Spacer structure for image forming apparatus
    31.
    发明授权
    Spacer structure for image forming apparatus 失效
    图像形成装置的间隔结构

    公开(公告)号:US07449827B2

    公开(公告)日:2008-11-11

    申请号:US11288189

    申请日:2005-11-29

    申请人: Nobuhiro Ito

    发明人: Nobuhiro Ito

    IPC分类号: H01J1/62 H01J63/04

    摘要: In a spacer having concave/convex portions to prevent short-time charging in a flat type image forming apparatus in which an electron source substrate and an anode substrate are arranged so as to face each other through the spacer, the charging upon long-time driving due to the concave/convex portions is suppressed. In the spacer in which the surface of an insulating substrate having a rough surface is coated with a high resistance film, the high resistance film has double layers of a low resistance region locating on the substrate side and a high resistance region locating on the front surface side, and a thickness (t) of high resistance film on the slant surface of each of the concave/convex portions and a thickness (s) of high resistance region are set to (t≧dp+λ≧s) for the primary electron penetration length (dp) and the ionization electron diffusion length (λ).

    摘要翻译: 在具有凹凸部的隔片中,为了防止在平面型图像形成装置中进行短时间的充电,其中电子源基板和阳极基板通过间隔件彼此相对配置,长时间驱动时的充电 由于凹/凸部被抑制。 在具有粗糙表面的绝缘基板的表面涂覆有高电阻膜的间隔件中,高电阻膜具有位于基板侧的低电阻区域和位于前表面的高电阻区域的双层 并且每个凹/凸部的倾斜表面上的高电阻膜的厚度(t)和高电阻区域的厚度被设置为(t> = dp +λ> = s) 初级电子穿透长度(dp)和电离电子扩散长度(λ)。

    Method of Deuteration Using Mixed Catalyst
    32.
    发明申请
    Method of Deuteration Using Mixed Catalyst 有权
    使用混合催化剂的氘化方法

    公开(公告)号:US20080234488A1

    公开(公告)日:2008-09-25

    申请号:US10585629

    申请日:2004-12-21

    摘要: The subject of the present invention is to provide a method for deuteration, which can obtain a compound having an aromatic ring and/or a heterocyclic ring at an improved deuteration ratio. The present invention relates to a method for deuteration of a compound having an aromatic ring and/or a heterocyclic ring, comprising reacting the compound having an aromatic ring and/or a heterocyclic ring with a heavy hydrogen source in the presence of an activated mixed catalyst of not less than two kinds of catalysts selected from among a palladium catalyst, a platinum catalyst, a rhodium catalyst, an iridium catalyst, a ruthenium catalyst, a nickel catalyst and a cobalt catalyst.

    摘要翻译: 本发明的主题是提供一种氘化方法,其可以以改善的氘化比获得具有芳环和/或杂环的化合物。 本发明涉及一种具有芳环和/或杂环的化合物的氘化方法,包括在活化的混合催化剂存在下使具有芳环和/或杂环的化合物与重氢源反应 选自钯催化剂,铂催化剂,铑催化剂,铱催化剂,钌催化剂,镍催化剂和钴催化剂中的不少于两种催化剂。

    Membrane switch, method for manufacturing membrane switch, and contact switch
    34.
    发明授权
    Membrane switch, method for manufacturing membrane switch, and contact switch 失效
    膜开关,薄膜开关制造方法和接触开关

    公开(公告)号:US07186938B2

    公开(公告)日:2007-03-06

    申请号:US11207106

    申请日:2005-08-18

    申请人: Nobuhiro Ito

    发明人: Nobuhiro Ito

    IPC分类号: H01H1/10

    摘要: A pressure detection switch includes a membrane switch and a key pad arranged on the membrane switch. The membrane switch includes first and second insulation sheets arranged to face each other. An electric circuit, which includes a first electrode and a voltage-dividing resistor, and a resist film, which protects the electric circuit, are formed on the lower surface of the first insulation sheet and above the second insulation sheet. The resist film has an opening through which the voltage-dividing resistor is exposed from the lower surface of the first insulation sheet.

    摘要翻译: 压力检测开关包括薄膜开关和布置在薄膜开关上的键盘。 膜开关包括彼此相对布置的第一和第二绝缘片。 在第一绝缘片的下表面和第二绝缘片上方形成有包括第一电极和分压电阻器的电路以及保护电路的抗蚀剂膜。 抗蚀剂膜具有从第一绝缘片的下表面露出分压电阻的开口。

    Membrane switch, method for manufacturing membrane switch, and contact switch
    35.
    发明申请
    Membrane switch, method for manufacturing membrane switch, and contact switch 失效
    膜开关,薄膜开关制造方法和接触开关

    公开(公告)号:US20060042924A1

    公开(公告)日:2006-03-02

    申请号:US11207106

    申请日:2005-08-18

    申请人: Nobuhiro Ito

    发明人: Nobuhiro Ito

    IPC分类号: H01H1/10

    摘要: A pressure detection switch includes a membrane switch and a key pad arranged on the membrane switch. The membrane switch includes first and second insulation sheets arranged to face each other. An electric circuit, which includes a first electrode and a voltage-dividing resistor, and a resist film, which protects the electric circuit, are formed on the lower surface of the first insulation sheet and above the second insulation sheet. The resist film has an opening through which the voltage-dividing resistor is exposed from the lower surface of the first insulation sheet.

    摘要翻译: 压力检测开关包括薄膜开关和布置在薄膜开关上的键盘。 膜开关包括彼此相对布置的第一和第二绝缘片。 在第一绝缘片的下表面和第二绝缘片上方形成有包括第一电极和分压电阻器的电路以及保护电路的抗蚀剂膜。 抗蚀剂膜具有从第一绝缘片的下表面露出分压电阻的开口。

    Method for deuteration or tritiation of heterocyclic ring
    36.
    发明申请
    Method for deuteration or tritiation of heterocyclic ring 有权
    杂环氘化或氚化的方法

    公开(公告)号:US20060025596A1

    公开(公告)日:2006-02-02

    申请号:US10534344

    申请日:2003-11-07

    摘要: The present invention relates to a method for deuteration of a heterocyclic ring, which comprises subjecting a compound having a heterocyclic ring to sealed refluxing state in a deuterated solvent in the presence of an activated catalyst selected form a palladium catalyst, a platinum catalyst, a rhodium catalyst, a ruthenium catalyst, a nickel catalyst and a cobalt catalyst. In accordance with a method of the present invention, a hydrogen atom belonging to a heterocyclic ring of a compound having a heterocyclic ring can be very efficiently deuterated because temperature of deuteration reaction can be maintained at higher than boiling point of the solvent. Further, a method for deuteration of the present invention can be applied widely to deuteration of various compounds having a heterocyclic ring which are liable to decomposition under supercritical conditions or acidic conditions, leading to industrial and efficient deuteration of a compound having a heterocyclic ring.

    摘要翻译: 本发明涉及杂环的氘化方法,该方法包括在选自钯催化剂,铂催化剂,铑的活化催化剂的存在下,使具有杂环的化合物在氘代溶剂中密封回流 催化剂,钌催化剂,镍催化剂和钴催化剂。 根据本发明的方法,具有杂环的化合物的杂环的氢原子可以非常有效地氘化,因为氘代反应的温度可以保持在高于溶剂沸点的温度。 此外,本发明的氘化方法可以广泛地应用于具有杂环的各种化合物的猝灭,所述化合物在超临界条件或酸性条件下容易分解,导致具有杂环的化合物的工业和高效氘化。

    Electron beam apparatus and spacer for reducing electrostatic charge
    37.
    发明授权
    Electron beam apparatus and spacer for reducing electrostatic charge 失效
    用于减少静电电荷的电子束装置和间隔物

    公开(公告)号:US06927533B1

    公开(公告)日:2005-08-09

    申请号:US09413773

    申请日:1999-10-07

    摘要: An electron beam apparatus including a hermetic container provided with an electron source, in which, when a first member is arranged in the hermetic container, at least part of the first member is coated with a film, and the film is configured in such a manner that it includes two regions, a first region and a second region different in electron density from the first region and the second region forms a network in the first region. This three-dimensional network structure allows a member being charged to be preferably controlled. Thereby, it is possible to control the effects of a member being charged which is used in an electron beam apparatus.

    摘要翻译: 一种电子束装置,包括设置有电子源的密封容器,其中当第一构件布置在密封容器中时,第一构件的至少一部分涂覆有膜,并且膜以这种方式构造 它包括两个区域,第一区域和与第一区域不同的电子密度的第二区域和第二区域在第一区域中形成网络。 这种三维网络结构允许优选地控制被充电的部件。 由此,可以控制在电子束装置中使用的被充电部件的效果。

    Spacer structure having a surface which can reduce secondaries
    38.
    发明授权
    Spacer structure having a surface which can reduce secondaries 失效
    间隔结构具有可以减少二次的表面

    公开(公告)号:US06809469B1

    公开(公告)日:2004-10-26

    申请号:US09413774

    申请日:1999-10-07

    IPC分类号: H01J162

    摘要: A spacer on which static electricity is restricted and an electron beam apparatus in which the spacer is provided. In the electron beam apparatus comprising an electron source provided with electron emission devices, a face plate provided with anodes and spacers installed between the electron source and the face plate, unevenness is formed on the surface of the spacer substrate, and further a thin film which has a smaller thickness than a roughness. This makes possible the restriction of incident angle multiplication coefficient for the primary electrons whose energy is lower than the second cross-point energy of a resistive film. The electron beam apparatus provided with the above spacer is excellent in display definition and long-term reliability since the displacement of light emission points and the creeping discharge accompanying the static electricity can be restricted due to the spacer.

    摘要翻译: 静电受限制的间隔物和设置间隔物的电子束装置。 在包括设置有电子发射装置的电子源的电子束装置中,设置有设置在电子源和面板之间的阳极和间隔物的面板在间隔基板的表面上形成不均匀性, 具有比粗糙度更小的厚度。 这使得对于能量低于电阻膜的第二交叉点能量的一次电子的入射角倍增系数的限制成为可能。 设置有上述间隔物的电子束装置由于间隔件而可以限制发光点的位移和伴随静电的沿面放电的显示定义和长期可靠性。

    Electron beam apparatus and image forming apparatus
    39.
    发明授权
    Electron beam apparatus and image forming apparatus 失效
    电子束装置和图像形成装置

    公开(公告)号:US06600263B1

    公开(公告)日:2003-07-29

    申请号:US09694271

    申请日:2000-10-24

    申请人: Nobuhiro Ito

    发明人: Nobuhiro Ito

    IPC分类号: H01J902

    摘要: The present invention is concerned with an electron beam apparatus comprising: a hermetic container; an electron source disposed within the hermetic container; and a spacer; wherein the spacer includes at least a region where a layer containing fine particles exists, a sheet resistance measured at the surface of the region of the spacer is 107 &OHgr;/□ or more, and the fine particles are 1000 Å or less in the average diameter of the particles and includes at least metal elements. The electron beam apparatus exhibits the excellent display quality which suppresses the displacement of the light emission point with the charge and the creeping discharge, and the long-period reliability.

    摘要翻译: 本发明涉及电子束装置,包括:密封容器; 设置在密封容器内的电子源; 和间隔物; 其中,所述间隔物至少包含存在有微粒子的层的区域,在所述间隔物的区域的表面测量的薄层电阻为107Ω/□以上,所述微粒的平均直径为1000以下 的颗粒并且至少包括金属元素。 电子束装置表现出优异的显示质量,其抑制了发光点随着充电和沿面放电的位移以及长周期的可靠性。

    Manufacturing method of spacer for electron-beam apparatus and manufacturing method of electron-beam apparatus
    40.
    发明授权
    Manufacturing method of spacer for electron-beam apparatus and manufacturing method of electron-beam apparatus 失效
    电子束装置用间隔物的制造方法及电子束装置的制造方法

    公开(公告)号:US06494757B2

    公开(公告)日:2002-12-17

    申请号:US09512265

    申请日:2000-02-24

    IPC分类号: H01J924

    摘要: In a manufacturing method of a spacer for an electron-beam apparatus which includes an airtight container and an electron source, the spacer is arranged in the airtight container. The method includes the step of heating and drawing a base material of the spacer to form a desired rough state on the surface of the base material, the step of heating and drawing the base material of the spacer to form the desired rough state and an electroconductive film on the surface of the base material, or the step of heating and drawing the base material of the spacer having the rough state on its surface. According to the present invention, the spacer having a surface structure which can suppress charging can be manufactured at a low cost, and an electron-beam apparatus such as an image-forming apparatus having a sufficient display luminance can also be manufactured.

    摘要翻译: 在包括气密容器和电子源的电子束装置间隔物的制造方法中,间隔件布置在气密容器中。 该方法包括加热和拉伸间隔物的基材以在基材的表面上形成所需的粗糙状态的步骤,加热和拉伸间隔物的基材以形成所需的粗糙状态和导电的步骤 或者在其表面上加热和拉伸具有粗糙状态的间隔物的基材的步骤。 根据本发明,可以以低成本制造具有能够抑制充电的表面结构的间隔物,并且还可以制造诸如具有足够的显示亮度的图像形成装置的电子束装置。