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公开(公告)号:US10375699B2
公开(公告)日:2019-08-06
申请号:US15551511
申请日:2016-02-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Namryul Jeon , Hyojoon Kim , Hanseok Kim , Wook Kim
Abstract: Provided is a method of configuring a secondary cell (SCell) for a base station (eNB) in a mobile communication system. The method may include: identifying the carrier aggregation (CA) operation mode; identifying the amount of traffic for a user equipment (UE); determining whether to add an SCell in the UE on the basis of the CA operation mode and the traffic amount for the UE; and transmitting an SCell addition request message to the UE according to the determination result. There is also provided a base station applying the above method. In addition, there are provided a user equipment communicating with the base station and an SCell configuration method for the user equipment.
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公开(公告)号:US20180259985A1
公开(公告)日:2018-09-13
申请号:US15841734
申请日:2017-12-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yun-Hyeok Im , Myung-Kyoon Yim , Wook Kim , Kyoung-Min Lee , Kyung-Soo Lee
CPC classification number: G05D23/1931 , G01K13/00 , G06F1/206 , H05K7/20
Abstract: To dynamically manage a temperature of an electronic device, a local temperature is provided by measuring a temperature of a local spot in the electronic device and a reference temperature is provided by measuring a temperature of a reference spot in the electronic device where the reference spot and the local spot are thermally coupled. A target temperature corresponding to a limit value of the reference temperature is adjusted based on the local temperature and a power level of the electronic device is controlled based on the same target temperature. The target temperature may be set to a relatively high value to secure performance of the electronic device when the local temperature is relatively low. Alternatively, the target temperature may be set to a relatively low value to pursue stability of the electronic device when the local temperature is relatively high.
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公开(公告)号:US09459680B2
公开(公告)日:2016-10-04
申请号:US13948691
申请日:2013-07-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyungock Kim , Wook Kim , Jun Seomun , Chungki Oh , JaeHan Jeon , Kyungtae Do , JungYun Choi , Hyosig Won , Kee Sup Kim
CPC classification number: G06F1/3206 , G05D23/1919 , G06F1/20 , G06F1/324 , Y02D10/126
Abstract: A temperature control method of a semiconductor device is provided. The temperature control method includes detecting a temperature of the semiconductor device; activating a reverse body biasing operation in which a body bias voltage applied to a function block of the semiconductor device is regulated, when the detected temperature is greater than a first temperature level; and activating a thermal throttling operation in which at least one of a frequency of a driving clock provided to a function block of the semiconductor device and a driving voltage applied to the function block of the semiconductor device is regulated, when the detected temperature is greater than a second temperature level that is different than the first temperature level.
Abstract translation: 提供了一种半导体器件的温度控制方法。 温度控制方法包括检测半导体器件的温度; 当检测到的温度大于第一温度水平时,激活施加到半导体器件的功能块的体偏置电压的反向体偏置操作; 以及激活热调节操作,其中当检测到的温度大于所述热节流操作时,提供给所述半导体器件的功能块的驱动时钟的频率中的至少一个和施加到所述半导体器件的功能块的驱动电压被调节 与第一温度水平不同的第二温度水平。
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