公开(公告)号：US07948024B2

公开(公告)日：2011-05-24

申请号：US12484339

申请日：2009-06-15

申请人： Suk-pil Kim ,  Yoon-dong Park ,  June-mo Koo ,  Tae-eung Yoon

发明人： Suk-pil Kim ,  Yoon-dong Park ,  June-mo Koo ,  Tae-eung Yoon

IPC分类号： H01L21/336

CPC分类号： H01L27/11556 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/11578

摘要： A nonvolatile memory device is provided that includes; a first semiconductor layer extending in a first direction, a second semiconductor layer extending in parallel with and separated from the first semiconductor layer, an isolation layer between the first semiconductor layer and second semiconductor layer, a first control gate electrode between the first semiconductor layer and the isolation layer, a second control gate electrode between the second semiconductor layer and the isolation layer, wherein the second control gate electrode and first control gate electrode are respectively disposed at opposite sides of the isolation layer, a first charge storing layer between the first control gate electrode and the first semiconductor layer, and a second charge storing layer between the second control gate electrode and the second semiconductor layer.

摘要翻译： 提供了一种非易失性存储装置，包括： 沿第一方向延伸的第一半导体层，与第一半导体层平行延伸并与第一半导体层分离的第二半导体层，在第一半导体层和第二半导体层之间的隔离层，第一半导体层与第一半导体层之间的第一半导体层， 所述隔离层，所述第二半导体层和所述隔离层之间的第二控制栅极电极，其中所述第二控制栅极电极和所述第一控制栅电极分别设置在所述隔离层的相对侧，所述第一控制栅极之间的第一电荷存储层 栅电极和第一半导体层，以及在第二控制栅电极和第二半导体层之间的第二电荷存储层。

公开(公告)号：US20100065899A1

公开(公告)日：2010-03-18

申请号：US12544631

申请日：2009-08-20

申请人： Suk-pil Kim ,  Yoon-dong Park ,  Jae-young Choi ,  June-mo Koo ,  Byung-hee Hong

发明人： Suk-pil Kim ,  Yoon-dong Park ,  Jae-young Choi ,  June-mo Koo ,  Byung-hee Hong

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L29/66833 ,  B82Y10/00 ,  G11C16/0483 ,  H01L27/11521 ,  H01L27/11568 ,  H01L27/12 ,  H01L27/1203 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/66825 ,  H01L29/7881 ,  H01L29/792

摘要： A semiconductor device may include first and second auxiliary gate electrodes and a semiconductor layer crossing the first and second auxiliary gate electrodes. A primary gate electrode may be provided on the semiconductor layer so that the semiconductor layer is between the primary gate electrode and the first and second auxiliary gate electrodes. Moreover, the first and second auxiliary gate electrodes may be configured to induce respective first and second field effect type source/drain regions in the semiconductor layer. Related methods are also discussed.

摘要翻译： 半导体器件可以包括第一和第二辅助栅极电极以及与第一和第二辅助栅电极交叉的半导体层。 主栅电极可以设置在半导体层上，使得半导体层位于主栅极和第一和第二辅助栅电极之间。 此外，第一和第二辅助栅电极可以被配置为在半导体层中诱发相应的第一和第二场效应型源极/漏极区。 还讨论了相关方法。

公开(公告)号：US08299520B2

公开(公告)日：2012-10-30

申请号：US12544631

申请日：2009-08-20

申请人： Suk-pil Kim ,  Yoon-dong Park ,  Jae-young Choi ,  June-mo Koo ,  Byung-hee Hong

发明人： Suk-pil Kim ,  Yoon-dong Park ,  Jae-young Choi ,  June-mo Koo ,  Byung-hee Hong

IPC分类号： H01L29/66 ,  H01L29/788 ,  G11C16/04

CPC分类号： H01L29/66833 ,  B82Y10/00 ,  G11C16/0483 ,  H01L27/11521 ,  H01L27/11568 ,  H01L27/12 ,  H01L27/1203 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/66825 ,  H01L29/7881 ,  H01L29/792

摘要： According to some embodiments, a semiconductor device includes first and second auxiliary gate electrodes and a semiconductor layer crossing the first and second auxiliary gate electrodes. A primary gate electrode is provided on the semiconductor layer so that the semiconductor layer is between the primary gate electrode and the first and second auxiliary gate electrodes. Moreover, the first and second auxiliary gate electrodes are configured to induce respective first and second field effect type source/drain regions in the semiconductor layer. Related methods are also discussed.

摘要翻译： 根据一些实施例，半导体器件包括第一和第二辅助栅电极以及与第一和第二辅助栅电极交叉的半导体层。 主栅电极设置在半导体层上，使得半导体层位于主栅电极和第一和第二辅助栅电极之间。 此外，第一和第二辅助栅电极被配置为在半导体层中诱发相应的第一和第二场效应源极/漏极区。 还讨论了相关方法。

公开(公告)号：US20090261314A1

公开(公告)日：2009-10-22

申请号：US12232745

申请日：2008-09-23

申请人： Suk-pil Kim ,  Yoon-dong Park ,  June-mo Koo

发明人： Suk-pil Kim ,  Yoon-dong Park ,  June-mo Koo

IPC分类号： H01L45/00

CPC分类号： H01L27/249 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/146

摘要： Provided are a non-volatile memory device that may be configured in a stacked structure and may be more easily highly integrated, and a method of fabricating the non-volatile memory device. At least one first electrode and at least one second electrode are provided. The at least one second electrode may cross the at least one first electrode. At least one data storage layer may be at an intersection between the at least one first electrode and the at least one second electrode. Any one of the at least one first electrode and the at least one second electrode may include at least one junction diode connected to the at least one data storage layer.

摘要翻译： 提供了可以被配置为堆叠结构并且可以更容易地高度集成的非易失性存储器件，以及制造非易失性存储器件的方法。 提供至少一个第一电极和至少一个第二电极。 所述至少一个第二电极可以穿过所述至少一个第一电极。 至少一个数据存储层可以在至少一个第一电极和至少一个第二电极之间的交叉点处。 所述至少一个第一电极和所述至少一个第二电极中的任何一个可以包括连接到所述至少一个数据存储层的至少一个结二极管。

公开(公告)号：US08283711B2

公开(公告)日：2012-10-09

申请号：US12149209

申请日：2008-04-29

申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  Suk-pil Kim

发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  Suk-pil Kim

IPC分类号： H01L29/792

CPC分类号： G11C5/02 ,  G11C5/025 ,  H01L27/2409 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146

摘要： Provided are a non-volatile memory device, which may have a stacked structure and may be easily integrated at increased density, and a method of fabricating and using the non-volatile memory device. The non-volatile memory device may include at least one pair of first electrode lines. At least one second electrode line may be between the at least one pair of first electrode lines. At least one data storage layer may be between the at least one pair of first electrode lines and the at least one second electrode line and may locally store a resistance change.

摘要翻译： 提供了一种非易失性存储器件，其可以具有堆叠结构并且可以容易地以增加的密度集成，以及制造和使用非易失性存储器件的方法。 非易失性存储器件可以包括至少一对第一电极线。 至少一个第二电极线可以在所述至少一对第一电极线之间。 至少一个数据存储层可以在至少一对第一电极线和至少一个第二电极线之间，并且可以局部地存储电阻变化。

公开(公告)号：US08058701B2

公开(公告)日：2011-11-15

申请号：US12216094

申请日：2008-06-30

申请人： Deok-kee Kim ,  Yoon-dong Park ,  Seung-hoon Lee ,  I-hun Song ,  Won-joo Kim ,  Young-gu Jin ,  Hyuk-soon Choi ,  Suk-pil Kim

发明人： Deok-kee Kim ,  Yoon-dong Park ,  Seung-hoon Lee ,  I-hun Song ,  Won-joo Kim ,  Young-gu Jin ,  Hyuk-soon Choi ,  Suk-pil Kim

IPC分类号： H01L23/52

CPC分类号： H01L23/5252 ,  G11C17/16 ,  H01L27/1021 ,  H01L2924/0002 ,  H01L2924/00

摘要： Antifuse structures, antifuse arrays, methods of manufacturing, and methods of operating the same are provided. An antifuse structure includes bitlines formed as first diffusing regions within a semiconductor substrate, an insulation layer formed on the bitlines, and wordlines formed on the insulation layer. An antifuse array includes a plurality of antifuse structures arranged in an array.

摘要翻译： 提供了防泡结构，反熔丝阵列，制造方法和操作方法。 反熔丝结构包括在半导体衬底内形成为第一扩散区的位线，形成在位线上的绝缘层，以及形成在绝缘层上的字线。 反熔丝阵列包括排列成阵列的多个反熔丝结构。

公开(公告)号：US08017477B2

公开(公告)日：2011-09-13

申请号：US11704205

申请日：2007-02-09

申请人： Won-joo Kim ,  Suk-pil Kim ,  Yoon-dong Park

发明人： Won-joo Kim ,  Suk-pil Kim ,  Yoon-dong Park

IPC分类号： H01L21/336

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/42332 ,  H01L29/42336 ,  H01L29/42352 ,  H01L29/66621 ,  H01L29/7881 ,  H01L29/792

摘要： A nonvolatile memory device includes a plurality of first control gate electrodes, second control gate electrodes, first storage node films, and second storage node films. The first control gate electrodes are recessed into a semiconductor substrate. Each second control gate electrode is disposed between two adjacent first control gate electrodes. The second control gate electrodes are disposed on the semiconductor substrate over the first control gate electrodes. The first storage node films are disposed between the semiconductor substrate and the first control gate electrodes. The second storage node films are disposed between the semiconductor substrate and the second control gate electrodes. A method of fabricating the nonvolatile memory device includes forming the first storage node films, forming the first control gate electrodes, forming the second storage node films, and forming the second control gate electrodes.

摘要翻译： 非易失性存储器件包括多个第一控制栅电极，第二控制栅电极，第一存储节点膜和第二存储节点膜。 第一控制栅电极凹入半导体衬底。 每个第二控制栅电极设置在两个相邻的第一控制栅电极之间。 第二控制栅电极设置在第一控制栅电极上的半导体衬底上。 第一存储节点膜设置在半导体衬底和第一控制栅电极之间。 第二存储节点膜设置在半导体衬底和第二控制栅电极之间。 一种制造非易失性存储器件的方法包括形成第一存储节点膜，形成第一控制栅电极，形成第二存储节点膜，以及形成第二控制栅电极。

公开(公告)号：US07729164B2

公开(公告)日：2010-06-01

申请号：US12010943

申请日：2008-01-31

申请人： Suk-pil Kim ,  Yoon-dong Park ,  Deok-kee Kim ,  Won-joo Kim ,  Young-gu Jin ,  Seung-hoon Lee

发明人： Suk-pil Kim ,  Yoon-dong Park ,  Deok-kee Kim ,  Won-joo Kim ,  Young-gu Jin ,  Seung-hoon Lee

IPC分类号： G11C11/34

CPC分类号： H01L27/115 ,  G11C16/0483 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/1203 ,  H01L29/42328 ,  H01L29/42336 ,  H01L29/42344 ,  H01L29/42352 ,  H01L29/66825 ,  H01L29/66833

摘要： A non-volatile memory device may include at least one semiconductor layer, a plurality of control gate electrodes, a plurality of charge storage layers, at least one first auxiliary electrode, and/or at least one second auxiliary electrode. The plurality of control gate electrodes may be recessed into the semiconductor layer. The plurality of charge storage layers may be between the plurality of control gate electrodes and the semiconductor layer. The first and second auxiliary electrodes may be arranged to face each other. The plurality of control gate electrodes may be between the first and second auxiliary electrodes and capacitively coupled with the semiconductor layer.

摘要翻译： 非易失性存储器件可以包括至少一个半导体层，多个控制栅电极，多个电荷存储层，至少一个第一辅助电极和/或至少一个第二辅助电极。 多个控制栅电极可以凹入半导体层。 多个电荷存储层可以在多个控制栅电极和半导体层之间。 第一和第二辅助电极可以被布置成彼此面对。 多个控制栅电极可以在第一和第二辅助电极之间并与半导体层电容耦合。

公开(公告)号：US20090141547A1

公开(公告)日：2009-06-04

申请号：US12149209

申请日：2008-04-29

申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  Suk-pil Kim

发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  Suk-pil Kim

IPC分类号： G11C11/00 ,  H01L21/00

CPC分类号： G11C5/02 ,  G11C5/025 ,  H01L27/2409 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146

摘要： Provided are a non-volatile memory device, which may have a stacked structure and may be easily integrated at increased density, and a method of fabricating and using the non-volatile memory device. The non-volatile memory device may include at least one pair of first electrode lines. At least one second electrode line may be between the at least one pair of first electrode lines. At least one data storage layer may be between the at least one pair of first electrode lines and the at least one second electrode line and may locally store a resistance change.

摘要翻译： 提供了一种非易失性存储器件，其可以具有堆叠结构并且可以容易地以增加的密度集成，以及制造和使用非易失性存储器件的方法。 非易失性存储器件可以包括至少一对第一电极线。 至少一个第二电极线可以在所述至少一对第一电极线之间。 至少一个数据存储层可以在至少一对第一电极线和至少一个第二电极线之间，并且可以局部地存储电阻变化。

公开(公告)号：US20080025096A1

公开(公告)日：2008-01-31

申请号：US11704205

申请日：2007-02-09

申请人： Won-joo Kim ,  Suk-Pil Kim ,  Yoon-dong Park

发明人： Won-joo Kim ,  Suk-Pil Kim ,  Yoon-dong Park

IPC分类号： G11C11/34 ,  H01L21/336

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/42332 ,  H01L29/42336 ,  H01L29/42352 ,  H01L29/66621 ,  H01L29/7881 ,  H01L29/792

摘要： A nonvolatile memory device includes a plurality of first control gate electrodes, second control gate electrodes, first storage node films, and second storage node films. The first control gate electrodes are recessed into a semiconductor substrate. Each second control gate electrode is disposed between two adjacent first control gate electrodes. The second control gate electrodes are disposed on the semiconductor substrate over the first control gate electrodes. The first storage node films are disposed between the semiconductor substrate and the first control gate electrodes. The second storage node films are disposed between the semiconductor substrate and the second control gate electrodes. A method of fabricating the nonvolatile memory device includes forming the first storage node films, forming the first control gate electrodes, forming the second storage node films, and forming the second control gate electrodes.

摘要翻译： 非易失性存储器件包括多个第一控制栅电极，第二控制栅电极，第一存储节点膜和第二存储节点膜。 第一控制栅电极凹入半导体衬底。 每个第二控制栅电极设置在两个相邻的第一控制栅极之间。 第二控制栅电极设置在第一控制栅电极上的半导体衬底上。 第一存储节点膜设置在半导体衬底和第一控制栅电极之间。 第二存储节点膜设置在半导体衬底和第二控制栅电极之间。 一种制造非易失性存储器件的方法包括形成第一存储节点膜，形成第一控制栅电极，形成第二存储节点膜，以及形成第二控制栅电极。