Abstract:
Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.
Abstract:
A phosphor and a method for making the phosphor are disclosed. In an embodiment a phosphor for emission of red light includes SrxCa1−xAlSiN3:Eu, wherein x is: 0.8
Abstract:
A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.
Abstract:
A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j−k−2l−3m−4n=w; 0.8≤t≤1; −3.5≤u≤4; 3.5≤v≤4; (−0.2)≤w≤0.2 and 0≤m 0.125 v.
Abstract:
Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.
Abstract:
A phosphor is disclosed. In an embodiment a phosphor includes an inorganic substance which includes, in its composition, at least an element D, an element Al, an element AX, an element SX and an element NX where D includes one, two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, Al includes one, two or more elements selected from the group consisting of divalent metals not included in D, SX includes one, two or more elements selected from the group consisting of tetravalent metals, AX includes one, two or more elements selected from the group consisting of trivalent metals, and NX includes one, two or more elements selected from the group consisting of O, N, S, C, Cl, and F, wherein the inorganic substance has the same crystal structure as Sr(SraCa1−a)Si2Al2N61.
Abstract:
A luminescent material mixture has a first luminescent material and a second luminescent material, wherein, under excitation with blue light, an emission spectrum of the first luminescent material has a relative intensity maximum in a yellowish-green region of the spectrum at a wavelength of greater than or equal to 540 nm and less than or equal to 560 nm and an emission spectrum of the second luminescent material has a relative intensity maximum in an orange-red region of the spectrum at a wavelength of greater than or equal to 600 nm and less than or equal to 620 nm.
Abstract:
A lighting module includes an optoelectronic semiconductor chip and a converter element for wavelength conversion. The optoelectronic semiconductor chip emits electromagnetic radiation including a dominant wavelength of 430 nm to 450 nm. The converter element includes a first phosphor and a second phosphor. The first phosphor is a garnet phosphor. The first phosphor emits electromagnetic radiation including a wavelength from the blue-green spectral range. The second phosphor is a nitrido-silicate phosphor. The second phosphor emits electromagnetic radiation including a wavelength from the orange-red spectral range.
Abstract:
A phosphor and a lighting device are disclosed. In an embodiment a lighting device includes a first phosphor disposed in a beam path of the primary radiation source, wherein the first phosphor has the formula Sr(SraM1−a)Si2Al2(N,X)6:D,A,B,E,G,L, wherein element M is selected from Ca, Ba, Mg or combinations thereof, wherein element D is one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals or Yb, wherein element A is selected from divalent metals different than those of the elements M and D, wherein element B is selected from trivalent metals, wherein element E is selected from monovalent metals, wherein element G is selected from tetravalent elements, wherein element L is selected from trivalent elements, wherein element X is selected from O or halogen, and wherein a parameter a is between 0.6 and 1.0.