公开(公告)日：2014-02-04

    申请号：US12420717

    申请日：2009-04-08

    申请人： Li-Peng Wang ,  Qing Ma ,  Valluri Rao

    发明人： Li-Peng Wang ,  Qing Ma ,  Valluri Rao

    IPC分类号： G11C11/22

    CPC分类号： G11B9/02 ,  G11B9/04

    摘要： For a probe based data storage (PDS) device a ferroelectric film stack may be used as a media to store data bits by polarizing areas of the film as either an up domain or a down domain to represent bits. However a built-in-bias field (BBF) may create domain retention problems. By growing the ferroelectric films with stress and composition gradients this may generate polarization gradients which reduce the bias field. Thus, the retention (or imprint) may be improved with minimized BBF.

    摘要翻译： 对于基于探针的数据存储（PDS）设备，可以使用铁电膜堆叠作为媒体以通过将胶片的区域偏置为向上域或向下域来表示位来存储数据位。 然而，内置偏置字段（BBF）可能会创建域保留问题。 通过生长具有应力和成分梯度的铁电薄膜，这可能产生减小偏压场的偏振梯度。 因此，可以通过最小化BBF来改善保留（或印记）。

    ARRANGEMENT AND METHOD TO PERFORM SCANNING READOUT OF FERROELECTRIC BIT CHARGES
    32.
    发明申请
    ARRANGEMENT AND METHOD TO PERFORM SCANNING READOUT OF FERROELECTRIC BIT CHARGES 审中-公开
    执行扫描电容读取的布置和方法

    公开(公告)号：US20130003521A1

    公开(公告)日：2013-01-03

    申请号：US13608878

    申请日：2012-09-10

    申请人： Quan Anh Tran ,  Byong M. Kim ,  Robert N. Stark ,  Nathan R. Franklin ,  Qing Ma ,  Valluri Rao ,  Donald E. Adams ,  Li-Peng Wang ,  Yevgeny V. Anoikin

    发明人： Quan Anh Tran ,  Byong M. Kim ,  Robert N. Stark ,  Nathan R. Franklin ,  Qing Ma ,  Valluri Rao ,  Donald E. Adams ,  Li-Peng Wang ,  Yevgeny V. Anoikin

    IPC分类号： G11B9/02

    CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

    摘要： An arrangement, a method and a system to read information stored in a layer of ferroelectric media. The arrangement includes a layer including a ferroelectric media having one or more ferroelectric domains holding bit charges, a domain corresponding to information; a probe having a tip, wherein the media and the tip are adapted to move relative to one another such that the tip scans the ferroelectric domains of the media while applying a contact force to the domains to generate a direct piezoelectric effect within the domains; and circuitry coupled to the tip and adapted to generate a signal in response to an electrical coupling between the tip and the domains while scanning the tip in contact with the domains, the signal corresponding to a readout signal for ferroelectric bit charges stored in the media

    摘要翻译： 读取存储在铁电介质层中的信息的布置，方法和系统。 该布置包括具有一个或多个保持位电荷的铁电畴的铁电介质的层，对应于信息的畴; 具有尖端的探针，其中介质和尖端适于相对于彼此移动，使得尖端扫描介质的铁电畴，同时向畴施加接触力以在畴内产生直接压电效应; 以及耦合到所述尖端并且适于响应于所述尖端和所述域之间的电耦合而产生信号的电路，同时扫描与所述区域接触的尖端，所述信号对应于存储在所述介质中的铁电位电荷的读出信号

    FERROELECTRIC LAYER WITH DOMAINS STABILIZED BY STRAIN
    34.
    发明申请
    FERROELECTRIC LAYER WITH DOMAINS STABILIZED BY STRAIN 有权
    具有由应变稳定的域的电介质层

    公开(公告)号：US20090155931A1

    公开(公告)日：2009-06-18

    申请号：US11958826

    申请日：2007-12-18

    申请人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    发明人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    IPC分类号： H01L21/00

    CPC分类号： G11B9/02 ,  C30B23/02 ,  C30B25/02 ,  C30B29/32 ,  H01L21/28291

    摘要： The present invention describes a method including: providing a substrate; forming an underlying layer over the substrate; heating the substrate; forming a ferroelectric layer over the underlying layer, the ferroelectric layer having a thickness below a critical thickness, the underlying layer having a smaller lattice constant than the ferroelectric layer; cooling the substrate to room temperature; and inducing a compressive strain in the ferroelectric layer.

    摘要翻译： 本发明描述了一种方法，包括：提供衬底; 在衬底上形成下层; 加热基板; 在所述下层上形成铁电层，所述铁电层的厚度低于临界厚度，所述下层具有比所述铁电层更小的晶格常数; 将基板冷却至室温; 并在铁电层中产生压应变。

    Silicon micromachined ultra-sensitive vibration spectrum sensor array (VSSA)
    35.
    发明申请
    Silicon micromachined ultra-sensitive vibration spectrum sensor array (VSSA) 失效

    公开(公告)号：US20060219016A1

    公开(公告)日：2006-10-05

    申请号：US11097059

    申请日：2005-03-31

    申请人： Li-Peng Wang ,  Qing Ma ,  Valluri Rao ,  Goutam Paul

    发明人： Li-Peng Wang ,  Qing Ma ,  Valluri Rao ,  Goutam Paul

    IPC分类号： G01P15/02

    CPC分类号： G01H1/00

    摘要： An apparatus comprising a substrate and an array of vibration sensors formed on the substrate, the array comprising two or more vibration sensors, wherein each vibration sensor in the array has a different noise floor and a different operational frequency range than any of the other vibration sensors in the array. A process comprising forming an array of vibration sensors on a substrate, the array comprising two or more vibration sensors, wherein each of the two or more vibration sensors in the array has a different noise floor and a different operational frequency range than any of the other vibration sensors in the array. Other embodiments are disclosed and claimed.

    Film bulk acoustic resonator structure and method of making
    37.
    发明申请
    Film bulk acoustic resonator structure and method of making 有权
    薄膜体声共振器结构及制作方法

    公开(公告)号：US20050030128A1

    公开(公告)日：2005-02-10

    申请号：US10942147

    申请日：2004-09-16

    申请人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    发明人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    IPC分类号： H03H3/02 ,  H03H9/17 ,  H03H9/58 ,  H03H9/00 ,  H04R17/00 ,  H04R25/00

    CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/586 ,  Y10T29/42

    摘要： A film bulk acoustic resonator is formed on a substrate having a major surface. The film bulk acoustic resonator includes an elongated stack. The elongated stack includes a layer of piezoelectric material positioned between a first conductive layer deposited on a first surface of the layer of piezoelectric material, and a second conductive layer deposited on a second surface of the layer of piezoelectric material. The elongated stack is positioned substantially perpendicular with respect to the major surface of the substrate. The first and second conductive layers are placed on the layer of piezoelectric material substantially simultaneously and in one processing step. The major surface of the substrate is in a horizontal plane and the stack of the film bulk acoustic resonator is in a substantially vertical plane. The resonator structure formed may be used either as a resonator or a filter.

    摘要翻译： 在具有主表面的基板上形成膜体声波谐振器。 薄膜体声波谐振器包括细长的叠层。 细长堆叠包括一层位于压电材料层的第一表面上的第一导电层和沉积在该压电材料层的第二表面上的第二导电层之间的压电材料。 细长的堆叠被定位成相对于基底的主表面基本垂直。 第一和第二导电层基本上同时并在一个处理步骤中放置在压电材料层上。 衬底的主表面处于水平面，膜体声波谐振器的堆叠处于基本垂直的平面。 形成的谐振器结构可以用作谐振器或滤波器。

    Film bulk acoustic resonator structure and method of making
    38.
    发明授权
    Film bulk acoustic resonator structure and method of making 失效
    薄膜体声共振器结构及制作方法

    公开(公告)号：US06822535B2

    公开(公告)日：2004-11-23

    申请号：US10109811

    申请日：2002-03-28

    申请人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    发明人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    IPC分类号： H03H302

    CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/586 ,  Y10T29/42

    摘要： A film bulk acoustic resonator is formed on a substrate having a major surface. The film bulk acoustic resonator includes an elongated stack. The elongated stack includes a layer of piezoelectric material positioned between a first conductive layer deposited on a first surface of the layer of piezoelectric material, and a second conductive layer deposited on a second surface of the layer of piezoelectric material. The elongated stack is positioned substantially perpendicular with respect to the major surface of the substrate. The first and second conductive layers are placed on the layer of piezoelectric material substantially simultaneously and in one processing step. The major surface of the substrate is in a horizontal plane and the stack of the film bulk acoustic resonator is in a substantially vertical plane. The resonator structure formed may be used either as a resonator or a filter.

    摘要翻译： 在具有主表面的基板上形成膜体声波谐振器。 薄膜体声波谐振器包括细长的叠层。 细长堆叠包括一层位于压电材料层的第一表面上的第一导电层和沉积在该压电材料层的第二表面上的第二导电层之间的压电材料。 细长的堆叠被定位成相对于基底的主表面基本垂直。 第一和第二导电层基本上同时并在一个处理步骤中放置在压电材料层上。 衬底的主表面处于水平面，膜体声波谐振器的堆叠处于基本垂直的平面。 形成的谐振器结构可以用作谐振器或滤波器。

    Forming film bulk acoustic resonator filters
    39.
    发明授权
    Forming film bulk acoustic resonator filters 有权
    形成膜体声波谐振器滤波器

    公开(公告)号：US06816035B2

    公开(公告)日：2004-11-09

    申请号：US10214493

    申请日：2002-08-08

    申请人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    发明人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    IPC分类号： H03H900

    CPC分类号： H03H9/174 ,  H03H3/02 ,  H03H2003/023 ,  Y10T29/42

    摘要： A film bulk acoustic resonator may be formed with a piezoelectric film having improved quality. The piezoelectric film may be deposited directly onto a single crystal silicon substrate. That substrate may be removed and selectively replaced with a lower electrode to form the film bulk acoustic resonator.

    摘要翻译： 膜体声波谐振器可以形成为具有改进质量的压电膜。 压电膜可以直接沉积在单晶硅衬底上。 可以去除该衬底并且用下电极选择性地替换以形成膜体声波谐振器。