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    MAGNETORESISTIVE SENSOR SHIELD
    31.
    发明申请
    MAGNETORESISTIVE SENSOR SHIELD 有权
    磁传感器屏蔽

    公开(公告)号：US20150170686A1

    公开(公告)日：2015-06-18

    申请号：US14105922

    申请日：2013-12-13

    Applicant: Seagate Technology LLC

    Inventor： Eric W. Singleton ,  Liwen Tan ,  Jae-Young Yi

    IPC: G11B5/39

    CPC classification number: G11B5/3912 ,  G01R33/007 ,  G01R33/025 ,  G01R33/098 ,  G11B5/3916 ,  G11B5/398 ,  G11B2005/3996 ,  H01F10/3204 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121

    Abstract: Implementations disclosed herein provide for a magnetoresistive (MR) sensor including a synthetic antiferromagnetic (SAF) structure that is magnetically coupled a side shield element. The SAF structure includes at least one magnetic amorphous layer that is an alloy of a ferromagnetic material and a refractory material. The amorphous magnetic layer may be in contact with a non-magnetic layer and antiferromagnetically coupled to a layer in contact with an opposite surface of the non-magnetic layer.

    Abstract translation: 本文公开的实施例提供了一种磁阻（MR）传感器，其包括磁耦合侧屏蔽元件的合成反铁磁（SAF）结构。 SAF结构包括至少一个磁性非晶层，其是铁磁材料和耐火材料的合金。 非晶磁性层可以与非磁性层接触并且与与非磁性层的相反表面接触的层反铁磁耦合。

    MAGNETORESISTIVE SENSOR
    32.
    发明申请
    MAGNETORESISTIVE SENSOR 有权
    磁传感器

    公开(公告)号：US20150084624A1

    公开(公告)日：2015-03-26

    申请号：US14036995

    申请日：2013-09-25

    Applicant: Seagate Technology LLC

    Inventor： Eric W. Singleton ,  Liwen Tan ,  Jae-Young Yi ,  Konstantin Nikolaev

    IPC: G01R33/09 ,  G01R33/00

    CPC classification number: G11B5/3912 ,  G01R33/0017 ,  G01R33/09 ,  G01R33/098

    Abstract: Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for one or more alloyed layers that each include a ferromagnetic material and a refractory material. The alloyed layers are provided adjacent to a shield element or between soft magnetic layers of the sensor stack.

    Abstract translation: 通过提供一个或多个合金层，每个包含铁磁材料和耐火材料，本文公开的实施方式允许由磁阻（MR）传感器检测的信号得到改善。 合金层邻近屏蔽元件或传感器堆叠的软磁层之间设置。

    READ SENSOR FOR RECORDING HEAD
    34.
    发明申请
    READ SENSOR FOR RECORDING HEAD 审中-公开
    读取传感器用于记录头

    公开(公告)号：US20140168818A1

    公开(公告)日：2014-06-19

    申请号：US13720712

    申请日：2012-12-19

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Victor Boris Sapozhnikov ,  Scott Wilson Stokes ,  Jae-Young Yi ,  Mohammed Shariat Ullah Patwari ,  Yonghua Chen

    IPC: G11B5/147

    CPC classification number: G11B5/3909 ,  G11B5/3932

    Abstract: Implementations described and claimed herein provide a read sensor structure having a synthetic anti-ferromagnetic (SAF) structure with a pinning that is canted with respect to an air bearing surface (ABS) of the read sensor. In an implementation of the read sensor, the angle between the pinning direction of a reference layer (RL) and the pinning direction of a free layer (FL) is obtuse.

    Abstract translation: 本文描述和要求保护的实施例提供了具有合成反铁磁（SAF）结构的读取传感器结构，其具有相对于读取传感器的空气轴承表面（ABS）倾斜的钉扎。 在读取传感器的实现中，参考层（RL）的钉扎方向与自由层（FL）的钉扎方向之间的角度是钝的。

    Fabrication of a multi-layered magnetic element
    36.
    发明授权
    Fabrication of a multi-layered magnetic element 有权

    公开(公告)号：US10211034B2

    公开(公告)日：2019-02-19

    申请号：US15819146

    申请日：2017-11-21

    Applicant: Seagate Technology LLC

    Inventor： Jae-Young Yi ,  Eric W. Singleton

    IPC: C23C14/54 ,  H01J37/34 ,  C23C14/18

    Abstract: A fabrication method that includes cryogenically cooling a multi-layered structure, which includes a barrier layer, in a multi-purpose chamber having a single enclosure around at least one sputtering target and a substrate support. The method also includes depositing a ferromagnetic layer over the barrier layer of the cryogenically cooled multi-layered structure in the single enclosure when the multi-layered structure is supported on the substrate support.

    Magnetic element with reduced shield-to-shield spacing
    37.
    发明授权
    Magnetic element with reduced shield-to-shield spacing 有权

    公开(公告)号：US10147447B2

    公开(公告)日：2018-12-04

    申请号：US15072489

    申请日：2016-03-17

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Eric Walter Singleton ,  Zhiguo Ge ,  Shaun Eric McKinlay ,  Jae-Young Yi

    IPC: B44C1/22 ,  G11B5/31 ,  G11B5/39

    Abstract: A magnetic stack is disclosed. The magnetic stack includes a magnetically responsive lamination that includes a ferromagnetic free layer, a synthetic antiferromagnetic (SAF) structure, and a spacer layer positioned between the ferromagnetic free layer and the SAF structure. The magnetically responsive lamination is separated from a sensed data bit stored in an adjacent medium by an air bearing surface (ABS). The stack also includes a first antiferromagnetic (AFM) structure coupled to the SAF structure a predetermined offset distance from the ABS, and a second AFM structure that is separated from the first AFM structure by a first shield layer.

    Magnetic element with reduced shield-to-shield spacing
    39.
    发明授权
    Magnetic element with reduced shield-to-shield spacing 有权
    磁性元件具有减小的屏蔽间隔距离

    公开(公告)号：US09305578B1

    公开(公告)日：2016-04-05

    申请号：US13956912

    申请日：2013-08-01

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Eric Walter Singleton ,  Zhiguo Ge ,  Shaun Eric McKinlay ,  Jae-Young Yi

    IPC: G11B5/39

    CPC classification number: G11B5/3163 ,  G11B5/3912 ,  G11B5/3932 ,  G11B5/398

    Abstract: A magnetic stack is disclosed. The magnetic stack includes a magnetically responsive lamination that includes a ferromagnetic free layer, a synthetic antiferromagnetic (SAF) structure, and a spacer layer positioned between the ferromagnetic free layer and the SAF structure. The magnetically responsive lamination is separated from a sensed data bit stored in an adjacent medium by an air bearing surface (ABS). The stack also includes a first antiferromagnetic (AFM) structure coupled to the SAF structure a predetermined offset distance from the ABS, and a second AFM structure that is separated from the first AFM structure by a first shield layer.

    Abstract translation: 公开了磁性堆叠。 磁性堆叠包括磁响应层压，其包括铁磁自由层，合成反铁磁（SAF）结构和位于铁磁性自由层和SAF结构之间的间隔层。 磁响应层压件通过空气轴承表面（ABS）与存储在相邻介质中的感测数据位分离。 堆叠还包括耦合到SAF结构与ABS的预定偏移距离的第一反铁磁（AFM）结构，以及通过第一屏蔽层与第一AFM结构分离的第二AFM结构。

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