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31.发明授权Magnetic random access memory, write method therefor, and magnetoresistance effect element 有权磁性随机存取存储器，其写入方法和磁阻效应元件公开(公告)号：US08194436B2
公开(公告)日：2012-06-05
申请号：US12678538
申请日：2008-07-07
CPC分类号： B82Y10/00 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L29/82 , H01L43/08
摘要： A magnetic random access memory includes: a first ferromagnetic layer; an insulating layer provided adjacent to the first ferromagnetic layer; and a first magnetization pinned layer provided adjacent to the insulating layer on a side opposite to the first ferromagnetic layer. The first ferromagnetic layer includes a magnetization free region, a first magnetization pinned region, and a second magnetization pinned region. The magnetization free region has reversible magnetization, and overlaps with the second ferromagnetic layer. The first magnetization pinned region has first pinned magnetization, and is connected to a part of the magnetization free region. The second magnetization pinned region has second pinned magnetization, and is connected to a part of the magnetization free region. The first ferromagnetic layer has magnetic anisotropy in a direction perpendicular to a film surface. The first pinned magnetization and the second pinned magnetization are pinned antiparallel to each other in the direction perpendicular to the film surface.
摘要翻译： 磁性随机存取存储器包括：第一铁磁层; 与所述第一铁磁层相邻设置的绝缘层; 以及在与第一铁磁层相反的一侧与绝缘层相邻设置的第一磁化固定层。 第一铁磁层包括无磁化区域，第一磁化固定区域和第二磁化固定区域。 无磁化区域具有可逆磁化强度，并与第二铁磁层重叠。 第一磁化钉扎区域具有第一钉扎磁化，并且连接到无磁化区域的一部分。 第二磁化钉扎区域具有第二钉扎磁化，并且连接到无磁化区域的一部分。 第一铁磁层在垂直于膜表面的方向上具有磁各向异性。 第一钉扎磁化和第二钉扎磁化在垂直于膜表面的方向上彼此反平行地被钉住。
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公开(公告)号：US08154913B2
公开(公告)日：2012-04-10
申请号：US12739855
申请日：2008-08-21
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A magnetoresistance effect element comprising: a first magnetization fixed layer whose magnetization direction is fixed; a first magnetization free layer whose magnetization direction is variable; a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer; a second magnetization fixed layer whose magnetization direction is fixed; a second magnetization free layer whose magnetization direction is variable; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer. The first magnetization fixed layer and the first magnetization free layer have perpendicular magnetic anisotropy, while the second magnetization fixed layer and the second magnetization free layer have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other. In a plane parallel to each layer, center of the second magnetization free layer is displaced from center of the first magnetization free layer.
摘要翻译： 一种磁阻效应元件，包括：其磁化方向固定的第一磁化固定层; 磁化方向可变的第一磁化自由层; 夹在第一磁化固定层和第一磁化自由层之间的第一非磁性层; 磁化方向固定的第二磁化固定层; 磁化方向可变的第二磁化自由层; 以及夹在第二磁化固定层和第二磁化自由层之间的第二非磁性层。 第一磁化固定层和第一磁化自由层具有垂直的磁各向异性，而第二磁化固定层和第二磁化自由层具有面内磁各向异性。 第一磁化自由层和第二磁化自由层彼此磁耦合。 在与每个层平行的平面中，第二磁化自由层的中心从第一磁化自由层的中心位移。
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公开(公告)号：US08120127B2
公开(公告)日：2012-02-21
申请号：US12670462
申请日：2008-07-07
IPC分类号： H01L29/78
CPC分类号： G11C11/14 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A domain wall motion type MRAM 100 has: a magnetic recording layer 10 that is a ferromagnetic layer; and a magnetic coupling layer 20 that is a ferromagnetic layer whose magnetization direction is fixed. The magnetic recording layer 10 has: a first region 10-1; a second region 10-2; and a magnetization switching region 10-3 connecting between the first region 10-1 and the second region 10-2. The first region 10-1 is magnetically coupled to the magnetic coupling layer 20 and its magnetization direction is fixed in a first direction by the magnetic coupling layer 20. The second region 10-2 is not magnetically coupled to the magnetic coupling layer 20 and its magnetization direction is a second direction that is opposite to the first direction.
摘要翻译： 畴壁运动型MRAM 100具有：作为铁磁层的磁记录层10; 以及作为其磁化方向固定的铁磁性层的磁耦合层20。 磁记录层10具有：第一区域10-1; 第二区域10-2; 以及连接在第一区域10-1和第二区域10-2之间的磁化切换区域10-3。 第一区域10-1磁耦合到磁耦合层20，并且其磁化方向通过磁耦合层20在第一方向固定。第二区域10-2不与磁耦合层20磁耦合， 磁化方向是与第一方向相反的第二方向。
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公开(公告)号：US20100254183A1
公开(公告)日：2010-10-07
申请号：US12739855
申请日：2008-08-21
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A magnetoresistance effect element has: a first magnetization fixed layer whose magnetization direction is fixed; a first magnetization free layer whose magnetization direction is variable; a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer; a second magnetization fixed layer whose magnetization direction is fixed; a second magnetization free layer whose magnetization direction is variable; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer. The first magnetization fixed layer and the first magnetization free layer have perpendicular magnetic anisotropy, while the second magnetization fixed layer and the second magnetization free layer have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other. In a plane parallel to each layer, center of the second magnetization free layer is displaced from center of the first magnetization free layer.
摘要翻译： 磁阻效应元件具有：其磁化方向固定的第一磁化固定层; 磁化方向可变的第一磁化自由层; 夹在第一磁化固定层和第一磁化自由层之间的第一非磁性层; 磁化方向固定的第二磁化固定层; 磁化方向可变的第二磁化自由层; 以及夹在第二磁化固定层和第二磁化自由层之间的第二非磁性层。 第一磁化固定层和第一磁化自由层具有垂直的磁各向异性，而第二磁化固定层和第二磁化自由层具有面内磁各向异性。 第一磁化自由层和第二磁化自由层彼此磁耦合。 在与每个层平行的平面中，第二磁化自由层的中心从第一磁化自由层的中心位移。
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公开(公告)号：US20100193889A1
公开(公告)日：2010-08-05
申请号：US12670462
申请日：2008-07-07
IPC分类号： H01L29/82
CPC分类号： G11C11/14 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A domain wall motion type MRAM 100 has: a magnetic recording layer 10 that is a ferromagnetic layer; and a magnetic coupling layer 20 that is a ferromagnetic layer whose magnetization direction is fixed. The magnetic recording layer 10 has: a first region 10-1; a second region 10-2; and a magnetization switching region 10-3 connecting between the first region 10-1 and the second region 10-2. The first region 10-1 is magnetically coupled to the magnetic coupling layer 20 and its magnetization direction is fixed in a first direction by the magnetic coupling layer 20. The second region 10-2 is not magnetically coupled to the magnetic coupling layer 20 and its magnetization direction is a second direction that is opposite to the first direction.
摘要翻译： 畴壁运动型MRAM 100具有：作为铁磁层的磁记录层10; 以及作为其磁化方向固定的铁磁性层的磁耦合层20。 磁记录层10具有：第一区域10-1; 第二区域10-2; 以及连接在第一区域10-1和第二区域10-2之间的磁化切换区域10-3。 第一区域10-1磁耦合到磁耦合层20，并且其磁化方向通过磁耦合层20在第一方向固定。第二区域10-2不与磁耦合层20磁耦合， 磁化方向是与第一方向相反的第二方向。
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公开(公告)号：US08791534B2
公开(公告)日：2014-07-29
申请号：US13806828
申请日：2011-06-16
IPC分类号： H01L43/00
CPC分类号： H01L43/02 , G11C11/14 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C19/0808 , H01L27/228 , H01L43/08
摘要： In a perpendicular magnetization domain wall motion MRAM in which the magnetizations of both ends of a magnetization free layer are pinned by magnetization pinned layers, the increase of a write current due to leakage magnetic field from the magnetization pinned layer is prevented. A first displacement is present between a first boundary line and a first vertical line, where a curve portion, which crosses a first magnetization free layer, of an outer circumferential line of a first magnetization pinned layer is the first boundary line, a segment which links a center of a magnetization free region and a center of a first magnetization pinned region is a first segment, and a segment, which is a vertical line of the first segment, and which comes in contact with the first boundary line is the first vertical line.
摘要翻译： 在其中磁化自由层的两端的磁化被磁化固定层固定的垂直磁化畴壁运动MRAM中，防止了由于来自磁化固定层的泄漏磁场引起的写入电流的增加。 在第一边界线和第一垂直线之间存在第一位移，其中穿过第一磁化固定层的外周线的第一磁化自由层的曲线部分是第一边界线，链段 无磁化区域的中心和第一磁化固定区域的中心是第一段，作为第一段的垂直线并与第一边界线接触的段是第一垂直线 。
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公开(公告)号：US08040724B2
公开(公告)日：2011-10-18
申请号：US12671012
申请日：2008-07-07
IPC分类号： G11C11/15
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A magnetic random access memory includes: a magnetic recording layer including a ferromagnetic layer and having perpendicular magnetic anisotropy; and a magnetic reading layer provided on the magnetic recording layer and used for reading information. The magnetic recording layer includes: a magnetization switching area having reversible magnetization; a first magnetization pinned area connected to a first boundary of the magnetization switching area and having magnetization whose direction is pinned in a first direction; and a second magnetization pinned area connected to a second boundary of the magnetization switching area and having magnetization whose direction is pinned in a second direction. The magnetic reading layer includes: a magnetic sensing layer whose direction of magnetization changes based on a direction of the magnetization of the magnetization switching area; a nonmagnetic barrier layer provided on the magnetic sensing layer; and a pinned layer provided on the nonmagnetic barrier layer.
摘要翻译： 磁性随机存取存储器包括：包含铁磁层并具有垂直磁各向异性的磁记录层; 以及设置在磁记录层上并用于读取信息的磁读取层。 磁记录层包括：具有可逆磁化的磁化切换区域; 第一磁化固定区域，连接到磁化开关区域的第一边界并且具有方向被固定在第一方向上的磁化; 以及连接到所述磁化开关区域的第二边界并具有其方向被固定在第二方向上的磁化的第二磁化固定区域。 磁读取层包括：磁化方向的磁感应层根据磁化转换区域的磁化方向而变化; 设置在所述磁敏感层上的非磁性阻挡层; 以及设置在非磁性阻挡层上的钉扎层。
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公开(公告)号：US20100193890A1
公开(公告)日：2010-08-05
申请号：US12671012
申请日：2008-07-07
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A magnetic random access memory includes: a magnetic recording layer including a ferromagnetic layer and having perpendicular magnetic anisotropy; and a magnetic reading layer provided on the magnetic recording layer and used for reading information. The magnetic recording layer includes: a magnetization switching area having reversible magnetization; a first magnetization pinned area connected to a first boundary of the magnetization switching area and having magnetization whose direction is pinned in a first direction; and a second magnetization pinned area connected to a second boundary of the magnetization switching area and having magnetization whose direction is pinned in a second direction. The magnetic reading layer includes: a magnetic sensing layer whose direction of magnetization changes based on a direction of the magnetization of the magnetization switching area; a nonmagnetic barrier layer provided on the magnetic sensing layer; and a pinned layer provided on the nonmagnetic barrier layer.
摘要翻译： 磁性随机存取存储器包括：包含铁磁层并具有垂直磁各向异性的磁记录层; 以及设置在磁记录层上并用于读取信息的磁读取层。 磁记录层包括：具有可逆磁化的磁化切换区域; 第一磁化固定区域，连接到磁化开关区域的第一边界并且具有方向被固定在第一方向上的磁化; 以及连接到所述磁化开关区域的第二边界并具有其方向被固定在第二方向上的磁化的第二磁化固定区域。 磁读取层包括：磁化方向的磁感应层根据磁化转换区域的磁化方向而变化; 设置在所述磁敏感层上的非磁性阻挡层; 以及设置在非磁性阻挡层上的钉扎层。
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公开(公告)号：US20110292718A1
公开(公告)日：2011-12-01
申请号：US13144480
申请日：2010-01-21
申请人： Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Noburu Sakimura , Ryusuke Nebashi
发明人： Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Noburu Sakimura , Ryusuke Nebashi
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/5607 , H01L43/08 , H03K19/1776 , H03K19/1778 , H03K19/18 , H03K19/20
摘要： A non-volatile logic circuit includes an input section, a control section and an output section. The input section has perpendicular magnetic anisotropy and has a ferromagnetic layer whose magnetization state is changeable. The control section includes a ferromagnetic layer. The output section is provided in a neighborhood of the input section and the control section and includes a magnetic tunnel junction element whose magnetization state is changeable. The magnetization state of the input section is changed based on the magnetization state. A magnetization state of the magnetic tunnel junction element of the output section which state is changed based on the magnetization state of the ferromagnetic material of the control section and the magnetization state of the ferromagnetic material of the input section.
摘要翻译： 非易失性逻辑电路包括输入部分，控制部分和输出部分。 输入部具有垂直的磁各向异性，并具有磁化状态可变的铁磁层。 控制部分包括铁磁层。 输出部分设置在输入部分和控制部分的附近，并且包括磁化状态可变的磁性隧道结元件。 基于磁化状态改变输入部的磁化状态。 输出部分的磁性隧道结元件的磁化状态基于控制部分的铁磁材料的磁化状态和输入部分的铁磁材料的磁化状态而改变。
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公开(公告)号：US20110199818A1
公开(公告)日：2011-08-18
申请号：US13120626
申请日：2009-10-29
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： An initialization method is provided for a magnetic memory element including: a data recording layer having perpendicular magnetic anisotropy which includes: a first magnetization fixed region, a second magnetization fixed region, and a magnetization free region coupled to the first magnetization fixed region and the second magnetization fixed region, the data recording layer being structure so that the coercive force of the first magnetization fixed region being different from that of the second magnetization fixed region. The initialization method includes steps of: directing the magnetizations of the first magnetization fixed region, the second magnetization fixed region and the magnetization free region in the same direction; and applying a magnetic field having both components perpendicular to and parallel to the magnetic anisotropy of the data recording layer to the data recording layer.
摘要翻译： 提供了一种用于磁存储元件的初始化方法，包括：具有垂直磁各向异性的数据记录层，其包括：第一磁化固定区域，第二磁化固定区域和耦合到第一磁化固定区域的无磁化区域， 磁化固定区域，数据记录层的结构使得第一磁化固定区域的矫顽力与第二磁化固定区域的矫顽力不同。 该初始化方法包括以下步骤：将第一磁化固定区域，第二磁化固定区域和无磁化区域的磁化指向相同方向; 以及将具有与数据记录层的磁各向异性垂直并平行的两个分量的磁场施加到数据记录层。
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