公开(公告)号：US5985679A

公开(公告)日：1999-11-16

申请号：US874055

申请日：1997-06-12

申请人： Michael J. Berman

发明人： Michael J. Berman

IPC分类号： B24B37/013 ,  B24B49/12 ,  B24D7/12 ,  G01N1/32 ,  G01N21/55 ,  B24B49/00 ,  B24B14/12

CPC分类号： B24B37/013 ,  B24B49/12 ,  B24D7/12 ,  G01N21/55 ,  G01N1/32

摘要： An automated endpoint detection process includes obtaining a baseline graph of reflected radiation signal versus time of radiation exposure for a standard integrated circuit substrate surface that is substantially free of residual metal, directing radiation generated from a radiation source through a radiation transparent region of a polishing pad such that radiation is incident on at least a portion of a surface of the integrated circuit substrate, detecting a reflected radiation signal from the integrated circuit substrate surface through the radiation transparent region of the polishing pad, comparing an area under a graph of the reflected radiation signal versus time of radiation exposure obtained for the integrated circuit surface to the baseline graph of the standard integrated circuit substrate surface and thereby determining whether residual metal is present on the surface of the integrated circuit substrate and signaling the chemical-mechanical polishing assembly to stop polishing after polishing for a predetermined time, if the area under the graph of the reflected radiation signal versus time of radiation exposure obtained for the integrated circuit surface is substantially equal to the baseline graph of the standard integrated circuit substrate surface.

摘要翻译： 自动终点检测过程包括获得基本上不含剩余金属的标准集成电路衬底表面的反射辐射信号与辐射暴露时间的基线图，将辐射源产生的辐射引导通过抛光垫的辐射透明区域 使得辐射入射到集成电路衬底的表面的至少一部分上，通过抛光垫的辐射透射区域检测来自集成电路衬底表面的反射辐射信号，比较反射辐射的图形下的面积 信号与集成电路表面相对于标准集成电路衬底表面的基线图获得的辐射暴露时间，从而确定残余金属是否存在于集成电路衬底的表面上，并且指示化学机械抛光组件停止反射 如果针对集成电路表面获得的反射辐射信号与放射线暴露时间之间的图形下的面积基本上等于标准集成电路衬底表面的基线图，则在抛光一段预定时间后进行铰接。

公开(公告)号：US5893756A

公开(公告)日：1999-04-13

申请号：US918483

申请日：1997-08-26

申请人： Michael J. Berman ,  Jayashree Kalpathy-Cramer

发明人： Michael J. Berman ,  Jayashree Kalpathy-Cramer

IPC分类号： H01L21/02 ,  H01L21/321 ,  H01L21/00

CPC分类号： C23F11/122 ,  H01L21/02074 ,  H01L21/3212

摘要： A post metal chemical-mechanical polishing cleaning process that effectively inhibits corrosion of a metallic plug is described. The process includes providing a partially fabricated integrated circuit (IC) substrate having a metallic plug that is formed by subjecting a metallic surface on the integrated circuit (IC) substrate to chemical-mechanical polishing, which produces a contaminated dielectric layer containing metallic contaminants. The process also includes scrubbing the IC substrate surface in the presence of a mixture including ethylene glycol and hydrofluoric acid to remove at least a portion of the contaminated dielectric layer and to effectively inhibit corrosion of the metallic plug. The mixture has ethylene glycol in an amount that is between about 2 times and about 7 times the amount of hydrofluoric acid.

摘要翻译： 描述了有效地抑制金属塞的腐蚀的后金属化学机械抛光清洁工艺。 该方法包括提供具有金属插塞的部分制造的集成电路（IC）衬底，其通过对集成电路（IC）衬底上的金属表面进行化学机械抛光而形成，其产生包含金属污染物的污染的介电层。 该方法还包括在包含乙二醇和氢氟酸的混合物的存在下洗涤IC基板表面以去除至少一部分被污染的介电层并且有效地抑制金属塞的腐蚀。 该混合物的乙二醇的量为氢氟酸的约2倍至约7倍。

公开(公告)号：US07751609B1

公开(公告)日：2010-07-06

申请号：US09553140

申请日：2000-04-20

申请人： Michael J. Berman

发明人： Michael J. Berman

IPC分类号： G06K9/00

CPC分类号： H01L22/12 ,  B24B37/013 ,  B24B49/12 ,  H01L22/26

摘要： A method and apparatus is provided for determining thickness of films or layers during chemical-mechanical planarization/polishing (CMP) of a semiconductor substrate or wafer in situ. The method may be used to determine end-point during CMP especially of oxide films deposited on the substrate or wafer. In one embodiment, the method includes: a) capturing images of the surface of the substrate using high speed imaging; b) performing pattern recognition on the captured images; c) selecting one of the captured images based on the pattern recognition; and d) converting the selected image into a thickness measurement. In one form, the high speed imaging comprises a high speed camera, while in another form, the high speed imaging comprises a conventional camera and a laser pulse or flash tube. In yet another embodiment, reflective laser interference patterns of the substrate are captured and analyzed for interference pattern changes that can signal a practical end-point.

摘要翻译： 提供了一种方法和装置，用于在半导体衬底或晶片原位化学机械平面化/抛光（CMP）期间确定膜或层的厚度。 该方法可以用于确定CMP期间的终点，特别是在沉积在衬底或晶片上的氧化膜上。 在一个实施例中，该方法包括：a）使用高速成像技术拍摄基片表面的图像; b）对所捕获的图像执行模式识别; c）基于模式识别来选择所捕获的图像之一; 以及d）将所选择的图像转换成厚度测量。 在一种形式中，高速成像包括高速摄像机，而在另一种形式中，高速成像包括常规相机和激光脉冲或闪光管。 在另一个实施例中，捕获并分析了衬底的反射激光干涉图案，用于可以发出实际端点的干扰图案变化。

公开(公告)号：US07298458B2

公开(公告)日：2007-11-20

申请号：US11473627

申请日：2006-06-22

申请人： Michael J. Berman ,  George E. Bailey

发明人： Michael J. Berman ,  George E. Bailey

IPC分类号： G03B27/62 ,  G03B27/68

CPC分类号： G03F1/64 ,  G03F1/62 ,  G03F7/70308 ,  G03F7/70425 ,  G03F7/70783 ,  G03F7/70983

摘要： Provided are systems and methods for overcoming optical errors occurring from reticle and other hardware usage in a semiconductor fabrication apparatus. The systems and methods minimize optical errors, such as those resulting from gravitational sag on a reticle or mask, for a pattern being projected onto a wafer. The reduced errors allow larger reticles and masks to be used—while maintaining optical accuracy; and also improve optical budget management.

摘要翻译： 提供了用于克服半导体制造装置中的掩模版和其他硬件使用发生的光学误差的系统和方法。 系统和方法将光学误差最小化，例如由于在掩模版或掩模上引起的重力下垂引起的误差，用于将图案投影到晶片上。 减少的误差允许使用更大的掩模和掩模 - 同时保持光学精度; 并改善光预算管理。

公开(公告)号：US07135006B1

公开(公告)日：2006-11-14

申请号：US11047529

申请日：2005-02-01

申请人： James J. Weber ,  Michael J. Berman

发明人： James J. Weber ,  Michael J. Berman

IPC分类号： A61F5/00

CPC分类号： A61F5/0118

摘要： A positioner to control the position of a finger or thumb of the hand, comprising an elongated, flexible holder configured to extend along the upper side of the user's finger or thumb; a retainer carried by the holder to retain the tip of the user's finger or thumb, the holder adapted to be anchored, remotely from the retainer, endwise thereof; the holder configured to flex, thereby allowing bending of the finger or thumb, producing tensioning of the holder that resists such bending.

摘要翻译： 一种用于控制手指或拇指的位置的定位器，包括细长的柔性保持器，其构造成沿着使用者的手指或拇指的上侧延伸; 由保持器承载的保持器，用于保持使用者的手指或拇指的尖端，所述保持器适于被锚定，远离保持器，其端部; 所述保持器构造成弯曲，从而允许手指或拇指的弯曲，产生抵抗这种弯曲的保持器的张紧。

公开(公告)号：US07081037B2

公开(公告)日：2006-07-25

申请号：US10668021

申请日：2003-09-22

申请人： Michael J. Berman ,  Jan Fure

发明人： Michael J. Berman ,  Jan Fure

IPC分类号： B24B1/00

CPC分类号： B24B53/017 ,  B24B49/16

摘要： A method for inspecting the uniformity of the pressure applied between a conditioner and a polishing pad on a chemical mechanical polisher. A sheet of pressure sensitive material is placed between the conditioner and the polishing pad, and the conditioner is lowered onto the sheet of pressure sensitive material. A desired degree of pressure is applied between the conditioner and the polishing pad, thereby creating an impression in the sheet of pressure sensitive material, and the conditioner is lifted from the sheet of pressure sensitive material. The sheet of pressure sensitive material is inspected to determine the uniformity of the pressure applied between the conditioner and the polishing pad.

摘要翻译： 一种用于检查施加在化学机械抛光机上的调理剂和抛光垫之间的压力的均匀性的方法。 将一片压敏材料放置在调理剂和抛光垫之间，将调理剂降低到压敏材料片上。 在调理剂和抛光垫之间施加期望的压力，从而在压敏材料片材中产生印模，并且将调理剂从压敏材料片上提起。 检查压敏材料片材以确定调节剂和抛光垫之间施加的压力的均匀性。

公开(公告)号：US06885436B1

公开(公告)日：2005-04-26

申请号：US10243562

申请日：2002-09-13

申请人： Michael J. Berman ,  George E. Bailey

发明人： Michael J. Berman ,  George E. Bailey

IPC分类号： G03F1/14 ,  G03F7/20 ,  G03B27/54 ,  G03B27/62 ,  G03B27/68

CPC分类号： G03F1/64 ,  G03F1/62 ,  G03F7/70308 ,  G03F7/70425 ,  G03F7/70783 ,  G03F7/70983

摘要： Provided are systems and methods for overcoming optical errors occurring from reticle and other hardware usage in a semiconductor fabrication apparatus. The systems and methods minimize optical errors, such as those resulting from gravitational sag on a reticle or mask, for a pattern being projected onto a wafer. The reduced errors allow larger reticles and masks to be used—while maintaining optical accuracy; and also improve optical budget management.

摘要翻译： 提供了用于克服半导体制造装置中的掩模版和其他硬件使用发生的光学误差的系统和方法。 系统和方法将光学误差最小化，例如由于在掩模版或掩模上引起的重力下垂引起的误差，用于将图案投影到晶片上。 减少的误差允许使用更大的掩模和掩模 - 同时保持光学精度; 并改善光预算管理。

公开(公告)号：US06831022B1

公开(公告)日：2004-12-14

申请号：US10607353

申请日：2003-06-26

申请人： Robert D. Broyles ,  Michael J. Berman

发明人： Robert D. Broyles ,  Michael J. Berman

IPC分类号： H01L2131

CPC分类号： B01D5/0054 ,  B01D5/0087 ,  B01D8/00

摘要： A system, apparatus and/or method is provided for removing water vapor from a wafer processing chamber generated as a byproduct of wafer processing. A water vapor trap is used to collect the water vapor byproduct from the processing chamber interior. The water vapor trap has at least a portion thereof in communication with an interior of the processing chamber for collection of the water vapor and another portion thereof in communication with an exterior of the processing chamber. The portions are movable with respect to the interior and exterior of the processing chamber such that the portions may switch places. This allows the processing chamber to be in at least a substantially continuous mode of operation while still providing for the removal of water vapor byproduct via the water vapor trap. The “used” portion of the water vapor trap is regenerated while the “clean” portion is collecting water vapor.

摘要翻译： 提供了一种系统，装置和/或方法，用于从作为晶片处理的副产物产生的晶片处理室中去除水蒸气。 使用水蒸汽捕集器从处理室内部收集水蒸气副产物。 水蒸汽阱具有至少一部分与处理室的内部连通，用于收集水蒸汽，其另一部分与处理室的外部连通。 这些部分可相对于处理室的内部和外部移动，使得这些部分可以切换位置。 这允许处理室处于至少基本上连续的操作模式，同时仍然提供通过水蒸汽阱除去水蒸气副产物。 当“清洁”部分收集水蒸汽时，再次使用“蒸发”的水蒸汽捕集器。

公开(公告)号：US06764749B2

公开(公告)日：2004-07-20

申请号：US10207607

申请日：2002-07-29

申请人： Michael J. Berman ,  George E. Bailey

发明人： Michael J. Berman ,  George E. Bailey

IPC分类号： B32B700

CPC分类号： G03F7/091 ,  G03F7/11 ,  Y10S428/913 ,  Y10T428/24942 ,  Y10T428/31504

摘要： A method to improve the resolution of a photolithography system by using one or more coupling layers between a photo resist and an anti-reflective coating. The coupling layer(s) compensate for a mis-match in indexes of reflection between the photo resist and anti-reflective coating and minimize the amount of energy which is reflected back into the photo resist, thereby improving the quality of the resulting image which is formed on the photo resist during the process.

摘要翻译： 通过使用光抗蚀剂和抗反射涂层之间的一个或多个耦合层来提高光刻系统的分辨率的方法。 耦合层补偿光致抗蚀剂和抗反射涂层之间的反射指数中的错配，并将反射回光致抗蚀剂的能量的量最小化，从而提高所得图像的质量 在该过程中形成在光致抗蚀剂上。

公开(公告)号：US06347291B1

公开(公告)日：2002-02-12

申请号：US09478164

申请日：2000-01-05

申请人： Michael J. Berman

发明人： Michael J. Berman

IPC分类号： G06F1700

CPC分类号： G03F9/7046 ,  H01L21/681

摘要： A system for precisely locating an absolute position of a target structure disposed at a known relative position on a substrate, where the substrate has devices in a pattern. Input means receive information, including a substrate size, a pattern offset, a device size, the known relative position of the target structure, and a target structure shape. Staging means receive the substrate in a known orientation. Processing means are used to locate several positions. A center position of the substrate is located from the substrate size and the known orientation of the substrate. A first intermediate position is located by combining the center position of the substrate with the pattern offset. A second intermediate position is located by combining the first intermediate position with at least a first component of the device size. A third intermediate position is located by combining the second intermediate position with the known relative position of the target structure. The absolute position of the target structure is located by comparing the target structure shape to shapes of structures disposed on the substrate in proximity to the third intermediate position, and aligning the target structure shape to a closest matching one of the structures disposed in proximity to the third intermediate position.

摘要翻译： 一种用于精确地定位设置在基板上的已知相对位置的目标结构的绝对位置的系统，其中基板具有图案中的装置。 输入装置接收包括基板尺寸，图案偏移，装置尺寸，目标结构的已知相对位置以及目标结构形状的信息。 分级装置以已知的方向接收基板。 处理手段用于定位多个位置。 衬底的中心位置位于衬底尺寸和衬底的已知取向。 通过组合基板的中心位置和图案偏移来定位第一中间位置。 第二中间位置通过将第一中间位置与装置尺寸的至少第一部件组合而定位。 通过将第二中间位置与目标结构的已知相对位置组合来定位第三中间位置。 目标结构的绝对位置通过将目标结构形状与设置在基板上的结构的形状比较接近第三中间位置而定位，并且将目标结构形状与设置在第三中间位置附近的最接近的一个结构对准 第三中间位置。