THIN FILM TRANSISTOR AND DISPLAY DEVICE
    32.
    发明申请
    THIN FILM TRANSISTOR AND DISPLAY DEVICE 有权
    薄膜晶体管和显示器件

    公开(公告)号:US20110180802A1

    公开(公告)日:2011-07-28

    申请号:US13122307

    申请日:2009-10-07

    IPC分类号: H01L33/00 H01L29/04

    摘要: Provided are a thin film transistor that is capable of suppressing desorption of oxygen and others from an oxide semiconductor layer, and reducing the time to be taken for film formation, and a display device provided therewith. A gate insulation film 22, a channel protection layer 24, and a passivation film 26 are each in the laminate configuration including a first layer 31 made of aluminum oxide, and a second layer 32 made of an insulation material including silicon (Si). The first and second layers 31 and 32 are disposed one on the other so that the first layer 31 comes on the side of an oxide semiconductor layer 23. The oxide semiconductor layer 23 is sandwiched on both sides by the first layers 31 made of aluminum oxide, thereby suppressing desorption of oxygen and others, and stabilizing the electrical characteristics of a TFT 20. Moreover, since the second layer 32 is made of an insulation material including silicon (Si), the time to be taken for film formation can be reduced compared with a single layer made of aluminum oxide.

    摘要翻译: 提供一种薄膜晶体管,其能够抑制氧等氧化物半导体层的解吸,并减少成膜时间,以及具有该显示装置的显示装置。 栅极绝缘膜22,沟道保护层24和钝化膜26均包括由氧化铝制成的第一层31和由包含硅(Si)的绝缘材料制成的第二层32。 第一层31和第二层32彼此重叠设置,使得第一层31位于氧化物半导体层23的侧面。氧化物半导体层23由两个由氧化铝制成的第一层31夹在两侧 ,从而抑制氧等的解吸,并且稳定TFT20的电特性。此外,由于第二层32由包​​含硅(Si)的绝缘材料制成,因此可以减少用于成膜的时间,比较 具有由氧化铝制成的单层。

    Operating system rebooting method and apparatus for continuing to execute a non-stop module even during rebooting
    33.
    发明授权
    Operating system rebooting method and apparatus for continuing to execute a non-stop module even during rebooting 失效
    操作系统重新启动方法和装置,即使在重新启动时也可继续执行不间断模块

    公开(公告)号:US07765395B2

    公开(公告)日:2010-07-27

    申请号:US12107651

    申请日:2008-04-22

    IPC分类号: G06F9/00

    摘要: A method of rebooting an operating system including a plurality of load modules in a single computer. One load module which is to be operated during rebooting of the operating system is held in a memory, while establishing a state capable of accepting interrupt to be processed by the one load module. All the other load modules are loaded in a memory of the computer. Processing of the interrupt can be executed by the one load module even during the rebooting of the operating system.

    摘要翻译: 一种在单个计算机中重新启动包括多个加载模块的操作系统的方法。 在重新启动操作系统期间要操作的一个加载模块被保存在存储器中,同时建立能够接受要由一个加载模块处理的中断的状态。 所有其他加载模块都加载到计算机的内存中。 即使在重新启动操作系统时,也可以由一个加载模块执行中断处理。

    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE
    34.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE 有权
    薄膜晶体管基板和显示器件

    公开(公告)号:US20100109004A1

    公开(公告)日:2010-05-06

    申请号:US12607190

    申请日:2009-10-28

    申请人: Toshiaki Arai

    发明人: Toshiaki Arai

    IPC分类号: H01L33/00 H01L29/786

    摘要: The present invention provides a thin film transistor substrate realizing reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate. The thin film transistor substrate includes: a substrate; a thin film transistor having, over the substrate, a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source-drain electrode in order; and a capacitor having, over the substrate, a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order.

    摘要翻译: 本发明提供了一种实现电容器中的层间短路缺陷减少的薄膜晶体管基板,以及具有该薄膜晶体管基板的显示装置。 薄膜晶体管基板包括:基板; 薄膜晶体管,其依次是在栅极电极,栅极绝缘膜,氧化物半导体层和源极 - 漏极电极之上; 以及在该基板上依次具有由氧化物半导体构成的底部电极,电容绝缘膜和顶部电极的电容器。

    SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND DISPLAY DEVICE
    36.
    发明申请
    SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND DISPLAY DEVICE 失效
    半导体器件制造方法和显示器件

    公开(公告)号:US20080258154A1

    公开(公告)日:2008-10-23

    申请号:US12101574

    申请日:2008-04-11

    申请人: Toshiaki Arai

    发明人: Toshiaki Arai

    IPC分类号: H01L33/00 H01L21/00

    摘要: Disclosed herein is a semiconductor device manufacturing method for performing an annealing process of irradiating a semiconductor film on which element forming areas including thin film transistor forming areas are arranged in a two-dimensional pattern with energy beams using a plurality of irradiating optical systems, wherein in the annealing process, an area irradiated with the energy beams is divided into a single beam irradiated area irradiated by each of the plurality of irradiating optical systems with an energy beam singly and a boundary area situated between single beam irradiated areas adjacent to each other and irradiated by both of two irradiating optical systems performing beam irradiation of the single beam irradiated areas with energy beams.

    摘要翻译: 本发明公开了一种半导体器件制造方法,用于对使用多个照射光学系统的能量束以二维图案排列有薄膜晶体管形成区域的元件形成区域的半导体膜进行退火处理,其中, 退火处理中,用能量束照射的区域被分割为单个照射光学系统中的每一个被照射的单个光束照射区域,单个能量束和位于彼此相邻并且被照射的单个束照射区域之间的边界区域 通过两个照射光学系统通过能量束执行单光束照射区域的光束照射。

    In-plane switching liquid crystal display and liquid crystal display cell comprising a groove formed above the data line
    37.
    发明授权
    In-plane switching liquid crystal display and liquid crystal display cell comprising a groove formed above the data line 有权
    面内切换液晶显示器和液晶显示单元,其包括形成在数据线上方的凹槽

    公开(公告)号:US07339644B2

    公开(公告)日:2008-03-04

    申请号:US10732489

    申请日:2003-12-11

    IPC分类号: G02F1/1343 G02F1/1333

    摘要: An array substrate, a gate insulating layer, and a data line are deposited sequentially on a liquid crystal cell. At a part of this configuration, a planarizing layer covers the gate insulating layer and the data line. The planarizing layer has a groove formed right above the data line. A common electrode is formed on internal walls of the groove and on the flat surface of the planarizing layer corresponding to the shoulders of the groove. A pixel electrode is formed on the flat surface with a certain distance from the common electrode.

    摘要翻译: 阵列基板,栅极绝缘层和数据线依次沉积在液晶单元上。 在该配置的一部分,平坦化层覆盖栅极绝缘层和数据线。 平坦化层具有形成在数据线正上方的凹槽。 公共电极形成在凹槽的内壁上,平坦化层的与凹槽的肩部对应的平坦表面上。 在与公共电极有一定距离的平坦表面上形成像素电极。

    DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE
    38.
    发明申请
    DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE 有权
    用于制造显示装置的显示装置和方法

    公开(公告)号:US20070024787A1

    公开(公告)日:2007-02-01

    申请号:US11458873

    申请日:2006-07-20

    申请人: Toshiaki Arai

    发明人: Toshiaki Arai

    IPC分类号: G02F1/1343

    摘要: A display device and method for manufacturing same are provided. The display device including a plurality of unit pixels disposed in the matrix on a substrate, each of the unit pixels has a thin film transistor at a place other than the center of the pixel, and unit pixels in a first row and unit pixels in a second row adjacent to the first row are arranged so that they are symmetric with respect to a first virtual plane orthogonal to a main surface of the substrate.

    摘要翻译: 提供了一种显示装置及其制造方法。 该显示装置包括在基板上配置在矩阵中的多个单位像素,各单位像素在除了像素的中心以外的位置处具有薄膜晶体管,第一行中的单位像素和 相邻于第一行的第二行被布置成使得它们相对于与基板的主表面垂直的第一虚拟平面对称。

    Cruise control apparatus for vehicle
    39.
    发明申请
    Cruise control apparatus for vehicle 失效
    车辆巡航控制装置

    公开(公告)号:US20060100769A1

    公开(公告)日:2006-05-11

    申请号:US11217863

    申请日:2005-08-31

    IPC分类号: G06F7/00 B60T7/12

    摘要: In an adaptive cruise control (ACC) region where vehicle speed V is greater than a predetermined third vehicle speed #V3, a decrease amount of a target inter-vehicle distance per predetermined unit vehicle speed decrease amount in a state where the vehicle speed V is less than a predetermined fourth vehicle speed #V4 is smaller than a decrease amount of the target inter-vehicle distance per predetermined unit vehicle speed decrease amount in a state where the vehicle speed V is greater than the predetermined fourth vehicle speed #V4. The decrease amount of the target inter-vehicle distance per predetermined unit vehicle speed decrease amount in a state where the vehicle speed V is less than a predetermined first vehicle speed #V1 is larger than a decrease amount of the target inter-vehicle distance per predetermined unit vehicle speed decrease amount in a state where the vehicle speed V is greater than the predetermined first vehicle speed #V1 and less than a predetermined second vehicle speed #V2.

    摘要翻译: 在车速V大于预定的第三车速#V 3的自适应巡航控制(ACC)区域中,车速V 小于预定的第四车速#V 4小于在车速V大于预定的第四车速#V 4的状态下的每个预定单位车辆速度减小量的目标车辆间距离的减少量 。 在车速V小于预定的第一车辆速度#V 1的状态下,每个预定单位车辆速度减小量的目标车辆间距离的减少量大于目标车辆间距离的减少量 在车速V大于预定的第一车辆速度#V 1并且小于预定的第二车辆速度#V 2的状态下的预定单位车辆速度减小量。