Abstract:
A pattern of conductive ink is disposed on the topside of the unsingulated integrated circuits of a wafer, and, typically after wafer probing, the pattern of conductive ink is removed. The conductive ink pattern provides an electrical pathway between bond pads on an integrated circuit and large contact pads disposed on the topside of the integrated circuit. Each of the large contact pads is much greater in area than the corresponding bond pads, and are spaced apart so that the pitch of the large contact pads is much greater than that of the bond pads. In one aspect of the present invention, the conductive ink includes a mixture of conductive particles and wafer bonding thermoset plastic. In another aspect of the present invention, the conductive ink is heated and disposed on a wafer by an ink jet printing system.
Abstract:
A pattern of conductive ink is disposed on the topside of the unsingulated integrated circuits of a wafer, and, typically after wafer probing, the pattern of conductive ink is removed. The conductive ink pattern provides an electrical pathway between bond pads on an integrated circuit and large contact pads disposed on the topside of the integrated circuit. Each of the large contact pads is much greater in area than the corresponding bond pads, and are spaced apart so that the pitch of the large contact pads is much greater than that of the bond pads. In one aspect of the present invention, the conductive ink includes a mixture of conductive particles and wafer bonding thermoset plastic. In another aspect of the present invention, the conductive ink is heated and disposed on a wafer by an ink jet printing system.
Abstract:
A wafer translator is provided with a patterned layer of wafer bonding thermoset plastic and is removably attached with a wafer so as to form a wafer/wafer translator pair. The wafer translator acts as a mechanical support during a thinning process as well as during a wafer dicing operation. The singulated integrated circuits are then removed from the wafer translator. In some embodiments, wafer level testing of the integrated circuits on the wafer is performed subsequent to the wafer thinning process but before the wafer and wafer translator are separated. In other embodiments, wafer level testing of the integrated circuits on the wafer is performed subsequent to the wafer dicing operation but before the diced wafer and wafer translator are separated.
Abstract:
A pattern of conductive ink is disposed on the topside of the unsingulated integrated circuits of a wafer, and, typically after wafer probing, the pattern of conductive ink is removed. The conductive ink pattern provides an electrical pathway between bond pads on an integrated circuit and large contact pads disposed on the topside of the integrated circuit. Each of the large contact pads is much greater in area than the corresponding bond pads, and are spaced apart so that the pitch of the large contact pads is much greater than that of the bond pads. In one aspect of the present invention, the conductive ink includes a mixture of conductive particles and wafer bonding thermoset plastic. In another aspect of the present invention, the conductive ink is heated and disposed on a wafer by an ink jet printing system.
Abstract:
Access to integrated circuits of a wafer for concurrently performing two or more types of testing, is provided by bringing a wafer and an edge-extended wafer translator into an attached state. The edge-extended wafer translator having wafer-side contact terminals and inquiry-side contact terminals disposed thereon, a first set of wafer-side contact terminals being electrically coupled to a first set of inquiry-side contact terminals, and a second set of wafer-side contact terminals being electrically coupled to a second set of inquiry-side contact terminals. The edge-extended wafer translator having a central portion generally coextensive with the attached wafer, and an edge-extended portion extending beyond the boundary generally defined by the outer circumferential edge of the wafer. A first set of pads of at least one integrated circuit is electrically coupled to the first set of wafer-side contact terminals, and a second set of pads of the integrated circuit is electrically coupled to the second set of wafer-side contact terminals. The edge-extended wafer translator may be shaped such that its edge-extended portion is not coplanar with the central portion thereof.
Abstract:
Apparatus and methods are provided for wafer translators having a silicon core, an isolating conductive ground plane, and copper and subjacent resin layers disposed on the ground plane. A silicon substrate having at least one major surface coated with an electrically conductive layer is subjected to a number of printed circuit board manufacturing operations including, but not limited to, application of resin-coated copper foils; mechanical grinding of copper layers; mechanical drilling of via openings in a dielectric material; plating of copper, nickel, and gold layers; laser removal of metal; and chemical removal of metal; in order to produce a wafer translator having a silicon core. In further aspects of the present invention, alignment marks are formed and contact structures, such as stud bumps, are placed relative to a local set of alignment marks.
Abstract:
A translated wafer stand-in tester, being a hybrid apparatus capable of emulating the form factor and some or all behaviors of a translated wafer under test, which is operable to store, quantify, encode and convey, either directly or remotely, data from a testing system, including but not limited to pad pressure, electrical contact and temperature. The translated wafer stand-in tester may include several stacked and attached layers, at least one internal layer including electronic components operable to interact with a test system.
Abstract:
An apparatus for providing electrical pathways between one or more unsingulated integrated circuits and one or more test circuits external to the integrated circuits, includes a flexible substrate having a first major surface and a second major surface, a plurality of first contact structures disposed in a central portion of the first surface of the flexible substrate, a plurality of second contact structures disposed in a peripheral annular region of the first surface of the flexible substrate, and a plurality of first electrically conductive pathways, each of the plurality of first electrically conductive pathways coupled to a respective first and second contact structure, wherein the second surface is free from first contact structures, second contact structures, and first electrically conductive pathways.
Abstract:
Concurrent electrical access to the pads of integrated circuits on a wafer is provided by an edge-extended wafer translator that carries signals from one or more pads on one or more integrated circuits to contact terminals on the inquiry-side of the edge-extended wafer translator, including portions of the inquiry-side that are superjacent the wafer when the wafer and the edge-extended wafer translator are in a removably attached state, and portions of the inquiry side that reside outside a region defined by the intersection of the wafer and the edge-extended wafer translator. In a further aspect of the present invention, access to the pads of integrated circuits on a wafer is additionally provided by contact terminals in a second inquiry area located on the wafer-side of the edge-extended wafer translator in a region thereof bounded by its outer circumference and the circumference of the attached wafer.
Abstract:
An apparatus for providing electrical pathways between one or more unsingulated integrated circuits and one or more test circuits external to the integrated circuits, includes a flexible substrate having a first major surface and a second major surface, a plurality of first contact structures disposed in a central portion of the first surface of the flexible substrate, a plurality of second contact structures disposed in a peripheral annular region of the first surface of the flexible substrate, and a plurality of first electrically conductive pathways, each of the plurality of first electrically conductive pathways coupled to a respective first and second contact structure, wherein the second surface is free from first contact structures, second contact structures, and first electrically conductive pathways.