Lithographic apparatus comprising a cleaning arrangement, cleaning arrangement and method for cleaning a surface to be cleaned
    32.
    发明申请
    Lithographic apparatus comprising a cleaning arrangement, cleaning arrangement and method for cleaning a surface to be cleaned 失效
    光刻设备包括清洁装置,清洁装置和清洁待清洁表面的方法

    公开(公告)号:US20080001101A1

    公开(公告)日:2008-01-03

    申请号:US11478303

    申请日:2006-06-30

    IPC分类号: G03F7/20

    CPC分类号: G03F7/70925 B08B7/00

    摘要: A cleaning arrangement is provided for use in an EUV lithographic apparatus, for example an EUV lithographic apparatus with a Sn source. The cleaning arrangement includes a gas source for a hydrogen containing gas and a hydrogen radical source. The hydrogen radical source is a source of (UV) radiation which induces photo dissociation of the hydrogen. Radicals may reduce Sn oxides (if present) and my form volatile hydrides of Sn deposition and/or carbon deposition. In this way the cleaning arrangement can be used to clean optical elements from Sn and/or C deposition. The EUV source may be used as hydrogen radical source. An optical filter is used to remove undesired EUV radiation and transmit desired UV radiation.

    摘要翻译: 提供了用于EUV光刻设备(例如具有Sn源的EUV光刻设备)的清洁装置。 清洁装置包括用于含氢气体和氢根源的气体源。 氢自由基源是(UV)辐射源,其诱导氢的光解离。 自由基可以减少Sn氧化物(如果存在)和形成Sn沉积和/或碳沉积的挥发性氢化物。 以这种方式,清洁装置可用于从Sn和/或C沉积物清洁光学元件。 EUV源可以用作氢源。 使用滤光器去除不期望的EUV辐射并传输所需的UV辐射。

    Debris mitigation system and lithographic apparatus
    36.
    发明授权
    Debris mitigation system and lithographic apparatus 失效
    碎片缓解系统和光刻设备

    公开(公告)号:US08071963B2

    公开(公告)日:2011-12-06

    申请号:US11645809

    申请日:2006-12-27

    IPC分类号: G21G5/00

    摘要: A debris mitigation system for trapping contaminant material coming from a debris-generating radiation source. The system includes a contamination barrier constructed and arranged to rotate about an axis, and a magnet structure constructed and arranged to provide a magnetic field for deflecting charged debris from the radiation source. The magnet structure is constructed and arranged to provide a magnetic field through the contamination barrier. The magnetic field, when passing through the contamination barrier, is oriented along planes generally coinciding with the axis of rotation of the contamination barrier.

    摘要翻译: 用于捕集来自碎屑产生辐射源的污染物质的碎片缓解系统。 该系统包括构造和布置成围绕轴线旋转的污染屏障,以及构造和布置成提供用于使来自辐射源的带电碎片偏转的磁场的磁体结构。 磁体结构被构造和布置成通过污染屏障提供磁场。 当通过污染屏障时,磁场沿着通常与污染屏障旋转轴线重合的平面定向。

    Anti-reflection coating for an EUV mask
    37.
    发明授权
    Anti-reflection coating for an EUV mask 有权
    防反射涂层用于EUV面罩

    公开(公告)号:US07736820B2

    公开(公告)日:2010-06-15

    申请号:US11418465

    申请日:2006-05-05

    IPC分类号: G03F1/00

    摘要: An EUV mask includes, on top of a multi-layer mirror, a spectral purity enhancement layer, for application in an EUV lithographic apparatus. On top of the spectral purity enhancement layer, a patterned absorber layer is provided. The spectral purity enhancement layer includes a first spectral purity enhancement layer, but between the multi-layer mirror and first spectral purity enhancement layer there may be an intermediate layer or a second spectral purity enhancement layer and intermediate layer. The patterned absorber layer may also itself function as an anti-reflection (AR) coating. The AR effect of this absorber layer is a function of the aperture sizes in the pattern. The spectral purity of a mask may be enhanced, such that DUV radiation is diminished relatively stronger than EUV radiation.

    摘要翻译: EUV掩模在多层反射镜之上包括光谱纯度增强层,用于EUV光刻设备中。 在光谱纯度增强层的顶部,提供了图案化的吸收层。 光谱纯度增强层包括第一光谱纯度增强层,但是在多层反射镜和第一光谱纯度增强层之间,可以存在中间层或第二光谱纯度增强层和中间层。 图案化的吸收层本身也可以用作抗反射(AR)涂层。 该吸收层的AR效应是图案中孔径尺寸的函数。 可以增强掩模的光谱纯度,使得DUV辐射比EUV辐射相对更强。