利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

91 条记录 (耗时 0.041 秒)

    Arrangement and method to perform scanning readout of ferroelectric bit charges
    1.
    发明授权
    Arrangement and method to perform scanning readout of ferroelectric bit charges 有权
    执行铁电位电荷的扫描读出的布置和方法

    公开(公告)号：US08264941B2

    公开(公告)日：2012-09-11

    申请号：US11964580

    申请日：2007-12-26

    申请人： Quan Anh Tran ,  Byong M. Kim ,  Robert N. Stark ,  Nathan R. Franklin ,  Qing Ma ,  Valluri Rao ,  Donald E. Adams ,  Li-Peng Wang ,  Yevgeny V. Anoikin

    发明人： Quan Anh Tran ,  Byong M. Kim ,  Robert N. Stark ,  Nathan R. Franklin ,  Qing Ma ,  Valluri Rao ,  Donald E. Adams ,  Li-Peng Wang ,  Yevgeny V. Anoikin

    IPC分类号： G11B9/02

    CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

    摘要： An arrangement, a method and a system to read information stored in a layer of ferroelectric media. The arrangement includes a layer including a ferroelectric media having one or more ferroelectric domains holding bit charges, a domain corresponding to information; a probe having a tip, wherein the media and the tip are adapted to move relative to one another such that the tip scans the ferroelectric domains of the media while applying a contact force to the domains to generate a direct piezoelectric effect within the domains; and circuitry coupled to the tip and adapted to generate a signal in response to an electrical coupling between the tip and the domains while scanning the tip in contact with the domains, the signal corresponding to a readout signal for ferroelectric bit charges stored in the media.

    摘要翻译： 读取存储在铁电介质层中的信息的布置，方法和系统。 该布置包括具有一个或多个保持位电荷的铁电畴的铁电介质的层，对应于信息的畴; 具有尖端的探针，其中介质和尖端适于相对于彼此移动，使得尖端扫描介质的铁电畴，同时向畴施加接触力以在畴内产生直接压电效应; 以及耦合到所述尖端并且适于响应于所述尖端和所述域之间的电耦合而产生信号的电路，同时扫描与所述区域接触的尖端，所述信号对应于存储在所述介质中的铁电位电荷的读出信号。

    ARRANGEMENT AND METHOD TO PERFORM SCANNING READOUT OF FERROELECTRIC BIT CHARGES
    2.
    发明申请
    ARRANGEMENT AND METHOD TO PERFORM SCANNING READOUT OF FERROELECTRIC BIT CHARGES 审中-公开
    执行扫描电容读取的布置和方法

    公开(公告)号：US20130003521A1

    公开(公告)日：2013-01-03

    申请号：US13608878

    申请日：2012-09-10

    申请人： Quan Anh Tran ,  Byong M. Kim ,  Robert N. Stark ,  Nathan R. Franklin ,  Qing Ma ,  Valluri Rao ,  Donald E. Adams ,  Li-Peng Wang ,  Yevgeny V. Anoikin

    发明人： Quan Anh Tran ,  Byong M. Kim ,  Robert N. Stark ,  Nathan R. Franklin ,  Qing Ma ,  Valluri Rao ,  Donald E. Adams ,  Li-Peng Wang ,  Yevgeny V. Anoikin

    IPC分类号： G11B9/02

    CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

    摘要： An arrangement, a method and a system to read information stored in a layer of ferroelectric media. The arrangement includes a layer including a ferroelectric media having one or more ferroelectric domains holding bit charges, a domain corresponding to information; a probe having a tip, wherein the media and the tip are adapted to move relative to one another such that the tip scans the ferroelectric domains of the media while applying a contact force to the domains to generate a direct piezoelectric effect within the domains; and circuitry coupled to the tip and adapted to generate a signal in response to an electrical coupling between the tip and the domains while scanning the tip in contact with the domains, the signal corresponding to a readout signal for ferroelectric bit charges stored in the media

    摘要翻译： 读取存储在铁电介质层中的信息的布置，方法和系统。 该布置包括具有一个或多个保持位电荷的铁电畴的铁电介质的层，对应于信息的畴; 具有尖端的探针，其中介质和尖端适于相对于彼此移动，使得尖端扫描介质的铁电畴，同时向畴施加接触力以在畴内产生直接压电效应; 以及耦合到所述尖端并且适于响应于所述尖端和所述域之间的电耦合而产生信号的电路，同时扫描与所述区域接触的尖端，所述信号对应于存储在所述介质中的铁电位电荷的读出信号

    Arrangement and Method to Perform Scanning Readout of Ferroelectric Bit Charges
    3.
    发明申请
    Arrangement and Method to Perform Scanning Readout of Ferroelectric Bit Charges 有权
    执行铁电位电荷扫描读取的布置和方法

    公开(公告)号：US20090168637A1

    公开(公告)日：2009-07-02

    申请号：US11964580

    申请日：2007-12-26

    申请人： Quan Anh Tran ,  Byong M. Kim ,  Robert N. Stark ,  Nathan R. Franklin ,  Qing Ma ,  Valluri Rao ,  Donald E. Adams ,  Li-Peng Wang ,  Yevgeny V. Anoikin

    发明人： Quan Anh Tran ,  Byong M. Kim ,  Robert N. Stark ,  Nathan R. Franklin ,  Qing Ma ,  Valluri Rao ,  Donald E. Adams ,  Li-Peng Wang ,  Yevgeny V. Anoikin

    IPC分类号： G11B3/00

    CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

    摘要： An arrangement, a method and a system to read information stored in a layer of ferroelectric media. The arrangement includes a layer including a ferroelectric media having one or more ferroelectric domains holding bit charges, a domain corresponding to information; a probe having a tip, wherein the media and the tip are adapted to move relative to one another such that the tip scans the ferroelectric domains of the media while applying a contact force to the domains to generate a direct piezoelectric effect within the domains; and circuitry coupled to the tip and adapted to generate a signal in response to an electrical coupling between the tip and the domains while scanning the tip in contact with the domains, the signal corresponding to a readout signal for ferroelectric bit charges stored in the media

    摘要翻译： 读取存储在铁电介质层中的信息的布置，方法和系统。 该布置包括具有一个或多个保持位电荷的铁电畴的铁电介质的层，对应于信息的畴; 具有尖端的探针，其中介质和尖端适于相对于彼此移动，使得尖端扫描介质的铁电畴，同时向畴施加接触力以在畴内产生直接压电效应; 以及耦合到所述尖端并且适于响应于所述尖端和所述域之间的电耦合而产生信号的电路，同时扫描与所述区域接触的尖端，所述信号对应于存储在所述介质中的铁电位电荷的读出信号

    Frequency tuning of film bulk acoustic resonators (FBAR)
    7.
    发明申请
    Frequency tuning of film bulk acoustic resonators (FBAR) 审中-公开
    薄膜体声共振器（FBAR）的频率调谐

    公开(公告)号：US20070139140A1

    公开(公告)日：2007-06-21

    申请号：US11314361

    申请日：2005-12-20

    申请人： Valluri Rao ,  Theodore Doros ,  Qing Ma ,  Krishna Seshan ,  Li-Peng Wang

    发明人： Valluri Rao ,  Theodore Doros ,  Qing Ma ,  Krishna Seshan ,  Li-Peng Wang

    IPC分类号： H03H9/58

    CPC分类号： H03H3/04 ,  H03H3/0076 ,  H03H2003/0428 ,  H03H2003/0478

    摘要： Multiple FBARs may be manufactured on a single wafer and later diced. Ideally, all devices formed in a wafer would have the same resonance frequency. However, due to manufacturing variances, the frequency response of the FBAR devices may vary slightly across the wafer. An RF map may be created to determine zones over the wafer where FBARs in that zone all vary from a target frequency by a similar degree. A tuning layer may be deposited over the wafer. Lithographically patterned features to the tuning layer based on the zones identified by the RF map may be used to correct the FBARs to a target resonance frequency with the FBARs still intact on the wafer.

    摘要翻译： 多个FBAR可以在单个晶片上制造并且稍后被切割。 理想地，形成在晶片中的所有器件将具有相同的谐振频率。 然而，由于制造方差，FBAR器件的频率响应可能会在晶圆上略有不同。 可以创建RF映射以确定晶片上的区域，其中该区域中的FBAR全部从目标频率变化相似程度。 调谐层可以沉积在晶片上。 可以使用基于由RF映射表示的区域的调谐层的光刻图案特征来将FBAR校正到目标谐振频率，同时FBAR在晶片上仍然完整。