公开(公告)号：US11502428B2

公开(公告)日：2022-11-15

申请号：US17330237

申请日：2021-05-25

Applicant: Soitec

Inventor： Eric Desbonnets ,  Bernard Aspar

IPC: H01Q23/00 ,  H01L21/762 ,  H01L29/66 ,  H01L29/786 ,  H01Q1/22

Abstract: A structure for radiofrequency applications includes a high-resistivity support substrate having a front face defining a main plane, a charge-trapping layer disposed on the front face of the support substrate, a first dielectric layer disposed on the charge-trapping layer, an active layer disposed on the first dielectric layer, at least one buried electrode disposed above or in the charge-trapping layer. The buried electrode comprises a conductive layer and a second dielectric layer.

公开(公告)号：US20220277988A1

公开(公告)日：2022-09-01

申请号：US17663898

申请日：2022-05-18

Applicant: Soitec

Inventor： Eric Desbonnets ,  Ionut Radu ,  Oleg Kononchuk ,  Jean-Pierre Raskin

IPC: H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L29/06

Abstract: Substrates for microelectronic radiofrequency devices may include a substrate comprising a semiconductor material. Trenches may be located in an upper surface of the substrate, at least some of the trenches including a filler material located within the respective trench. A resistivity of the filler material may be 10 kOhms·cm or greater. A piezoelectric material may be located on or above the upper surface of the substrate. Methods of making substrates for microelectronic radiofrequency devices may involve forming trenches in an upper surface of a substrate including a semiconductor material. A filler material may be placed in at least some of the trenches, and a piezoelectric material may be placed on or above the upper surface of the substrate.

公开(公告)号：US20210121103A1

公开(公告)日：2021-04-29

申请号：US17141065

申请日：2021-01-04

Applicant: Soitec

Inventor： Marcel Broekaart ,  Thierry Barge ,  Pascal Guenard ,  Ionut Radu ,  Eric Desbonnets ,  Oleg Kononchuk

IPC: A61B5/1459 ,  A61B5/00 ,  A61B5/145

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

公开(公告)号：US10819282B2

公开(公告)日：2020-10-27

申请号：US16614732

申请日：2018-05-23

Applicant: Soitec

Inventor： Marcel Broekaart ,  Frederic Allibert ,  Eric Desbonnets ,  Jean-Pierre Raskin ,  Martin Rack

IPC: H01L23/66 ,  H03C7/00

Abstract: A method for minimizing harmonic distortion and/or intermodulation distortion of a radiofrequency signal propagating in a radiofrequency circuit formed on a semiconductor substrate coated with an electrically insulating layer, wherein a curve representing the distortion as a function of a power of the input or output signal exhibits a trough around a given power (PDip), the method comprises applying, between the radiofrequency circuit and the semiconductor substrate, an electrical potential difference (VGB) chosen so as to move the trough toward a given operating power of the radiofrequency circuit.

公开(公告)号：US10276492B2

公开(公告)日：2019-04-30

申请号：US15405867

申请日：2017-01-13

Applicant: Soitec

Inventor： Ionut Radu ,  Eric Desbonnets

IPC: H01L23/48 ,  H01L23/522 ,  H01L21/768 ,  H01L23/528 ,  H01L23/66 ,  H01L21/762

Abstract: Methods of forming a semiconductor structure include forming a device layer on an initial substrate, attaching a first surface of the device layer to a temporary substrate and forming a high resistivity layer on a second surface of the device layer by removing a portion of the initial substrate. Methods further include attaching a final substrate to the high resistivity layer and removing the temporary substrate. Semiconductor structures are fabricated by such methods that include a final substrate, a high resistivity layer disposed over the final substrate and a device layer disposed over the high resistivity layer.

公开(公告)号：US20160065162A1

公开(公告)日：2016-03-03

申请号：US14782548

申请日：2014-03-21

Applicant: SOITEC

Inventor： Christophe Zinke ,  Eric Desbonnets

IPC: H03H3/08 ,  H03H9/25

CPC classification number: H03H3/08 ,  H03H9/25

Abstract: This disclosure relates to a method of fabrication of a surface acoustic wave device comprising the step (a) of providing a piezoelectric structure, the step (b) of providing a dielectric structure, wherein the step (b) comprises a step (b1) of metalizing the dielectric structure, and the method further comprising the step (c) of bonding the metalized dielectric structure to the piezoelectric structure.

Abstract translation: 本公开涉及一种制造声表面波器件的方法，包括提供压电结构的步骤（a），提供电介质结构的步骤（b），其中步骤（b）包括步骤（b1） 金属化电介质结构，并且该方法还包括将金属化电介质结构接合到压电结构的步骤（c）。