公开(公告)号：US20210104590A1

公开(公告)日：2021-04-08

申请号：US16915049

申请日：2020-06-29

Applicant: Samsung Display Co., Ltd.

Inventor： Jay Bum KIM ,  Myeong Ho KIM ,  Kyoung Seok SON ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/32 ,  H01L51/56

Abstract: A display device includes a substrate, a first semiconductor pattern, a first gate insulating film covering the first semiconductor pattern, a first conductive layer and a second semiconductor pattern are on the first gate insulating film, a second gate insulating film on the second semiconductor pattern, a third gate insulating film covering the first gate insulating film and the second gate insulating film, a second conductive layer on the third gate insulating film, an interlayer insulating film covering the second conductive layer, and a third conductive layer on the interlayer insulating film, wherein the first and second semiconductor patterns respectively form semiconductor layers of the first and second transistors, wherein the first conductive layer includes a gate electrode of the first transistor and a first electrode of the capacitor, and wherein the second conductive layer includes a gate electrode of the second transistor and a second electrode of the capacitor.

公开(公告)号：US20210057457A1

公开(公告)日：2021-02-25

申请号：US16890756

申请日：2020-06-02

Applicant: Samsung Display Co., Ltd.

Inventor： Jay Bum KIM ,  Myeong Ho KIM ,  Kyoung Seok SON ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/12 ,  H01L27/32

Abstract: A display device includes: a bending region including a bending peripheral opening passing through the first interlayer insulating film and the first gate insulating film and a bending opening in the bending peripheral opening and passing through the second interlayer insulating film and the buffer layer to expose the substrate, a first sidewall of the bending peripheral opening includes a side surface of the first interlayer insulating film and a side surface of the first gate insulating film, the second interlayer insulating film covers the first sidewall of the bending peripheral opening, the bending opening includes a second sidewall including a side surface of the buffer layer and a portion of a side surface of the second interlayer insulating film arranged with the side surface of the buffer layer, and the first via layer fills the bending opening.

公开(公告)号：US20210036086A1

公开(公告)日：2021-02-04

申请号：US16880792

申请日：2020-05-21

Applicant: Samsung Display Co., Ltd.

Inventor： Sangwoo SOHN ,  Myounghwa KIM ,  TaeSang KIM ,  Hyungjun KIM ,  Yeon Keon MOON ,  Joon Seok PARK ,  Sangwon SHIN ,  Jun Hyung LIM ,  Hyelim CHOI

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52 ,  H01L29/786

Abstract: A display panel includes a base layer, a first thin film transistor on the base layer, a second thin film transistor electrically coupled to the first thin film transistor, and a light emitting element electrically coupled to the second thin film transistor. The first thin film transistor includes a first semiconductor pattern on the base layer, a first barrier pattern on the first semiconductor pattern and including a gallium (Ga) oxide and a zinc (Zn) oxide, and a first control electrode on the first barrier pattern and overlapping the first semiconductor pattern. Accordingly, a signal transmission speed of the display panel may be improved, and electrical characteristics and reliability of the thin film transistor included in the display panel may be improved.

公开(公告)号：US20210020110A1

公开(公告)日：2021-01-21

申请号：US16846195

申请日：2020-04-10

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok PARK ,  So Young KOO ,  Myoung Hwa KIM ,  Eok Su KIM ,  Tae Sang KIM ,  Hyung Jun KIM ,  Yeon Keon MOON ,  Geun Chul PARK ,  Jun Hyung LIM ,  Kyung Jin JEON ,  Hye Lim CHOI

IPC: G09G3/3266 ,  G09G3/3233 ,  G09G3/3291 ,  H01L27/32 ,  H01L29/786 ,  H01L29/49

Abstract: A display device, includes: a pixel connected to a scan line and a data line crossing the scan line, wherein the pixel includes a light emitting element, a driving transistor configured to control a driving current supplied to the light emitting element according to a data voltage received from the data line, and a first switching transistor configured to apply the data voltage of the data line to the driving transistor according to a scan signal applied to the scan line; wherein the driving transistor includes a first active layer including an oxide semiconductor and a first oxide layer on the first active layer and including an oxide semiconductor; and wherein the first switching transistor includes a second active layer on the first active layer and including the same oxide semiconductor as the first oxide layer.

公开(公告)号：US20190252478A1

公开(公告)日：2019-08-15

申请号：US16254297

申请日：2019-01-22

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung Seok SON ,  Jaybum KIM ,  Yeon Keon MOON ,  Jun Hyung LIM

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  H01L27/1251 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258

Abstract: An organic light emitting display device includes a substrate, a first semiconductor element, a second semiconductor element, an insulation layer structure, and a light emitting structure. The substrate has a first region and a second region that is adjacent to the first region. The insulation layer structure is disposed between a second gate electrode and a second active layer of the second semiconductor element. The insulation layer structure includes a first insulation layer having a first etching rate, a second insulation layer disposed on the first insulation layer and having a second etching rate that is greater than the first etching rate, and a third insulation layer disposed on the second insulation layer and having a third etching rate that is less than the second etching rate in a same etching process. The light emitting structure is disposed on the insulation layer structure.

公开(公告)号：US20160300859A1

公开(公告)日：2016-10-13

申请号：US14856405

申请日：2015-09-16

Applicant: Samsung Display Co., Ltd.

Inventor： Yeon Keon MOON ,  Masataka KANO ,  So Young KOO ,  Myoung Hwa KIM ,  Jun Hyung LIM

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/0705 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/127 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/7869

Abstract: A thin film transistor display panel including: a first insulating substrate; a first semiconductor disposed between the first insulating substrate and a first gate insulating layer; a gate electrode disposed on the first gate insulating layer, the gate electrode overlapping the first semiconductor; a second gate insulating layer disposed on the gate electrode; a second semiconductor disposed on the second gate insulating layer, the second semiconductor overlapping the gate electrode; an interlayer insulating layer disposed on the second semiconductor; and a source electrode and a drain electrode disposed on the interlayer insulating layer spaced apart from each other, the source electrode and the drain electrode connected to the first semiconductor and the second semiconductor.

Abstract translation: 一种薄膜晶体管显示面板，包括：第一绝缘基板; 布置在第一绝缘基板和第一栅极绝缘层之间的第一半导体; 设置在所述第一栅极绝缘层上的栅电极，所述栅电极与所述第一半导体重叠; 设置在所述栅电极上的第二栅极绝缘层; 布置在第二栅绝缘层上的第二半导体，第二半导体与栅电极重叠; 设置在所述第二半导体上的层间绝缘层; 以及设置在层间绝缘层彼此间隔开的源电极和漏电极，源电极和漏电极连接到第一半导体和第二半导体。

公开(公告)号：US20240413174A1

公开(公告)日：2024-12-12

申请号：US18807906

申请日：2024-08-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyung Jin JEON ,  Eok Su KIM ,  Joon Seok PARK ,  So Young KOO ,  Tae Sang KIM ,  Jun Hyung LIM

IPC: H01L27/12

Abstract: According to some embodiments of the present disclosure, a display device includes an active pattern including a metal oxide, a gate electrode overlapping the active pattern, a first capacitor electrode spaced apart from the active pattern and including a conductive oxide, and a second capacitor electrode on the first capacitor electrode.

公开(公告)号：US20230163217A1

公开(公告)日：2023-05-25

申请号：US17870805

申请日：2022-07-21

Applicant: Samsung Display Co., LTD.

Inventor： Kyoung Won LEE ,  Eun Hye KO ,  Yeon Hong KIM ,  Eun Hyun KIM ,  Hyung Jun KIM ,  Sun Hee LEE ,  Jun Hyung LIM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1218 ,  H01L29/66969

Abstract: A thin-film transistor includes a light-shielding layer disposed on a substrate, an oxygen supply layer disposed on the light-shielding layer and including a metal oxide, a buffer layer disposed on the substrate and covering the oxygen supply layer, an active layer disposed on the buffer layer, where the active layer includes a channel area overlapping the light-shielding layer, and a first electrode area and a second electrode area respectively in contact with opposing sides of the channel area, a gate insulating layer disposed on the channel area of the active layer.

公开(公告)号：US20230127261A1

公开(公告)日：2023-04-27

申请号：US17860593

申请日：2022-07-08

Applicant: Samsung Display Co., LTD.

Inventor： Hyung Jun KIM ,  So Young KOO ,  Eok Su KIM ,  Yun Yong NAM ,  Jun Hyung LIM ,  Kyung Jin JEON

IPC: H01L27/12 ,  H01L25/16

Abstract: A display device includes a first conductive layer including a first voltage line and a second voltage line, a buffer layer, a semiconductor layer including a first active layer and a second active layer, a first gate insulating layer, a second conductive layer including a first gate electrode overlapping the first active layer and a second gate electrode overlapping the second active layer, a passivation layer, a via layer, a bank pattern layer including a first bank pattern and a second bank pattern partially spaced apart from each other, a third conductive layer including a first electrode and a second electrode spaced apart from each other, and light emitting elements. The passivation layer includes silicon nitride (SiNx), and a ratio of a number of silicon-hydrogen bonds (Si—H) to a number of nitrogen-hydrogen bonds (N—H) in the silicon nitride (SiNx) is in a range of about 1:0.6 to about 1:1.5.

公开(公告)号：US20220293640A1

公开(公告)日：2022-09-15

申请号：US17831285

申请日：2022-06-02

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jay Bum KIM ,  Myeong Ho KIM ,  Kyoung Seok SON ,  Seung Jun LEE ,  Seung Hun LEE ,  Jun Hyung LIM

IPC: H01L27/12 ,  H01L27/32

Abstract: A display device includes: a bending region including a bending peripheral opening passing through the first interlayer insulating film and the first gate insulating film and a bending opening in the bending peripheral opening and passing through the second interlayer insulating film and the buffer layer to expose the substrate, a first sidewall of the bending peripheral opening includes a side surface of the first interlayer insulating film and a side surface of the first gate insulating film, the second interlayer insulating film covers the first sidewall of the bending peripheral opening, the bending opening includes a second sidewall including a side surface of the buffer layer and a portion of a side surface of the second interlayer insulating film arranged with the side surface of the buffer layer, and the first via layer fills the bending opening.