公开(公告)号：US06611468B2

公开(公告)日：2003-08-26

申请号：US09931759

申请日：2001-08-20

申请人： Isao Nojiri ,  Atsushi Ohba ,  Yoshihide Kai

发明人： Isao Nojiri ,  Atsushi Ohba ,  Yoshihide Kai

IPC分类号： G11C702

CPC分类号： G11C11/5642 ,  G11C16/28

摘要： In a non-volatile semiconductor memory device, a constant current circuit is arranged in parallel with an NMOS diode converting a detected current on the array cell side to a voltage, and a constant current circuit is arranged in parallel with an NMOS diode converting a detected current on the reference cell side to a voltage. Constant current circuits supply an offset current. Thus, a difference between two input voltages of a differential amplifier increases.

公开(公告)号：US06588957B2

公开(公告)日：2003-07-08

申请号：US10223687

申请日：2002-08-20

申请人： Atsushi Ohba

发明人： Atsushi Ohba

IPC分类号： B43K2108

CPC分类号： A45D40/20 ,  A45D40/205 ,  A45D2040/208

摘要： A cartridge type stick-shaped cosmetic material feeding container 1 comprises a cartridge 2 and a container body 3, and the cartridge 2 rotatably connects a base cylinder 20 and a front cylinder 10 having an opening hole 11 through which a stick-shaped cosmetic material A advances and retreats. The stick-shaped cosmetic material A is retained by claws 32 at a front end of a core chuck member 30 inserted and an O-ring 4 is wound to an outer circumference of the base cylinder 20. Due to a feeding mechanism in the cartridge 2, the stick-shaped cosmetic material A retained by the core chuck member 30 advances and retreats along the front cylinder 10 with rotations of the front cylinder 10 and the base cylinder 20. The feeding mechanism of the cartridge 2 inserted in the container body 3 functions when the base cylinder 20 and the container body 3 synchronously rotate by frictional resistance of an inner circumference of the container body and the O-ring 4 wound to the base cylinder 20. Further, when a rotary load greater than frictional resistance of the O-ring 4 is applied at the feeding limit, the cartridge 2 and the container body 3 begin to make relative rotations so that no further overload greater than the rotary load is applied to the feeding mechanism.

摘要翻译： 盒型棒状化妆料供给容器1包括盒2和容器主体3，并且盒2可旋转地连接基座圆筒20和具有开口孔11的前筒10，棒状化妆品材料A 进步和退缩 棒状的化妆料A在插入的芯卡盘构件30的前端由爪32保持，O形环4缠绕在基座筒20的外周。由于盒2中的进给机构 由芯夹头构件30保持的棒状化妆料A通过前筒10和基筒20的旋转而沿着前筒10前进后退。插入容器主体3的筒体2的供给机构起作用 当基座圆筒20和容器主体3通过容器主体的内周的摩擦阻力和卷绕在基座圆筒20上的O形圈4同步旋转时。此外，当大于O形圈的摩擦阻力的旋转载荷 环4在进给极限处施加，盒2和容器主体3开始进行相对旋转，使得不超过大于旋转负载的过载被施加到进给机构。

公开(公告)号：US06515908B2

公开(公告)日：2003-02-04

申请号：US09845300

申请日：2001-05-01

申请人： Yoshikazu Miyawaki ,  Satoshi Shimizu ,  Atsushi Ohba ,  Mitsuhiro Tomoeda

发明人： Yoshikazu Miyawaki ,  Satoshi Shimizu ,  Atsushi Ohba ,  Mitsuhiro Tomoeda

IPC分类号： G11C1606

CPC分类号： G11C16/3409 ,  G11C16/16 ,  G11C16/3404 ,  G11C16/3445

摘要： Erasing is performed two times for narrowing a distribution width of threshold voltages of memory cells, and reducing the number of memory transistors to be subjected to over-erase verify. The erase verify voltage for the first erasing is set more strictly than the erase verify voltage for the second erasing. The erase pulses for the second erasing can be reduced in number, and the erasing time can be further reduced.

公开(公告)号：US06433583B1

公开(公告)日：2002-08-13

申请号：US09585916

申请日：2000-06-02

申请人： Rino Micheloni ,  Giovanni Campardo ,  Atsushi Ohba ,  Marcello Carrera

发明人： Rino Micheloni ,  Giovanni Campardo ,  Atsushi Ohba ,  Marcello Carrera

IPC分类号： H03K190175

CPC分类号： H03K19/018521 ,  G11C5/145 ,  G11C8/10 ,  G11C11/5621 ,  G11C16/08 ,  H03K19/0013 ,  H03K19/01721

摘要： The switch circuit receives a first supply voltage and a second supply voltage different from each other; a control input receiving a control signal that may be switched between the first supply voltage and ground; a driving inverter stage supplied by the second supply voltage and defining the output of the circuit; a feedback inverter stage supplied by the second supply voltage and including a top transistor and a bottom transistor defining an intermediate node and having respective control terminals. The control terminal of the top transistor is connected to the output node, the control terminal of the bottom transistor is connected to the control input, and the intermediate node is connected to the input of the driving inverter stage. An activation element helps switching of the intermediate node from the second supply voltage to ground; current limiting transistors are arranged in the inverter stages to limit the current flowing during switching and to reduce the consumption of the circuit.

摘要翻译： 开关电路接收彼此不同的第一电源电压和第二电源电压; 接收可以在第一电源电压和地之间切换的控制信号的控制输入; 由第二电源电压提供的驱动逆变器级，并定义电路的输出; 由第二电源电压提供的反馈反相器级，并且包括限定中间节点并具有相应控制端的顶部晶体管和底部晶体管。 顶部晶体管的控制端子连接到输出节点，底部晶体管的控制端子连接到控制输入，中间节点连接到驱动逆变器级的输入端。 激活元件有助于将中间节点从第二电源电压切换到地; 限流晶体管布置在反相器级中以限制在开关期间流动的电流并且减少电路的消耗。

公开(公告)号：US5999475A

公开(公告)日：1999-12-07

申请号：US34996

申请日：1998-03-05

申请人： Tomoshi Futatsuya ,  Atsushi Ohba

发明人： Tomoshi Futatsuya ,  Atsushi Ohba

IPC分类号： G11C5/14 ,  G11C16/12 ,  G11C7/00

CPC分类号： G11C16/12 ,  G11C5/145

摘要： An internal potential generation circuit operates with the potential levels of an output node N.sub.H1 of a first boosting circuit and an output node N.sub.H2 of a second boosting circuit maintained in common in response to a high voltage switch circuit attaining a conductive state at the initial stage of the operation of the internal potential generation circuit. After the output potential level of the second boosting circuit arrives at a predetermined potential level, the high voltage switch circuit is cut off, whereby the first and second boosting circuits drive independently the potential level of corresponding output nodes.

摘要翻译： 内部电位产生电路与第一升压电路的输出节点NH1的电位电平和第二升压电路的输出节点NH2的电位相对应地响应于在初始阶段达到导通状态的高电压开关电路而保持共同 内部电位产生电路的运行。 在第二升压电路的输出电位达到预定电位后，高压开关电路被切断，由此第一和第二升压电路独立驱动相应的输出节点的电位。

公开(公告)号：US5274597A

公开(公告)日：1993-12-28

申请号：US767315

申请日：1991-09-30

申请人： Shigeki Ohbayashi ,  Atsushi Ohba ,  Toru Shiomi

发明人： Shigeki Ohbayashi ,  Atsushi Ohba ,  Toru Shiomi

IPC分类号： G11C11/41 ,  G11C11/418 ,  H01L21/8244 ,  H01L27/11 ,  G11C7/00

CPC分类号： G11C11/418

摘要： A divided word line driving circuit applicable to a static random access memory (SRAM) employing a divided word line method is disclosed. When a divided word line is activated, the potential at the input of an inverter for driving the word line is brought to a low level. When the input signals S1 and S2 are both at a low level, the divided word line is brought to an inactive state. The input of the inverter is charged by a transistor 101 in addition to a transistor 102 which is always on. In other words, transistor 101 contributes to accelerating charging of the input of the inverter. Consequently, the potential of the divided word line is made to rise at high speed, so that access operation at high speed can be achieved. The circuit is implemented with a small number of transistors, so that it becomes also possible to enhance the degree of integration of a SRAM.

摘要翻译： 公开了一种适用于采用分割字线方法的静态随机存取存储器（SRAM）的分割字线驱动电路。 当分割字线被激活时，用于驱动字线的逆变器的输入端的电位变为低电平。 当输入信号S1和S2都处于低电平时，分割字线处于非活动状态。 除了始终导通的晶体管102之外，反相器的输入由晶体管101充电。 换句话说，晶体管101有助于加速逆变器的输入的充电。 因此，使分割字线的电位高速上升，从而可以实现高速的存取操作。 该电路由少量的晶体管实现，使得还可以提高SRAM的集成度。

公开(公告)号：US5138201A

公开(公告)日：1992-08-11

申请号：US542225

申请日：1990-06-22

申请人： Shigeki Ohbayashi ,  Atsushi Ohba

发明人： Shigeki Ohbayashi ,  Atsushi Ohba

IPC分类号： G11C11/419 ,  G11C7/06 ,  G11C11/416

CPC分类号： G11C7/062

摘要： Disclosed is a sense amplifier employing an emitter coupled logic (ECL) circuit. A constant voltage generating circuit independent of a change or a fluctuation of a power supply voltage level is provided. Two current-mirror circuits supply constant currents to the ECL circuit based on a generated constant voltage. Since a constant current independent of the change of power supply voltage level is supplied to the ECL circuit, the ECL circuit reliably converts a small potential difference generated between I/O lines into a current signal. Accordingly, no erroneous reading operation is performed.

摘要翻译： 公开了采用发射极耦合逻辑（ECL）电路的读出放大器。 提供了与电源电压电平的变化或波动无关的恒压发生电路。 两个电流镜电路基于产生的恒定电压向ECL电路提供恒定电流。 由于独立于电源电压电平变化的恒定电流被提供给ECL电路，因此ECL电路将I / O线之间产生的小电位差可靠地转换为电流信号。 因此，不执行错误的读取操作。

公开(公告)号：US4993857A

公开(公告)日：1991-02-19

申请号：US496843

申请日：1990-03-22

申请人： Atsushi Ohba

发明人： Atsushi Ohba

IPC分类号： A45D40/04

CPC分类号： A45D40/04

摘要： A cosmetic container for containing a bar-shaped cosmetic material, wherein a helical body is provided having on the top hereof a portion to which the bar-shaped cosmetic material is attached, said helical body being contained in a guide cylinder so that it does not rotate but only freely slides in the axial direction, and wherein a rotary rod having sliders slidably engaging with the helical groove of said helical body is coaxially placed within said helical body and provided so that it does not axially travel relative to said guide cylinder, whereby a feed motion is applied by rotation of the rotary rod on the helical body through the sliders to upwardly and downwardly move the cosmetic material along the inner periphery of the guide cylinder.

摘要翻译： 一种用于容纳棒状化妆料的化妆品容器，其中设置有螺旋体，所述螺旋体的顶部具有连接有所述棒状化妆料的部分，所述螺旋体容纳在导向筒中，使得其不 旋转但仅沿轴向自由滑动，并且其中具有与所述螺旋体的螺旋槽可滑动地接合的滑动件的旋转杆同轴地放置在所述螺旋体内并且被设置为使得其相对于所述导向筒不轴向移动，由此 通过滑块将旋转杆旋转在螺旋体上进行进给运动，以沿着引导筒的内周向上和向下移动化妆品材料。

公开(公告)号：US07611167B2

公开(公告)日：2009-11-03

申请号：US11243646

申请日：2005-10-05

申请人： Kunio Miyauchi ,  Atsushi Ohba ,  Hironao Saito

发明人： Kunio Miyauchi ,  Atsushi Ohba ,  Hironao Saito

IPC分类号： B60P3/22 ,  B65D88/22

CPC分类号： B60P3/2235 ,  B60K15/077 ,  B60K2015/0344 ,  B60K2015/0638 ,  B60K2015/0777

摘要： A fuel tank is provided which suppresses wave motion on the liquid surface of fuel which occurs when a vehicle accelerates or decelerates. A front wall and/or a rear wall of the fuel tank includes a plurality of steps formed integrally therewith. The liquid surface of the fuel striking the steps is dispersed, and wave motion on the liquid surface is thereby suppressed. Since the steps are formed in the front wall and/or the rear wall of the fuel tank, the volume of the tank is not reduced.

摘要翻译： 提供一种燃料箱，其抑制当车辆加速或减速时发生的燃料液面上的波浪运动。 燃料箱的前壁和/或后壁包括与其一体形成的多个台阶。 引起台阶的燃料的液面被分散，由此抑制液面上的波动。 由于在燃料箱的前壁和/或后壁上形成台阶，因此不会减小油箱的体积。

公开(公告)号：US07000846B2

公开(公告)日：2006-02-21

申请号：US10655580

申请日：2003-09-05

申请人： Norihiko Hakushi ,  Atsushi Ohba ,  Yoshimasa Yoshimura ,  Takeshi Nakayama

发明人： Norihiko Hakushi ,  Atsushi Ohba ,  Yoshimasa Yoshimura ,  Takeshi Nakayama

IPC分类号： G06K19/06

CPC分类号： G11C7/22 ,  G11C7/1006 ,  G11C11/406 ,  G11C11/40615 ,  G11C11/4096

摘要： A semiconductor memory device including a flash memory and a RAM incorporating a pseudo-SRAM contained in an MCP, has an internal transfer control signal for controlling internal data transfer between the flash memory and pseudo-SRAM, and an external transfer control signal for controlling data transfer between an external CPU and pseudo-SRAM, as control signals for the pseudo-SRAM. A flash controller in the RAM controls the internal transfer control signal so as to suspend the internal data transfer between the flash memory and pseudo-SRAM when the external CPU requests access to the pseudo-SRAM during the internal data transfer.

摘要翻译： 包括闪速存储器和包含在MCP中的伪SRAM的RAM的半导体存储器件具有用于控制闪速存储器和伪SRAM之间的内部数据传输的内部传送控制信号和用于控制数据的外部传送控制信号 在外部CPU和伪SRAM之间传输，作为伪SRAM的控制信号。 内部闪存控制器控制内部传输控制信号，以便在内部数据传输期间外部CPU请求访问伪SRAM时，暂停闪速存储器和伪SRAM之间的内部数据传输。