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公开(公告)号：US20120321855A1
公开(公告)日：2012-12-20
申请号：US13580921
申请日：2011-02-24
申请人： Kaoru Iwato , Shohei Kataoka , Shinji Tarutani , Sou Kamimura , Keita Kato , Yuichiro Enomoto , Kazuyoshi Mizutani , Toru Tsuchihashi , Kana Fujii
发明人： Kaoru Iwato , Shohei Kataoka , Shinji Tarutani , Sou Kamimura , Keita Kato , Yuichiro Enomoto , Kazuyoshi Mizutani , Toru Tsuchihashi , Kana Fujii
IPC分类号： G03F7/027 , B32B3/30 , G03F7/004 , G03F7/20 , C08F224/00
CPC分类号： G03F7/30 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/0757 , G03F7/0758 , G03F7/11 , G03F7/2041 , G03F7/325 , G03F7/38 , Y10T428/24479
摘要： Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.
摘要翻译： 提供了形成图案的方法，确保优异的灵敏度，限制分辨率，粗糙度特性，曝光宽容度（EL），对曝光后烘烤（PEB）温度和聚焦宽度（焦深DOF）的依赖性以及抗蚀剂组合物 用于该方法。 该方法包括（A）由抗蚀剂组合物形成膜，所述抗蚀剂组合物含有含有重复单元的树脂，所述树脂含有当被酸作用时分解的基团，从而产生醇羟基，所述树脂当被酸作用时降低 其在含有有机溶剂的显影剂中的溶解度，（B）将膜曝光，和（C）使用含有有机溶剂的显影剂显影曝光膜。
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2.发明授权Pattern forming method, chemical amplification resist composition and resist film 有权图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜公开(公告)号：US08999621B2
公开(公告)日：2015-04-07
申请号：US13390847
申请日：2010-10-05
申请人： Yuichiro Enomoto , Sou Kamimura , Shinji Tarutani , Keita Kato , Kaoru Iwato
发明人： Yuichiro Enomoto , Sou Kamimura , Shinji Tarutani , Keita Kato , Kaoru Iwato
CPC分类号： G03F7/0382 , G03F7/0395 , G03F7/0397 , G03F7/2041 , G03F7/30 , G03F7/325 , G03F7/327 , Y10S430/106 , Y10S430/111
摘要： A pattern forming method includes: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains: (A) a resin substantially insoluble in alkali; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a crosslinking agent; and (D) a solvent, a negative chemical amplification resist composition used in the method, and a resist film formed from the negative chemical amplification resist composition.
摘要翻译： 图案形成方法包括：（i）从化学放大抗蚀剂组合物形成膜; （ii）使膜曝光，形成曝光膜; 和（iii）通过使用含有机溶剂的显影剂显影所述曝光的膜，其中所述化学增幅抗蚀剂组合物含有：（A）基本上不溶于碱的树脂; （B）能够在用光化射线或辐射照射时能产生酸的化合物; （C）交联剂; 和（D）本方法中使用的溶剂，负性化学增幅抗蚀剂组合物和由负极化学增幅抗蚀剂组合物形成的抗蚀剂膜。
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3.发明申请ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME 有权丙酰胺或辐射敏感性树脂组合物及其形成图案的方法公开(公告)号：US20130017377A1
公开(公告)日：2013-01-17
申请号：US13637269
申请日：2011-03-25
申请人： Shohei Kataoka , Kaoru Iwato , Sou Kamimura , Toru Tsuchihashi , Yuichiro Enomoto , Kana Fujii , Kazuyoshi Mizutani , Shinji Tarutani , Keita Kato
发明人： Shohei Kataoka , Kaoru Iwato , Sou Kamimura , Toru Tsuchihashi , Yuichiro Enomoto , Kana Fujii , Kazuyoshi Mizutani , Shinji Tarutani , Keita Kato
CPC分类号： G03F7/30 , C08F220/28 , C08F232/08 , G03F7/0045 , G03F7/0382 , G03F7/039 , G03F7/0397 , G03F7/0758 , G03F7/2041 , G03F7/325 , Y10T428/24802
摘要： Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa≧1.5 when exposed to actinic rays or radiation.
摘要翻译： 提供了一种光化射线或辐射敏感性树脂组合物和使用其形成图案的方法，确保了在曝光后延迟（PED）期间的蚀刻电阻率和稳定性优异。 该组合物含有含有重复单元的树脂，该重复单元含有当被酸作用时分解的基团，从而产生醇羟基，以及当暴露于光化射线或辐射时产生pKa≥1.5的酸的化合物。
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4.发明申请PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM 有权图案形成方法，丙烯酸敏感或辐射敏感性树脂组合物和耐腐蚀膜公开(公告)号：US20120282548A1
公开(公告)日：2012-11-08
申请号：US13521164
申请日：2011-01-07
申请人： Yuichiro Enomoto , Shinji Tarutani , Sou Kamimura , Kaoru Iwato , Keita Kato , Akinori Shibuya
发明人： Yuichiro Enomoto , Shinji Tarutani , Sou Kamimura , Kaoru Iwato , Keita Kato , Akinori Shibuya
IPC分类号： G03F7/20 , G03F7/075 , C07D211/46 , C08F226/02 , C07C271/14 , G03F7/027 , G03F7/004
CPC分类号： G03F7/325 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/0758 , G03F7/2041
摘要： Provided is a pattern forming method comprising (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (D) a solvent, and (G) a compound having at least either one of a fluorine atom and a silicon atom and having basicity or being capable of increasing the basicity by the action of an acid.
摘要翻译： 提供了一种图案形成方法，其包括（i）从光化射线敏感性或辐射敏感性树脂组合物形成膜的步骤，（ii）曝光所述膜的步骤，和（iii）使所述曝光膜显影的步骤 通过使用含有机溶剂的显影剂，其中所述光化学射线敏感性或辐射敏感性树脂组合物包含（A）能够通过酸的作用降低对含有机溶剂的显影剂的溶解度的树脂，（B） 能够在用光化学射线或辐射照射时产生酸的化合物，（D）溶剂，和（G）具有氟原子和硅原子中的至少一个并具有碱性或能够增加碱度的化合物 通过酸的作用。
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公开(公告)号：US10126653B2
公开(公告)日：2018-11-13
申请号：US13580921
申请日：2011-02-24
申请人： Kaoru Iwato , Shohei Kataoka , Shinji Tarutani , Sou Kamimura , Keita Kato , Yuichiro Enomoto , Kazuyoshi Mizutani , Toru Tsuchihashi , Kana Fujii
发明人： Kaoru Iwato , Shohei Kataoka , Shinji Tarutani , Sou Kamimura , Keita Kato , Yuichiro Enomoto , Kazuyoshi Mizutani , Toru Tsuchihashi , Kana Fujii
IPC分类号： G03F7/30 , G03F7/004 , G03F7/38 , G03F7/075 , G03F7/038 , G03F7/039 , G03F7/11 , G03F7/20 , G03F7/32
摘要： Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.
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6.发明授权Pattern forming method, pattern, chemical amplification resist composition and resist film 有权图案形成方法，图案，化学放大抗蚀剂组合物和抗蚀剂膜公开(公告)号：US08808965B2
公开(公告)日：2014-08-19
申请号：US13522147
申请日：2011-01-13
申请人： Kaoru Iwato , Shinji Tarutani , Yuichiro Enomoto , Sou Kamimura , Keita Kato
发明人： Kaoru Iwato , Shinji Tarutani , Yuichiro Enomoto , Sou Kamimura , Keita Kato
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0046 , G03F7/2041 , G03F7/325 , Y10S430/114 , Y10S430/128 , Y10T428/24802
摘要： A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains (A) a resin containing a repeating unit having two or more hydroxyl groups, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent and (D) a solvent; a pattern formed by the pattern forming method; a chemical amplification resist composition used in the pattern forming method; and a resist film formed using the chemical amplification resist composition.
摘要翻译： 一种图案形成方法，包括（i）从化学放大抗蚀剂组合物形成膜的步骤（ii）暴露所述膜的步骤，和（iii）通过使用含有机溶剂的显影剂显影所述曝光的膜的步骤， 其中，所述化学增幅抗蚀剂组合物含有（A）含有具有2个以上羟基的重复单元的树脂，（B）能够在光化射线或辐射照射时能够产生酸的化合物，（C）交联剂和（ D）溶剂; 由图案形成方法形成的图案; 在图案形成方法中使用的化学放大抗蚀剂组合物; 以及使用该化学放大抗蚀剂组合物形成的抗蚀剂膜。
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7.发明申请PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM 有权图案形成方法，图案，化学放大电阻组合物和电阻膜公开(公告)号：US20120288691A1
公开(公告)日：2012-11-15
申请号：US13522147
申请日：2011-01-13
申请人： Kaoru Iwato , Shinji Tarutani , Yuichiro Enomoto , Sou Kamimura , Keita Kato
发明人： Kaoru Iwato , Shinji Tarutani , Yuichiro Enomoto , Sou Kamimura , Keita Kato
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0046 , G03F7/2041 , G03F7/325 , Y10S430/114 , Y10S430/128 , Y10T428/24802
摘要： A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains (A) a resin containing a repeating unit having two or more hydroxyl groups, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent and (D) a solvent; a pattern formed by the pattern forming method; a chemical amplification resist composition used in the pattern forming method; and a resist film formed using the chemical amplification resist composition.
摘要翻译： 一种图案形成方法，包括（i）从化学放大抗蚀剂组合物形成膜的步骤（ii）暴露所述膜的步骤，和（iii）通过使用含有机溶剂的显影剂显影所述曝光的膜的步骤， 其中，所述化学增幅抗蚀剂组合物含有（A）含有具有2个以上羟基的重复单元的树脂，（B）能够在光化射线或辐射照射时能够产生酸的化合物，（C）交联剂和（ D）溶剂; 由图案形成方法形成的图案; 在图案形成方法中使用的化学放大抗蚀剂组合物; 以及使用该化学放大抗蚀剂组合物形成的抗蚀剂膜。
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8.发明申请PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM 有权图案形成方法，化学放大电阻组合物和电阻膜公开(公告)号：US20120148957A1
公开(公告)日：2012-06-14
申请号：US13390847
申请日：2010-10-05
申请人： Yuichiro Enomoto , Sou Kamimura , Shinji Tarutani , Keita Kato , Kaoru Iwato
发明人： Yuichiro Enomoto , Sou Kamimura , Shinji Tarutani , Keita Kato , Kaoru Iwato
CPC分类号： G03F7/0382 , G03F7/0395 , G03F7/0397 , G03F7/2041 , G03F7/30 , G03F7/325 , G03F7/327 , Y10S430/106 , Y10S430/111
摘要： A pattern forming method includes: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains: (A) a resin substantially insoluble in alkali; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a crosslinking agent; and (D) a solvent, a negative chemical amplification resist composition used in the method, and a resist film formed from the negative chemical amplification resist composition.
摘要翻译： 图案形成方法包括：（i）从化学放大抗蚀剂组合物形成膜; （ii）使膜曝光，形成曝光膜; 和（iii）通过使用含有机溶剂的显影剂显影所述曝光的膜，其中所述化学增幅抗蚀剂组合物含有：（A）基本上不溶于碱的树脂; （B）能够在用光化射线或辐射照射时能产生酸的化合物; （C）交联剂; 和（D）本方法中使用的溶剂，负性化学增幅抗蚀剂组合物和由负极化学增幅抗蚀剂组合物形成的抗蚀剂膜。
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9.发明授权公开(公告)号：US09709892B2
公开(公告)日：2017-07-18
申请号：US13637269
申请日：2011-03-25
申请人： Shohei Kataoka , Kaoru Iwato , Sou Kamimura , Toru Tsuchihashi , Yuichiro Enomoto , Kana Fujii , Kazuyoshi Mizutani , Shinji Tarutani , Keita Kato
发明人： Shohei Kataoka , Kaoru Iwato , Sou Kamimura , Toru Tsuchihashi , Yuichiro Enomoto , Kana Fujii , Kazuyoshi Mizutani , Shinji Tarutani , Keita Kato
IPC分类号： G03F7/30 , G03F7/039 , G03F7/075 , C08F220/28 , G03F7/004 , G03F7/20 , G03F7/32 , G03F7/038 , C08F232/08
CPC分类号： G03F7/30 , C08F220/28 , C08F232/08 , G03F7/0045 , G03F7/0382 , G03F7/039 , G03F7/0397 , G03F7/0758 , G03F7/2041 , G03F7/325 , Y10T428/24802
摘要： Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa≧−1.5 when exposed to actinic rays or radiation.
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公开(公告)号：US09551935B2
公开(公告)日：2017-01-24
申请号：US13636965
申请日：2011-03-25
申请人： Keita Kato , Shinji Tarutani , Toru Tsuchihashi , Sou Kamimura , Yuichiro Enomoto , Kana Fujii , Kaoru Iwato , Shohei Kataoka , Kazuyoshi Mizutani
发明人： Keita Kato , Shinji Tarutani , Toru Tsuchihashi , Sou Kamimura , Yuichiro Enomoto , Kana Fujii , Kaoru Iwato , Shohei Kataoka , Kazuyoshi Mizutani
CPC分类号： G03F7/325 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/0757 , G03F7/2041 , Y10T428/24
摘要： Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and ΔSP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent. ΔSP=SPF−SPI (1)
摘要翻译： 提供了一种形成图案的方法，确保优异的曝光宽容度（EL）和聚焦纬度（焦深DOF）。 形成图案的方法包括（A）从抗蚀剂组合物形成膜，抗蚀剂组合物，（B）将膜曝光，和（C）使用含有有机溶剂的显影剂显影曝光膜，从而形成 负面模式。 抗蚀剂组合物含有（a）在被酸作用时被分解的树脂，由下式（1）表示的＆Dgr; SP为2.5（MPa）1/2以上，（b） 被组合以在暴露于光化射线或辐射时产生酸，和（c）溶剂。 ＆Dgr; SP = SPF-SPI（1）
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