摘要:
An electron microscope and a method for obtaining microscopic images whereby the intensity and distribution of the internal magnetic field of a specimen are acquired with precision. The electron microscope irradiates a focused electron beam at a target specimen and detects the transmitted beam past the specimen. The irradiated position on the specimen is selected by one of three ways: by moving the specimen alone, by deflecting the focused electron beam before it enters the specimen, or by combining these two ways. In this setup, the internal magnetic field of the specimen under its irradiated spot is known through detection of the deflection of the electron beam caused by the Lorentz force and through arithmetic processing of the detected deflection. An actuator that moves the specimen comprises a support with a hole through which the electron beam passes, a specimen stage with a like hole, a plurality of piezoelectric devices, and a structure that lets the electron beam pass therethrough. The actuator also comprises a mobile stage mounted on the support and attached to the specimen stage via the multiple piezoelectric devices, the mobile stage causing the devices to shift the support normal to the electron beam. Another component of the actuator is a stage control means for supplying a driving voltage to the multiple piezoelectric devices for their position control.
摘要:
A metal layer of not more than 2.0 .mu.m thick is formed on a base, containing nickel as the main ingredient and a reducing agent such as silicon and magnesium, by depositing tungsten by an electron beam under heating in a vacuum. The base is heat treated in a hydrogen atmosphere at 800.degree. to 1,100.degree. C. An emissive material layer, containing an alkali earth metal oxide and 0.01 to 25 wt % of a rare earth metal oxide, the alkali earth metal oxide containing at least barium oxide, is formed on the metal layer. Thus, life characteristics of the cathode, especially during the operation at a high current density such as not less than 2A/cm.sub.2, are greatly enhanced.
摘要:
Ion implantation is conducted in a desired area(s) of the surface of a magnetic layer, and annealing of the layer is carried out to control the composition in that desired area(s). The control of the composition may be facilitated by applying a one-directional or rotating magnetic field during ion implantation. In preparing a magnetic head, a portion of a magnetic pole at least on one side thereof in close proximity to a magnetic recording medium is formed into an iron or iron-based magnetic alloy film, at least part of which is subjected to ion implantation and annealing.
摘要:
A Bloch line memory device and a method of erasing information in which, for erasure of a Bloch line pair representative of one bit of information and located in one end portion of one stripe domain, the stripe domain is stretched by decreasing the intensity of a bias magnetic field, an erasure Bloch line pair having a rotation of magnetization opposite to that of the to-be-erased Bloch line pair is injected into the end portion of the stretched stripe domain by supplying a current pulse signal to a conductor arranged substantially perpendicualr to the lengthwise direction of the stripe domain, and the stretched stripe domain is shrinked by restoring the intensity of the bias magnetic field, so that the to-be-erased Bloch line pair is combined with the erasure Bloch line pair to cancel the former.
摘要:
A Bloch line memory device in which a stripe magnetic domain is formed within a magnetic film for holding magnetic bubble domains, and Bloch line pairs are stored as information carriers within a magnetic wall defining the magnetic domain. In order to write Bloch lines into the magnetic wall of the stripe magnetic domain, current is caused to flow through a single conductor which is so disposed as to cross the magnetic wall of the stripe magnetic domain. On this occasion, the current through the single conductor is so directed as to generate an in-plane field opposite in sense to magnetization within the magnetic wall of the stripe magnetic domain.
摘要:
A hybrid magnetic bubble memory device comprising soft magnetic material propagation tracks and ion-implanted propagation tracks. In the soft magnetic material propagation track region, a layer made of a heat-resistant polymer was provided as an interlaminar insulating layer between a conductor and a pattern of a soft magnetic material. An insulator film made of a heat-resistant polymer was provided on the pattern made of a soft magnetic material. A passivation film made of an inorganic material was provided on the ion-implanted propagation tracks and the insulator film made of a heat-resistant polymer.
摘要:
A magnetic bubble memory device for implementing its high storage density for practical use is generally composed of ion-implanted elements occupying the most part of a minor loop, and other elements made of soft magnetic materials. The ion-implanted minor loop with a higher density is folded several times, and includes straight propagation tracks adjacent to each other and connected by an inside turn, with another straight propagation track having an outside turn facing the inside turn being placed between the adjacent straight tracks.
摘要:
A magnetic bubble detector has a stretcher part for stretching a magnetic bubble while propagating it and a detection part for detecting the magnetic bubble while propagating it. In the magnetic bubble detector, the period of arrangement of bubble propagation elements forming the exit of the stretcher part viewed in a bubble propagation direction is larger than the period of arrangement of bubble propagation elements forming the entrance of the stretcher part viewed in a bubble propagation direction.
摘要:
A method of implanting a magnetic garnet film with ions is disclosed in which a covering film is provided on a monocrystalline magnetic garnet film for magnetic bubbles, and hydrogen ions are implanted in a desired portion of a surface region in the magnetic garnet film through the covering film. According to this method, it is possible to form an ion-implanted layer in which the ion concentration distribution in the direction of depth is uniform, and moreover the inplane anisotropy field in the ion-implanted layer decreases only a little with time in an annealing process.
摘要:
A discharge lamp comprises an arc tube for high pressure discharge and a discharge gap for discharging until restarting the arc tube. The discharge gap being electrically connected in parallel to the arc tube in an outer bulb. A normally opened temperature responsive switch means is connected in series to the discharge gap and a series of the discharge gap and the temperature responsive switch means is connected in parallel to the arc tube.