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公开(公告)号：US11113995B2
公开(公告)日：2021-09-07
申请号：US16340227
申请日：2017-10-18
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Toshiyuki Isa , Akio Endo , Yosuke Tsukamoto , Jun Koyama
Abstract: An electronic device including a large display region and with improved portability is provided. An electronic device with improved reliability is provided.
An information processing device includes a first film, a panel substrate, and at least a first housing. The panel substrate has flexibility and a display region, and the first film has a visible-light-transmitting property and flexibility. The first housing includes a first slit, the panel substrate includes a region positioned between the first film and a second film, the first slit has a function of storing the region, and one or both of the panel substrate and the first film can slide along the first slit.-
公开(公告)号：US20190296089A1
公开(公告)日：2019-09-26
申请号：US16441509
申请日：2019-06-14
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Toshiyuki Isa
Abstract: The display defects of a display device are reduced. The display quality of the display device is improved. The display device includes a display panel and a first conductive layer. The display panel includes a display element including a pair of electrodes. An electrode of the pair of electrodes which is closer to one surface of the display panel is supplied with a constant potential. A constant potential is supplied to the first conductive layer. The second conductive layer provided on the other surface of the display panel is in contact with the first conductive layer, whereby the second conductive layer is also supplied with the constant potential. The second conductive layer includes a portion not fixed to the first conductive layer.
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公开(公告)号：US10254796B2
公开(公告)日：2019-04-09
申请号：US15497743
申请日：2017-04-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Toshiyuki Isa , Akio Endo , Yosuke Tsukamoto , Jun Koyama
Abstract: An electronic device with a large display region and improved portability is provided. An electronic device with improved reliability is provided. The information processing device includes a first film, a second film, a panel substrate, and at least a first housing. The panel substrate has flexibility and includes a display region. The first film has visible light transmittance and flexibility, and the second film has flexibility. The first housing includes a first slit, the panel substrate includes a region interposed between the first film and the second film, the first slit is configured to store the region, and one or more of the panel substrate, the first film, and the second film can slide along the first slit.
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公开(公告)号：US20130095617A1
公开(公告)日：2013-04-18
申请号：US13706841
申请日：2012-12-06
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Miyako NAKAJIMA , Hiddekazu Miyairi , Toshiyuki Isa , Erika Kato , Mitsuhiro Ichijo , Kazutaka Kuriki , Tomokazu Yokoi
IPC: H01L29/66
CPC classification number: H01L29/6675 , H01L29/04 , H01L29/4908 , H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L29/78696
Abstract: An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility, A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current.
Abstract translation: 本发明的目的是提供一种具有小截止电流，大电流和高场效应迁移率的薄膜晶体管，通过氧化氮化硅层形成的氮化硅层和氧化硅层作为栅绝缘层 并且晶体从栅极绝缘层的氧化硅层的界面生长以形成微晶半导体层; 因此，制造了反交错的薄膜晶体管。 由于晶体从栅极绝缘层生长，所以薄膜晶体管可以具有高结晶度，大电流和高的场效应迁移率。 此外，提供缓冲层以减少电流。
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