公开(公告)号：US11587918B2

公开(公告)日：2023-02-21

申请号：US16717827

申请日：2019-12-17

Applicant: Micron Technology, Inc.

Inventor： Shams U. Arifeen ,  Xiaopeng Qu

IPC: H01L25/18 ,  H01L23/498 ,  H01L23/00 ,  H01L25/00

Abstract: Semiconductor devices and semiconductor device packages may include at least one first semiconductor die supported on a first side of a substrate. The at least one first semiconductor die may include a first active surface. A second semiconductor die may be supported on a second, opposite side of the substrate. The second semiconductor die may include a second active surface located on a side of the second semiconductor die facing the substrate. The second semiconductor die may be configured to have higher median power consumption than the at least one first semiconductor die during operation. An electronic system incorporating a semiconductor device package is disclosed, as are related methods.

公开(公告)号：US20220291280A1

公开(公告)日：2022-09-15

申请号：US17829224

申请日：2022-05-31

Applicant: Micron Technology, Inc.

Inventor： Xiaopeng Qu ,  Amy R. Griffin ,  Wesley J. Orme

IPC: G01R31/28

Abstract: Heat spreaders for use in semiconductor device testing, such as burn-in testing, are disclosed herein. In one embodiment, a heat spreader is configured to be coupled to a burn-in testing board including a plurality of sockets. The heat spreader includes (i) a frame having a plurality of apertures, and (ii) a plurality of heat sinks movably positioned within corresponding ones of the apertures. When the heat spreader is coupled to the burn-in testing board, the heat sinks are configured to extend into corresponding ones of the sockets to thermally contact semiconductor devices positioned within the sockets. The heat spreader can promote a uniform temperature gradient across the burn-in board during testing of the semiconductor devices.

公开(公告)号：US11385281B2

公开(公告)日：2022-07-12

申请号：US16546674

申请日：2019-08-21

Applicant: Micron Technology, Inc.

Inventor： Xiaopeng Qu ,  Amy R. Griffin ,  Hyunsuk Chun

IPC: G01R31/28

Abstract: Heat spreaders for use in semiconductor device testing, such as burn-in testing, are disclosed herein. In one embodiment, a heat spreader is configured to be coupled to a burn-in testing board including a plurality of sockets. The heat spreader includes a base portion and a plurality of protrusions extending from the base portion. When the heat spreader is coupled to the burn-in testing board, the protrusions are configured to extend into corresponding ones of the sockets to thermally contact semiconductor devices positioned within the sockets. The heat spreader can promote a uniform temperature gradient across the burn-in board during testing of the semiconductor devices.

公开(公告)号：US11348875B2

公开(公告)日：2022-05-31

申请号：US16803954

申请日：2020-02-27

Applicant: Micron Technology, Inc.

Inventor： Koustav Sinha ,  Xiaopeng Qu

IPC: H01L23/538 ,  H05K1/18 ,  H01L23/498 ,  H01L23/00

Abstract: Semiconductor devices having an array of flexible connectors configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor assembly includes a substrate coupled to an array of flexible connectors. Each flexible connector can be transformed between a resting configuration and a loaded configuration. Each flexible connector can include a conductive wire electrically coupled to the substrate and a support material at least partially surrounding the conductive wire. The conductive wire can have a first shape when the flexible connector is in the resting configuration and a second, different shape when the flexible connector is in the loaded configuration.

公开(公告)号：US20220122942A1

公开(公告)日：2022-04-21

申请号：US17562290

申请日：2021-12-27

Applicant: Micron Technology, Inc.

Inventor： Hyunsuk Chun ,  Xiaopeng Qu

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/373 ,  H01L25/00 ,  H01L21/56

Abstract: Semiconductor device assemblies are provided with one or more layers of thermally conductive material disposed between adjacent semiconductor dies in a vertical stack. The thermally conductive material can be configured to conduct heat generated by one or more of the semiconductor dies in laterally outward towards an outer edge of the assembly. The layer of thermally conductive material can comprise one or more allotropes of carbon, such as diamond, graphene, graphite, carbon nanotubes, or a combination thereof. The layer of thermally conductive material can be provided via deposition (e.g., sputtering, PVD, CVD, or ALD), or via adhering a film comprising the layer of thermally conductive material to one or more of the semiconductor dies.

公开(公告)号：US20220028850A1

公开(公告)日：2022-01-27

申请号：US17493317

申请日：2021-10-04

Applicant: Micron Technology, Inc.

Inventor： Shams U. Arifeen ,  Xiaopeng Qu

IPC: H01L25/18 ,  H01L23/498 ,  H01L23/00 ,  H01L25/00

Abstract: Semiconductor devices and semiconductor device packages may include at least one first semiconductor die supported on a first side of a substrate. The at least one first semiconductor die may include a first active surface. A second semiconductor die may be supported on a second, opposite side of the substrate. The second semiconductor die may include a second active surface located on a side of the second semiconductor die facing the substrate. The second semiconductor die may be configured to have higher median power consumption than the at least one first semiconductor die during operation. An electronic system incorporating a semiconductor device package is disclosed, as are related methods.

公开(公告)号：US11171130B2

公开(公告)日：2021-11-09

申请号：US16717827

申请日：2019-12-17

Applicant: Micron Technology, Inc.

Inventor： Shams U. Arifeen ,  Xiaopeng Qu

IPC: H01L25/18 ,  H01L23/498 ,  H01L23/00 ,  H01L25/00

Abstract: Semiconductor devices and semiconductor device packages may include at least one first semiconductor die supported on a first side of a substrate. The at least one first semiconductor die may include a first active surface. A second semiconductor die may be supported on a second, opposite side of the substrate. The second semiconductor die may include a second active surface located on a side of the second semiconductor die facing the substrate. The second semiconductor die may be configured to have higher median power consumption than the at least one first semiconductor die during operation. An electronic system incorporating a semiconductor device package is disclosed, as are related methods.

公开(公告)号：US11011449B1

公开(公告)日：2021-05-18

申请号：US16803637

申请日：2020-02-27

Applicant: Micron Technology, Inc.

Inventor： Xiaopeng Qu ,  Shams U. Arifeen

IPC: G11C11/34 ,  H01L23/367 ,  G11C5/02 ,  H01L23/427

Abstract: A semiconductor memory system having a plurality of semiconductor memory modules that are spaced apart from each other by a gap. The system includes a heat dissipation assembly having a thermally conductive base portion configured to transfer heat away from the memory devices. The heat dissipation assembly including at least one cooling unit extending from the base portion. The at least one cooling unit having a wall with an exterior surface and a cavity. The cooling unit is configured to fit in the gap between adjacent memory modules such that a portion of the exterior surface on a first side of the cooling unit is coupled to one of the first memory devices and another portion of the exterior surface on a second side of the cooling unit is coupled to one of the second memory devices across the gap.

公开(公告)号：US20200176353A1

公开(公告)日：2020-06-04

申请号：US16205151

申请日：2018-11-29

Applicant: Micron Technology, Inc.

Inventor： Xiaopeng Qu ,  Amy R. Griffin ,  Hyunsuk Chun

IPC: H01L23/433 ,  H01L23/31 ,  H01L23/367

Abstract: A memory system having heat spreaders with different arrangements of projections are provided. In some embodiments, the memory system comprises a substrate, a first semiconductor device attached to a first side of the substrate, a second semiconductor device attached to a second side of the substrate, a first heat spreader attached to the first semiconductor device, and a second heat spreader attached the second semiconductor device. The first heat spreader has a plurality of first projections facing a first direction and positioned in a first arrangement, and the second heat spreader has a plurality of second projections facing a second direction and positioned in a second arrangement different than the first arrangement. In some embodiments, the first projections are aligned with a majority of the second projections in a first direction and are offset with a majority of the second projections in a second direction.

公开(公告)号：US20190132995A1

公开(公告)日：2019-05-02

申请号：US15795690

申请日：2017-10-27

Applicant: Micron Technology, Inc.

Inventor： Xiaopeng Qu

IPC: H05K7/20 ,  H05K7/14 ,  H05K1/18 ,  F28F3/02

Abstract: Assemblies include at least one substrate, at least one electronic device coupled to the substrate, and heat dissipation elements. The heat dissipation elements comprises at least one heat spreader in communication with the at least one electronic device and at least one heat sink in communication with the at least one heat spreader. Methods of dissipating heat energy includes transferring heat energy from memory devices to heat spreaders positioned adjacent to the memory devices and transferring the heat energy from the heat spreaders to a heat sink.