公开(公告)号：US07611788B2

公开(公告)日：2009-11-03

申请号：US11595570

申请日：2006-11-09

Applicant: Hideaki Kikuchi ,  Masaaki Sakano ,  Yasuhiro Watanabe ,  Satoshi Tanimoto

Inventor： Hideaki Kikuchi ,  Masaaki Sakano ,  Yasuhiro Watanabe ,  Satoshi Tanimoto

IPC: H01M8/04 ,  H01M8/00 ,  H01M2/14

CPC classification number: H01M8/0267 ,  H01M8/0258 ,  H01M8/04029 ,  H01M8/04044 ,  H01M8/241 ,  H01M8/242 ,  H01M8/2483 ,  H01M2008/1095

Abstract: This fuel cell stack includes: a coolant-supplying penetration hole and a coolant-discharging penetration hole each communicating with a coolant passage and each penetrates unit fuel cells in a stacking direction. A coolant-supplying penetration hole and a coolant-discharging penetration hole are arranged in a horizontal direction opposing with each other so as to sandwich a power generating region. The fuel cell stack further includes: an air draining penetration hole communicating with the coolant passage and arranged such that at least one part thereof is located at a higher position than an uppermost position of the coolant passage, and penetrates the unit fuel cells in the stacking direction; and a coolant draining penetration hole communicating with the coolant passage and arranged such that at least one part thereof is located at a lower position than a lowermost position of the coolant passage, and penetrates the unit fuel cells in the stacking direction.

Abstract translation: 该燃料电池堆包括：冷却剂供给贯通孔和冷却剂排出贯通孔，其各自与冷却剂通路连通，并且各层在层叠方向上贯通单元燃料电池。 冷却剂供给贯通孔和冷却剂排出贯通孔在水平方向上彼此相对配置以夹住发电区域。 燃料电池堆还包括：与冷却剂通道连通的排气通孔，其布置成使得其至少一部分位于比冷却剂通道的最上位置更高的位置，并且在堆叠中穿透单元燃料电池 方向; 以及冷却剂排出贯通孔，其与冷却剂通路连通并且布置成使得其至少一部分位于比冷却剂通道的最低位置更低的位置处，并且沿堆叠方向穿透单元燃料电池。

公开(公告)号：US07535025B2

公开(公告)日：2009-05-19

申请号：US11003599

申请日：2004-12-06

Applicant: Satoshi Tanimoto ,  Hideyo Okushi

Inventor： Satoshi Tanimoto ,  Hideyo Okushi

IPC: H01L29/24

CPC classification number: H01L29/66068 ,  H01L29/1608 ,  H01L29/7395 ,  H01L29/7828 ,  H01L29/94

Abstract: In silicon carbide semiconductor device and manufacturing method therefor, a metal electrode which is another than a gate electrode and which is contacted with a singlecrystalline silicon carbide substrate is treated with a predetermined heat process at a temperature which is lower than a thermal oxidization temperature by which a gate insulating film is formed and is sufficient to carry out a contact annealing between the singlecrystalline silicon carbide substrate and a metal after a whole surrounding of the gate insulating film is enclosed with the singlecrystalline silicon carbide substrate, a field insulating film, and the gate electrode. The present invention is applicable to a MOS capacitor, an n channel planar power MOSFET, and an n channel planar power IGBT.

Abstract translation: 在碳化硅半导体器件及其制造方法中，以与栅极电极不同且与单晶碳化硅基板接触的金属电极在预定的热处理下，在低于热氧化温度的温度下进行处理， 形成栅极绝缘膜，并且足以在单晶碳化硅衬底和金属之间进行接触退火，整个栅极绝缘膜周围被单晶碳化硅衬底，场绝缘膜和栅极封闭 电极。 本发明可应用于MOS电容器，n沟道平面功率MOSFET和n沟道平面功率IGBT。

公开(公告)号：US20080292941A1

公开(公告)日：2008-11-27

申请号：US12126523

申请日：2008-05-23

Applicant: Masaru ODA ,  Masahiro Mohri ,  Hiroaki Ohta ,  Yasuhiro Watanabe ,  Satoshi Tanimoto ,  Nobuhiro Saito

Inventor： Masaru ODA ,  Masahiro Mohri ,  Hiroaki Ohta ,  Yasuhiro Watanabe ,  Satoshi Tanimoto ,  Nobuhiro Saito

IPC: H01M2/00

CPC classification number: H01M8/026 ,  H01M8/0263 ,  H01M2008/1095

Abstract: An oxygen-containing gas supply passage and an oxygen-containing gas discharge passage extend through a set of diagonal positions of a first metal separator, and a fuel gas supply passage and a fuel gas discharge passage extend through the other set of diagonal positions of the first metal separator. A fuel gas flow field is connected to the fuel gas supply passage through an inlet buffer at an upper position, and connected to the fuel gas discharge passage through an outlet buffer at a lower position. The inlet buffer includes a first inlet buffer area adjacent to the fuel gas supply passage and a second inlet buffer area adjacent to the fuel gas flow field. Grooves of the first inlet buffer area are deeper than grooves of the second inlet buffer area in the stacking direction.

Abstract translation: 含氧气体供给通道和含氧气体排出通道延伸穿过第一金属分离器的一组对角位置，并且燃料气体供应通道和燃料气体排出通道延伸穿过另一组对角线位置 第一金属分离器。 燃料气体流场通过上部位置的入口缓冲器连接到燃料气体供应通道，并且通过下部位置处的出口缓冲器连接到燃料气体排出通道。 入口缓冲器包括与燃料气体供应通道相邻的第一入口缓冲区域和与燃料气体流场相邻的第二入口缓冲区域。 第一入口缓冲区的槽比层叠方向上的第二入口缓冲区的槽深。

公开(公告)号：US20070154758A1

公开(公告)日：2007-07-05

申请号：US11595570

申请日：2006-11-09

Applicant: Hideaki Kikuchi ,  Masaaki Sakano ,  Yasuhiro Watanabe ,  Satoshi Tanimoto

Inventor： Hideaki Kikuchi ,  Masaaki Sakano ,  Yasuhiro Watanabe ,  Satoshi Tanimoto

IPC: H01M8/04 ,  H01M8/10

CPC classification number: H01M8/0267 ,  H01M8/0258 ,  H01M8/04029 ,  H01M8/04044 ,  H01M8/241 ,  H01M8/242 ,  H01M8/2483 ,  H01M2008/1095

Abstract: This fuel cell stack includes: a coolant-supplying penetration hole and a coolant-discharging penetration hole each communicating with a coolant passage and each penetrates unit fuel cells in a stacking direction. A coolant-supplying penetration hole and a coolant-discharging penetration hole are arranged in a horizontal direction opposing with each other so as to sandwich a power generating region. The fuel cell stack further includes: an air draining penetration hole communicating with the coolant passage and arranged such that at least one part thereof is located at a higher position than an uppermost position of the coolant passage, and penetrates the unit fuel cells in the stacking direction; and a coolant draining penetration hole communicating with the coolant passage and arranged such that at least one part thereof is located at a lower position than a lowermost position of the coolant passage, and penetrates the unit fuel cells in the stacking direction.

Abstract translation: 该燃料电池堆包括：冷却剂供给贯通孔和冷却剂排出贯通孔，其各自与冷却剂通路连通，并且各层在层叠方向上贯通单元燃料电池。 冷却剂供给贯通孔和冷却剂排出贯通孔在水平方向上彼此相对配置以夹住发电区域。 燃料电池堆还包括：与冷却剂通道连通的排气通孔，其布置成使得其至少一部分位于比冷却剂通道的最上位置更高的位置，并且在堆叠中穿透单元燃料电池 方向; 以及冷却剂排出贯通孔，其与冷却剂通路连通并且布置成使得其至少一部分位于比冷却剂通道的最低位置更低的位置处，并且沿堆叠方向穿透单元燃料电池。

公开(公告)号：US06285950B1

公开(公告)日：2001-09-04

申请号：US09311330

申请日：1999-05-13

Applicant: Satoshi Tanimoto

Inventor： Satoshi Tanimoto

IPC: G01C2134

CPC classification number: G01C21/34

Abstract: A vehicle navigation system estimates a travel time to a destination. Estimation of a travel time to a destination includes two steps of calculation. First, a travel time to an intermediate point forward of the present vehicle position is calculated based on the current average speed. Second, a travel time to the destination from the intermediate point is calculated based on the costs of road segments. A travel time to the destination from the present vehicle position is a sum of the travel time obtained by the first calculation and the travel time obtained by the second calculation. Since the current average speed reflects the road conditions to which the vehicle is presently subjected, the travel time to the intermediate point calculated with the current average speed is more accurate than a travel time that would be calculated by adding the costs between the present vehicle position and the intermediate position. As a result, a sum of the travel times obtained by the first calculation and the second calculation is more accurate than a travel time that is calculated by adding the costs throughout the road segments between the present vehicle position and the destination.

Abstract translation: 车辆导航系统估计到目的地的行车时间。 到达目的地的旅行时间的估计包括计算的两个步骤。 首先，基于当前的平均速度来计算到当前车辆位置前方的中间点的行驶时间。 其次，根据道路段的成本计算从中间点到目的地的行车时间。 从当前车辆位置到目的地的行驶时间是通过第一次计算获得的行驶时间和通过第二次计算获得的行驶时间的总和。 由于当前的平均速度反映了车辆当前遭受的道路状况，所以以当前平均速度计算的到中间点的行驶时间比通过将当前车辆位置 和中间位置。 结果，通过第一计算和第二计算获得的行进时间的总和比通过在当前车辆位置和目的地之间的整个路段增加成本而计算的行驶时间更精确。

公开(公告)号：US08497218B2

公开(公告)日：2013-07-30

申请号：US13299136

申请日：2011-11-17

Applicant: Satoshi Tanimoto ,  Noriaki Kawamoto ,  Takayuki Kitou ,  Mineo Miura

Inventor： Satoshi Tanimoto ,  Noriaki Kawamoto ,  Takayuki Kitou ,  Mineo Miura

IPC: H01L21/316

CPC classification number: H01L29/66068 ,  H01L21/049 ,  H01L21/31666 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7395 ,  H01L29/7802

Abstract: A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched between the silicon carbide substrate (1) and the gate electrode (7) to thereby form a gate structure, the ONO insulating film (9) including the followings formed sequentially from the silicon carbide substrate (1): a) a first oxide silicon film (O) (10), b) an SiN film (N) (11), and c) an SiN thermally-oxidized film (O) (12, 12a, 12b). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) (10) and in a vicinity of the silicon carbide substrate (1), and ii) in an interface between the silicon carbide substrate (1) and the first oxide silicon film (O) (10).

公开(公告)号：US08275105B2

公开(公告)日：2012-09-25

申请号：US12415796

申请日：2009-03-31

Applicant: Susumu Chida ,  Satoshi Tanimoto ,  Tokunori Kato

Inventor： Susumu Chida ,  Satoshi Tanimoto ,  Tokunori Kato

IPC: H04M3/42

CPC classification number: H04M1/2535 ,  H04M3/42178 ,  H04M2250/64

Abstract: In an IP telephone terminal, a function implementation controlling unit is configured so as to be capable of controlling implementation of a function instructed by a file received via IP telephone communications when the communicating unit receives the file. The configuration data storing unit stores configuration data that is used by the function implementation controlling unit to implement the function. The configuration data acquisition controlling unit performs control to acquire configuration data from the configuration data storing unit when a communicating unit receives a read file that is transmitted from an external IP telephone terminal. The response file generation controlling unit performs control to generate a response file including the configuration data. The response file transmission controlling unit controls a communicating unit to transmit the response file to the external IP telephone terminal that has transmitted the read file. The update controlling unit performs, when the communicating unit receives a write file, control to update the configuration data based on the write file that is transmitted from the external IP telephone terminal that has received the response file.

Abstract translation: 在IP电话终端中，功能实现控制单元被配置为当通信单元接收到文件时能够控制通过IP电话通信接收的文件所指示的功能的实现。 配置数据存储单元存储由功能实现控制单元用于实现该功能的配置数据。 当通信单元接收到从外部IP电话终端发送的读取文件时，配置数据获取控制单元执行控制以从配置数据存储单元获取配置数据。 响应文件生成控制单元执行控制以生成包括配置数据的响应文件。 响应文件传输控制单元控制通信单元将响应文件发送到已经发送读取文件的外部IP电话终端。 当通信单元接收到写入文件时，更新控制单元执行基于从已经接收到响应文件的外部IP电话终端发送的写入文件来更新配置数据的控制。

公开(公告)号：US07736785B2

公开(公告)日：2010-06-15

申请号：US12126523

申请日：2008-05-23

Applicant: Masaru Oda ,  Masahiro Mohri ,  Hiroaki Ohta ,  Yasuhiro Watanabe ,  Satoshi Tanimoto ,  Nobuhiro Saito

Inventor： Masaru Oda ,  Masahiro Mohri ,  Hiroaki Ohta ,  Yasuhiro Watanabe ,  Satoshi Tanimoto ,  Nobuhiro Saito

IPC: H01M2/18 ,  H01M2/00 ,  H01M2/14 ,  H01M8/00

CPC classification number: H01M8/026 ,  H01M8/0263 ,  H01M2008/1095

Abstract: An oxygen-containing gas supply passage and an oxygen-containing gas discharge passage extend through a set of diagonal positions of a first metal separator, and a fuel gas supply passage and a fuel gas discharge passage extend through the other set of diagonal positions of the first metal separator. A fuel gas flow field is connected to the fuel gas supply passage through an inlet buffer at an upper position, and connected to the fuel gas discharge passage through an outlet buffer at a lower position. The inlet buffer includes a first inlet buffer area adjacent to the fuel gas supply passage and a second inlet buffer area adjacent to the fuel gas flow field. Grooves of the first inlet buffer area are deeper than grooves of the second inlet buffer area in the stacking direction.

Abstract translation: 含氧气体供给通道和含氧气体排出通道延伸穿过第一金属分离器的一组对角位置，并且燃料气体供应通道和燃料气体排出通道延伸穿过另一组对角线位置 第一金属分离器。 燃料气体流场通过上部位置的入口缓冲器连接到燃料气体供应通道，并且通过下部位置处的出口缓冲器连接到燃料气体排出通道。 入口缓冲器包括与燃料气体供应通道相邻的第一入口缓冲区域和与燃料气体流场相邻的第二入口缓冲区域。 第一入口缓冲区的槽比层叠方向上的第二入口缓冲区的槽深。

公开(公告)号：US07684991B2

公开(公告)日：2010-03-23

申请号：US11326183

申请日：2006-01-05

Applicant: Luis Stohr ,  Satoshi Tanimoto

Inventor： Luis Stohr ,  Satoshi Tanimoto

IPC: G10L11/00 ,  G10L13/00 ,  G10L13/08

CPC classification number: G06F17/30775 ,  G06F17/30749 ,  G10L13/00

Abstract: A digital audio file search method and apparatus for digital audio files is provided that allows a user to navigate the audio files by generating speech sounds related to the information of the audio files to facilitate searching and playback. The digital audio file search method and apparatus searches for audio files in a portable digital audio player in combination with an automobile audio system through speech sounds by utilizing text-to-speech processing and by prompting response from a user in response to the generated speech sounds. The text-to-speech technology is utilized to generate the speech sound based on tag-data of the audio files. When hearing the speech sounds, the user gives instruction for searching the files without being distracted from driving the automobile.

Abstract translation: 提供了一种用于数字音频文件的数字音频文件搜索方法和装置，其允许用户通过产生与音频文件的信息相关的语音来导航音频文件，以便于搜索和重放。 数字音频文件搜索方法和装置通过利用文本到语音处理并通过响应于所产生的语音来提示用户的响应，通过语音来搜索便携式数字音频播放器中的音频文件与汽车音响系统 。 文本到语音技术被用于基于音频文件的标签数据产生语音。 当听到语音时，用户给出了搜索文件的指令，而不会分散驾驶汽车的注意力。

公开(公告)号：US20090289355A1

公开(公告)日：2009-11-26

申请号：US12091717

申请日：2006-09-22

Applicant: Norihiko Kiritani ,  Satoshi Tanimoto ,  Kazuo Arai

Inventor： Norihiko Kiritani ,  Satoshi Tanimoto ,  Kazuo Arai

IPC: H01L23/48 ,  B05C13/02

CPC classification number: H01L21/0485 ,  H01L21/67115 ,  H01L21/68735 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor manufacturing apparatus which performs a rapid heat treatment in which metallic thin films 11 and 12 to be metallic electrodes are formed on a top surface and a bottom surface of a silicon carbide semiconductor substrate 10, and thereafter, the silicon carbide semiconductor substrate 10 is heated. The semiconductor manufacturing apparatus is configured such that the silicon carbide semiconductor substrate 10 is held by a holding structure 20 by means of a contact with an exterior of a region formed with the metallic thin films 11 and 12 on the silicon carbide semiconductor substrate 10, and the held silicon carbide semiconductor substrate 10 is placed in an interior of a heating chamber of the semiconductor manufacturing apparatus.

Abstract translation: 执行快速热处理的半导体制造装置，其中在碳化硅半导体衬底10的顶表面和底表面上形成金属电极的金属薄膜11和12，其后，碳化硅半导体衬底10是 加热。 半导体制造装置被构造成使得碳化硅半导体衬底10通过与在碳化硅半导体衬底10上形成有金属薄膜11和12的区域的外部接触的保持结构20来保持，以及 将保持的碳化硅半导体衬底10放置在半导体制造装置的加热室的内部。