Semiconductor device including test structure

    公开(公告)号:US11488877B2

    公开(公告)日:2022-11-01

    申请号:US16191881

    申请日:2018-11-15

    Abstract: A semiconductor device including a test structure includes a semiconductor substrate and a plurality of test structures on the semiconductor substrate. The test structures include respective lower active regions extending from the semiconductor substrate in a vertical direction and having different widths, and upper active regions extending from respective lower active regions in the vertical direction. Each of the lower active regions includes first regions and second regions. The first regions overlap the upper active regions and are between the second regions, and the second regions include outer regions and inner regions between the outer regions. The outer regions, located in the lower active regions having different widths, have different widths.

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