公开(公告)号：US09806099B2

公开(公告)日：2017-10-31

申请号：US15275687

申请日：2016-09-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Hideaki Shishido ,  Jun Koyama

IPC: H01L29/12 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

公开(公告)号：US09797931B2

公开(公告)日：2017-10-24

申请号：US14844458

申请日：2015-09-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiko Takemura ,  Hiroyuki Miyake

IPC: G09G3/3233 ,  G01R19/10 ,  G01R19/00 ,  G09G3/20

CPC classification number: G01R19/10 ,  G01R19/0092 ,  G09G3/2092 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2320/045 ,  G09G2330/12 ,  G09G2360/14 ,  G09G2360/142

Abstract: To provide a measurement method of characteristics of an electrical element which causes variation in the luminance of pixels. In a device which includes components (pixels) arranged in a matrix and a wiring and where each component is capable of supplying current to the wiring through an electrical element included in each component, supply and non-supply of current of N components are individually set and current flowing through the wiring is measured N times. In the respective N measurements, combinations of the supply and non-supply of current in N components capable of supplying current to the wiring differ from one another. The amount of current flowing through each electrical element is obtained based on current obtained by the N measurements and the combinations of supply and non-supply of current in the N measurements.

公开(公告)号：US09742378B2

公开(公告)日：2017-08-22

申请号：US13922685

申请日：2013-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshifumi Tanada ,  Manabu Sato ,  Hiroyuki Miyake ,  Toshinari Sasaki ,  Kenichi Okazaki ,  Junichi Koezuka ,  Shunpei Yamazaki

IPC: H03K3/01 ,  G11C19/28 ,  G09G3/36

CPC classification number: H03K3/01 ,  G09G3/3688 ,  G11C19/28

Abstract: A highly reliable semiconductor device in which a shift in threshold voltage of a transistor due to deterioration can be inhibited is provided. A pulse output circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor. A clock signal is supplied to a drain of the first transistor. A first power supply potential is applied to a source of the second transistor, and a drain of the second transistor is connected to the drain of the first transistor. A second power supply potential is applied to a drain of the third transistor. The first power supply potential is applied to a source of the fourth transistor, and a drain of the fourth transistor is connected to the drain of the third transistor. The first power supply potential is applied to a source of the fifth transistor, and a drain of the fifth transistor is connected to a gate of the third transistor. One of a source and a drain of the sixth transistor is connected to the drain of the first transistor, and the other of the source and the drain of the sixth transistor is connected to the gate of the third transistor. The first transistor and the third transistor include back gates connected to each other. The first to sixth transistors have the same conductivity type.

公开(公告)号：US09666678B2

公开(公告)日：2017-05-30

申请号：US13799246

申请日：2013-03-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

IPC: H01L29/26 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/26 ,  G06K19/07758 ,  G11C7/00 ,  G11C19/28 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/0883 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2223/6677 ,  H02M3/07

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

公开(公告)号：US09666655B2

公开(公告)日：2017-05-30

申请号：US15140544

申请日：2016-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake

IPC: H01L29/786 ,  H01L27/32 ,  G09G3/3258 ,  G09G3/3233

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G3/3258 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/0262 ,  G09G2320/0233 ,  G09G2320/043 ,  G09G2330/021 ,  H01L29/78648 ,  H01L29/7869

Abstract: A display device includes a transistor including first and second gates. A first terminal of the transistor is electrically connected to a third wiring. A first switch controls electrical connection between a first wiring and the first gate. A second switch controls electrical connection between a second wiring and the second gate. A third switch controls electrical connection between the first gate and a second terminal of the transistor. A fourth switch controls electrical connection between a fifth wiring and the second terminal of the transistor. A first capacitor retains a potential difference between the first gate and the second terminal of the transistor. A second capacitor retains a potential difference between the first gate and the second gate. A first terminal of the light-emitting element is electrically connected to the second terminal of the transistor. A second terminal of the light-emitting element is electrically connected to a fourth wiring.

公开(公告)号：US20170148402A1

公开(公告)日：2017-05-25

申请号：US15366368

申请日：2016-12-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake ,  Kouhei TOYOTAKA ,  Shunpei YAMAZAKI

IPC: G09G3/36 ,  H01L27/12 ,  G11C19/28

CPC classification number: G09G3/3648 ,  G09G3/3677 ,  G09G2300/0809 ,  G09G2310/0286 ,  G09G2310/0291 ,  G11C19/28 ,  H01L27/1222 ,  H01L27/124

Abstract: To provide a semiconductor device including a narrowed bezel obtained by designing a gate driver circuit. A gate driver of a display device includes a shift register unit, a demultiplexer circuit, and n signal lines. By connecting the n signal lines for transmitting clock signals to one stage of the shift register unit, (n−3) output signals can be output. The larger n becomes, the smaller the rate of signal lines for transmitting clock signals which do not contribute to output becomes; accordingly, the area of the shift register unit part is small compared to a conventional structure in which one stage of a shift register unit outputs one output signal. Therefore, the gate driver circuit can have a narrow bezel.

公开(公告)号：US09659526B2

公开(公告)日：2017-05-23

申请号：US14479630

申请日：2014-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake

IPC: G09G3/30 ,  G09G3/3233

CPC classification number: G09G3/3233 ,  G09G2300/0417 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0291 ,  G09G2320/0233 ,  G09G2320/0295 ,  G09G2320/043

Abstract: A light-emitting device is provided, which is capable of correcting variation in luminance among pixels due to variation in electrical characteristics, such as threshold voltage or mobility, among driving transistors in a period where image display is performed. The light-emitting device includes a pixel; a first circuit configured to generate a signal including information about a value of current extracted from the pixel; and a second circuit configured to correct an image signal in accordance with the signal. The pixel includes a light-emitting element; a transistor whose drain current has a value determined in accordance with the image signal; a first switch configured to control supply of the drain current to the light-emitting element; and a second switch configured to control extraction of the drain current from the pixel and control the supply of the drain current to the light-emitting element.

公开(公告)号：US09577008B2

公开(公告)日：2017-02-21

申请号：US14136649

申请日：2013-12-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake ,  Tomoyuki Iwabuchi

IPC: H01L27/15 ,  H05B33/02 ,  G09G3/32 ,  H01L27/32

CPC classification number: H01L27/156 ,  G09G3/3233 ,  G09G3/3241 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2310/0256 ,  G09G2320/02 ,  G09G2320/0238 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3265

Abstract: A problem in that a light emitting element slightly emits light is solved by an off current of a thin film transistor connected in series to the light emitting element, thereby a display device which can perform a clear display by increasing contrast, and a driving method thereof are provided. When the thin film transistor connected in series to the light emitting element is turned off, a charge held in the capacitance of the light emitting element itself is discharged. Even when an off current is generated at the thin film transistor connected in series to the light emitting element, this off current charges this capacitance until the capacitance of the light emitting element itself holds a predetermined voltage again. Accordingly, the off current of the thin film transistor does not contribute to light emission. In this manner, a slight light emission of the light emitting element can be reduced.

Abstract translation: 通过与发光元件串联连接的薄膜晶体管的截止电流来解决发光元件稍微发光的问题，从而可以通过增加对比度进行清晰显示的显示装置及其驱动方法 被提供。 当与发光元件串联连接的薄膜晶体管截止时，放电保持在发光元件本身的电容中的电荷。 即使当在与发光元件串联连接的薄膜晶体管上产生截止电流时，该截止电流对该电容充电，直到发光元件本身的电容再次保持预定电压。 因此，薄膜晶体管的截止电流对发光没有贡献。 以这种方式，可以减少发光元件的轻微发光。

公开(公告)号：US09552767B2

公开(公告)日：2017-01-24

申请号：US14468902

申请日：2014-08-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake ,  Shunpei Yamazaki

IPC: G09G3/30 ,  G09G3/32

CPC classification number: G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/0233 ,  G09G2320/045

Abstract: A light-emitting device in which variation in luminance among pixels is suppressed. The light-emitting device includes a pixel; a first circuit configured to generate a signal containing information on a value of current extracted from the pixel; and a second circuit configured to correct an image signal in accordance with the signal. The pixel includes a light-emitting element; a transistor for controlling supply of the current to the light-emitting element in accordance with the image signal; a first switch configured to control connection between a gate and a drain of the transistor or between the gate of the transistor and a wiring; and a second switch configured to control extraction of the current from the pixel.

Abstract translation: 抑制像素间的亮度变动的发光装置。 发光装置包括像素; 第一电路，被配置为生成包含关于从所述像素提取的电流值的信息的信号; 以及第二电路，被配置为根据该信号校正图像信号。 像素包括发光元件; 晶体管，用于根据图像信号控制向发光元件的电流供应; 第一开关，被配置为控制晶体管的栅极和漏极之间或晶体管的栅极与布线之间的连接; 以及第二开关，被配置为控制从所述像素提取电流。

公开(公告)号：US09548039B2

公开(公告)日：2017-01-17

申请号：US14170671

申请日：2014-02-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryo Arasawa ,  Hiroyuki Miyake

IPC: G09G5/00 ,  G09G3/20 ,  G09G3/32

CPC classification number: G09G5/00 ,  G09G3/20 ,  G09G3/3258 ,  G09G2300/0857 ,  G09G2330/021 ,  G09G2330/028

Abstract: A display device is driven through no wire cable such as an FPC, and a display image is continuously held for a certain period of time by storing an image signal received from a wireless communication device so that the display image can be held even when the display device is out of communication range with the wireless communication device. A display device includes at least a pixel circuit having an SRAM (static random access memory) circuit, a circuit which controls the pixel circuit, an antenna circuit, a circuit which generates a demodulation signal, a circuit which rectifies a wireless signal, a circuit which generates first voltage, a charge circuit which stores second voltage, a charge control circuit, a voltage supply control circuit, and a circuit which controls the charge control circuit and the voltage supply control circuit.

Abstract translation: 显示装置不通过FPC等线缆驱动，并且通过存储从无线通信装置接收的图像信号，连续保持显示图像一定时间，使得即使在显示器 设备与无线通信设备不在通信范围内。 显示装置至少包括具有SRAM（静态随机存取存储器）电路的像素电路，控制像素电路的电路，天线电路，产生解调信号的电路，校正无线信号的电路，电路 其产生第一电压，存储第二电压的充电电路，充电控制电路，电压供给控制电路和控制充电控制电路和电压供给控制电路的电路。