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公开(公告)号:US10725913B2
公开(公告)日:2020-07-28
申请号:US15977808
申请日:2018-05-11
Applicant: Micron Technology, Inc.
Inventor: Robert Nasry Hasbun , Timothy M. Hollis , Jeffrey P. Wright , Dean D. Gans
IPC: G06F13/16 , G06F12/0806 , H04L5/00 , H04L27/14
Abstract: Methods, systems, and devices that support variable modulation schemes for memory are described. A device may switch between different modulation schemes for communication based on one or more operating parameters associated with the device or a component of the device. The modulation schemes may involve amplitude modulation in which different levels of a signal represent different data values. For instance, the device may use a first modulation scheme that represents data using two levels and a second modulation scheme that represents data using four levels. In one example, the device may switch from the first modulation scheme to the second modulation scheme when bandwidth demand is high, and the device may switch from the second modulation scheme to the first modulation scheme when power conservation is in demand. The device may also, based on the operating parameter, change the frequency of the signal pulses communicated using the modulation schemes.
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32.
公开(公告)号:US10424351B2
公开(公告)日:2019-09-24
申请号:US16222806
申请日:2018-12-17
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Dean D. Gans , Daniel C. Skinner
Abstract: Apparatuses and methods for writing and storing parameter codes for operating parameters, and selecting between the parameter codes to set an operating condition for a memory are disclosed. An example apparatus includes a first mode register and a second mode register. The first mode register is configured to store first and second parameter codes for a same operating parameter. The second mode register is configured to store a parameter code for a control parameter to select between the first and second parameter codes to set a current operating condition for the operating parameter. An example method includes storing in a first register a first parameter code for an operating parameter used to set a first memory operating condition, and further includes storing in a second register a second parameter code for the operating parameter used to set a second memory operating condition.
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公开(公告)号:US10355893B2
公开(公告)日:2019-07-16
申请号:US15977813
申请日:2018-05-11
Applicant: Micron Technology, Inc.
Inventor: Robert Nasry Hasbun , Timothy M. Hollis , Jeffrey P. Wright , Dean D. Gans
IPC: H04L27/04 , G06F12/02 , G11C8/12 , G06F13/38 , H04L27/06 , H04L27/02 , H04L25/49 , G06F13/16 , G11C5/06 , G11C7/10 , G11C7/22
Abstract: Methods, systems, and devices for multiplexing distinct signals on a single pin of a memory device are described. Techniques are described herein to multiplex data using a modulation scheme having at least three levels. The modulated data may be communicated to multiple memory dies over a shared bus. Each of the dies may include a same or different type of memory cell and, in some examples, a multi-level signaling scheme may be pulse amplitude modulation (PAM). Each unique symbol of the modulated signal may be configured to represent a plurality of bits of data.
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公开(公告)号:US20190103149A1
公开(公告)日:2019-04-04
申请号:US15977820
申请日:2018-05-11
Applicant: Micron Technology, Inc.
Inventor: Robert Nasry Hasbun , Timothy M. Hollis , Jeffrey P. Wright , Dean D. Gans
Abstract: Methods, systems, and devices that supports dual-mode modulation in the context of memory access are described. A system may include a memory array coupled with a buffer, and a multiplexer may be coupled with the buffer, where the multiplexer may be configured to output a bit pair representative of data stored within the memory array. The multiplexer may also be coupled with a driver, where the driver may be configured to generate a symbol representative of the bit pair that is output by the multiplexer.
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35.
公开(公告)号:US10157647B2
公开(公告)日:2018-12-18
申请号:US15933167
申请日:2018-03-22
Applicant: Micron Technology, Inc.
Inventor: Dean D. Gans , Daniel C. Skinner
Abstract: Apparatuses and methods for writing and storing parameter codes for operating parameters, and selecting between the parameter codes to set an operating condition for a memory are disclosed. An example apparatus includes a first mode register and a second mode register. The first mode register is configured to store first and second parameter codes for a same operating parameter. The second mode register is configured to store a parameter code for a control parameter to select between the first and second parameter codes to set a current operating condition for the operating parameter. An example method includes storing in a first register a first parameter code for an operating parameter used to set a first memory operating condition, and further includes storing in a second register a second parameter code for the operating parameter used to set a second memory operating condition.
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公开(公告)号:US20180130508A1
公开(公告)日:2018-05-10
申请号:US15855849
申请日:2017-12-27
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Timothy M. Hollis , Dean D. Gans , Larren G. Weber
CPC classification number: G11C5/14 , G11C7/1045 , G11C7/1048 , G11C7/1057 , G11C7/1069 , G11C11/4093 , G11C11/4096
Abstract: An apparatus comprising is disclosed. The apparatus a driver circuit configured to selectively provide a first supply voltage to an output node in a first operating mode and to selectively provide a second supply voltage to the output node in a second operating mode, based on one or more enable signals.
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公开(公告)号:US09911469B1
公开(公告)日:2018-03-06
申请号:US15348578
申请日:2016-11-10
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Timothy M. Hollis , Dean D. Gans , Larren G. Weber
CPC classification number: G11C5/14 , G11C7/1045 , G11C7/1048 , G11C7/1057 , G11C7/1069 , G11C11/4093 , G11C11/4096
Abstract: An apparatus comprising is disclosed. The apparatus a driver circuit configured to selectively provide a first supply voltage to an output node in a first operating mode and to selectively provide a second supply voltage to the output node in a second operating mode, based on one or more enable signals.
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38.
公开(公告)号:US11915788B2
公开(公告)日:2024-02-27
申请号:US17727283
申请日:2022-04-22
Applicant: Micron Technology, Inc.
Inventor: Robert Nasry Hasbun , Dean D. Gans , Sharookh Daruwalla
CPC classification number: G11C7/22 , G06F13/36 , G11C7/10 , G06F13/1689
Abstract: Methods, systems, and devices for a latency indication in a memory system or sub-system are described. An interface controller of a memory system may transmit an indication of a time delay (e.g., a wait signal) to a host in response to receiving an access command from the host. The interface controller may transmit such an indication when a latency associated with performing the access command is likely to be greater than a latency anticipated by the host. The interface controller may determine a time delay based on a status of buffer or a status of memory device, or both. The interface controller may use a pin designated and configured to transmit a command or control information to the host when transmitting a signal including an indication of a time delay. The interface controller may use a quantity, duration, or pattern of pulses to indicate a duration of a time delay.
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公开(公告)号:US20230420032A1
公开(公告)日:2023-12-28
申请号:US18312747
申请日:2023-05-05
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Dean D. Gans , John D. Porter
IPC: G11C11/4076 , G11C11/4074 , G06F3/06 , G06F13/16
CPC classification number: G11C11/4076 , G11C11/4074 , G06F3/0673 , G06F3/0604 , G06F3/0659 , G06F13/1689
Abstract: Apparatuses and methods for input receiver circuits and receiver masks for electronic memory are disclosed. Embodiments of the disclosure include memory receiver masks having shapes other than rectangular shapes. For example, a receiver mask according to some embodiments of the disclosure may have a hexagonal shape. Other shapes of receiver masks may also be included in other embodiments of the disclosure. Circuits, timing, and operating parameters for achieving non-rectangular and various shapes of receiver mask are described.
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40.
公开(公告)号:US20230144541A1
公开(公告)日:2023-05-11
申请号:US18094799
申请日:2023-01-09
Applicant: Micron Technology, Inc.
Inventor: Dean D. Gans
CPC classification number: G06F11/076 , G06F11/3037 , G06F12/0246 , G06F13/1668 , G11C11/2257 , G11C11/2277 , G11C29/04
Abstract: Memory devices and methods of operating memory devices in which maintenance operations can be scheduled on an as-needed basis for those memory portions where activity (e.g., operations in excess of a predetermined threshold) warrants a maintenance operation are disclosed. In one embodiment, an apparatus comprises a memory including a memory location, and circuitry configured to determine a count corresponding to a number of operations at the memory location, to schedule a maintenance operation for the memory location in response to the count exceeding a first predetermined threshold, and to decrease the count by an amount corresponding to the first predetermined threshold in response to executing the scheduled maintenance operation. The circuitry may be further configured to disallow, in response to determining that the count has reached a maximum permitted value, further operations at the memory location until after the count has been decreased.
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