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    Light-emitting device
    3.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US09857844B2

    公开(公告)日：2018-01-02

    申请号：US14331453

    申请日：2014-07-15

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yosuke Tsukamoto

    IPC: G06F1/16

    CPC classification number: G06F1/1652 ,  G06F1/1618 ,  G06F1/162 ,  G06F1/1626 ,  G06F1/1637

    Abstract: A foldable light-emitting device is provided. Furthermore, a light-emitting device which can be developed is provided. The light-emitting device includes a light-emitting panel having flexibility, two support panels which support the light-emitting panel, and arms which are connected to the respective panels to be rotatable. Furthermore, the light-emitting device has a structure in which the two support panels, which are apart from each other and connected to the two arms that are connected to be rotatable, support the light-emitting panel. Accordingly, the light-emitting device can be folded so that the two support panels are apart from each other.

    Semiconductor Device and Method of Manufacturing the Same
    4.
    发明申请
    Semiconductor Device and Method of Manufacturing the Same 有权
    半导体器件及其制造方法

    公开(公告)号：US20140014964A1

    公开(公告)日：2014-01-16

    申请号：US14026369

    申请日：2013-09-13

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Satoshi Murakami ,  Yosuke Tsukamoto ,  Tomoaki Atsumi ,  Masayuki Sakakura

    IPC: H01L29/04

    CPC classification number: H01L29/04 ,  G02F1/13454 ,  G02F1/136204 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124

    Abstract: In a semiconductor device, gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.

    Abstract translation: 在半导体器件中，栅极信号线在结晶半导体膜之上彼此间隔开。 因此，当在层间绝缘膜中打开接触孔时，第一保护电路不电连接。 在干蚀刻期间产生的用于打开接触孔的静电从栅极信号线移动，损坏栅极绝缘膜，通过晶体半导体膜，并且在栅极绝缘膜到达栅极信号线之前再次损坏栅极绝缘膜。 由于在干蚀刻期间产生的静电损害第一保护电路，所以静电的能量减小，直到损失驱动电路TFT的能力。 从而防止了驱动电路TFT遭受静电放电损坏。

    Information processing device, display device, and electronic device
    6.
    发明授权
    Information processing device, display device, and electronic device 有权

    公开(公告)号：US11113995B2

    公开(公告)日：2021-09-07

    申请号：US16340227

    申请日：2017-10-18

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Toshiyuki Isa ,  Akio Endo ,  Yosuke Tsukamoto ,  Jun Koyama

    IPC: G06F1/16 ,  G09F9/30

    Abstract: An electronic device including a large display region and with improved portability is provided. An electronic device with improved reliability is provided.
    An information processing device includes a first film, a panel substrate, and at least a first housing. The panel substrate has flexibility and a display region, and the first film has a visible-light-transmitting property and flexibility. The first housing includes a first slit, the panel substrate includes a region positioned between the first film and a second film, the first slit has a function of storing the region, and one or both of the panel substrate and the first film can slide along the first slit.

    Information processing device, display device, and electronic device
    7.
    发明授权
    Information processing device, display device, and electronic device 有权

    公开(公告)号：US10254796B2

    公开(公告)日：2019-04-09

    申请号：US15497743

    申请日：2017-04-26

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Toshiyuki Isa ,  Akio Endo ,  Yosuke Tsukamoto ,  Jun Koyama

    IPC: G06F1/16 ,  G06F3/041 ,  G06F3/042 ,  G06F3/044 ,  H01L27/32

    Abstract: An electronic device with a large display region and improved portability is provided. An electronic device with improved reliability is provided. The information processing device includes a first film, a second film, a panel substrate, and at least a first housing. The panel substrate has flexibility and includes a display region. The first film has visible light transmittance and flexibility, and the second film has flexibility. The first housing includes a first slit, the panel substrate includes a region interposed between the first film and the second film, the first slit is configured to store the region, and one or more of the panel substrate, the first film, and the second film can slide along the first slit.

    Method for manufacturing display device and display device manufacturing apparatus
    8.
    发明授权
    Method for manufacturing display device and display device manufacturing apparatus 有权

    公开(公告)号：US12278223B2

    公开(公告)日：2025-04-15

    申请号：US17278754

    申请日：2019-09-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yosuke Tsukamoto ,  Taiki Nonaka ,  Kensuke Yoshizumi ,  Koji Kusunoki ,  Shunpei Yamazaki

    IPC: H01L25/16 ,  H01L21/66 ,  H01L21/67 ,  H01L23/00 ,  H01L29/786

    Abstract: To reduce the manufacturing cost of a display device using a micro LED as a display element. To manufacture a display device using a micro LED as a display element in a high yield. Employed is a method for manufacturing a display device, including: forming a plurality of transistors in a matrix over a substrate (800), forming conductors (21, 23) electrically connected to the transistors over the substrate (800), and forming a plurality of light-emitting elements (51) in a matrix over a film (927). Each of the light-emitting elements (51) includes electrodes (85, 87) on one surface and the other surface is in contact with the film (927). The conductors (21, 23) and the electrodes (85, 87) are opposed to each other. An extrusion mechanism (929) is pushed out from the film (927) side to the substrate (800) side so that the conductors (21, 23) and the electrodes (85, 87) are in contact with each other, whereby the conductors (21, 23) and the electrodes (85, 87) are electrically connected to each other.

    Optical device and electronic device
    9.
    发明授权
    Optical device and electronic device 有权

    公开(公告)号：US12085728B2

    公开(公告)日：2024-09-10

    申请号：US18182604

    申请日：2023-03-13

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Takeya Hirose ,  Ryo Hatsumi ,  Hisao Ikeda ,  Daiki Nakamura ,  Yosuke Tsukamoto

    IPC: G02B27/28 ,  G02B27/14

    CPC classification number: G02B27/286 ,  G02B27/144

    Abstract: An optical device with less influence of stray light is provided. The optical device is thin and includes a half mirror, a first lens, a retardation plate, a reflective polarizing plate, and a second lens. In the optical device, a geometric phase lens which has negative and positive refractive power is used as the first lens, whereby images can be focused after magnified optically. Thus, the optical device can have a wide viewing angle. In the case where stray light occurs due to birefringence of an optical material, negative refractive power of the first lens can prevent the stray light from being focused on the eye direction. Accordingly, image degradation recognized due to stray light can be prevented.

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