-
公开(公告)号:US20200083859A1
公开(公告)日:2020-03-12
申请号:US16680891
申请日:2019-11-12
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Munehisa WATANABE , Hideki IWAMOTO , Hajime KANDO , Syunsuke KIDO
IPC: H03H9/02 , H01L41/22 , H01L41/18 , H01L41/047 , H03H3/10 , H03H9/54 , H01L41/04 , H03H3/08 , H03H3/04 , H03H3/02
Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
-
公开(公告)号:US20190149131A1
公开(公告)日:2019-05-16
申请号:US16243158
申请日:2019-01-09
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Syunsuke KIDO
Abstract: A multiplexer includes a first filter on a first path connecting a common terminal and a first terminal and defined by a band pass filter, a low pass filter, or a high pass filter, and a second resonator on a second path connecting the common terminal and a second terminal and defined by a band elimination filter including at least one elastic wave resonator. A pass band of the first filter and an attenuation band of the second filter overlap with each other, and a ripple of a first resonator closest to the common terminal is generated only outside pass bands of the first filter and the second filter.
-
公开(公告)号:US20150102705A1
公开(公告)日:2015-04-16
申请号:US14576748
申请日:2014-12-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Hideki IWAMOTO , Syunsuke KIDO
IPC: H03H9/25 , H03H9/205 , H03H9/17 , H01L41/047 , H01L41/08
CPC classification number: H03H9/25 , H01L41/047 , H01L41/0805 , H03H9/0222 , H03H9/02574 , H03H9/171 , H03H9/205
Abstract: An elastic wave device includes a high acoustic velocity film configured such that a bulk wave propagates at a higher acoustic velocity than an elastic wave that propagates in a piezoelectric film, a low acoustic velocity film configured such that a bulk wave propagates at a lower acoustic velocity than a bulk wave that propagates in the piezoelectric film is laminated on the high acoustic velocity film, the piezoelectric film is laminated on the low acoustic velocity film, and an IDT electrode is laminated on one surface of the piezoelectric film. In an upper structure section, an energy concentration ratio of a main mode which is an elastic wave is not less than about 99.9% and an energy concentration ratio of a high order mode which is spurious is not more than about 99.5%.
Abstract translation: 弹性波装置包括:高声速膜,其被构造成使得体声波以比在压电膜中传播的弹性波更高的声速传播;低声速膜,构造成使得体波以较低的声速传播 比在压电膜中传播的体波层叠在高声速膜上,将压电膜层叠在低声速膜上,并且将1DT电极层叠在压电膜的一个表面上。 在上部结构部分中,作为弹性波的主模式的能量集中率为99.9%以上,散点的高阶模态的能量集中率为99.5%以下。
-
公开(公告)号:US20240007144A1
公开(公告)日:2024-01-04
申请号:US18469817
申请日:2023-09-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Morio TAKEUCHI , Syunsuke KIDO
IPC: H04B1/7163 , H03F3/19 , H03H9/54 , H03H7/01 , H03H9/64
CPC classification number: H04B1/71637 , H03F3/19 , H03H9/54 , H03H7/0115 , H03H9/64 , H03F2200/165 , H03F2200/451 , H03F2200/294
Abstract: A radio frequency circuit includes a first acoustic wave filter that is connected to a common terminal and includes a first acoustic wave resonator, a first LC filter that is connected to the common terminal via the first acoustic wave filter and includes at least one of an inductor or a capacitor, a second acoustic wave filter that is connected to the common terminal and includes a second acoustic wave resonator, and a second LC filter that is connected to the common terminal via the second acoustic wave filter and includes at least one of an inductor or a capacitor.
-
公开(公告)号:US20230253989A1
公开(公告)日:2023-08-10
申请号:US18301995
申请日:2023-04-18
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Syunsuke KIDO , Hirotsugu MORI
CPC classification number: H04B1/0057 , H04B1/163
Abstract: A multiplexer includes first, second, and third filters. The first filter has a first pass band including a first band to send a signal. The second filter has a second pass band including a second band to send a signal. The third filter has a third pass band including a third band. An unwanted frequency of a second-order or fourth-order distortion mode, generated when a first transmitted signal of the first band and a second transmitted signal of the second band are simultaneously transmitted, is included in at least one of the first, second, and third pass bands. An unwanted frequency of a third-order distortion mode, generated when the first transmitted signal and the second transmitted signal are simultaneously transmitted, is included in at least one of the first, second, and third pass bands. The first filter is a BAW filter. The second filter is a SAW filter.
-
公开(公告)号:US20230037734A1
公开(公告)日:2023-02-09
申请号:US17968828
申请日:2022-10-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Munehisa WATANABE , Hideki IWAMOTO , Hajime KANDO , Syunsuke KIDO
IPC: H03H9/02 , H03H3/02 , H03H3/04 , H03H3/08 , H01L41/04 , H01L41/047 , H03H9/54 , H03H3/10 , H01L41/18 , H01L41/22
Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
-
公开(公告)号:US20220352874A1
公开(公告)日:2022-11-03
申请号:US17869808
申请日:2022-07-21
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Kentaro NAKAMURA , Shinichi OKADA , Syunsuke KIDO
Abstract: An acoustic wave device includes a substrate, a first resonator, a second resonator, and a shared reflector. The second resonator is adjacent to the first resonator and has different frequency characteristics different than the first resonator. The first resonator includes a first interdigital transducer electrode. The second resonator includes a second interdigital transducer electrode. The shared reflector has frequency characteristics that are the same as both frequency characteristics of the first resonator and frequency characteristics of the second resonator or between the frequency characteristics of the first resonator and the frequency characteristics of the second resonator. a higher-order mode frequency of the first resonator and a higher-order mode frequency of the second resonator coincides. When the number of electrode fingers of the shared reflector is even, an electrode finger facing the shared reflector in the first interdigital transducer electrode and an electrode finger facing the shared reflector in the second interdigital transducer electrode have the same polarity. When the number of electrode fingers of the shared reflector is odd, an electrode finger facing the shared reflector in the first interdigital transducer electrode and an electrode finger facing the shared reflector in the second interdigital transducer electrode have opposite polarities.
-
公开(公告)号:US20210315096A1
公开(公告)日:2021-10-07
申请号:US17221310
申请日:2021-04-02
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Hiroshi MATSUBARA , Masanori KATO , Yukiteru SUGAYA , Syunsuke KIDO
Abstract: A filter includes a first input/output electrode and the second input/output electrode, and is arranged on a first main surface of a mounting substrate. The mounting substrate includes a first land electrode, a second land electrode, a ground terminal, and a plurality of via conductors. The first land electrode is connected to the first input/output electrode. The second land electrode is connected to the second input/output electrode. The ground terminal is located closer to a second main surface side than the first main surface in a thickness direction of the mounting substrate. The plurality of via conductors is arranged between the first main surface and the second main surface, and is connected to the ground terminal. The plurality of via conductors is located between the first land electrode and the second land electrode in a plan view from the thickness direction of the mounting substrate.
-
公开(公告)号:US20200382160A1
公开(公告)日:2020-12-03
申请号:US16887169
申请日:2020-05-29
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Morio TAKEUCHI , Syunsuke KIDO
IPC: H04B1/7163 , H03F3/19 , H03H9/54 , H03H7/01
Abstract: A radio frequency circuit includes a first acoustic wave filter that is connected to a common terminal and includes a first acoustic wave resonator, a first LC filter that is connected to the common terminal via the first acoustic wave filter and includes at least one of an inductor or a capacitor, a second acoustic wave filter that is connected to the common terminal and includes a second acoustic wave resonator, and a second LC filter that is connected to the common terminal via the second acoustic wave filter and includes at least one of an inductor or a capacitor.
-
公开(公告)号:US20200382081A1
公开(公告)日:2020-12-03
申请号:US16887221
申请日:2020-05-29
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Morio TAKEUCHI , Syunsuke KIDO
Abstract: A radio-frequency circuit includes a first switch which includes a common terminal, a first selection terminal, and a second selection terminal, and switches between connecting the common terminal and the first selection terminal and connecting the common terminal and the second selection terminal; a first low-noise amplifier including an input terminal connected to the first selection terminal, and a second low-noise amplifier including an input terminal connected to the second selection terminal. The frequency band in which the first low-noise amplifier amplifies a radio-frequency signal by at least a predetermined gain includes the frequency band in which the second low-noise amplifier amplifies a radio-frequency signal by at least a predetermined gain.
-
-
-
-
-
-
-
-
-