公开(公告)号：US11782466B2

公开(公告)日：2023-10-10

申请号：US17471378

申请日：2021-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun-Hyeok Im ,  Myung-Kyoon Yim ,  Wook Kim ,  Kyoung-Min Lee ,  Kyung-Soo Lee

IPC: G05D23/19 ,  H05K7/20 ,  G01K13/00 ,  G06F1/20

CPC classification number: G05D23/1931 ,  G01K13/00 ,  G06F1/206 ,  H05K7/20

Abstract: To dynamically manage a temperature of an electronic device, a local temperature is provided by measuring a temperature of a local spot in the electronic device and a reference temperature is provided by measuring a temperature of a reference spot in the electronic device where the reference spot and the local spot are thermally coupled. A target temperature corresponding to a limit value of the reference temperature is adjusted based on the local temperature and a power level of the electronic device is controlled based on the same target temperature. The target temperature may be set to a relatively high value to secure performance of the electronic device when the local temperature is relatively low. Alternatively, the target temperature may be set to a relatively low value to pursue stability of the electronic device when the local temperature is relatively high.

公开(公告)号：US09891855B2

公开(公告)日：2018-02-13

申请号：US15438651

申请日：2017-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hui-Kap Yang ,  Myung-Kyoon Yim ,  Soo-Hwan Kim

IPC: G06F12/00 ,  G06F3/06

CPC classification number: G06F3/0634 ,  G06F1/324 ,  G06F1/3275 ,  G06F1/3296 ,  G06F3/0614 ,  G06F3/0673 ,  G11C11/4074

Abstract: A memory device is provided which is capable of adjusting an operation voltage, and an application processor is provided for controlling the memory device. The memory device may include: a receiving terminal for receiving a voltage control signal from an external source, the voltage control signal being for adjusting an operation voltage level according to an operation speed of the memory device; and a voltage adjustment unit for adjusting a level of an operation voltage of the memory device in response to the voltage control signal. The level of the operation voltage is adjusted before a memory operation is performed at the operation speed corresponding to the adjusted operation voltage.

公开(公告)号：US11119517B2

公开(公告)日：2021-09-14

申请号：US15841734

申请日：2017-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun-Hyeok Im ,  Myung-Kyoon Yim ,  Wook Kim ,  Kyoung-Min Lee ,  Kyung-Soo Lee

IPC: G05D23/19 ,  H05K7/20 ,  G01K13/00 ,  G06F1/20

Abstract: To dynamically manage a temperature of an electronic device, a local temperature is provided by measuring a temperature of a local spot in the electronic device and a reference temperature is provided by measuring a temperature of a reference spot in the electronic device where the reference spot and the local spot are thermally coupled. A target temperature corresponding to a limit value of the reference temperature is adjusted based on the local temperature and a power level of the electronic device is controlled based on the same target temperature. The target temperature may be set to a relatively high value to secure performance of the electronic device when the local temperature is relatively low. Alternatively, the target temperature may be set to a relatively low value to pursue stability of the electronic device when the local temperature is relatively high.

公开(公告)号：US20210405670A1

公开(公告)日：2021-12-30

申请号：US17471378

申请日：2021-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun-Hyeok Im ,  Myung-Kyoon Yim ,  Wook Kim ,  Kyoung-Min Lee ,  Kyung-Soo Lee

IPC: G05D23/19 ,  H05K7/20 ,  G01K13/00 ,  G06F1/20

Abstract: To dynamically manage a temperature of an electronic device, a local temperature is provided by measuring a temperature of a local spot in the electronic device and a reference temperature is provided by measuring a temperature of a reference spot in the electronic device where the reference spot and the local spot are thermally coupled. A target temperature corresponding to a limit value of the reference temperature is adjusted based on the local temperature and a power level of the electronic device is controlled based on the same target temperature. The target temperature may be set to a relatively high value to secure performance of the electronic device when the local temperature is relatively low. Alternatively, the target temperature may be set to a relatively low value to pursue stability of the electronic device when the local temperature is relatively high.

公开(公告)号：US20180259985A1

公开(公告)日：2018-09-13

申请号：US15841734

申请日：2017-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun-Hyeok Im ,  Myung-Kyoon Yim ,  Wook Kim ,  Kyoung-Min Lee ,  Kyung-Soo Lee

IPC: G05D23/19 ,  G01K13/00 ,  H05K7/20

CPC classification number: G05D23/1931 ,  G01K13/00 ,  G06F1/206 ,  H05K7/20

Abstract: To dynamically manage a temperature of an electronic device, a local temperature is provided by measuring a temperature of a local spot in the electronic device and a reference temperature is provided by measuring a temperature of a reference spot in the electronic device where the reference spot and the local spot are thermally coupled. A target temperature corresponding to a limit value of the reference temperature is adjusted based on the local temperature and a power level of the electronic device is controlled based on the same target temperature. The target temperature may be set to a relatively high value to secure performance of the electronic device when the local temperature is relatively low. Alternatively, the target temperature may be set to a relatively low value to pursue stability of the electronic device when the local temperature is relatively high.