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1.发明申请公开(公告)号：US20200332182A1
公开(公告)日：2020-10-22
申请号：US16911050
申请日：2020-06-24
发明人： Tim Fiedler , Sonja Tragl , Stefan Lange
摘要： Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.
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公开(公告)号：US10738238B2
公开(公告)日：2020-08-11
申请号：US15556279
申请日：2016-03-01
发明人： Tim Fiedler , Sonja Tragl , Stefan Lange
摘要： Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.
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公开(公告)号：US11021652B2
公开(公告)日：2021-06-01
申请号：US16911050
申请日：2020-06-24
发明人： Tim Fiedler , Sonja Tragl , Stefan Lange
摘要： Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.
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4.发明申请公开(公告)号：US20180044585A1
公开(公告)日：2018-02-15
申请号：US15556279
申请日：2016-03-01
发明人： Tim Fiedler , Sonja Tragl , Stefan Lange
摘要： Phospher particles with a Protective Layer and a method for producing phosphor particles with a protective layer are disclosed. In an embodiment the method includes treating Si-containing and/or Al-containing phosphor with an acid solution, wherein a pH value of the acid solution is maintained within a range of pH 3.5 to pH 7 for a period of at least 1 h, wherein an Si-containing layer is formed on the phosphor particles, wherein the Si-containing layer has a higher content of Si on a surface than the phosphor particles, and/or wherein an Al-containing layer is formed on the phosphor particles, wherein the Al-containing layer has a modified content of aluminum on the surface than the phosphor particles and tempering the treated phosphor particles at a temperature of at least 100° C. thereby producing the protective layer.
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5.发明申请公开(公告)号：US20160122636A1
公开(公告)日：2016-05-05
申请号：US14889405
申请日：2014-05-07
CPC分类号： C09K11/7734 , C01B21/0602 , C01B21/0605 , C01P2002/50 , C01P2002/52 , C01P2004/61 , C01P2004/62 , C04B35/584 , C04B2235/3224 , C04B2235/3852 , C04B2235/3873 , C04B2235/5409 , C04B2235/5436 , C04B2235/5463 , C04B2235/5481 , C09K11/0883 , C09K11/7728 , H01L33/502 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (Ca1-a-b-c-d-eZndMgeSrcBabXa)2Si5N8, wherein X is an activator that is selected from the group of the lanthanoids and wherein the following applies: 0
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公开(公告)号：US10964853B2
公开(公告)日：2021-03-30
申请号：US15762126
申请日：2016-09-19
发明人： Yi Zheng , Sonja Tragl , Juliane Kechele , Johanna Strube-Knyrim , Madis Raukas , Stefan Lange , Daniel Bichler
摘要： Wavelength converters including coarse particles/grains of a red nitride phosphor are disclosed. In some embodiments the red nitride phosphor is a (Ca,Sr,Ba)2Si5N8:Eu phosphor with a D50 grain size or a D50 particle size that is ≥5 microns. The red nitride phosphor may be encapsulated within an organic matrix or present in an inorganic matrix. In the latter case, the inorganic matrix may include fine grains with a D50 grain size
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公开(公告)号：US20180277720A1
公开(公告)日：2018-09-27
申请号：US15762126
申请日：2016-09-19
发明人： Yi Zheng , Sonja Tragl , Juliane Kechele , Johanna Strube-Knyrim , Madis Raukas , Stefan Lange , Daniel Bichler
CPC分类号： H01L33/502 , C09K11/025 , C09K11/0883 , C09K11/7734
摘要： Wavelength converters including coarse particles/grains of a red nitride phosphor are disclosed. In some embodiments the red nitride phosphor is a (Ca,Sr,Ba)2Si5N8:Eu phosphor with a D50 grain size or a D50 particle size that is ≥5 microns. The red nitride phosphor may be encapsulated within an organic matrix or present in an inorganic matrix. In the latter case, the inorganic matrix may include fine grains with a D50 grain size
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8.发明申请公开(公告)号：US20190048466A1
公开(公告)日：2019-02-14
申请号：US16079280
申请日：2017-03-01
发明人： Sonja Tragl , Tim Fiedler , Frank Jermann
摘要： A method for producing phosphor particles with at least one first protective layer and a phosphor particles having at least one protective layer are disclosed. In an embodiment, a method includes providing phosphor particles and applying at least one first protective layer to the surface of the phosphor particles, wherein the at least of first protective layer include depositing a first starting compound by a first atomic layer deposition on the surface of the phosphor particles and depositing a second starting compound by a second atomic layer deposition on the surface of the phosphor particles.
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公开(公告)号：US20180358514A1
公开(公告)日：2018-12-13
申请号：US15570699
申请日：2016-04-29
发明人： Sonja Tragl , Dominik Eisert , Stefan Lange , Nils Kaufmann , Alexander Martin , Krister Bergenek
CPC分类号： H01L33/502 , A61B1/0653 , A61B1/0661 , C09K11/77 , H01L33/486 , H01L33/50 , H01L33/505 , H01L33/58 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2933/0041 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.
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公开(公告)号：US10411170B2
公开(公告)日：2019-09-10
申请号：US15570699
申请日：2016-04-29
发明人： Sonja Tragl , Dominik Eisert , Stefan Lange , Nils Kaufmann , Alexander Martin , Krister Bergenek
摘要： A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.
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