摘要:
A flow rate sensor has a problem that a resistance value of a heat generating resistor itself varies and sensor characteristics are changed during use of the sensor for a long term. Also, the temperature of the heat generating resistor must be adjusted on a circuit substrate with a resistance constituting one side of a fixed temperature difference control circuit, and this has been one of factors pushing up the production cost. All resistances used for fixed temperature difference control are formed on the same substrate as temperature sensitive resistors of the same material. This enables all the resistances for the fixed temperature difference control to be exposed to the same environmental conditions. Hence, even when the resistances change over time, the changes over time occur substantially at the same tendency. Since the resistances for the fixed temperature difference control change over time essentially at the same rate, a resulting output error is very small.
摘要:
A flow rate sensor has a problem that a resistance value of a heat generating resistor itself varies and sensor characteristics are changed during use of the sensor for a long term. Also, the temperature of the heat generating resistor must be adjusted on a circuit substrate with a resistance constituting one side of a fixed temperature difference control circuit, and this has been one of factors pushing up the production cost. All resistances used for fixed temperature difference control are formed on the same substrate as temperature sensitive resistors of the same material. This enables all the resistances for the fixed temperature difference control to be exposed to the same environmental conditions. Hence, even when the resistances change over time, the changes over time occur substantially at the same tendency. Since the resistances for the fixed temperature difference control change over time essentially at the same rate, a resulting output error is very small.
摘要:
There is provided a flow rate measuring device which comprises a means for introducing a backward flow of the main passage into the sub-passage through the outlet of the sub-passage of the flow rate measuring device is provided near the outlet of the sub-passage, in order to keep the flow rate measuring element from being destroyed under the presence of dust and water in an intake manifold and which has high reliability for a long period of use and an excellent pulsation characteristic.
摘要:
It is an object of the present invention to provide a simple-structure physical quantity detecting device whose resistance does not vary irrespective of use for long periods, a method for manufacturing thereof and a motor vehicle control system using the physical quantity detecting sensor to improve its reliability. An airflow sensor (20) is equipped with a heat generating resistor (12H) and a temperature measuring resistor (12C), formed on a semiconductor substrate (11). The heat generating resistor (12H) is formed in a thin-wall portion (11A). Both end portions of the heat generating resistor (12H) are connected through first lead conductors (13H1, 13H2) to electrodes (14H1, 14H2), respectively. A second lead conductor (15H1) connected to the electrode (14H1) extends to an outer circumferential portion of the airflow sensor (10). A second lead conductor (15H2, 15H3) connected to the electrode (14H2) also extend to the outer circumferential portion of the airflow sensor (10), but a disconnection portion (16) is made in the middle thereof to establish electrical non-conduction.
摘要翻译:本发明的一个目的是提供一种简单结构的物理量检测装置,其电阻不会随着长时间的使用而变化,其制造方法和使用该物理量检测传感器的机动车辆控制系统来改善其 可靠性。 气流传感器(20)配备有形成在半导体衬底(11)上的发热电阻器(12H)和温度测量电阻器(12C)。 发热电阻器(12H)形成在薄壁部分(11A)中。 发热电阻器(12H)的两端分别通过第一引线导体(13H 1,13 H 2)连接到电极(14H 1,14 H 2)。 连接到电极(14H 1)的第二引线导体(15H 1)延伸到气流传感器(10)的外周部分。 连接到电极(14H 2)的第二引线导体(15H 2,15 H 3)也延伸到气流传感器(10)的外周部分,但是在其中间形成有断开部分(16) 建立电气非导通。
摘要:
A gas flowmeter capable of reducing a secular change comprises a silicon semiconductor substrate formed with a cavity and a heat element formed above the cavity of the semiconductor substrate by way of an insulating film. The heat element is a silicon (Si) semiconductor thin film impurity-doped at high concentration. Stoichiometrically stable silicon nitride (Si3N4) thin films as barrier layers which less permeate and less absorb hydrogen in the heat generating temperature range of the heat element are formed above and below the silicon (Si) semiconductor thin film.
摘要:
A flow rate sensor has a problem that a resistance value of a heat generating resistor itself varies and sensor characteristics are changed during use of the sensor for a long term. Also the temperature of the heat generating resistor must be adjusted on a circuit substrate with a resistance constituting one side of a fixed temperature difference control circuit, and this has been one of factors pushing up the production cost. All resistances used for fixed temperature difference control are formed on the same substrate as temperature sensitive resistors of the same material. This enables all the resistances for the fixed temperature difference control to be exposed to the same environmental conditions. Hence, even when the resistances change over time, the changes over time occur substantially at the same tendency. Since the resistances for the fixed temperature difference control change over time essentially at the same rate, a resulting output error is very small.
摘要:
A flow rate sensor has a problem that a resistance value of a heat generating resistor itself varies and sensor characteristics are changed during use of the sensor for a long term. Also, the temperature of the heat generating resistor must be adjusted on a circuit substrate with a resistance constituting one side of a fixed temperature difference control circuit, and this has been one of factors pushing up the production cost. All resistances used for fixed temperature difference control are formed on the same substrate as temperature sensitive resistors of the same material. This enables all the resistances for the fixed temperature difference control to be exposed to the same environmental conditions. Hence, even when the resistances change over time, the changes over time occur substantially at the same tendency. Since the resistances for the fixed temperature difference control change over time essentially at the same rate, a resulting output error is very small.
摘要:
A gas flowmeter capable of reducing a secular change comprises a silicon semiconductor substrate formed with a cavity and a heat element formed above the cavity of the semiconductor substrate by way of an insulating film. The heat element is a silicon (Si) semiconductor thin film impurity-doped at high concentration. Stoichiometrically stable silicon nitride (Si3N4) thin films as barrier layers which less permeate and less absorb hydrogen in the heat generating temperature range of the heat element are formed above and below the silicon (Si) semiconductor thin film.
摘要翻译:能够减少长期变化的气体流量计包括形成有空腔的硅半导体衬底和通过绝缘膜形成在半导体衬底的空腔上方的加热元件。 热元件是以高浓度杂质掺杂的硅(Si)半导体薄膜。 在上面形成作为在热元件的发热温度范围内较少渗透并且较少吸收氢的阻挡层的化学计量稳定的氮化硅(Si 3 N 4 N 4)薄膜, 在硅(Si)半导体薄膜之下。
摘要:
A flow rate sensor has a problem that a resistance value of a heat generating resistor itself varies and sensor characteristics are changed during use of the sensor for a long term. Also, the temperature of the heat generating resistor must be adjusted on a circuit substrate with a resistance constituting one side of a fixed temperature difference control circuit, and this has been one of factors pushing up the production cost. All resistances used for fixed temperature difference control are formed on the same substrate as temperature sensitive resistors of the same material. This enables all the resistances for the fixed temperature difference control to be exposed to the same environmental conditions. Hence, even when the resistances change over time, the changes over time occur substantially at the same tendency. Since the resistances for the fixed temperature difference control change over time essentially at the same rate, a resulting output error is very small.
摘要:
A thermal airflow sensor is made highly resistant to thermal stresses due to cold-heat cycles, highly reliable even in the presence of corrosive gases, and capable of low dispersion of output characteristics. The thermal airflow sensor has a semiconductor sensor element in a dent formed on a ceramic laminated board on which a control circuit and a metallic film are formed. The laminated board area at which the semiconductor sensor element is electrically connected to the laminated board is covered with epoxy resin. The part covered with epoxy resin is placed in the air passage.