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公开(公告)号：US09659997B2
公开(公告)日：2017-05-23
申请号：US15058810
申请日：2016-03-02
Applicant: Micron Technology, Inc.
Inventor： Jong-Won Lee , Gianpaolo Spadini , Stephen W. Russell , Derchang Kau
CPC classification number: H01L27/2463 , G11C13/0004 , G11C13/0023 , G11C13/004 , G11C13/0069 , G11C13/0097 , H01L27/24 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1675 , H01L45/1683
Abstract: Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
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公开(公告)号：US20150280118A1
公开(公告)日：2015-10-01
申请号：US14228104
申请日：2014-03-27
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Jong-Won Lee , Gianpaolo Spadini , Stephen W. Russell , Derchang Kau
CPC classification number: H01L27/2463 , G11C13/0004 , G11C13/0023 , G11C13/004 , G11C13/0069 , G11C13/0097 , H01L27/24 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1675 , H01L45/1683
Abstract: Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
Abstract translation: 公开了形成包含相变和/或硫族化物材料的记忆单元的方法。 在一个方面，该方法包括提供沿第一方向延伸的下线叠层，下线叠层包括在下导电线上的牺牲线。 该方法还包括通过选择性地去除牺牲线的牺牲材料并用硫族化物材料代替牺牲线来形成沿第一方向延伸的硫属化物线。
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3.发明申请公开(公告)号：US20130299767A1
公开(公告)日：2013-11-14
申请号：US13945241
申请日：2013-07-18
Applicant: Micron Technology, Inc.
Inventor： Jong-Won Lee , Kuo-Wei Chang , Michael L. McSwiney
IPC: H01L45/00
CPC classification number: H01L45/06 , C23C16/34 , H01L27/2427 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/16 , H01L45/1683
Abstract: Organometallic precursors may be utilized to form titanium silicon nitride films that act as heaters for phase change memories. By using a combination of TDMAT and TrDMASi, for example in a metal organic chemical vapor deposition chamber, a relatively high percentage of silicon may be achieved in reasonable deposition times, in some embodiments. In one embodiment, two separate bubblers may be utilized to feed the two organometallic compounds in gaseous form to the deposition chamber so that the relative proportions of the precursors can be readily controlled.
Abstract translation: 有机金属前体可用于形成用作相变存储器的加热器的氮化钛膜。 通过使用TDMAT和TrDMASi的组合，例如在金属有机化学气相沉积室中，在一些实施方案中，可以在合理的沉积时间内实现相对高百分比的硅。 在一个实施方案中，可以使用两个分开的起泡器将气态形式的两种有机金属化合物进料到沉积室，以便容易地控制前体的相对比例。
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公开(公告)号：US20160260776A1
公开(公告)日：2016-09-08
申请号：US15058810
申请日：2016-03-02
Applicant: Micron Technology, Inc.
Inventor： Jong-Won Lee , Gianpaolo Spadini , Stephen W. Russell , Derchang Kau
CPC classification number: H01L27/2463 , G11C13/0004 , G11C13/0023 , G11C13/004 , G11C13/0069 , G11C13/0097 , H01L27/24 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1675 , H01L45/1683
Abstract: Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
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5.发明授权Phase change memory including ovonic threshold switch with layered electrode and methods for forming the same 有权相变存储器，包括具有分层电极的超声门限开关及其形成方法公开(公告)号：US09029826B2
公开(公告)日：2015-05-12
申请号：US14013361
申请日：2013-08-29
Applicant: Micron Technology, Inc.
Inventor： Kuo-Wei Chang , Jinwook Lee , Jong-Won Lee , Elijah V. Karpov
CPC classification number: H01L45/16 , H01L45/06 , H01L45/1253 , H01L45/126 , H01L45/141 , H01L45/1675
Abstract: Erosion of chalcogenides in phase change memories using ovonic threshold switch selectors can be reduced by controlling columnar morphology in electrodes used in the ovonic threshold switch. The columnar morphology may cause cracks to occur which allow etchants used to etch the ovonic threshold switch to sneak through the ovonic threshold switch and to attack chalcogenides, either in the switch or in the memory element. In one embodiment, the electrode may be split into two metal nitride layers separated by an intervening metal layer.
Abstract translation: 通过控制在椭圆形阈值开关中使用的电极中的柱状形态，可以减少硫化物在相变存储器中的侵蚀。 柱状形态可能导致裂纹发生，这允许蚀刻剂用于蚀刻超声波阈值开关以潜入超声波阈值开关，并在开关或存储元件中攻击硫族化物。 在一个实施例中，电极可以被分成由中间金属层隔开的两个金属氮化物层。
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Patent Agency Ranking
公开(公告)号：US20190013358A1
公开(公告)日：2019-01-10
申请号：US16045514
申请日：2018-07-25
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Jong-Won Lee , Gianpaolo Spadini , Stephen W. Russell , Derchang Kau
CPC classification number: H01L27/2463 , G11C13/0004 , G11C13/0023 , G11C13/004 , G11C13/0069 , G11C13/0097 , H01L27/24 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1675 , H01L45/1683
Abstract: Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
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7.发明授权公开(公告)号：US08633463B2
公开(公告)日：2014-01-21
申请号：US13945241
申请日：2013-07-18
Applicant: Micron Technology, Inc.
Inventor： Jong-Won Lee , Kuo-Wei Chang , Michael L. McSwiney
CPC classification number: H01L45/06 , C23C16/34 , H01L27/2427 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/16 , H01L45/1683
Abstract: Organometallic precursors may be utilized to form titanium silicon nitride films that act as heaters for phase change memories. By using a combination of TDMAT and TrDMASi, for example in a metal organic chemical vapor deposition chamber, a relatively high percentage of silicon may be achieved in reasonable deposition times, in some embodiments. In one embodiment, two separate bubblers may be utilized to feed the two organometallic compounds in gaseous form to the deposition chamber so that the relative proportions of the precursors can be readily controlled.
Abstract translation: 有机金属前体可用于形成用作相变存储器的加热器的氮化钛膜。 通过使用TDMAT和TrDMASi的组合，例如在金属有机化学气相沉积室中，在一些实施方案中，可以在合理的沉积时间内实现相对高百分比的硅。 在一个实施方案中，可以使用两个分开的起泡器将气态形式的两种有机金属化合物进料到沉积室，以便容易地控制前体的相对比例。
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公开(公告)号：US10475853B2
公开(公告)日：2019-11-12
申请号：US16045514
申请日：2018-07-25
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Jong-Won Lee , Gianpaolo Spadini , Stephen W. Russell , Derchang Kau
Abstract: Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
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公开(公告)号：US10050084B2
公开(公告)日：2018-08-14
申请号：US15481208
申请日：2017-04-06
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Jong-Won Lee , Gianpaolo Spadini , Stephen W. Russell , Derchang Kau
Abstract: Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
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公开(公告)号：US09306165B2
公开(公告)日：2016-04-05
申请号：US14228104
申请日：2014-03-27
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Jong-Won Lee , Gianpaolo Spadini , Stephen W. Russell , Derchang Kau
CPC classification number: H01L27/2463 , G11C13/0004 , G11C13/0023 , G11C13/004 , G11C13/0069 , G11C13/0097 , H01L27/24 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1675 , H01L45/1683
Abstract: Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
Abstract translation: 公开了形成包含相变和/或硫族化物材料的记忆单元的方法。 在一个方面，该方法包括提供沿第一方向延伸的下线叠层，下线叠层包括在下导电线上的牺牲线。 该方法还包括通过选择性地去除牺牲线的牺牲材料并用硫族化物材料代替牺牲线来形成沿第一方向延伸的硫属化物线。
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