Abstract:
Provided are a bump structure includes a first bump and a second bump, a semiconductor package including the same, and a method of manufacturing the same. The bump structure includes: first bump provided on a connection pad of a substrate, the first bump including a plurality of nano-wires extending from the connection pad and a body connecting end portions of the plurality of nano-wires; and a second bump provided on the body of the first bump.
Abstract:
To dynamically manage a temperature of an electronic device, a local temperature is provided by measuring a temperature of a local spot in the electronic device and a reference temperature is provided by measuring a temperature of a reference spot in the electronic device where the reference spot and the local spot are thermally coupled. A target temperature corresponding to a limit value of the reference temperature is adjusted based on the local temperature and a power level of the electronic device is controlled based on the same target temperature. The target temperature may be set to a relatively high value to secure performance of the electronic device when the local temperature is relatively low. Alternatively, the target temperature may be set to a relatively low value to pursue stability of the electronic device when the local temperature is relatively high.
Abstract:
A semiconductor package and an electronic system including the same include a package board having an electric circuit pattern. A semiconductor chip is mounted on the package board and electrically connected with the circuit pattern of the package board. A non-contact temperature detector is provided with the semiconductor package and detects a temperature of an external heat source without making contact with the external heat source. A temperature controller controls the semiconductor chip according to the temperature of the external heat source that is detected by the non-contact temperature detector.
Abstract:
To dynamically manage a temperature of an electronic device, a local temperature is provided by measuring a temperature of a local spot in the electronic device and a reference temperature is provided by measuring a temperature of a reference spot in the electronic device where the reference spot and the local spot are thermally coupled. A target temperature corresponding to a limit value of the reference temperature is adjusted based on the local temperature and a power level of the electronic device is controlled based on the same target temperature. The target temperature may be set to a relatively high value to secure performance of the electronic device when the local temperature is relatively low. Alternatively, the target temperature may be set to a relatively low value to pursue stability of the electronic device when the local temperature is relatively high.
Abstract:
To dynamically manage a temperature of an electronic device, a local temperature is provided by measuring a temperature of a local spot in the electronic device and a reference temperature is provided by measuring a temperature of a reference spot in the electronic device where the reference spot and the local spot are thermally coupled. A target temperature corresponding to a limit value of the reference temperature is adjusted based on the local temperature and a power level of the electronic device is controlled based on the same target temperature. The target temperature may be set to a relatively high value to secure performance of the electronic device when the local temperature is relatively low. Alternatively, the target temperature may be set to a relatively low value to pursue stability of the electronic device when the local temperature is relatively high.
Abstract:
A semiconductor package includes a circuit board having an inner circuit pattern and a plurality of contact pads connected to the inner circuit pattern, at least one integrated circuit (IC) device on the circuit board and making contact with the contact pads, a mold on the circuit board, the mold fixing the IC device to the circuit board, and a surface profile modifier on a surface of the IC device and a surface of the mold, and the surface profile modifier enlarging a surface area of the IC device and the mold to dissipate heat.
Abstract:
To dynamically manage a temperature of an electronic device, a local temperature is provided by measuring a temperature of a local spot in the electronic device and a reference temperature is provided by measuring a temperature of a reference spot in the electronic device where the reference spot and the local spot are thermally coupled. A target temperature corresponding to a limit value of the reference temperature is adjusted based on the local temperature and a power level of the electronic device is controlled based on the same target temperature. The target temperature may be set to a relatively high value to secure performance of the electronic device when the local temperature is relatively low. Alternatively, the target temperature may be set to a relatively low value to pursue stability of the electronic device when the local temperature is relatively high.
Abstract:
A semiconductor package and an electronic system including the same include a package board having an electric circuit pattern. A semiconductor chip is mounted on the package board and electrically connected with the circuit pattern of the package board. A non-contact temperature detector is provided with the semiconductor package and detects a temperature of an external heat source without making contact with the external heat source. A temperature controller controls the semiconductor chip according to the temperature of the external heat source that is detected by the non-contact temperature detector.
Abstract:
A semiconductor package includes a circuit board having an inner circuit pattern and a plurality of contact pads connected to the inner circuit pattern, at least one integrated circuit (IC) device on the circuit board and making contact with the contact pads, a mold on the circuit board, the mold fixing the IC device to the circuit board, and a surface profile modifier on a surface of the IC device and a surface of the mold, and the surface profile modifier enlarging a surface area of the IC device and the mold to dissipate heat.