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公开(公告)号:US20140293693A1
公开(公告)日:2014-10-02
申请号:US14197723
申请日:2014-03-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sang-Wan NAM , Kuihan KO , Yang-Lo AHN , Kitae PARK
CPC classification number: G11C16/10 , G11C7/04 , G11C16/0483 , G11C16/08 , G11C16/3427
Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.
Abstract translation: 非易失性存储器件的驱动方法包括接收程序命令和地址。 该方法包括根据与所接收的地址相对应的所选择的字线的位置来改变由未选字线形成的多个区域中的多个相邻区域的数量。 该方法还包括将不同的区域电压施加到相邻区域和剩余区域的数量。 非易失性存储装置包括形成为穿过板状堆叠在基板上的字线的多个串。
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公开(公告)号:US20130219109A1
公开(公告)日:2013-08-22
申请号:US13755144
申请日:2013-01-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seung-Bum KIM , Jaeyong JEONG , Kitae PARK
IPC: G06F12/02
CPC classification number: G06F12/0246 , G06F11/1068 , G11C7/1006 , G11C11/5628 , G11C16/10 , G11C2211/5641
Abstract: A memory system includes a nonvolatile memory device having a first data area storing M-bit data using a buffer program operation and a second data area storing N-bit data (N being an integer larger than M) using a main program operation and a memory controller configured to control the nonvolatile memory device. When a main program operation using data stored at the first and second data areas is required, the memory controller calculates values indicating a performance of the required main program operation to be executed according to a plurality of main program manners, selects one of the plurality of main program manners based on the calculated values, and controls the nonvolatile memory device to perform the required main program operation according to the selected main program manner.
Abstract translation: 存储器系统包括:非易失性存储器件,其具有使用缓冲器程序操作存储M位数据的第一数据区和使用主程序操作存储N位数据(N大于M的整数)的第二数据区;存储器 控制器被配置为控制非易失性存储器件。 当需要使用存储在第一和第二数据区域的数据的主程序操作时,存储器控制器根据多个主程序方式计算指示要执行的所需主程序操作的性能的值,选择多个 基于计算值的主程序方式,并且根据选择的主程序方式控制非易失性存储器件执行所需的主程序操作。
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