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249 条记录 (耗时 0.035 秒)

    MAGNETO-RESISTIVE EFFECT DEVICE, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM
    31.
    发明申请
    MAGNETO-RESISTIVE EFFECT DEVICE, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM 有权
    磁阻效应器件，薄膜磁头，头盖组件和硬盘系统

    公开(公告)号：US20080100968A1

    公开(公告)日：2008-05-01

    申请号：US11870097

    申请日：2007-10-10

    申请人： Koji SHIMAZAWA ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata

    发明人： Koji SHIMAZAWA ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F41/305 ,  Y10T29/49044 ,  Y10T29/49048

    摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction. The free layer functions such that the direction of magnetization changes depending on an external magnetic field. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor layer formed between the first and the second nonmagnetic metal layer. The semiconductor layer is an n-type oxide semiconductor. When the first and second nonmagnetic metal layers are formed in order, the first nonmagnetic metal layer is formed prior to the second nonmagnetic metal layer, and an anti-oxidizing layer is formed between the first and the semiconductor layer. The anti-oxidizing layer is formed of a material incapable of producing a Schottky barrier upon joining to the semiconductor layer. It is thus possible to achieve very favorable advantages of obtaining high MR performance without increasing the head noise, and holding back variations of device's area resistivity (AR), thereby making much more improvements in the reliability of film characteristics.

    摘要翻译： 本发明提供了一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），该结构包括间隔层，以及固定磁化层和自由层，间隔层介于 它们具有沿堆叠方向施加的感测电流。 自由层起着使得磁化方向取决于外部磁场的作用。 间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及形成在第一和第二非磁性金属层之间的半导体层。 半导体层是n型氧化物半导体。 当依次形成第一和第二非磁性金属层时，在第二非磁性金属层之前形成第一非磁性金属层，并且在第一和半导体层之间形成抗氧化层。 抗氧化层由与半导体层接合时不能产生肖特基势垒的材料形成。 因此，可以获得非常有利的优点，即不增加磁头噪声，并且抑制器件面积电阻率（AR）的变化，从而在膜特性的可靠性方面进一步提高，从而获得高MR性能。

    Thin film magnetic head, head gimbal assembly, and hard disk drive
    32.
    发明授权
    Thin film magnetic head, head gimbal assembly, and hard disk drive 失效
    薄膜磁头，头万向节装配和硬盘驱动器

    公开(公告)号：US07221546B2

    公开(公告)日：2007-05-22

    申请号：US10833162

    申请日：2004-04-28

    申请人： Koichi Terunuma ,  Koji Shimazawa ,  Yoshihiro Tsuchiya

    发明人： Koichi Terunuma ,  Koji Shimazawa ,  Yoshihiro Tsuchiya

    IPC分类号： G11B5/39 ,  G11B5/127

    CPC分类号： G11B5/31 ,  Y10T29/49041 ,  Y10T29/49046

    摘要： A longitudinal bias magnetic field control layer applies a counter bias magnetic field to a soft magnetic layer that is antiparallel (in opposite direction) to a longitudinal bias magnetic field. A magnitude of the counter bias magnetic field applied to the soft magnetic layer by the longitudinal bias magnetic field control layer is set smaller than that of the longitudinal bias magnetic field at a track center portion of the soft magnetic layer applied by a pair of bias magnetic field applying layers. A substantial longitudinal bias magnetic field is substantially applied to the soft magnetic layer in the same direction as that of the longitudinal bias magnetic field, and a magnitude of the substantial longitudinal bias magnetic field is maximum at both end portions of the soft magnetic layer and is weakened at the center portion of the soft magnetic layer.

    摘要翻译： 纵向偏置磁场控制层将反偏置磁场施加到与纵向偏置磁场反平行（相反方向）的软磁性层。 通过纵向偏置磁场控制层施加到软磁性层的反向偏置磁场的大小被设定为小于通过一对偏置磁铁施加的软磁性层的轨道中心部分处的纵向偏置磁场的大小 场施加层。 基本的纵向偏置磁场基本上与纵向偏置磁场的方向相同地施加到软磁性层，并且在软磁性层的两个端部处，基本的纵向偏置磁场的大小最大，并且是 在软磁性层的中心部分变弱。

    CPP-type magnetoresistance effect element having a pair of free layers
    35.
    发明授权
    CPP-type magnetoresistance effect element having a pair of free layers 有权
    CPP型磁阻效应元件具有一对自由层

    公开(公告)号：US08085512B2

    公开(公告)日：2011-12-27

    申请号：US12045927

    申请日：2008-03-11

    申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Koji Shimazawa ,  Tsutomu Chou

    发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Koji Shimazawa ,  Tsutomu Chou

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

    摘要： A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions depend upon an external magnetic field, the second magnetic layer being positioned between the first magnetic layer and the third magnetic layer, a first non-magnetic intermediate layer sandwiched between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer sandwiched between the second magnetic layer and the third magnetic layer, wherein the stack is adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack.

    摘要翻译： 磁场检测元件包括：堆叠，其包括其磁化方向取决于外部磁场的第一，第二和第三磁性层，第二磁性层位于第一磁性层和第三磁性层之间，第一非磁性层 夹在第一磁性层和第二磁性层之间的中间层和夹在第二磁性层和第三磁性层之间的第二非磁性中间层，其中该堆叠适于使得感测电流沿垂直的方向流动 到其膜表面; 以及偏置磁性层，其设置在所述堆叠的一侧，所述侧面与所述堆叠的空气支承表面相对。

    Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers
    36.
    发明授权
    Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers 有权
    磁阻元件包括耦合到一对屏蔽层的一对铁磁层

    公开(公告)号：US08023230B2

    公开(公告)日：2011-09-20

    申请号：US12289401

    申请日：2008-10-27

    申请人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

    发明人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

    摘要： A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers.

    摘要翻译： 磁阻元件包括一对屏蔽部分，以及设置在该对屏蔽部分之间的MR堆叠和偏置磁场施加层。 屏蔽部分别包括单个磁畴部分。 MR堆叠包括磁耦合到该对单个磁畴部分的一对铁磁层，以及设置在该对铁磁层之间的间隔层。 MR堆叠具有前端面，后端面和两个侧面。 磁阻元件还包括设置在一对单磁畴部分之间并且分别邻近MR堆叠的两个侧表面的两个磁通引导层。 两个磁通导向层中的每一个具有前端面和后端面。 偏置磁场施加层具有面向MR堆叠的后端面的前端面和两个导流层的各个后端面。

    Magneto-resistive element having a cap layer for canceling spin injection effect
    40.
    发明授权
    Magneto-resistive element having a cap layer for canceling spin injection effect 有权
    具有用于消除自旋注入效果的盖层的磁阻元件

    公开(公告)号：US07656621B2

    公开(公告)日：2010-02-02

    申请号：US11581478

    申请日：2006-10-17

    申请人： Koji Shimazawa ,  Daisuke Miyauchi ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

    发明人： Koji Shimazawa ,  Daisuke Miyauchi ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B2005/3996

    摘要： A magneto-resistive element has: a first stacked film assembly having a pinned layer, a spacer layer, and a free layer; a first electrode layer which is arranged such that the first layer is in contact with the first electrode layer on the other side of the first layer, the first electrode layer being made of a ferromagnetic material; and a second electrode layer which is arranged on a side that is opposite to the first electrode layer with regard to the first stacked film assembly. The first and second electrode layers are adapted to apply a sense current to the first stacked film assembly and the first layer in a direction that is perpendicular to layer surfaces. The first layer is made of gold, silver, copper, ruthenium, rhodium, iridium, chromium or platinum, or an alloy thereof.

    摘要翻译： 磁阻元件具有：具有钉扎层，间隔层和自由层的第一层叠膜组件; 第一电极层，被布置成使得第一层与第一层的另一侧上的第一电极层接触，第一电极层由铁磁材料制成; 以及相对于第一层叠膜组件布置在与第一电极层相对的一侧的第二电极层。 第一和第二电极层适于在垂直于层表面的方向上向第一堆叠膜组件和第一层施加感测电流。 第一层由金，银，铜，钌，铑，铱，铬或铂或其合金制成。