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    Multiple sensor magnetic reproducing device with reduced inter-sensor spacing
    33.
    发明授权
    Multiple sensor magnetic reproducing device with reduced inter-sensor spacing 有权
    具有减小传感器间距的多传感器磁再现装置

    公开(公告)号：US09536549B1

    公开(公告)日：2017-01-03

    申请号：US14826798

    申请日：2015-08-14

    Applicant: Seagate Technology LLC

    Inventor： Zhiguo Ge ,  Victor Sapozhnikov ,  Shaun E. Mckinlay ,  Eric W. Singleton ,  Jae Young Yi ,  Mohammed Shariat Ullah Patwari

    IPC: G11B5/39 ,  G11B5/127

    CPC classification number: G11B5/3912 ,  G11B5/3948 ,  G11B5/397

    Abstract: A multi-sensor reader that includes a first sensor that has a sensor stack, which includes a free layer (FL) that has a magnetization that changes according to an external magnetic field. The first sensor also includes a shielding structure that is positioned over the sensor stack. The multi-sensor reader also includes a second sensor stacked over the first sensor. The second sensor includes a sensor stack, which includes a FL that has a magnetization that changes according to the external magnetic field. The multi-sensor reader further includes an isolation layer between the first sensor and the second sensor. A FL-to-FL spacing reduction feature is included in at least one of the isolation layer or the shielding structure.

    Abstract translation: 一种多传感器读取器，其包括具有传感器堆叠的第一传感器，该传感器堆叠包括具有根据外部磁场而变化的磁化的自由层（FL）。 第一传感器还包括位于传感器堆叠上方的屏蔽结构。 多传感器读取器还包括堆叠在第一传感器上的第二传感器。 第二传感器包括传感器堆，其包括具有根据外部磁场而变化的磁化的FL。 多传感器读取器还包括在第一传感器和第二传感器之间的隔离层。 在隔离层或屏蔽结构中的至少一个中包括FL-to-FL间隔缩小特征。

    MAGNETIC SENSING DEVICE WITH REDUCED SHIELD-TO-SHIELD SPACING
    34.
    发明申请
    MAGNETIC SENSING DEVICE WITH REDUCED SHIELD-TO-SHIELD SPACING 审中-公开
    具有减小的屏蔽到屏蔽间隔的磁感测装置

    公开(公告)号：US20160356861A1

    公开(公告)日：2016-12-08

    申请号：US15238354

    申请日：2016-08-16

    Applicant: Seagate Technology, LLC

    Inventor： Eric W. Singleton ,  Qing He ,  Jae-Young Yi ,  Matt Johnson ,  Zheng Gao ,  Dimitar V. Dimitrov ,  Song S. Xue

    IPC: G01R33/00 ,  G01R33/09

    CPC classification number: G01R33/0052 ,  B82Y25/00 ,  G01R33/0076 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912 ,  G11B5/398

    Abstract: A magnetic sensor assembly includes first and second shields each comprised of a magnetic material. The first and second shields define a physical shield-to-shield spacing. A sensor stack is disposed between the first and second shields and includes a seed layer adjacent the first shield, a cap :layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer. At least a portion of the seed layer and/or the cap layer comprises a magnetic material to provide an effective shield-to-shield spacing of the magnetic sensor assembly that is less than the physical shield-to-shield spacing.

    Abstract translation: 磁传感器组件包括由磁性材料构成的第一和第二屏蔽件。 第一和第二屏蔽层定义物理屏蔽间隔。 传感器堆叠设置在第一和第二屏蔽之间，并且包括邻近第一屏蔽的种子层，与第二屏蔽相邻的盖：层和种子层与盖层之间的磁传感器。 种子层和/或盖层的至少一部分包括磁性材料，以提供小于物理屏蔽 - 屏蔽间隔的磁性传感器组件的有效的屏蔽到屏蔽间隔。

    MAGNETORESISTIVE SENSOR SHIELD
    38.
    发明申请
    MAGNETORESISTIVE SENSOR SHIELD 有权
    磁传感器屏蔽

    公开(公告)号：US20150170686A1

    公开(公告)日：2015-06-18

    申请号：US14105922

    申请日：2013-12-13

    Applicant: Seagate Technology LLC

    Inventor： Eric W. Singleton ,  Liwen Tan ,  Jae-Young Yi

    IPC: G11B5/39

    CPC classification number: G11B5/3912 ,  G01R33/007 ,  G01R33/025 ,  G01R33/098 ,  G11B5/3916 ,  G11B5/398 ,  G11B2005/3996 ,  H01F10/3204 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121

    Abstract: Implementations disclosed herein provide for a magnetoresistive (MR) sensor including a synthetic antiferromagnetic (SAF) structure that is magnetically coupled a side shield element. The SAF structure includes at least one magnetic amorphous layer that is an alloy of a ferromagnetic material and a refractory material. The amorphous magnetic layer may be in contact with a non-magnetic layer and antiferromagnetically coupled to a layer in contact with an opposite surface of the non-magnetic layer.

    Abstract translation: 本文公开的实施例提供了一种磁阻（MR）传感器，其包括磁耦合侧屏蔽元件的合成反铁磁（SAF）结构。 SAF结构包括至少一个磁性非晶层，其是铁磁材料和耐火材料的合金。 非晶磁性层可以与非磁性层接触并且与与非磁性层的相反表面接触的层反铁磁耦合。

    MAGNETORESISTIVE SENSOR
    39.
    发明申请
    MAGNETORESISTIVE SENSOR 有权
    磁传感器

    公开(公告)号：US20150084624A1

    公开(公告)日：2015-03-26

    申请号：US14036995

    申请日：2013-09-25

    Applicant: Seagate Technology LLC

    Inventor： Eric W. Singleton ,  Liwen Tan ,  Jae-Young Yi ,  Konstantin Nikolaev

    IPC: G01R33/09 ,  G01R33/00

    CPC classification number: G11B5/3912 ,  G01R33/0017 ,  G01R33/09 ,  G01R33/098

    Abstract: Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for one or more alloyed layers that each include a ferromagnetic material and a refractory material. The alloyed layers are provided adjacent to a shield element or between soft magnetic layers of the sensor stack.

    Abstract translation: 通过提供一个或多个合金层，每个包含铁磁材料和耐火材料，本文公开的实施方式允许由磁阻（MR）传感器检测的信号得到改善。 合金层邻近屏蔽元件或传感器堆叠的软磁层之间设置。

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