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公开(公告)号：US20250158593A1
公开(公告)日：2025-05-15
申请号：US19024548
申请日：2025-01-16
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kentaro NAKAMURA , Takuya YABU
Abstract: An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer, and an IDT electrode on the piezoelectric layer. The IDT electrode includes first and second electrode fingers with a circular arc or an elliptical arc shape. When a virtual line connecting tip ends of the second electrode fingers is a first envelope, a virtual line connecting tip ends of the first electrode fingers is a second envelope, and a center of a circle including the circular arc or a midpoint of focal points of an ellipse including the elliptical arc of the first and second electrode fingers is a fixed point, a straight line connecting the fixed point and the tip end of the second electrode finger is not parallel to the first envelope, and a straight line connecting the fixed point and the tip end of the first electrode finger is not parallel to the second envelope.
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公开(公告)号：US20240048117A1
公开(公告)日：2024-02-08
申请号：US18381672
申请日：2023-10-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kentaro NAKAMURA , Hideki IWAMOTO
CPC classification number: H03H9/02228 , H03H9/02559 , H03H9/02574 , H03H9/14541
Abstract: An acoustic wave device includes a support substrate, an intermediate layer on the support substrate, a piezoelectric layer on the intermediate layer and including first and second principal surfaces opposed to each other, a first IDT electrode on the first principal surface of the piezoelectric layer, and a second IDT electrode on the second principal surface of the piezoelectric layer to be opposed to the first IDT electrode. The support substrate is a quartz substrate with Euler angles (ϕ, θ, ψ) of about 0°±10°, 70°≤θ≤170°, 90°±10°.
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公开(公告)号：US20240243728A1
公开(公告)日：2024-07-18
申请号：US18420915
申请日：2024-01-24
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takuro OKADA , Hideki IWAMOTO , Kentaro NAKAMURA
CPC classification number: H03H9/6453 , H03H9/02559 , H03H9/02637 , H03H9/02866 , H03H9/145 , H03H9/6483
Abstract: A filter device includes at least one first acoustic wave resonator and at least one second acoustic wave resonator. The at least one first acoustic wave resonator includes a first piezoelectric substrate and first and second IDT electrodes. The first piezoelectric substrate includes a piezoelectric layer with first and second main surfaces facing each other. The first IDT electrode is on the first main surface. The second IDT electrode is on the second main surface and faces the first IDT electrode. The at least one second acoustic wave resonator includes a second piezoelectric substrate and a third IDT electrode. The second piezoelectric substrate includes a piezoelectric layer with third and fourth main surfaces facing each other. The third IDT electrode is on one of the third and fourth main surfaces.
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公开(公告)号：US20230370046A1
公开(公告)日：2023-11-16
申请号：US18224091
申请日：2023-07-20
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Tetsuya KIMURA , Kentaro NAKAMURA
CPC classification number: H03H9/13 , H03H9/25 , H03H9/173 , H03H9/14541 , H03H9/02039
Abstract: An acoustic wave device includes a scandium-containing aluminum nitride film and electrodes on at least one of first and second principal surfaces of the scandium-containing aluminum nitride film. The scandium-containing aluminum nitride film includes areas in which a crystal axis is deviated with respect to remaining portions of the scandium-containing aluminum nitride film.
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公开(公告)号：US20230246627A1
公开(公告)日：2023-08-03
申请号：US18131389
申请日：2023-04-06
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Junji YAMAUCHI , Kentaro NAKAMURA , Katsuya DAIMON
CPC classification number: H03H9/02574 , H03H9/25
Abstract: An acoustic wave device includes a support substrate, a quartz-crystal layer provided directly or indirectly on the support substrate, a piezoelectric layer on the quartz-crystal layer, and an IDT electrode on the piezoelectric layer. When λ represents a wavelength defined by an electrode finger pitch of the IDT electrode, a thickness of the quartz-crystal layer is about 0.2λ or more and about 0.4λ or less, and the piezoelectric layer has a thickness smaller than the thickness of the quartz-crystal layer.
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Patent Agency Ranking
公开(公告)号：US20240049605A1
公开(公告)日：2024-02-08
申请号：US18382604
申请日：2023-10-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kentaro NAKAMURA , Tetsuya KIMURA
CPC classification number: H10N30/85 , H03H9/02133 , H03H9/02228 , H03H9/02566 , H03H9/02818
Abstract: An acoustic wave device includes a scandium-containing aluminum nitride film (ScAlN film), and an electrode on the ScAlN film. The ScAlN film includes at least one portion where a crystal orientation toward 90° from a crystal c-axis direction is rotated about 30°±5° or rotated about 15°±5°, the crystal c-axis direction being a film thickness direction of the ScAlN film or substantially a film thickness direction of the ScAlN film.
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公开(公告)号：US20230370042A1
公开(公告)日：2023-11-16
申请号：US18226289
申请日：2023-07-26
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Tetsuya KIMURA , Kentaro NAKAMURA
CPC classification number: H03H9/02157 , H03H9/173 , H03H9/133
Abstract: A bulk acoustic wave device includes a scandium-containing aluminum nitride film on a first electrode on a substrate, and a second electrode on the scandium-containing aluminum nitride film, the first electrode and the second electrode overlapping each other with the scandium-containing aluminum nitride film interposed therebetween. In the scandium-containing aluminum nitride film, along a thickness direction, in a first area on a first electrode side, a third area on a second electrode side, and a second area as a center area in the thickness direction between the first area and the third area, an orientation ratio in the first area is lower than an orientation ratio in the second area, or an orientation ratio in the third area is higher than the orientation ratio in the second area.
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公开(公告)号：US20230353124A1
公开(公告)日：2023-11-02
申请号：US18220307
申请日：2023-07-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kentaro NAKAMURA , Katsuya DAIMON
CPC classification number: H03H9/25 , H03H9/02574 , H03H9/14541 , H03H9/02559 , H03H9/171 , H03H9/64
Abstract: An acoustic wave device includes a crystal substrate, a silicon nitride film on the crystal substrate, a lithium tantalate layer on the silicon nitride film, and an interdigital transducer electrode on the lithium tantalate layer and including multiple first and second electrode fingers.
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公开(公告)号：US20230344405A1
公开(公告)日：2023-10-26
申请号：US18217678
申请日：2023-07-03
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Katsuya DAIMON , Kentaro NAKAMURA
CPC classification number: H03H9/02574 , H03H9/02559 , H03H9/02637 , H03H9/02866 , H03H9/145 , H03H9/25
Abstract: An acoustic wave device includes a crystal substrate, an aluminum oxide layer on the crystal substrate, a lithium tantalate layer on the aluminum oxide layer, and an interdigital transducer electrode on the lithium tantalate layer and including multiple first and second electrode fingers.
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公开(公告)号：US20210384924A1
公开(公告)日：2021-12-09
申请号：US17411145
申请日：2021-08-25
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kentaro NAKAMURA , Noriyoshi OTA
Abstract: A filter includes series resonators in a signal path. An IDT electrode included in the series resonators includes at least either first electrode fingers including variant portions or second electrode fingers not including variant portions. In the IDT electrode included in one or more series resonators of the series resonators, a direction that connects the respective other ends of a plurality of electrode fingers intersects an acoustic wave propagation direction. In a first portion and a second portion of the IDT electrode, the first and second electrode fingers are arranged in a predetermined order.
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