公开(公告)号：US10163507B1

公开(公告)日：2018-12-25

申请号：US16111746

申请日：2018-08-24

Applicant: Micron Technology, Inc.

Inventor： DerChang Kau ,  Gianpaolo Spadini

IPC: G11C11/00 ,  G11C13/00 ,  H01L23/528 ,  G11C16/24 ,  H01L45/00 ,  H01L27/24 ,  G11C16/08

Abstract: Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.

公开(公告)号：US10090050B2

公开(公告)日：2018-10-02

申请号：US15905317

申请日：2018-02-26

Applicant: Micron Technology, Inc.

Inventor： DerChang Kau ,  Gianpaolo Spadini

IPC: G11C11/00 ,  G11C13/00

Abstract: Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.

公开(公告)号：US10050084B2

公开(公告)日：2018-08-14

申请号：US15481208

申请日：2017-04-06

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jong-Won Lee ,  Gianpaolo Spadini ,  Stephen W. Russell ,  Derchang Kau

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00

Abstract: Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.

公开(公告)号：US20170345498A1

公开(公告)日：2017-11-30

申请号：US15676560

申请日：2017-08-14

Applicant: Micron Technology, Inc.

Inventor： DerChang Kau ,  Gianpaolo Spadini

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C13/0023 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0097 ,  G11C16/08 ,  G11C16/24 ,  H01L23/528 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/144 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.

公开(公告)号：US09306165B2

公开(公告)日：2016-04-05

申请号：US14228104

申请日：2014-03-27

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jong-Won Lee ,  Gianpaolo Spadini ,  Stephen W. Russell ,  Derchang Kau

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L27/2463 ,  G11C13/0004 ,  G11C13/0023 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  H01L27/24 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1675 ,  H01L45/1683

Abstract: Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.

Abstract translation: 公开了形成包含相变和/或硫族化物材料的记忆单元的方法。 在一个方面，该方法包括提供沿第一方向延伸的下线叠层，下线叠层包括在下导电线上的牺牲线。 该方法还包括通过选择性地去除牺牲线的牺牲材料并用硫族化物材料代替牺牲线来形成沿第一方向延伸的硫属化物线。