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    METAL OXIDE FIELD EFFECT TRANSISTOR WITH A SHARP HALO
    31.
    发明申请
    METAL OXIDE FIELD EFFECT TRANSISTOR WITH A SHARP HALO 有权
    具有夏普HALO的金属氧化物场效应晶体管

    公开(公告)号：US20080093629A1

    公开(公告)日：2008-04-24

    申请号：US11955591

    申请日：2007-12-13

    申请人： Huajie Chen ,  Judson Holt ,  Rangarajan Jagannathan ,  Wesley Natzle ,  Michael Sievers ,  Richard Wise

    发明人： Huajie Chen ,  Judson Holt ,  Rangarajan Jagannathan ,  Wesley Natzle ,  Michael Sievers ,  Richard Wise

    IPC分类号： H01L29/778

    CPC分类号： H01L29/66636 ,  H01L29/6659 ,  H01L29/7833

    摘要： Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.

    摘要翻译： 公开了具有限定的限定的卤素的MOSFET的实施例，其限定的源极/漏极扩展部分以及形成MOSFET的方法。 蚀刻半导体层以形成切割栅极介电层的凹部。 低能量植入物形成晕轮。 然后，执行COR预清洁，并且通过外延沉积填充凹部。 外延可以被原位掺杂或随后植入以形成源/漏扩展。 或者，蚀刻之后紧接着是COR预清洁，随后进行外延沉积以填充凹部。 在外延沉积工艺期间，沉积的材料被掺杂以形成原位掺杂的光晕，然后切换掺杂剂以形成邻近光晕的原位掺杂的源极/漏极延伸。 或者，在形成原位掺杂的光晕之后，进行沉积工艺而没有掺杂剂，并且使用注入来形成源极/漏极延伸部。