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公开(公告)号：US20130326114A1
公开(公告)日：2013-12-05
申请号：US13484037
申请日：2012-05-30
IPC分类号： G06F12/00
CPC分类号： G06F12/0246
摘要： Apparatus and method for data management in a memory, such as but not limited to a flash memory array. In accordance with some embodiments, a first hash value associated with a first set of data stored in a memory is compared to a second hash value associated with a second set of data pending storage to the memory. The second set of data is stored in the memory responsive to a mismatch between the first and second hash values.
摘要翻译： 存储器中的数据管理的装置和方法，例如但不限于闪存阵列。 根据一些实施例，将与存储在存储器中的第一组数据相关联的第一散列值与与要存储到存储器的存储器的第二组数据相关联的第二散列值进行比较。 响应于第一和第二哈希值之间的不匹配，第二组数据被存储在存储器中。
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公开(公告)号：US20130007543A1
公开(公告)日：2013-01-03
申请号：US13173962
申请日：2011-06-30
CPC分类号： G11C16/3418 , G11C16/349 , G11C29/50016
摘要： Representative locations of a non-volatile, solid-state memory of an apparatus store characterization data. An event during which elapsed time is not measured by the apparatus is determined. In response to the event, temporal degradation of the non-volatile, solid-state memory during the event is estimated based on electrical characteristics of the representative locations.
摘要翻译： 装置的非易失性固态存储器的代表性位置存储表征数据。 确定由设备不测量经过时间的事件。 响应于该事件，基于代表性位置的电特性来估计事件期间的非易失性固态存储器的时间退化。
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公开(公告)号：US08248856B2
公开(公告)日：2012-08-21
申请号：US12908295
申请日：2010-10-20
申请人： Ryan James Goss , Kevin Gomez
发明人： Ryan James Goss , Kevin Gomez
IPC分类号： G11C11/34
CPC分类号： G11C7/14 , G11C7/04 , G11C11/5642 , G11C16/26 , G11C16/3418 , G11C16/349 , G11C2211/5634
摘要： The read channel of a solid state non-volatile memory may be configured to compensate for shifts in the threshold voltages of memory cells of the memory. A log of write time information and write temperature information from one or more write operations is stored in a data unit header. The read channel configuration, which may include reference voltages used for the read operation, is determined using the write time information and the write temperature information. Memory cells of the data unit are read using the configured read channel. A historical profile spanning multiple write operations may also be developed and used to configure the read channel.
摘要翻译： 固态非易失性存储器的读通道可以被配置为补偿存储器的存储器单元的阈值电压的偏移。 来自一个或多个写入操作的写入时间信息和写入温度信息的日志被存储在数据单元头中。 可以使用写入时间信息和写入温度信息确定读取通道配置，其可以包括用于读取操作的参考电压。 使用配置的读通道读取数据单元的存储单元。 跨越多个写入操作的历史配置文件也可以被开发并用于配置读取通道。
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公开(公告)号：US20120102259A1
公开(公告)日：2012-04-26
申请号：US12908295
申请日：2010-10-20
申请人： Ryan James Goss , Kevin Gomez
发明人： Ryan James Goss , Kevin Gomez
CPC分类号： G11C7/14 , G11C7/04 , G11C11/5642 , G11C16/26 , G11C16/3418 , G11C16/349 , G11C2211/5634
摘要： The read channel of a solid state non-volatile memory may be configured to compensate for shifts in the threshold voltages of memory cells of the memory. A log of write time information and write temperature information from one or more write operations is stored in a data unit header. The read channel configuration, which may include reference voltages used for the read operation, is determined using the write time information and the write temperature information. Memory cells of the data unit are read using the configured read channel. A historical profile spanning multiple write operations may also be developed and used to configure the read channel.
摘要翻译： 固态非易失性存储器的读通道可以被配置为补偿存储器的存储器单元的阈值电压的偏移。 来自一个或多个写入操作的写入时间信息和写入温度信息的日志被存储在数据单元头中。 可以使用写入时间信息和写入温度信息确定读取通道配置，其可以包括用于读取操作的参考电压。 使用配置的读通道读取数据单元的存储单元。 跨越多个写入操作的历史配置文件也可以被开发并用于配置读取通道。
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公开(公告)号：US09529724B2
公开(公告)日：2016-12-27
申请号：US13543303
申请日：2012-07-06
CPC分类号： G06F12/0866 , G06F3/0614 , G06F12/0246
摘要： Approaches for implementing a controller for a hybrid memory that includes a main memory and a cache for the main memory are discussed. The controller comprises a hierarchy of abstraction layers, wherein each abstraction layer is configured to provide at least one component of a cache management structure. Each pair of abstraction layers utilizes processors communicating through an application programming interface (API). The controller is configured to receive incoming memory access requests from a host processor and to manage outgoing memory access requests routed to the cache using the plurality of abstraction layers.
摘要翻译： 讨论了实现包括主存储器和主存储器的高速缓存的混合存储器的控制器的方法。 控制器包括抽象层的层次结构，其中每个抽象层被配置为提供高速缓存管理结构的至少一个组件。 每对抽象层都使用通过应用程序编程接口（API）进行通信的处理器。 控制器被配置为从主处理器接收传入的存储器访问请求，并且使用多个抽象层来管理路由到高速缓存的传出存储器访问请求。
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36.发明授权Verifying whether metadata identifies a most current version of stored data in a memory space 有权验证元数据是否识别存储空间中最新版本的存储数据公开(公告)号：US08364886B2
公开(公告)日：2013-01-29
申请号：US12693691
申请日：2010-01-26
申请人： Ryan James Goss
发明人： Ryan James Goss
IPC分类号： G06F12/16
CPC分类号： G06F12/0246 , G06F2212/7207
摘要： Method and apparatus for verifying whether metadata identifies a most current version of data stored in a memory space. In accordance with various embodiments, a physical location within a first portion of a solid-state memory space is identified by metadata as storing a current version of user data having a selected logical address. A reverse search is performed upon a second portion of the memory space to determine whether the physical address identified by the metadata stores a stale version of the user data, or whether the physical address stores the current version.
摘要翻译： 用于验证元数据是否识别存储在存储器空间中的最新数据版本的方法和装置。 根据各种实施例，固态存储器空间的第一部分内的物理位置由元数据标识为存储具有所选逻辑地址的用户数据的当前版本。 对存储器空间的第二部分执行反向搜索，以确定由元数据标识的物理地址是否存储用户数据的陈旧版本，还是物理地址是否存储当前版本。
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公开(公告)号：US08806106B2
公开(公告)日：2014-08-12
申请号：US12945496
申请日：2010-11-12
IPC分类号： G06F12/00
CPC分类号： G11C16/349 , G06F3/0616 , G06F2212/7204 , G06F2212/7211 , G11C29/50
摘要： Completion times of data storage operations targeted to a non-volatile, solid-state memory device are measured. Wear of the memory device is estimated using the measured completion times, and life cycle management operations are performed to affect subsequent wear of the memory device in accordance with the estimated wear. The life cycle management may include operations such as wear leveling, predicting an end of service life of the memory device, and removing worn blocks of the memory device from service.
摘要翻译： 测量针对非易失性固态存储器件的数据存储操作的完成时间。 使用测量的完成时间估计存储器件的磨损，并且执行生命周期管理操作以根据估计的磨损影响存储器件的后续磨损。 生命周期管理可以包括诸如磨损均衡，预测存储器设备的使用寿命的结束以及从服务中去除存储器件的磨损块的操作。
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公开(公告)号：US08705291B2
公开(公告)日：2014-04-22
申请号：US13117913
申请日：2011-05-27
CPC分类号： G11C16/10 , G11C11/5628 , G11C11/5635 , G11C16/16 , G11C16/22
摘要： Method and apparatus for sanitizing a non-volatile memory, such as a flash memory array. In accordance with various embodiments, a memory cell is sanitized by using a write circuit to accumulate charge on a floating gate of the cell to a level such that application of a maximum available read sensing voltage to a control gate of the cell is insufficient to place the cell in a conductive state.
摘要翻译： 用于消毒诸如闪存阵列的非易失性存储器的方法和装置。 根据各种实施例，通过使用写入电路将存储单元的浮动栅极上的电荷累积到使得将最大可用读取感测电压施加到单元的控制栅极不足以放置的水平来消毒存储器单元 电池处于导通状态。
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公开(公告)号：US20120300554A1
公开(公告)日：2012-11-29
申请号：US13117913
申请日：2011-05-27
CPC分类号： G11C16/10 , G11C11/5628 , G11C11/5635 , G11C16/16 , G11C16/22
摘要： Method and apparatus for sanitizing a non-volatile memory, such as a flash memory array. In accordance with various embodiments, a memory cell is sanitized by using a write circuit to accumulate charge on a floating gate of the cell to a level such that application of a maximum available read sensing voltage to a control gate of the cell is insufficient to place the cell in a conductive state.
摘要翻译： 用于消毒诸如闪存阵列的非易失性存储器的方法和装置。 根据各种实施例，通过使用写入电路将存储单元的浮动栅极上的电荷累积到使得将最大可用读取感测电压施加到单元的控制栅极不足以放置的水平来消毒存储器单元 电池处于导通状态。
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40.发明申请Self-Initiated Secure Erasure Responsive to an Unauthorized Power Down Event 有权自发启动的安全擦除响应于未经授权的掉电事件公开(公告)号：US20120278579A1
公开(公告)日：2012-11-01
申请号：US13098062
申请日：2011-04-29
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7205
摘要： Method and apparatus for self-initiated secure erasure of data from a non-volatile memory, such as a solid state drive (SSD). In accordance with various embodiments, the memory is operated in communication with a host device. A self-initiated, non-destructive secure erasure of the data stored in the memory is carried out responsive to a detection of an unauthorized power down event associated with the memory.
摘要翻译： 用于自发地安全擦除来自诸如固态驱动器（SSD）的非易失性存储器的数据的方法和装置。 根据各种实施例，存储器被操作以与主机设备通信。 响应于与存储器相关联的未授权断电事件的检测，执行存储在存储器中的数据的自发的非破坏性安全擦除。
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