公开(公告)号：US20080260204A1

公开(公告)日：2008-10-23

申请号：US12090592

申请日：2006-10-18

Applicant: Sang-yoon Lee ,  Min-gu Kang ,  Ssang-gun Lim

Inventor： Sang-yoon Lee ,  Min-gu Kang ,  Ssang-gun Lim

IPC: G06K9/00 ,  H04N5/228

CPC classification number: G01B9/04

Abstract: An image measuring apparatus for enhancing an accuracy of an image captured by an optical system and a method thereof are disclosed. The apparatus includes a CCD camera for capturing the object and outputting the captured image, a lamp for generating white light to illuminate a capturing area of the object, an illumination controller for controlling the lamp to be turned on, a piezoelectric actuator for controlling a minute height of the optical system with respect to the object, an image capturing device for acquiring the image captured by the CCD camera, a driving signal generator for outputting a driving signal to the illumination controller and the piezoelectric actuator when an enable signal is generated from the CCD camera, and an image signal processor for estimating height information of the object from data transmitted from the image capturing unit.

Abstract translation: 公开了一种用于提高由光学系统捕获的图像的精度的图像测量装置及其方法。 该装置包括用于捕获物体并输出拍摄图像的CCD照相机，用于产生白光以照亮被摄体的拍摄区域的灯，用于控制被导通的灯的照明控制器，用于控制分钟的压电致动器 相对于物体的光学系统的高度，用于获取由CCD照相机拍摄的图像的图像捕获装置，当从该照相机产生使能信号时，将驱动信号输出到照明控制器和压电致动器的驱动信号发生器 CCD摄像机和图像信号处理器，用于根据从图像捕获单元发送的数据来估计物体的高度信息。

公开(公告)号：US20070278495A1

公开(公告)日：2007-12-06

申请号：US11756766

申请日：2007-06-01

Applicant: Jang-yeon Kwon ,  Sang-yoon Lee ,  Jong-man Kim ,  Kyung-bae Park ,  Ji-sim Jung

Inventor： Jang-yeon Kwon ,  Sang-yoon Lee ,  Jong-man Kim ,  Kyung-bae Park ,  Ji-sim Jung

IPC: H01L33/00 ,  H01L29/04 ,  H01L21/84

CPC classification number: H01L29/78603 ,  H01L29/78645

Abstract: A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.

Abstract translation: 薄膜晶体管（“TFT”）包括形成在柔性基板上的多晶硅层，其包括源极区，漏极区和沟道区，以及形成在多晶硅层的沟道区上的栅叠层，其中 栅极堆叠包括第一和第二栅极堆叠，并且第一和第二栅极堆叠之间的多晶硅层的区域是偏移区域。 还提供了制造TFT的方法。

公开(公告)号：US08900799B2

公开(公告)日：2014-12-02

申请号：US13588689

申请日：2012-08-17

Applicant: Jong-baek Seon ,  Myung-kwan Ryu ,  Sang-yoon Lee

Inventor： Jong-baek Seon ,  Myung-kwan Ryu ,  Sang-yoon Lee

IPC: G03F7/20 ,  H01L21/46

CPC classification number: G03F7/2002 ,  G03F7/0043 ,  G03F7/40 ,  H01L21/02554 ,  H01L21/02581 ,  H01L21/02628 ,  H01L21/46 ,  H01L29/7869

Abstract: A thin film patterning method may include forming a thin film by coating a precursor solution containing a precursor of metal oxide onto a substrate, soft baking the thin film, exposing the thin film to light by using a photomask, developing the thin film, and hard baking the developed thin film. The precursor may include metal acetate, for example, a zinc acetate-based material, and the metal oxide thin film may include zinc oxide (ZnO).

Abstract translation: 薄膜图案化方法可以包括通过将含有金属氧化物前体的前体溶液涂布在基材上来形成薄膜，软化该薄膜，通过使用光掩模将该薄膜曝光，使薄膜显影，并使硬 烘焙发达的薄膜。 前体可以包括金属乙酸盐，例如乙酸锌基材料，并且金属氧化物薄膜可以包括氧化锌（ZnO）。

公开(公告)号：US08847206B2

公开(公告)日：2014-09-30

申请号：US12656685

申请日：2010-02-12

Applicant: Jeong-il Park ,  Byung-wook Yoo ,  Do-hwan Kim ,  Sang-yoon Lee ,  Bang-lin Lee ,  Eun-jeong Jeong

Inventor： Jeong-il Park ,  Byung-wook Yoo ,  Do-hwan Kim ,  Sang-yoon Lee ,  Bang-lin Lee ,  Eun-jeong Jeong

IPC: H01L29/72

CPC classification number: H01L51/102 ,  B82Y30/00 ,  H01L51/0023 ,  H01L51/0512 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/31504 ,  Y10T428/31678

Abstract: Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.

Abstract translation: 公开了一种表面改性剂，其包括在一个末端具有乙炔基的化合物，使用表面改性剂制造的层压结构，该层压结构体的制造方法和包含该层压结构的晶体管。

公开(公告)号：US08779428B2

公开(公告)日：2014-07-15

申请号：US13167299

申请日：2011-06-23

Applicant: Eok-su Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu

Inventor： Eok-su Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu

IPC: H01L29/04

CPC classification number: H01L29/78696 ,  H01L29/41733 ,  H01L29/78648 ,  H01L29/78651 ,  H01L29/78681 ,  H01L29/7869

Abstract: A transistor includes a first active layer having a first channel region and a second active layer having a second channel region. A first gate of the transistor is configured to control electrical characteristics of at least the first active layer and a second gate is configured to control electrical characteristics of at least the second active layer. A source electrode contacts the first and second active layers. A drain electrode also contacts the first and second active layers.

Abstract translation: 晶体管包括具有第一沟道区的第一有源层和具有第二沟道区的第二有源层。 晶体管的第一栅极被配置为控制至少第一有源层的电特性，并且第二栅极被配置为控制至少第二有源层的电特性。 源电极接触第一和第二有源层。 漏电极也接触第一和第二有源层。

公开(公告)号：US08373158B2

公开(公告)日：2013-02-12

申请号：US12656685

申请日：2010-02-12

Applicant: Jeong-il Park ,  Byung-wook Yoo ,  Do-hwan Kim ,  Sang-yoon Lee ,  Bang-lin Lee ,  Eun-jeong Jeong

Inventor： Jeong-il Park ,  Byung-wook Yoo ,  Do-hwan Kim ,  Sang-yoon Lee ,  Bang-lin Lee ,  Eun-jeong Jeong

IPC: H01L29/72

Abstract: Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.

公开(公告)号：US08263978B2

公开(公告)日：2012-09-11

申请号：US12453295

申请日：2009-05-06

Applicant: Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC classification number: H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

Abstract translation: 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。

公开(公告)号：US08155483B2

公开(公告)日：2012-04-10

申请号：US12090592

申请日：2006-10-18

Applicant: Sang-yoon Lee ,  Min-gu Kang ,  Ssang-gun Lim

Inventor： Sang-yoon Lee ,  Min-gu Kang ,  Ssang-gun Lim

IPC: G06K9/20

CPC classification number: G01B9/04

Abstract: An image measuring apparatus for enhancing an accuracy of an image captured by an optical system and a method thereof are disclosed. The apparatus includes a CCD camera for capturing the object and outputting the captured image, a lamp for generating white light to illuminate a capturing area of the object, an illumination controller for controlling the lamp to be turned on, a piezoelectric actuator for controlling a minute height of the optical system with respect to the object, an image capturing device for acquiring the image captured by the CCD camera, a driving signal generator for outputting a driving signal to the illumination controller and the piezoelectric actuator when an enable signal is generated from the CCD camera, and an image signal processor for estimating height information of the object from data transmitted from the image capturing unit.

Abstract translation: 公开了一种用于提高由光学系统捕获的图像的精度的图像测量装置及其方法。 该装置包括用于捕获物体并输出拍摄图像的CCD照相机，用于产生白光以照亮被摄体的拍摄区域的灯，用于控制被导通的灯的照明控制器，用于控制分钟的压电致动器 相对于物体的光学系统的高度，用于获取由CCD照相机拍摄的图像的图像捕获装置，当从该照相机产生使能信号时，将驱动信号输出到照明控制器和压电致动器的驱动信号发生器 CCD摄像机和图像信号处理器，用于根据从图像捕获单元发送的数据来估计物体的高度信息。

公开(公告)号：US08106397B2

公开(公告)日：2012-01-31

申请号：US11756766

申请日：2007-06-01

Applicant: Jang-yeon Kwon ,  Sang-yoon Lee ,  Jong-man Kim ,  Kyung-bae Park ,  Ji-sim Jung

Inventor： Jang-yeon Kwon ,  Sang-yoon Lee ,  Jong-man Kim ,  Kyung-bae Park ,  Ji-sim Jung

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC classification number: H01L29/78603 ,  H01L29/78645

Abstract: A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.

Abstract translation: 薄膜晶体管（“TFT”）包括形成在柔性基板上的多晶硅层，其包括源极区，漏极区和沟道区，以及形成在多晶硅层的沟道区上的栅叠层，其中 栅极堆叠包括第一和第二栅极堆叠，并且第一和第二栅极堆叠之间的多晶硅层的区域是偏移区域。 还提供了制造TFT的方法。

公开(公告)号：US08102476B2

公开(公告)日：2012-01-24

申请号：US12153657

申请日：2008-05-22

Applicant: Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

Inventor： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

IPC: G02F1/1333

CPC classification number: G02F1/136213 ,  G02F2203/01

Abstract: A display device including an oxide semiconductor thin film transistor is provided. The display device includes at least one thin film transistor, and at least one storage capacitor. The storage capacitor includes a storage electrode formed of a transparent oxide semiconductor, and a pixel electrode over the storage electrode. The pixel electrode may be separated from the storage electrode by a desired distance.

Abstract translation: 提供了包括氧化物半导体薄膜晶体管的显示装置。 显示装置包括至少一个薄膜晶体管和至少一个存储电容器。 存储电容器包括由透明氧化物半导体形成的存储电极和存储电极之上的像素电极。 像素电极可以与存储电极分离所需的距离。