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公开(公告)号：US11910625B2
公开(公告)日：2024-02-20
申请号：US17219954
申请日：2021-04-01
Inventor： Katsuya Nozawa , Takeyoshi Tokuhara , Nozomu Matsukawa , Sanshiro Shishido
CPC classification number: H10K39/32 , H04N5/33 , H04N25/709 , H10K10/29 , H10K30/211 , H10K30/30
Abstract: An imaging device includes a pixel electrode, a counter electrode that faces the pixel electrode, a first photoelectric conversion layer that is located between the pixel electrode and the counter electrode and that generates first signal charge, a second photoelectric conversion layer that is located between the first photoelectric conversion layer and the pixel electrode and that generates second signal charge, a first barrier layer that is located between the first photoelectric conversion layer and the second photoelectric conversion layer and that forms a first heterojunction barrier against the first signal charge in the first photoelectric conversion layer, and a charge accumulator that is electrically connected to the pixel electrode and that accumulates the first signal charge and the second signal charge.
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公开(公告)号：US11563057B2
公开(公告)日：2023-01-24
申请号：US17083376
申请日：2020-10-29
Inventor： Takeyoshi Tokuhara , Sanshiro Shishido , Yasuo Miyake , Shinichi Machida
IPC: H01L27/30 , H01L27/146
Abstract: An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 μm or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 μm or longer and shorter than 1.1 μm is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 μm or longer.
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公开(公告)号：US11233965B2
公开(公告)日：2022-01-25
申请号：US16437975
申请日：2019-06-11
Inventor： Shinichi Machida , Takeyoshi Tokuhara , Manabu Nakata , Sanshiro Shishido , Masaaki Yanagida , Masumi Izuchi
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.
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Patent Agency Ranking
公开(公告)号：US11114481B2
公开(公告)日：2021-09-07
申请号：US16118220
申请日：2018-08-30
Inventor： Yuuko Tomekawa , Takahiro Koyanagi , Takeyoshi Tokuhara
IPC: H01L29/78 , H01L21/28 , H01L27/108 , H01L21/02 , H01L27/146 , H01L49/02
Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer has a thickness of 10 nm or more. The first electrode contains carbon. At the interface between the dielectric layer and the first electrode, an elemental percentage of carbon is 30 atomic % or less.
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公开(公告)号：US10735652B2
公开(公告)日：2020-08-04
申请号：US16439834
申请日：2019-06-13
Inventor： Manabu Nakata , Shinichi Machida , Takeyoshi Tokuhara , Sanshiro Shishido , Masaaki Yanagida , Masumi Izuchi
Abstract: A method for controlling an imaging device having a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band, and that allows switching of an operation mode from the first mode to the second mode or from the second mode to the first mode. The method including causing the imaging device to perform imaging in the first mode or the second mode; determining, with a predetermined frequency or in response to a predetermined trigger, whether to maintain a current operation mode or switch the current operation mode on the basis of first image information in the first imaging wavelength band and second image information in the second imaging wavelength band; and in accordance with the determination, selectively maintaining the current operation mode or switching the current operation mode.
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公开(公告)号：US10707272B2
公开(公告)日：2020-07-07
申请号：US16570012
申请日：2019-09-13
Inventor： Takeyoshi Tokuhara , Shinichi Machida
Abstract: An imaging device includes a photoelectric converter including first and second electrodes, a photoelectric conversion layer therebetween, and a hole-blocking layer between the first electrode and the photoelectric conversion layer; and a signal detection circuit electrically connected to the first electrode. The hole-blocking material has an electron affinity lower than both a work function of the first conducting material and an electron affinity of the first photoelectric conversion material. The photoelectric conversion unit is applied with a voltage between the first and second electrodes, and responsive to the voltage within a range from a first voltage to a second voltage, shows that a density of current passing between the first and second electrodes when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident thereon. A difference between the first voltage and the second voltage is 0.5 V or more.
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公开(公告)号：US10367998B2
公开(公告)日：2019-07-30
申请号：US15871978
申请日：2018-01-15
Inventor： Manabu Nakata , Shinichi Machida , Takeyoshi Tokuhara , Sanshiro Shishido , Masaaki Yanagida , Masumi Izuchi
Abstract: A method is for controlling an imaging device that allows switching of an operation mode between a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band. The method includes: determining whether ambient light includes near-infrared light based on information obtained in the first mode and information obtained in the second mode; and maintaining or changing the operation mode.
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公开(公告)号：US09812491B2
公开(公告)日：2017-11-07
申请号：US15441308
申请日：2017-02-24
Inventor： Tokuhiko Tamaki , Takeyoshi Tokuhara
IPC: H01L31/113 , H01L27/146 , H04N5/355 , H04N5/369
CPC classification number: H01L27/14665 , H01L27/1461 , H01L27/14614 , H01L27/14627 , H01L27/14636 , H01L27/307 , H04N5/355 , H04N5/35563 , H04N5/3698
Abstract: An imaging device including: pixel cells each comprising: a photoelectric converter including two electrodes and a photoelectric conversion layer therebetween; a field effect transistor having a gate and a channel region; and a node between the photoelectric converter and the field effect transistor. The field effect transistor outputs an electric signal corresponding to change in dielectric constant between the electrodes, the change being caused by incident light on the photoelectric conversion layer. Cpd1, Cn1, Cpd2 and Cn2 satisfy a relation of Cpd1/Cn1
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