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    ACOUSTIC WAVE DEVICE
    1.
    发明申请
    ACOUSTIC WAVE DEVICE 有权

    公开(公告)号：US20230040371A1

    公开(公告)日：2023-02-09

    申请号：US17969731

    申请日：2022-10-20

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Munehisa WATANABE ,  Katsuya DAIMON ,  Hideki IWAMOTO

    IPC: H03H9/02 ,  H03H9/25 ,  H03H9/145

    Abstract: An acoustic wave device includes a piezoelectric substrate and an IDT electrode. The IDT electrode includes a center area and first and second edge areas. Areas including the first and second edge areas and overlapping the areas in an acoustic-wave propagation direction include first and second expansion edge areas. First and second acoustic-velocity adjusters are provided in the first and second expansion edge areas. The first and second acoustic-velocity adjusters respectively includes first and second end portions and third and fourth end portions. The first to fourth end portions are located at outer sides of the first and second edge areas. End portions in at least one of two pairs including a pair of first and third end portions and a pair of second and fourth end portions do not overlap each other in a direction in which electrode fingers extend.

    ELASTIC WAVE DEVICE AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    ELASTIC WAVE DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    弹性波装置及其制造方法

    公开(公告)号：US20160294354A1

    公开(公告)日：2016-10-06

    申请号：US15180234

    申请日：2016-06-13

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Shin SAIJO ,  Hisashi YAMAZAKI ,  Koji YAMAMOTO ,  Seiji KAI ,  Munehisa WATANABE

    IPC: H03H9/145 ,  H03H3/08

    CPC classification number: H03H9/14544 ,  H03H3/08 ,  H03H9/02574 ,  H03H9/02992 ,  H03H9/0514 ,  H03H9/0542 ,  H03H9/0552 ,  H03H9/1014 ,  H03H9/1071 ,  H03H9/132 ,  H03H9/145

    Abstract: In an elastic wave device, a multilayer film including a piezoelectric thin film is provided on a support substrate, an interdigital transducer electrode is provided on one surface of the piezoelectric thin film, a wiring electrode is connected to the interdigital transducer electrode, the wiring electrode includes a lead electrode portion and a pad electrode portion, an external connection terminal is located above the pad electrode portion, the external connection terminal is electrically connected to the pad electrode portion, and the external connection terminal is bonded onto the pad electrode portion on the support substrate so that at least the piezoelectric thin film of the multilayer film is not present below the pad electrode portion.

    Abstract translation: 在弹性波装置中，在支撑基板上设置包括压电薄膜的多层膜，在压电薄膜的一个表面上设置叉指式换能器电极，将布线电极连接到叉指式换能器电极，布线电极 包括引线电极部分和焊盘电极部分，外部连接端子位于焊盘电极部分的上方，外部连接端子电连接到焊盘电极部分，并且外部连接端子接合到焊盘电极部分上 支撑基板，使得至少多层膜的压电薄膜不存在于焊盘电极部分的下方。

    PIEZOELECTRIC DEVICE
    3.
    发明申请
    PIEZOELECTRIC DEVICE 有权

    公开(公告)号：US20230027753A1

    公开(公告)日：2023-01-26

    申请号：US17960161

    申请日：2022-10-05

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Munehisa WATANABE ,  Yasumasa TANIGUCHI ,  Katsuya DAIMON

    IPC: H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/25

    Abstract: A piezoelectric device includes a support substrate, an intermediate layer on the support substrate, a piezoelectric layer on the intermediate layer, a functional element on the piezoelectric layer, an insulation layer, and a wiring electrode. The insulation layer is on the support substrate and in contact with the intermediate layer and the piezoelectric layer. The wiring electrode extends from a top of the insulation layer to a top of the piezoelectric layer and is connected to the functional element. The insulation layer includes first and second regions. The first region is thinner than a thickness of the multilayer body. The second region connects the first region and the multilayer body, and includes a portion slanted from the first region toward an upper surface of the piezoelectric layer. The second region of the insulation layer does not extend to the top of the piezoelectric layer.

    ACOUSTIC WAVE DEVICE
    5.
    发明公开
    ACOUSTIC WAVE DEVICE 审中-公开

    公开(公告)号：US20230370041A1

    公开(公告)日：2023-11-16

    申请号：US18358281

    申请日：2023-07-25

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Kazunori INOUE ,  Yuta ISHII ,  Munehisa WATANABE ,  Ventsislav YANTCHEV ,  Patrick TURNER ,  Bryant GARCIA

    IPC: H03H9/02 ,  H03H9/17 ,  H03H9/56 ,  H03H9/13

    CPC classification number: H03H9/02055 ,  H03H9/02031 ,  H03H9/133 ,  H03H9/173 ,  H03H9/568

    Abstract: An acoustic wave device is provided that includes a support substrate, a piezoelectric layer on the support substrate, a first electrode and a second electrode on the piezoelectric layer in a lamination direction of the support substrate and the piezoelectric layer, the first and the second electrodes are opposed in a first direction that intersects with the lamination direction; and a space that defines either a cavity in a portion of the support substrate or an air gap between the support substrate and the piezoelectric layer. A portion of each of the first and the second electrodes overlaps the space in a plan view in the lamination direction. A first roughness of a major surface of the support substrate, opposite from the piezoelectric layer, is greater than a second roughness of a major surface of the piezoelectric layer on which the first and second electrodes are located.

    PIEZOELECTRIC DEVICE
    6.
    发明申请
    PIEZOELECTRIC DEVICE 有权

    公开(公告)号：US20230032680A1

    公开(公告)日：2023-02-02

    申请号：US17961604

    申请日：2022-10-07

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Munehisa WATANABE ,  Yasumasa TANIGUCHI ,  Katsuya DAIMON ,  Takuro OKADA

    IPC: H03H9/25 ,  H03H9/02

    Abstract: A piezoelectric device includes a support substrate, an intermediate layer on the support substrate in a first region, a piezoelectric layer on the intermediate layer, a functional element on the piezoelectric layer, and an insulating layer. The insulating layer is located on the support substrate in a second region adjacent to the first region. A surface roughness of the support substrate in the second region is greater than a surface roughness of the support substrate in the first region.

    ACOUSTIC WAVE DEVICE
    8.
    发明申请
    ACOUSTIC WAVE DEVICE 有权

    公开(公告)号：US20250038730A1

    公开(公告)日：2025-01-30

    申请号：US18918786

    申请日：2024-10-17

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Munehisa WATANABE ,  Kazunori INOUE

    IPC: H03H9/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/56

    Abstract: An acoustic wave device includes acoustic wave resonators including one or more series arm resonators and one or more parallel arm resonators. The acoustic wave resonators include a support including a support substrate with a thickness in a first direction, a piezoelectric layer in the first direction of the support, an IDT electrode on one principal surface of the piezoelectric layer, a first dielectric film on the one principal surface, and a second dielectric film on the first dielectric film. A thickness of one of the first dielectric films is larger than a thickness of another one of the first dielectric films. A thickness of one of the second dielectric films is smaller than a thickness of another one of the second dielectric films.

    ACOUSTIC WAVE DEVICE, FILTER, MULTIPLEXER, RADIO-FREQUENCY FRONT-END CIRCUIT, AND COMMUNICATION DEVICE
    10.
    发明申请
    ACOUSTIC WAVE DEVICE, FILTER, MULTIPLEXER, RADIO-FREQUENCY FRONT-END CIRCUIT, AND COMMUNICATION DEVICE 审中-公开

    公开(公告)号：US20200091892A1

    公开(公告)日：2020-03-19

    申请号：US16686348

    申请日：2019-11-18

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Munehisa WATANABE ,  Hideki IWAMOTO ,  Harunobu HORIKAWA

    IPC: H03H9/145 ,  H03H9/64 ,  H03H9/72 ,  H03H9/02 ,  H01L41/047 ,  H04B1/00

    Abstract: In an acoustic wave device, a piezoelectric body is directly or indirectly provided on a high acoustic velocity material layer, an interdigital transducer electrode is directly or indirectly provided on the piezoelectric body, the interdigital transducer electrode includes a first busbar, a second busbar spaced away from the first busbar, a plurality of first electrode fingers, and a plurality of second electrode fingers, and a weighting is applied to the interdigital transducer electrode by providing a floating electrode finger not electrically connected to the first busbar or the second busbar or applied by providing an electrode finger formed by metallizing a gap between the first electrode fingers or a gap between the second electrode fingers to integrate the first electrode fingers or the second electrode fingers.

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