PATTERN FORMING METHOD AND ACTINIC-RAY- OR RADIATION-SENSTIVE RESIN COMPOSITION
    33.
    发明申请
    PATTERN FORMING METHOD AND ACTINIC-RAY- OR RADIATION-SENSTIVE RESIN COMPOSITION 有权
    图案形成方法和丙烯酰胺或辐射敏感性树脂组合物

    公开(公告)号:US20130040096A1

    公开(公告)日:2013-02-14

    申请号:US13642751

    申请日:2011-05-20

    IPC分类号: G03F7/039 H01L21/027 G03F7/20

    摘要: Provided is a method of forming a pattern and an actinic-ray- or radiation-sensitive resin composition that excels in the limiting resolving power, roughness characteristics, exposure latitude (EL) and bridge defect performance. The method of forming a pattern includes (1) forming an actinic-ray- or radiation-sensitive resin composition into a film, (2) exposing the film to light, and (3) developing the exposed film with a developer containing an organic solvent. The actinic-ray- or radiation-sensitive resin composition contains (A) a resin containing a repeating unit with a structural moiety that is configured to decompose when exposed to actinic rays or radiation to thereby generate an acid, and (B) a solvent.

    摘要翻译: 提供了形成极限分辨能力,粗糙度特性,曝光宽容度(EL)和桥梁缺陷性能优异的图案和光化射线或辐射敏感性树脂组合物的方法。 形成图案的方法包括(1)将光化学射线或辐射敏感性树脂组合物形成膜,(2)将膜曝光,和(3)用含有机溶剂的显影剂显影曝光膜 。 所述光化学射线或辐射敏感性树脂组合物含有(A)含有具有结构部分的重复单元的树脂,所述结构部分被配置为当暴露于光化射线或辐射时分解从而产生酸,和(B)溶剂。

    PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM
    34.
    发明申请
    PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM 有权
    图案形成方法,图案,化学放大电阻组合物和电阻膜

    公开(公告)号:US20120288691A1

    公开(公告)日:2012-11-15

    申请号:US13522147

    申请日:2011-01-13

    摘要: A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains (A) a resin containing a repeating unit having two or more hydroxyl groups, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent and (D) a solvent; a pattern formed by the pattern forming method; a chemical amplification resist composition used in the pattern forming method; and a resist film formed using the chemical amplification resist composition.

    摘要翻译: 一种图案形成方法,包括(i)从化学放大抗蚀剂组合物形成膜的步骤(ii)暴露所述膜的步骤,和(iii)通过使用含有机溶剂的显影剂显影所述曝光的膜的步骤, 其中,所述化学增幅抗蚀剂组合物含有(A)含有具有2个以上羟基的重复单元的树脂,(B)能够在光化射线或辐射照射时能够产生酸的化合物,(C)交联剂和( D)溶剂; 由图案形成方法形成的图案; 在图案形成方法中使用的化学放大抗蚀剂组合物; 以及使用该化学放大抗蚀剂组合物形成的抗蚀剂膜。

    PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM
    35.
    发明申请
    PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM 有权
    图案形成方法,化学放大电阻组合物和电阻膜

    公开(公告)号:US20120148957A1

    公开(公告)日:2012-06-14

    申请号:US13390847

    申请日:2010-10-05

    IPC分类号: G03F7/20 G03F7/075 G03F7/004

    摘要: A pattern forming method includes: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains: (A) a resin substantially insoluble in alkali; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a crosslinking agent; and (D) a solvent, a negative chemical amplification resist composition used in the method, and a resist film formed from the negative chemical amplification resist composition.

    摘要翻译: 图案形成方法包括:(i)从化学放大抗蚀剂组合物形成膜; (ii)使膜曝光,形成曝光膜; 和(iii)通过使用含有机溶剂的显影剂显影所述曝光的膜,其中所述化学增幅抗蚀剂组合物含有:(A)基本上不溶于碱的树脂; (B)能够在用光化射线或辐射照射时能产生酸的化合物; (C)交联剂; 和(D)本方法中使用的溶剂,负性化学增幅抗蚀剂组合物和由负极化学增幅抗蚀剂组合物形成的抗蚀剂膜。

    RESIST COMPOSITION AND PATTERN-FORMING METHOD USING SAME
    36.
    发明申请
    RESIST COMPOSITION AND PATTERN-FORMING METHOD USING SAME 有权
    使用相同的抗蚀组合物和图案形成方法

    公开(公告)号:US20080241737A1

    公开(公告)日:2008-10-02

    申请号:US12053927

    申请日:2008-03-24

    IPC分类号: G03F7/004 G03F7/20

    摘要: A resist composition comprises (A) at least two kinds of resins each of which decomposes by the action of an acid to undergo an increase in its solubility for an alkali developer, wherein at least one kind of the resins (A) is a resin synthesized by living radical polymerization using a chain transfer agent represented by formula (I): wherein: A represents an organic group not containing hetero atoms; and Y represents an organic group capable of releasing a radical.

    摘要翻译: 抗蚀剂组合物包含(A)至少两种树脂,每种树脂通过酸的作用分解,以增加其对碱性显影剂的溶解度,其中至少一种树脂(A)是合成的树脂 通过使用由式(I)表示的链转移剂的活性自由基聚合:其中:A表示不含杂原子的有机基团; Y表示能释放自由基的有机基团。