公开(公告)号：US11901822B2

公开(公告)日：2024-02-13

申请号：US17612387

申请日：2020-05-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuto Yakubo ,  Hitoshi Kunitake ,  Takayuki Ikeda

IPC: H02M3/158 ,  H02M1/34 ,  H01L29/786

CPC classification number: H02M3/1588 ,  H01L29/7869 ,  H02M1/346

Abstract: A semiconductor device in which an increase in circuit area is inhibited is provided. The semiconductor device includes a first circuit layer and a second circuit layer over the first circuit layer; the first circuit layer includes a first transistor; the second circuit layer includes a second transistor; a gate of the second transistor is electrically connected to one of a source and a drain of the first transistor; a source and a drain of the second transistor are electrically connected to the other of the source and the drain of the first transistor; and a semiconductor layer of the second transistor contains a metal oxide.

公开(公告)号：US11843059B2

公开(公告)日：2023-12-12

申请号：US17712224

申请日：2022-04-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Hitoshi Kunitake

IPC: H01L29/00 ,  H01L27/00 ,  H01L29/786 ,  H10B12/00 ,  H01L27/10 ,  H10B41/27 ,  H10B43/30

CPC classification number: H01L29/7869 ,  H01L27/10 ,  H10B12/30 ,  H10B41/27 ,  H10B43/30

Abstract: A novel semiconductor device is provided. A component extending in a first direction, and a first conductor and a second conductor extending in a second direction are provided. The component includes a third conductor, a first insulator, a first semiconductor, and a second insulator. In a first intersection portion of the component and the first conductor, the first insulator, the first semiconductor, the second insulator, a second semiconductor, and a third insulator are provided concentrically. In a second intersection portion of the component and the second conductor, the first insulator, the first semiconductor, the second insulator, a fourth conductor, and a fourth insulator are provided concentrically around the third conductor.

公开(公告)号：US11776596B2

公开(公告)日：2023-10-03

申请号：US17772331

申请日：2020-08-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Takayuki Ikeda ,  Hitoshi Kunitake

IPC: G11C7/10

CPC classification number: G11C7/1096 ,  G11C7/109 ,  G11C7/1069

Abstract: A data device with a small circuit area and reduced power consumption is used. The data processing device includes a NAND memory portion and a controller. The memory portion includes a first string and a second string in different blocks. The first string includes a first memory cell, and the second string includes a second memory cell. On reception of first data and a signal including an instruction to write the first data, the controller writes the first data to the first memory cell. Then, the controller reads the first data from the first memory cell and writes the first data to the second memory cell.

公开(公告)号：US20220302312A1

公开(公告)日：2022-09-22

申请号：US17642346

申请日：2020-09-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hitoshi Kunitake ,  Yuichi YANAGISAWA ,  Shota MIZUKAMI ,  Kazuki TSUDA ,  Haruyuki BABA ,  Shunpei YAMAZAKI

IPC: H01L29/786

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a first conductor, a second conductor, a third oxide, a fourth oxide, and a second insulator over the second oxide; a third insulator over the first conductor, the second conductor, the third oxide, and the fourth oxide; a fourth insulator over the second insulator; and a third conductor over the fourth insulator. The second insulator is positioned between the first conductor and the second conductor. The third oxide is positioned between the first conductor and the second insulator. The fourth oxide is positioned between the second conductor and the second insulator. The thickness of the third oxide between the first conductor and the second insulator is greater than or equal to 3 nm and less than or equal to 8 nm. The thickness of the fourth oxide between the second conductor and the second insulator is greater than or equal to 3 nm and less than or equal to 8 nm.

公开(公告)号：US11430791B2

公开(公告)日：2022-08-30

申请号：US16959771

申请日：2019-01-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hitoshi Kunitake ,  Ryunosuke Honda ,  Tomoaki Atsumi

IPC: H01L27/108 ,  G11C11/405 ,  G11C11/4074 ,  H01L29/66

Abstract: A semiconductor device capable of obtaining the threshold voltage of a transistor is provided. The semiconductor device includes a first transistor, a first capacitor, a first output terminal, a first switch, and a second switch. A gate and a source of the first transistor are electrically connected to each other. A first terminal of the first capacitor is electrically connected to the source. A second terminal and the first output terminal of the first capacitor are electrically connected to a back gate of the first transistor. The first switch controls input of a first voltage to the back gate. A second voltage is input to a drain of the first transistor. The second switch controls input of a third voltage to the source.