公开(公告)号：US08058701B2

公开(公告)日：2011-11-15

申请号：US12216094

申请日：2008-06-30

申请人： Deok-kee Kim ,  Yoon-dong Park ,  Seung-hoon Lee ,  I-hun Song ,  Won-joo Kim ,  Young-gu Jin ,  Hyuk-soon Choi ,  Suk-pil Kim

发明人： Deok-kee Kim ,  Yoon-dong Park ,  Seung-hoon Lee ,  I-hun Song ,  Won-joo Kim ,  Young-gu Jin ,  Hyuk-soon Choi ,  Suk-pil Kim

IPC分类号： H01L23/52

CPC分类号： H01L23/5252 ,  G11C17/16 ,  H01L27/1021 ,  H01L2924/0002 ,  H01L2924/00

摘要： Antifuse structures, antifuse arrays, methods of manufacturing, and methods of operating the same are provided. An antifuse structure includes bitlines formed as first diffusing regions within a semiconductor substrate, an insulation layer formed on the bitlines, and wordlines formed on the insulation layer. An antifuse array includes a plurality of antifuse structures arranged in an array.

摘要翻译： 提供了防泡结构，反熔丝阵列，制造方法和操作方法。 反熔丝结构包括在半导体衬底内形成为第一扩散区的位线，形成在位线上的绝缘层，以及形成在绝缘层上的字线。 反熔丝阵列包括排列成阵列的多个反熔丝结构。

公开(公告)号：US20090096060A1

公开(公告)日：2009-04-16

申请号：US12216094

申请日：2008-06-30

申请人： Deok-kee Kim ,  Yoon-dong Park ,  Seung-hoon Lee ,  I-hun Song ,  Won-joo Kim ,  Young-gu Jin ,  Hyuk-soon Choi ,  Suk-pil Kim

发明人： Deok-kee Kim ,  Yoon-dong Park ,  Seung-hoon Lee ,  I-hun Song ,  Won-joo Kim ,  Young-gu Jin ,  Hyuk-soon Choi ,  Suk-pil Kim

IPC分类号： H01L29/00 ,  H01L21/00

CPC分类号： H01L23/5252 ,  G11C17/16 ,  H01L27/1021 ,  H01L2924/0002 ,  H01L2924/00

摘要： Antifuse structures, antifuse arrays, methods of manufacturing, and methods of operating the same are provided. An antifuse structure includes bitlines formed as first diffusing regions within a semiconductor substrate, an insulation layer formed on the bitlines, and wordlines formed on the insulation layer. An antifuse array includes a plurality of antifuse structures arranged in an array.

摘要翻译： 提供了防泡结构，反熔丝阵列，制造方法和操作方法。 反熔丝结构包括在半导体衬底内形成为第一扩散区的位线，形成在位线上的绝缘层，以及形成在绝缘层上的字线。 反熔丝阵列包括排列成阵列的多个反熔丝结构。

公开(公告)号：US07729164B2

公开(公告)日：2010-06-01

申请号：US12010943

申请日：2008-01-31

申请人： Suk-pil Kim ,  Yoon-dong Park ,  Deok-kee Kim ,  Won-joo Kim ,  Young-gu Jin ,  Seung-hoon Lee

发明人： Suk-pil Kim ,  Yoon-dong Park ,  Deok-kee Kim ,  Won-joo Kim ,  Young-gu Jin ,  Seung-hoon Lee

IPC分类号： G11C11/34

CPC分类号： H01L27/115 ,  G11C16/0483 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/1203 ,  H01L29/42328 ,  H01L29/42336 ,  H01L29/42344 ,  H01L29/42352 ,  H01L29/66825 ,  H01L29/66833

摘要： A non-volatile memory device may include at least one semiconductor layer, a plurality of control gate electrodes, a plurality of charge storage layers, at least one first auxiliary electrode, and/or at least one second auxiliary electrode. The plurality of control gate electrodes may be recessed into the semiconductor layer. The plurality of charge storage layers may be between the plurality of control gate electrodes and the semiconductor layer. The first and second auxiliary electrodes may be arranged to face each other. The plurality of control gate electrodes may be between the first and second auxiliary electrodes and capacitively coupled with the semiconductor layer.

摘要翻译： 非易失性存储器件可以包括至少一个半导体层，多个控制栅电极，多个电荷存储层，至少一个第一辅助电极和/或至少一个第二辅助电极。 多个控制栅电极可以凹入半导体层。 多个电荷存储层可以在多个控制栅电极和半导体层之间。 第一和第二辅助电极可以被布置成彼此面对。 多个控制栅电极可以在第一和第二辅助电极之间并与半导体层电容耦合。

公开(公告)号：US20100012186A1

公开(公告)日：2010-01-21

申请号：US12436832

申请日：2009-05-07

申请人： Yoon-dong Park ,  Kwang-soo Seol ,  Deok-kee Kim ,  Won-joo Kim ,  Young-gu Jin ,  Seung-hoon Lee ,  Suk-pil Kim

发明人： Yoon-dong Park ,  Kwang-soo Seol ,  Deok-kee Kim ,  Won-joo Kim ,  Young-gu Jin ,  Seung-hoon Lee ,  Suk-pil Kim

IPC分类号： H01L31/00

CPC分类号： H01L35/32 ,  H01L31/0547 ,  H02S10/10 ,  Y02E10/52

摘要： Provided is a bulb-type light concentrated solar cell module that includes a reflective mirror unit that is concavely formed to convergingly reflect sunlight and has a first hole on a bottom thereof; a solar cell that generates electrical energy in response to light received from the reflective mirror unit; a socket that blocks the first hole at a lower part of the reflective mirror unit and is fixed on the reflective mirror unit; and a power control unit that is electrically connected to the solar cell to generate electricity in the socket.

摘要翻译： 本发明提供一种灯泡型光集中太阳能电池模块，其包括反射镜单元，该反射镜单元凹入地形成以会聚地反射太阳光，并且在其底部具有第一孔; 太阳能电池，其响应于从所述反射镜单元接收的光产生电能; 插座，其阻挡反射镜单元的下部的第一孔并固定在反射镜单元上; 以及电连接到太阳能电池以在插座中发电的电力控制单元。

公开(公告)号：US20090097321A1

公开(公告)日：2009-04-16

申请号：US12010943

申请日：2008-01-31

申请人： Suk-pil Kim ,  Yoon-dong Park ,  Deok-kee Kim ,  Won-joo Kim ,  Young-gu Jin ,  Seung-hoon Lee

发明人： Suk-pil Kim ,  Yoon-dong Park ,  Deok-kee Kim ,  Won-joo Kim ,  Young-gu Jin ,  Seung-hoon Lee

IPC分类号： G11C16/06 ,  H01L29/788 ,  H01L21/336

CPC分类号： H01L27/115 ,  G11C16/0483 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/1203 ,  H01L29/42328 ,  H01L29/42336 ,  H01L29/42344 ,  H01L29/42352 ,  H01L29/66825 ,  H01L29/66833

摘要： A non-volatile memory device may include at least one semiconductor layer, a plurality of control gate electrodes, a plurality of charge storage layers, at least one first auxiliary electrode, and/or at least one second auxiliary electrode. The plurality of control gate electrodes may be recessed into the semiconductor layer. The plurality of charge storage layers may be between the plurality of control gate electrodes and the semiconductor layer. The first and second auxiliary electrodes may be arranged to face each other. The plurality of control gate electrodes may be between the first and second auxiliary electrodes and capacitively coupled with the semiconductor layer.

摘要翻译： 非易失性存储器件可以包括至少一个半导体层，多个控制栅电极，多个电荷存储层，至少一个第一辅助电极和/或至少一个第二辅助电极。 多个控制栅电极可以凹入半导体层。 多个电荷存储层可以在多个控制栅电极和半导体层之间。 第一和第二辅助电极可以被布置成彼此面对。 多个控制栅电极可以在第一和第二辅助电极之间并与半导体层电容耦合。

公开(公告)号：US08283711B2

公开(公告)日：2012-10-09

申请号：US12149209

申请日：2008-04-29

申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  Suk-pil Kim

发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  Suk-pil Kim

IPC分类号： H01L29/792

CPC分类号： G11C5/02 ,  G11C5/025 ,  H01L27/2409 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146

摘要： Provided are a non-volatile memory device, which may have a stacked structure and may be easily integrated at increased density, and a method of fabricating and using the non-volatile memory device. The non-volatile memory device may include at least one pair of first electrode lines. At least one second electrode line may be between the at least one pair of first electrode lines. At least one data storage layer may be between the at least one pair of first electrode lines and the at least one second electrode line and may locally store a resistance change.

摘要翻译： 提供了一种非易失性存储器件，其可以具有堆叠结构并且可以容易地以增加的密度集成，以及制造和使用非易失性存储器件的方法。 非易失性存储器件可以包括至少一对第一电极线。 至少一个第二电极线可以在所述至少一对第一电极线之间。 至少一个数据存储层可以在至少一对第一电极线和至少一个第二电极线之间，并且可以局部地存储电阻变化。

公开(公告)号：US20090141547A1

公开(公告)日：2009-06-04

申请号：US12149209

申请日：2008-04-29

申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  Suk-pil Kim

发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  Suk-pil Kim

IPC分类号： G11C11/00 ,  H01L21/00

CPC分类号： G11C5/02 ,  G11C5/025 ,  H01L27/2409 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146

摘要： Provided are a non-volatile memory device, which may have a stacked structure and may be easily integrated at increased density, and a method of fabricating and using the non-volatile memory device. The non-volatile memory device may include at least one pair of first electrode lines. At least one second electrode line may be between the at least one pair of first electrode lines. At least one data storage layer may be between the at least one pair of first electrode lines and the at least one second electrode line and may locally store a resistance change.

摘要翻译： 提供了一种非易失性存储器件，其可以具有堆叠结构并且可以容易地以增加的密度集成，以及制造和使用非易失性存储器件的方法。 非易失性存储器件可以包括至少一对第一电极线。 至少一个第二电极线可以在所述至少一对第一电极线之间。 至少一个数据存储层可以在至少一对第一电极线和至少一个第二电极线之间，并且可以局部地存储电阻变化。

公开(公告)号：US20090184360A1

公开(公告)日：2009-07-23

申请号：US12285403

申请日：2008-10-03

申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Suk-pil Kim ,  Seung-hoon Lee

发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Suk-pil Kim ,  Seung-hoon Lee

IPC分类号： H01L29/788 ,  H01L29/792 ,  H01L21/336

CPC分类号： H01L21/28282 ,  H01L21/28273 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

摘要： Provided are a non-volatile memory device that may expand to a stacked structure and may be more easily highly integrated and an economical method of fabricating the non-volatile memory device. The non-volatile memory device may include at least one semiconductor column. At least one first control gate electrode may be arranged on a first side of the at least one semiconductor column. At least one second control gate electrode may be arranged on a second side of the at least one semiconductor column. A first charge storage layer may be between the at least one first control gate electrode and the at least one semiconductor column. A second charge storage layer may be between the at least one second control gate electrode and the at least one semiconductor column.

摘要翻译： 提供了可以扩展到堆叠结构并且可以更容易地高度集成的非易失性存储器件，以及制造非易失性存储器件的经济方法。 非易失性存储器件可以包括至少一个半导体柱。 至少一个第一控制栅电极可以布置在至少一个半导体柱的第一侧上。 至少一个第二控制栅电极可以布置在至少一个半导体柱的第二侧上。 第一电荷存储层可以在至少一个第一控制栅电极和至少一个半导体柱之间。 第二电荷存储层可以在至少一个第二控制栅极电极和至少一个半导体柱之间。

公开(公告)号：US20090109761A1

公开(公告)日：2009-04-30

申请号：US12076310

申请日：2008-03-17

申请人： Young-gu Jin ,  Won-joo Kim ,  Suk-pil Kim ,  Yoon-dong Park ,  Seung-hoon Lee

发明人： Young-gu Jin ,  Won-joo Kim ,  Suk-pil Kim ,  Yoon-dong Park ,  Seung-hoon Lee

IPC分类号： G11C16/20

CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C16/10

摘要： Provided is a method of operating a three-dimensional nonvolatile memory device which may increase the reliability and efficiency of the three-dimensional nonvolatile memory device. The method of operating a nonvolatile memory device may include: resetting the nonvolatile memory device by injecting charges into charge storage layers of a plurality of memory cells of a block; and setting the nonvolatile memory device by removing at least some of the charges injected into the charge storage layers of one or more memory cells selected from among the plurality of memory cells.

摘要翻译： 提供了一种操作三维非易失性存储器件的方法，其可以增加三维非易失性存储器件的可靠性和效率。 操作非易失性存储器件的方法可以包括：通过向块的多个存储单元的电荷存储层注入电荷来复位非易失性存储器件; 以及通过去除从多个存储单元中选择的一个或多个存储单元的电荷存储层中注入的电荷中的至少一些电荷来设置非易失性存储器件。

公开(公告)号：US07863672B2

公开(公告)日：2011-01-04

申请号：US12285403

申请日：2008-10-03

申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Suk-pil Kim ,  Seung-hoon Lee

发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Suk-pil Kim ,  Seung-hoon Lee

IPC分类号： H01L29/788 ,  H01L29/792 ,  H01L21/336

CPC分类号： H01L21/28282 ,  H01L21/28273 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

摘要： Provided are a non-volatile memory device that may expand to a stacked structure and may be more easily highly integrated and an economical method of fabricating the non-volatile memory device. The non-volatile memory device may include at least one semiconductor column. At least one first control gate electrode may be arranged on a first side of the at least one semiconductor column. At least one second control gate electrode may be arranged on a second side of the at least one semiconductor column. A first charge storage layer may be between the at least one first control gate electrode and the at least one semiconductor column. A second charge storage layer may be between the at least one second control gate electrode and the at least one semiconductor column.

摘要翻译： 提供了可以扩展到堆叠结构并且可以更容易地高度集成的非易失性存储器件，以及制造非易失性存储器件的经济方法。 非易失性存储器件可以包括至少一个半导体柱。 至少一个第一控制栅电极可以布置在至少一个半导体柱的第一侧上。 至少一个第二控制栅电极可以布置在至少一个半导体柱的第二侧上。 第一电荷存储层可以在至少一个第一控制栅电极和至少一个半导体柱之间。 第二电荷存储层可以在至少一个第二控制栅极电极和至少一个半导体柱之间。